AP03N70H/J-H
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Speed
▼ Simple Drive Requirement
G
▼ RoHS Compliant
BVDSS
700V
RDS(ON)
4.4Ω
ID
2.5A
S
Description
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for AC/DC converters. The
through-hole version (AP03N70J) is available for low-profile
applications.
G
G
D
S
DS
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
700
V
VGS
Gate-Source Voltage
+30
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
2.5
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
1.6
A
8
A
54.3
W
0.44
W/℃
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
31
mJ
IAR
Avalanche Current
2.5
A
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
2.3
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data & specifications subject to change without notice
1
200812114
AP03N70H/J-H
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
700
-
-
V
-
0.6
-
V/℃
VGS=10V, ID=1.6A
-
-
4.4
Ω
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
VGS=0V, ID=1mA
3
Max. Units
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=1.6A
-
2
-
S
IDSS
Drain-Source Leakage Current
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=480V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=+30V
-
-
+100
nA
ID=1A
-
12
20
nC
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
4
-
nC
VDD=300V
-
8.5
-
ns
3
td(on)
Turn-on Delay Time
tr
Rise Time
ID=2.5A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
19
-
ns
tf
Fall Time
RD=120Ω
-
8
-
ns
Ciss
Input Capacitance
VGS=0V
-
590
950
pF
Coss
Output Capacitance
VDS=25V
-
50
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
6
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3.4
5.1
Ω
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
3
Forward On Voltage
Test Conditions
IS=2.5A, VGS=0V
3
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max. Units
1.5
V
IS=2.5A, VGS=0V,
-
407
-
ns
dI/dt=100A/µs
-
2110
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25Ω , IAS=2.5A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP03N70H/J-H
4
3
10V
6.0V
o
T C =25 C
o
10V
5.0V
T C =150 C
ID , Drain Current (A)
ID , Drain Current (A)
2
3
2
5.0V
2
4.5V
1
4.0V
1
1
4.5V
V G =3.5V
V G =4.0V
0
0
0
5
10
15
20
25
0
V DS , Drain-to-Source Voltage (V)
10
15
20
25
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
Normalized RDS(ON)
1.2
Normalized BVDSS (V)
5
1.1
1.0
I D =2.5A
V G =10V
2.0
1.0
0.9
0.8
0.0
-50
0
50
100
150
-50
0
50
100
150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.6
100
Normalized VGS(th) (V)
1.4
IS (A)
10
T j = 150 o C
T j = 25 o C
1
1.2
1
0.8
0.1
0.6
0.4
0.01
0.1
0.3
0.5
0.7
0.9
1.1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP03N70H/J-H
f=1.0MHz
10000
I D =1A
V DS =480V
12
C iss
C (pF)
VGS , Gate to Source Voltage (V)
16
8
100
C oss
4
C rss
0
1
0
5
10
15
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
10
100us
Normalized Thermal Response (Rthjc)
DUTY=0.5
1ms
ID (A)
1
10ms
100ms
0.1
DC
o
T c =25 C
Single Pulse
0.2
0.1
0.05
0.1
0.02
PDM
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
0.01
1
10
100
1000
10000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4