AMD AM29F200BB-90DTC1 2 megabit (256 k x 8-bit/128 k x 16-bit) cmos 5.0 volt-only, sectored flash memory-die revision 1 Datasheet

Am29F200B
Known Good Die
Data Sheet
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SUPPLEMENT
Am29F200B Known Good Die
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)
CMOS 5.0 Volt-only, Sectored Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
■ 5.0 V ± 10% for read and write operations
— Minimizes system level power requirements
■ Manufactured on 0.32 µm process technology
— Compatible with 0.5 µm Am29F200A device
■ High performance
— 70, 90, or 120 ns access time
■ Low power consumption
— 20 mA typical active read current (byte mode)
■ Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■ Minimum 1,000,000 write/erase cycles
guaranteed
■ Compatible with JEDEC standards
— 28 mA typical active read current for
(word mode)
— Pinout and software compatible with
single-power-supply flash
— 30 mA typical program/erase current
— Superior inadvertent write protection
— 1 µA typical standby current
■ Sector erase architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
three 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
three 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to prevent
any program or erase operations within that
sector
■ Data# Polling and Toggle Bit
— Detects program or erase cycle completion
■ Ready/Busy# output (RY/BY#)
— Hardware method for detection of program or
erase cycle completion
■ Erase Suspend/Resume
— Supports reading data from a sector not being
erased
■ Hardware RESET# pin
— Resets internal state machine to the reading
array data
Sectors can be locked via programming
equipment
■ 20-year data retention at 125°C
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■ Tested to datasheet specifications at
temperature
■ Top or bottom boot block configurations
available
— Contact AMD for higher temperature range
devices
■ Quality and reliability levels equivalent to
standard packaged components
■ Shipped in waffle pack, surftape, and unsawn
wafer
■ 500 µm die/wafer thickness
Publication# 21257 Rev: D Amendment/+4
Issue Date: June 27, 2001
S U P P L E M E N T
GENERAL DESCRIPTION
The Am29F200B in Known Good Die (KGD) form is a
2 Mbit, 5.0 Volt-only Flash memory. AMD defines KGD
as standard product in die form, tested for functionality
and speed. AMD KGD products have the same reliability and quality as AMD products in packaged form.
Am29F200B Features
grammed) before executing the erase operation. During erase, the device automatically times the erase
pulse widths and verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6/
DQ2 (toggle) status bits. After a program or erase
cycle has been completed, the device is ready to read
array data or accept another command.
The Am29F200B is organized as 262,144 bytes of 8
bits each or 131,072 words of 16 bits each. The 8-bit
data appears on DQ0-DQ7; the 16-bit data appears on
DQ0-DQ15. This device is designed to be programmed
in-system with the standard system 5.0 Volt V CC
supply. A 12.0 volt VPP is not required for program or
erase operations.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
The standard Am29F200B in KGD form offers an
access time of 70, 90, or 120 ns, allowing high-speed
microprocessors to operate without wait states. To
eliminate bus contention the device has separate chip
enable (CE#), write enable (WE#), and output enable
(OE#) controls.
Hardware data protection measures include a low
VCC detector that automatically inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of memory. This can be achieved via programming equipment.
The device requires only a single 5.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the
program and erase operations.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents
serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the
programming and erase operations. Reading data out
of the device is similar to reading from other Flash or
EPROM devices.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies
proper cell margin.
Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already pro-
The system can place the device into the standby mode.
Power consumption is greatly reduced in this mode.
AMD’s Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device
electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The data is
programmed using hot electron injection.
Electrical Specifications
Refer to the Am29F200B data sheet, publication number
21526, for full electrical specifications on the Am29F200B.
PRODUCT SELECTOR GUIDE
Family Part Number
Speed Option (VCC = 5.0 V ± 10%)
Am29F200B KGD
-75 (VCC = 5.0 V ± 5%)
-90
-120
Max access time, ns (tACC)
70
90
120
Max CE# access time, ns (tCE)
70
90
120
Max OE# access time, ns (tOE)
30
35
50
2
Am29F200B Known Good Die
S U P P L E M E N T
DIE PHOTOGRAPH
DIE PAD LOCATIONS
9 8 7 6 5 4 3 2 1 42 41 40 39 38 37 36 35 34
33
10
11
32
12
31
AMD logo location
1314 15 16 17 18 1920 21 22
23
24 25 2627 28 29 30
Am29F200B Known Good Die
3
S U P P L E M E N T
PAD DESCRIPTION
Pad
Signal
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
VCC
DQ4
DQ12
DQ5
DQ13
DQ6
DQ14
DQ7
DQ15/A-1
VSS
BYTE#
A16
A15
A14
A13
A12
A11
A10
A9
A8
WE#
RESET#
RY/BY#
A7
A6
A5
A4
A3
A2
A1
A0
CE#
VSS
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
Pad Center (mils)
X
Y
0.00
0.00
–6.80
0.00
–12.80
0.00
–18.60
0.00
–24.50
0.00
–30.30
0.00
–36.30
0.00
–42.10
0.00
–48.00
0.00
–55.70
1.40
–57.50
–6.50
–57.50
–18.00
–57.10
–124.90
–51.30
–124.90
–45.90
–124.90
–40.00
–124.90
–34.60
–124.90
–28.80
–124.90
–23.30
–124.60
–17.40
–124.90
–12.00
–124.90
–2.40
–128.60
9.50
–128.60
30.30
–124.90
35.80
–124.90
41.60
–124.90
47.00
–124.90
52.90
–124.90
58.30
–124.90
64.10
–124.90
64.50
–18.00
64.50
–6.50
64.50
3.80
55.00
2.30
47.40
0.00
41.50
0.00
35.60
0.00
29.70
0.00
23.90
0.00
18.00
0.00
12.10
0.00
6.20
0.00
Pad Center (millimeters)
X
Y
0.0000
0.0000
–0.1727
0.0000
–0.3251
0.0000
–0.4724
0.0000
–0.6223
0.0000
–0.7696
0.0000
–0.9220
0.0000
–1.0693
0.0000
–1.2192
0.0000
–1.4148
0.0356
–1.4605
–0.1651
–1.4605
–0.4572
–1.4503
–3.1725
–1.3030
–3.1725
–1.1659
–3.1725
–1.0160
–3.1725
–0.8788
–3.1725
–0.7315
–3.1725
–0.5918
–3.1648
–0.4420
–3.1725
–0.3048
–3.1725
–0.0610
–3.2664
0.2413
–3.2664
0.7696
–3.1725
0.9093
–3.1725
1.0566
–3.1725
1.1938
–3.1725
1.3437
–3.1725
1.4808
–3.1725
1.6281
–3.1725
1.6383
–0.4572
1.6383
–0.1651
1.6383
0.0965
1.3970
0.0584
1.2040
0.0000
1.0541
0.0000
0.9042
0.0000
0.7544
0.0000
0.6071
0.0000
0.4572
0.0000
0.3073
0.0000
0.1575
0.0000
Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.
4
Am29F200B Known Good Die
S U P P L E M E N T
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is
formed by a combination of the following:
Am29F200B
T
-75
DP
C
1
DIE REVISION
This number refers to the specific AMD manufacturing process and
product technology reflected in this document. It is entered in the
revision field of AMD standard product nomenclature.
TEMPERATURE RANGE
C
= Commercial (0°C to +70°C)
I
= Industrial (–40°C to +85°C)
E
= Extended (–55°C to +125°C)
Contact AMD for higher temperature range devices.
PACKAGE TYPE AND
MINIMUM ORDER QUANTITY
DP
= Waffle Pack
245 die per 5 tray stack
DG
= Gel-Pak® Die Tray
486 die per 6 tray stack
DT
= Surftape™ (Tape and Reel)
2500 per 7-inch reel
DW = Gel-Pak® Wafer Tray (sawn wafer on frame)
Call AMD sales office for minimum order quantity
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T
=
Top sector
B
=
Bottom sector
DEVICE NUMBER/DESCRIPTION
Am29F200B Known Good Die
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS Flash Memory—Die Revision 1
5.0 Volt-only Program and Erase
Valid Combinations
AM29F200BT-75,
AM29F200BB-75
(70 ns, VCC = 5.0 V ±5%)
AM29F200BT-90,
AM29F200BB-90
DPC 1, DPI 1, DPE 1,
DGC 1, DGI 1, DGE 1,
DTC 1, DTI 1, DTE 1,
DWC 1, DWI 1, DWE 1
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
AM29F200BT-120,
AM29F200BB-120
Am29F200B Known Good Die
5
S U P P L E M E N T
PACKAGING INFORMATION
Surftape Packaging
AMD logo location
Direction of Feed
12 mm
Orientation relative to
leading edge of tape
and reel
Gel-Pak and Waffle Pack Packaging
Orientation relative to
top left corner of
Gel-Pak
and Waffle Pack
cavity plate
AMD logo location
6
Am29F200B Known Good Die
S U P P L E M E N T
PRODUCT TEST FLOW
Figure 1 provides an overview of AMD’s Known Good
Die test flow. For more detailed information, refer to the
Am29F200B product qualification database supplement for KGD. AMD implements quality assurance procedures throughout the product test flow. In addition,
Wafer Sort 1
Bake
24 hours at 250°C
Wafer Sort 2
Wafer Sort 3
Hot Temperature
Packaging for Shipment
an off-line quality monitoring program (QMP) further
guarantees AMD quality standards are met on Known
Good Die products. These QA procedures also allow
AMD to produce KGD products without requiring or
implementing burn-in.
DC Parameters
Functionality
Programmability
Erasability
Data Retention
DC Parameters
Functionality
Programmability
Erasability
DC Parameters
Functionality
Programmability
Erasability
Speed
Incoming Inspection
Wafer Saw
Die Separation
100% Visual Inspection
Die Pack
Shipment
Figure 1.
AMD KGD Product Test Flow
Am29F200B Known Good Die
7
S U P P L E M E N T
PHYSICAL SPECIFICATIONS
MANUFACTURING INFORMATION
Die dimensions . . . . . . . . . . . . . . 135 mils x 150 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . . 3.43 mm x 3.81 mm
Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . FASL
Die Thickness . . . . . . . . . . . . . . . . . . . . . . . 19.7 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .500 µm
Bond Pad Size . . . . . . . . . . . . . . 4.69 mils x 4.69 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . 115.9 µm x 115.9 µm
Pad Area Free of Passivation . . . . . . . . . .13.99 mils2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9,025 µm2
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42
Test . . . . . . . . . . . . . . . . . . . . . . Sunnyvale, CA, USA,
. . . . . . . . . . . . . . . . . . . . . . . . and Penang, Malaysia
Manufacturing ID (Top Boot) . . . . . . . . . . . . 98480AK
(Bottom Boot) . . . . . . . .98480ABK
Preparation for Shipment . . . . . . . . Penang, Malaysia
Fabrication Process . . . . . . . . . . . . . . . . . . . . CS39S
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Bond Pad Metalization . . . . . . . . . . . . . . . . . . . . Al/Cu
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
may be grounded (optional)
SPECIAL HANDLING INSTRUCTIONS
Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250°C.
Failure to adhere to these handling instructions will
result in irreparable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30% to 60% relative humidity.
DC OPERATING CONDITIONS
VCC (Supply Voltage) . . . . . . . . . . . . . . . 4.5 V to 5.5 V
Junction Temperature Under Bias:
Commercial, Industrial, and
Extended Temperature Range . . . . .TJ (max) = 130°C
Operating Temperature
Commercial . . . . . . . . . . . . . . . . . . . 0°C to +70°C
Industrial . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Extended . . . . . . . . . . . . . . . . . . –55°C to +125°C
Processing
Storage
Store at a maximum temperature of 30°C in a nitrogenpurged cabinet or vacuum-sealed bag. Observe all
standard ESD handling procedures.
Contact AMD for higher temperature range devices.
8
Am29F200B Known Good Die
S U P P L E M E N T
TERMS AND CONDITIONS OF SALE FOR
AMD NON-VOLATILE MEMORY DIE
All transactions relating to unpackaged die or unpackaged wafer(s) under this agreement shall be subject to
AMD’s standard terms and conditions of sale, or any
revisions thereof, which revisions AMD reserves the
right to make at any time and from time to time. In the
event of conflict between the provisions of AMD’s standard terms and conditions of sale and this agreement,
the terms of this agreement shall be controlling.
AMD warrants unpackaged die or unpackaged
wafer(s) of its manufacture (“Known Good Die,” “Die,”
or Wafer(s)) against defective materials or workmanship for a period of one (1) year from date of shipment.
This warranty does not extend beyond the first purchaser of said Die or Wafer(s). Buyer assumes full
responsibility to ensure compliance with the appropriate handling, assembly and processing of Known
Good Die or Wafer(s) (including but not limited to
proper Die preparation, Die attach, backgrinding, wire
bonding and related assembly and test activities), and
compliance with all guidelines set forth in AMD’s specifications for Known Good Die or Wafer(s), and AMD
assumes no responsibility for environmental effects on
Known Good Die or Wafer(s) or for any activity of Buyer
or a third party that damages the Die or Wafer(s) due to
improper use, abuse, negligence, improper installation,
improper backgrinding, accident, loss, damage in
transit, or unauthorized repair or alteration by a person
or entity other than AMD (“Warranty Exclusions”).
The liability of AMD under this warranty is limited, at
AMD's option, solely to repair the Die or Wafer(s), to
send replacement Die or Wafer(s), or to make an
appropriate credit adjustment or refund in an amount
not to exceed the original purchase price actually paid
for the Die or Wafer(s) returned to AMD, provided that:
(a) AMD is promptly notified by Buyer in writing during
the applicable warranty period of any defect or nonconformity in the Known Good Die or Wafer(s); (b) Buyer
obtains authorization from AMD to return the defective
Die or Wafer(s); (c) the defective Die or Wafer(s) is
returned to AMD by Buyer in accordance with AMD’s
shipping instructions set forth below; and (d) Buyer
shows to AMD’s satisfaction that such alleged defect or
nonconformity actually exists and was not caused by
any of the above-referenced Warranty Exclusions.
Buyer shall ship such defective Die or Wafer(s) to AMD
via AMD’s carrier, collect. Risk of loss will transfer to
AMD when the defective Die or Wafer(s) is provided to
AMD’s carrier. If Buyer fails to adhere to these warranty
returns guidelines, Buyer shall assume all risk of loss
and shall pay for all freight to AMD's specified location.
The aforementioned provisions do not extend the original warranty period of any Known Good Die or
Wafer(s) that has either been repaired or replaced by
AMD.
THIS WARRANTY IS EXPRESSED IN LIEU OF ALL
OTHER WARRANTIES, EXPRESSED OR IMPLIED,
INCLUDING THE IMPLIED WARRANTY OF FITNESS
FOR A PARTICULAR PURPOSE, THE IMPLIED
WARRANTY OF MERCHANTABILITY AND OF ALL
OTHER OBLIGATIONS OR LIABILITIES ON AMD's
PART, AND IT NEITHER ASSUMES NOR AUTHORIZES ANY OTHER PERSON TO ASSUME FOR
AMD ANY OTHER LIABILITIES. THE FOREGOING
CONSTITUTES THE BUYER'S SOLE AND EXCLUSIVE REMEDY FOR THE FURNISHING OF DEFECTIVE OR NON CONFORMING KNOWN GOOD
DIEOR WAFER(S) AND AMD SHALL NOT IN ANY
EVENT BE LIABLE FOR INCREASED MANUFACTURING COSTS, DOWNTIME COSTS, DAMAGES
RELATING TO BUYER’S PROCUREMENT OF SUBSTITUTE DIE OR WAFER(S) (i.e., “COST OF
COVER”), LOSS OF PROFITS, REVENUES OR
GOODWILL, LOSS OF USE OF OR DAMAGE TO
ANY ASSOCIATED EQUIPMENT, OR ANY OTHER
INDIRECT, INCIDENTAL, SPECIAL OR CONSEQUENTIAL DAMAGES BY REASON OF THE FACT
THAT SUCH KNOWN GOOD DIE OR WAFER(S)
SHALL HAVE BEEN DETERMINED TO BE DEFECTIVE OR NON CONFORMING.
Buyer agrees that it will make no warranty representations to its customers which exceed those given by
AMD to Buyer unless and until Buyer shall agree to
indemnify AMD in writing for any claims which exceed
AMD's warranty.
Am29F200B Known Good Die
9
S U P P L E M E N T
REVISION SUMMARY
Revision A (1997)
Packaging Information
Added section. Moved orientation information from die
photograph section into this section.
Initial release.
Revision B (December 1997)
Revision D+1 (June 14, 1999)
Formatted for 1998 flash data book.
Physical Specifications
Revision C (November 1998)
Global
Corrected bond pad dimensions and deleted Si from
the bond pad metalization specification.
Formatted to match current template. Modified
Am29F200A data sheet for CS39S process technology.
Revision D+2 (July 12, 1999)
Global
Terms and Conditions
Revision D (December 1998)
The device is now available in the high temperature
range (–55°C to +140°C). TJ (max) for this range is
+145°C.
Global
Revision D+3 (November 17, 1999)
Added -75 speed option.
Global
Ordering Information
Replaced references to high temperature ratings with a
note to contact AMD for such devices.
Replaced warranty with new version.
Changed Gel-Pak quantity to 486. Corrected Surftape
reel size to 7 inches.
Revision D+4 (June 27, 2001)
Manufacturing Information
Added Penang, Malaysia as a test facility (ACN2016).
Trademarks
Copyright © 2001 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
10
Am29F200B Known Good Die
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