Am29F200B Known Good Die Data Sheet -XO\ 7KHIROORZLQJGRFXPHQWVSHFLILHV6SDQVLRQPHPRU\SURGXFWVWKDWDUHQRZRIIHUHGE\ERWK$GYDQFHG 0LFUR'HYLFHVDQG)XMLWVX$OWKRXJKWKHGRFXPHQWLVPDUNHGZLWKWKHQDPHRIWKHFRPSDQ\WKDWRULJ LQDOO\ GHYHORSHG WKHVSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EHRIIHUHG WR FXVWRPHUVRIERWK $0' DQG )XMLWVX Continuity of Specifications 7KHUHLVQRFKDQJHWRWKLVGDWDVKHHWDVDUHVXOWRIRIIHULQJWKHGHYLFHDVD6SDQVLRQSURGXFW$Q\ FKDQJHVWKDWKDYHEHHQPDGHDUHWKHUHVXOWRIQRUPDOGDWDVKHHWLPSURYHPHQWDQGDUHQRWHGLQWKH GRFXPHQWUHYLVLRQVXPPDU\ZKHUHVXSSRUWHG)XWXUHURXWLQHUHYLVLRQVZLOORFFXUZKHQDSSURSULDWH DQGFKDQJHVZLOOEHQRWHGLQDUHYLVLRQVXPPDU\ Continuity of Ordering Part Numbers $0'DQG)XMLWVXFRQWLQXHWRVXSSRUWH[LVWLQJSDUWQXPEHUVEHJLQQLQJZLWK$PDQG0%07RRUGHU WKHVHSURGXFWVSOHDVHXVHRQO\WKH2UGHULQJ3DUW1XPEHUVOLVWHGLQWKLVGRFXPHQW For More Information 3OHDVH FRQWDFW \RXU ORFDO $0' RU )XMLWVX VDOHV RIILFH IRU DGGLWLRQDO LQIRUPDWLRQ DERXW 6SDQVLRQ PHPRU\VROXWLRQV 3XEOLFDWLRQ1XPEHU 5HYLVLRQ ' $PHQGPHQW ,VVXH'DWH -XQH SUPPLEMENT Am29F200B Known Good Die 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS ■ 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F200A device ■ High performance — 70, 90, or 120 ns access time ■ Low power consumption — 20 mA typical active read current (byte mode) ■ Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors — Embedded Program algorithm automatically writes and verifies data at specified addresses ■ Minimum 1,000,000 write/erase cycles guaranteed ■ Compatible with JEDEC standards — 28 mA typical active read current for (word mode) — Pinout and software compatible with single-power-supply flash — 30 mA typical program/erase current — Superior inadvertent write protection — 1 µA typical standby current ■ Sector erase architecture — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and three 64 Kbyte sectors (byte mode) — One 8 Kword, two 4 Kword, one 16 Kword, and three 32 Kword sectors (word mode) — Supports full chip erase — Sector Protection features: A hardware method of locking a sector to prevent any program or erase operations within that sector ■ Data# Polling and Toggle Bit — Detects program or erase cycle completion ■ Ready/Busy# output (RY/BY#) — Hardware method for detection of program or erase cycle completion ■ Erase Suspend/Resume — Supports reading data from a sector not being erased ■ Hardware RESET# pin — Resets internal state machine to the reading array data Sectors can be locked via programming equipment ■ 20-year data retention at 125°C Temporary Sector Unprotect feature allows code changes in previously locked sectors ■ Tested to datasheet specifications at temperature ■ Top or bottom boot block configurations available — Contact AMD for higher temperature range devices ■ Quality and reliability levels equivalent to standard packaged components ■ Shipped in waffle pack, surftape, and unsawn wafer ■ 500 µm die/wafer thickness Publication# 21257 Rev: D Amendment/+4 Issue Date: June 27, 2001 S U P P L E M E N T GENERAL DESCRIPTION The Am29F200B in Known Good Die (KGD) form is a 2 Mbit, 5.0 Volt-only Flash memory. AMD defines KGD as standard product in die form, tested for functionality and speed. AMD KGD products have the same reliability and quality as AMD products in packaged form. Am29F200B Features grammed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7 (Data# Polling) and DQ6/ DQ2 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command. The Am29F200B is organized as 262,144 bytes of 8 bits each or 131,072 words of 16 bits each. The 8-bit data appears on DQ0-DQ7; the 16-bit data appears on DQ0-DQ15. This device is designed to be programmed in-system with the standard system 5.0 Volt V CC supply. A 12.0 volt VPP is not required for program or erase operations. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. The standard Am29F200B in KGD form offers an access time of 70, 90, or 120 ns, allowing high-speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#), and output enable (OE#) controls. Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. This can be achieved via programming equipment. The device requires only a single 5.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The Erase Suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. The hardware RESET# pin terminates any operation in progress and resets the internal state machine to reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the Flash memory. Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm—an internal algorithm that automatically preprograms the array (if it is not already pro- The system can place the device into the standby mode. Power consumption is greatly reduced in this mode. AMD’s Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron injection. Electrical Specifications Refer to the Am29F200B data sheet, publication number 21526, for full electrical specifications on the Am29F200B. PRODUCT SELECTOR GUIDE Family Part Number Speed Option (VCC = 5.0 V ± 10%) Am29F200B KGD -75 (VCC = 5.0 V ± 5%) -90 -120 Max access time, ns (tACC) 70 90 120 Max CE# access time, ns (tCE) 70 90 120 Max OE# access time, ns (tOE) 30 35 50 2 Am29F200B Known Good Die S U P P L E M E N T DIE PHOTOGRAPH DIE PAD LOCATIONS 9 8 7 6 5 4 3 2 1 42 41 40 39 38 37 36 35 34 33 10 11 32 12 31 AMD logo location 1314 15 16 17 18 1920 21 22 23 24 25 2627 28 29 30 Am29F200B Known Good Die 3 S U P P L E M E N T PAD DESCRIPTION Pad Signal 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 VCC DQ4 DQ12 DQ5 DQ13 DQ6 DQ14 DQ7 DQ15/A-1 VSS BYTE# A16 A15 A14 A13 A12 A11 A10 A9 A8 WE# RESET# RY/BY# A7 A6 A5 A4 A3 A2 A1 A0 CE# VSS OE# DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 Pad Center (mils) X Y 0.00 0.00 –6.80 0.00 –12.80 0.00 –18.60 0.00 –24.50 0.00 –30.30 0.00 –36.30 0.00 –42.10 0.00 –48.00 0.00 –55.70 1.40 –57.50 –6.50 –57.50 –18.00 –57.10 –124.90 –51.30 –124.90 –45.90 –124.90 –40.00 –124.90 –34.60 –124.90 –28.80 –124.90 –23.30 –124.60 –17.40 –124.90 –12.00 –124.90 –2.40 –128.60 9.50 –128.60 30.30 –124.90 35.80 –124.90 41.60 –124.90 47.00 –124.90 52.90 –124.90 58.30 –124.90 64.10 –124.90 64.50 –18.00 64.50 –6.50 64.50 3.80 55.00 2.30 47.40 0.00 41.50 0.00 35.60 0.00 29.70 0.00 23.90 0.00 18.00 0.00 12.10 0.00 6.20 0.00 Pad Center (millimeters) X Y 0.0000 0.0000 –0.1727 0.0000 –0.3251 0.0000 –0.4724 0.0000 –0.6223 0.0000 –0.7696 0.0000 –0.9220 0.0000 –1.0693 0.0000 –1.2192 0.0000 –1.4148 0.0356 –1.4605 –0.1651 –1.4605 –0.4572 –1.4503 –3.1725 –1.3030 –3.1725 –1.1659 –3.1725 –1.0160 –3.1725 –0.8788 –3.1725 –0.7315 –3.1725 –0.5918 –3.1648 –0.4420 –3.1725 –0.3048 –3.1725 –0.0610 –3.2664 0.2413 –3.2664 0.7696 –3.1725 0.9093 –3.1725 1.0566 –3.1725 1.1938 –3.1725 1.3437 –3.1725 1.4808 –3.1725 1.6281 –3.1725 1.6383 –0.4572 1.6383 –0.1651 1.6383 0.0965 1.3970 0.0584 1.2040 0.0000 1.0541 0.0000 0.9042 0.0000 0.7544 0.0000 0.6071 0.0000 0.4572 0.0000 0.3073 0.0000 0.1575 0.0000 Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment. 4 Am29F200B Known Good Die S U P P L E M E N T ORDERING INFORMATION Standard Products AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: Am29F200B T -75 DP C 1 DIE REVISION This number refers to the specific AMD manufacturing process and product technology reflected in this document. It is entered in the revision field of AMD standard product nomenclature. TEMPERATURE RANGE C = Commercial (0°C to +70°C) I = Industrial (–40°C to +85°C) E = Extended (–55°C to +125°C) Contact AMD for higher temperature range devices. PACKAGE TYPE AND MINIMUM ORDER QUANTITY DP = Waffle Pack 245 die per 5 tray stack DG = Gel-Pak® Die Tray 486 die per 6 tray stack DT = Surftape™ (Tape and Reel) 2500 per 7-inch reel DW = Gel-Pak® Wafer Tray (sawn wafer on frame) Call AMD sales office for minimum order quantity SPEED OPTION See Product Selector Guide and Valid Combinations BOOT CODE SECTOR ARCHITECTURE T = Top sector B = Bottom sector DEVICE NUMBER/DESCRIPTION Am29F200B Known Good Die 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS Flash Memory—Die Revision 1 5.0 Volt-only Program and Erase Valid Combinations AM29F200BT-75, AM29F200BB-75 (70 ns, VCC = 5.0 V ±5%) AM29F200BT-90, AM29F200BB-90 DPC 1, DPI 1, DPE 1, DGC 1, DGI 1, DGE 1, DTC 1, DTI 1, DTE 1, DWC 1, DWI 1, DWE 1 Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations. AM29F200BT-120, AM29F200BB-120 Am29F200B Known Good Die 5 S U P P L E M E N T PACKAGING INFORMATION Surftape Packaging AMD logo location Direction of Feed 12 mm Orientation relative to leading edge of tape and reel Gel-Pak and Waffle Pack Packaging Orientation relative to top left corner of Gel-Pak and Waffle Pack cavity plate AMD logo location 6 Am29F200B Known Good Die S U P P L E M E N T PRODUCT TEST FLOW Figure 1 provides an overview of AMD’s Known Good Die test flow. For more detailed information, refer to the Am29F200B product qualification database supplement for KGD. AMD implements quality assurance procedures throughout the product test flow. In addition, Wafer Sort 1 Bake 24 hours at 250°C Wafer Sort 2 Wafer Sort 3 Hot Temperature Packaging for Shipment an off-line quality monitoring program (QMP) further guarantees AMD quality standards are met on Known Good Die products. These QA procedures also allow AMD to produce KGD products without requiring or implementing burn-in. DC Parameters Functionality Programmability Erasability Data Retention DC Parameters Functionality Programmability Erasability DC Parameters Functionality Programmability Erasability Speed Incoming Inspection Wafer Saw Die Separation 100% Visual Inspection Die Pack Shipment Figure 1. AMD KGD Product Test Flow Am29F200B Known Good Die 7 S U P P L E M E N T PHYSICAL SPECIFICATIONS MANUFACTURING INFORMATION Die dimensions . . . . . . . . . . . . . . 135 mils x 150 mils . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.43 mm x 3.81 mm Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . FASL Die Thickness . . . . . . . . . . . . . . . . . . . . . . . 19.7 mils . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .500 µm Bond Pad Size . . . . . . . . . . . . . . 4.69 mils x 4.69 mils . . . . . . . . . . . . . . . . . . . . . . . . . . 115.9 µm x 115.9 µm Pad Area Free of Passivation . . . . . . . . . .13.99 mils2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9,025 µm2 Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42 Test . . . . . . . . . . . . . . . . . . . . . . Sunnyvale, CA, USA, . . . . . . . . . . . . . . . . . . . . . . . . and Penang, Malaysia Manufacturing ID (Top Boot) . . . . . . . . . . . . 98480AK (Bottom Boot) . . . . . . . .98480ABK Preparation for Shipment . . . . . . . . Penang, Malaysia Fabrication Process . . . . . . . . . . . . . . . . . . . . CS39S Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Bond Pad Metalization . . . . . . . . . . . . . . . . . . . . Al/Cu Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal, may be grounded (optional) SPECIAL HANDLING INSTRUCTIONS Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride Do not expose KGD products to ultraviolet light or process them at temperatures greater than 250°C. Failure to adhere to these handling instructions will result in irreparable damage to the devices. For best yield, AMD recommends assembly in a Class 10K clean room with 30% to 60% relative humidity. DC OPERATING CONDITIONS VCC (Supply Voltage) . . . . . . . . . . . . . . . 4.5 V to 5.5 V Junction Temperature Under Bias: Commercial, Industrial, and Extended Temperature Range . . . . .TJ (max) = 130°C Operating Temperature Commercial . . . . . . . . . . . . . . . . . . . 0°C to +70°C Industrial . . . . . . . . . . . . . . . . . . . –40°C to +85°C Extended . . . . . . . . . . . . . . . . . . –55°C to +125°C Processing Storage Store at a maximum temperature of 30°C in a nitrogenpurged cabinet or vacuum-sealed bag. Observe all standard ESD handling procedures. Contact AMD for higher temperature range devices. 8 Am29F200B Known Good Die S U P P L E M E N T TERMS AND CONDITIONS OF SALE FOR AMD NON-VOLATILE MEMORY DIE All transactions relating to unpackaged die or unpackaged wafer(s) under this agreement shall be subject to AMD’s standard terms and conditions of sale, or any revisions thereof, which revisions AMD reserves the right to make at any time and from time to time. In the event of conflict between the provisions of AMD’s standard terms and conditions of sale and this agreement, the terms of this agreement shall be controlling. AMD warrants unpackaged die or unpackaged wafer(s) of its manufacture (“Known Good Die,” “Die,” or Wafer(s)) against defective materials or workmanship for a period of one (1) year from date of shipment. This warranty does not extend beyond the first purchaser of said Die or Wafer(s). Buyer assumes full responsibility to ensure compliance with the appropriate handling, assembly and processing of Known Good Die or Wafer(s) (including but not limited to proper Die preparation, Die attach, backgrinding, wire bonding and related assembly and test activities), and compliance with all guidelines set forth in AMD’s specifications for Known Good Die or Wafer(s), and AMD assumes no responsibility for environmental effects on Known Good Die or Wafer(s) or for any activity of Buyer or a third party that damages the Die or Wafer(s) due to improper use, abuse, negligence, improper installation, improper backgrinding, accident, loss, damage in transit, or unauthorized repair or alteration by a person or entity other than AMD (“Warranty Exclusions”). The liability of AMD under this warranty is limited, at AMD's option, solely to repair the Die or Wafer(s), to send replacement Die or Wafer(s), or to make an appropriate credit adjustment or refund in an amount not to exceed the original purchase price actually paid for the Die or Wafer(s) returned to AMD, provided that: (a) AMD is promptly notified by Buyer in writing during the applicable warranty period of any defect or nonconformity in the Known Good Die or Wafer(s); (b) Buyer obtains authorization from AMD to return the defective Die or Wafer(s); (c) the defective Die or Wafer(s) is returned to AMD by Buyer in accordance with AMD’s shipping instructions set forth below; and (d) Buyer shows to AMD’s satisfaction that such alleged defect or nonconformity actually exists and was not caused by any of the above-referenced Warranty Exclusions. Buyer shall ship such defective Die or Wafer(s) to AMD via AMD’s carrier, collect. Risk of loss will transfer to AMD when the defective Die or Wafer(s) is provided to AMD’s carrier. If Buyer fails to adhere to these warranty returns guidelines, Buyer shall assume all risk of loss and shall pay for all freight to AMD's specified location. The aforementioned provisions do not extend the original warranty period of any Known Good Die or Wafer(s) that has either been repaired or replaced by AMD. THIS WARRANTY IS EXPRESSED IN LIEU OF ALL OTHER WARRANTIES, EXPRESSED OR IMPLIED, INCLUDING THE IMPLIED WARRANTY OF FITNESS FOR A PARTICULAR PURPOSE, THE IMPLIED WARRANTY OF MERCHANTABILITY AND OF ALL OTHER OBLIGATIONS OR LIABILITIES ON AMD's PART, AND IT NEITHER ASSUMES NOR AUTHORIZES ANY OTHER PERSON TO ASSUME FOR AMD ANY OTHER LIABILITIES. THE FOREGOING CONSTITUTES THE BUYER'S SOLE AND EXCLUSIVE REMEDY FOR THE FURNISHING OF DEFECTIVE OR NON CONFORMING KNOWN GOOD DIEOR WAFER(S) AND AMD SHALL NOT IN ANY EVENT BE LIABLE FOR INCREASED MANUFACTURING COSTS, DOWNTIME COSTS, DAMAGES RELATING TO BUYER’S PROCUREMENT OF SUBSTITUTE DIE OR WAFER(S) (i.e., “COST OF COVER”), LOSS OF PROFITS, REVENUES OR GOODWILL, LOSS OF USE OF OR DAMAGE TO ANY ASSOCIATED EQUIPMENT, OR ANY OTHER INDIRECT, INCIDENTAL, SPECIAL OR CONSEQUENTIAL DAMAGES BY REASON OF THE FACT THAT SUCH KNOWN GOOD DIE OR WAFER(S) SHALL HAVE BEEN DETERMINED TO BE DEFECTIVE OR NON CONFORMING. Buyer agrees that it will make no warranty representations to its customers which exceed those given by AMD to Buyer unless and until Buyer shall agree to indemnify AMD in writing for any claims which exceed AMD's warranty. Am29F200B Known Good Die 9 S U P P L E M E N T REVISION SUMMARY Revision A (1997) Packaging Information Added section. Moved orientation information from die photograph section into this section. Initial release. Revision B (December 1997) Revision D+1 (June 14, 1999) Formatted for 1998 flash data book. Physical Specifications Revision C (November 1998) Global Corrected bond pad dimensions and deleted Si from the bond pad metalization specification. Formatted to match current template. Modified Am29F200A data sheet for CS39S process technology. Revision D+2 (July 12, 1999) Global Terms and Conditions Revision D (December 1998) The device is now available in the high temperature range (–55°C to +140°C). TJ (max) for this range is +145°C. Global Revision D+3 (November 17, 1999) Added -75 speed option. Global Ordering Information Replaced references to high temperature ratings with a note to contact AMD for such devices. Replaced warranty with new version. Changed Gel-Pak quantity to 486. Corrected Surftape reel size to 7 inches. Revision D+4 (June 27, 2001) Manufacturing Information Added Penang, Malaysia as a test facility (ACN2016). Trademarks Copyright © 2001 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. 10 Am29F200B Known Good Die