BCR533 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=10k, R2 =10k) 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR533 XCs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10 Input on Voltage Vi(on) 50 DC collector current IC 500 mA Total power dissipation, TS = 79 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg V -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 215 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Dec-13-2001 BCR533 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 50 - - V(BR)CBO 50 - - ICBO - - 100 nA IEBO - - 0.75 mA hFE 70 - - - - 0.3 Vi(off) 0.6 - 1.5 Vi(on) 1.1 - 2.5 7 10 13 k 0.9 1 1.1 - - 100 - DC Characteristics Collector-emitter breakdown voltage V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1) - IC = 50 mA, VCE = 5 V Collector-emitter saturation voltage1) VCEsat V IC = 50 mA, IB = 2.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 10 mA, VCE = 0.3 V Input resistor R1 Resistor ratio R1 /R2 AC Characteristics Transition frequency fT MHz IC = 50 mA, VCE = 5 V, f = 100 MHz 1) Pulse test: t < 300s; D < 2% 2 Dec-13-2001 BCR533 DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) VCEsat = f (IC), hFE = 20 10 3 10 3 mA 10 2 IC hFE 10 2 10 1 10 1 10 0 10 -1 -1 10 10 0 10 1 10 2 mA 10 10 0 0.0 3 0.2 0.4 V 0.6 IC 1.0 VCEsat Input on Voltage Vi(on) = f (IC ) Input off voltage Vi(off) = f (IC) VCE = 0.3V (common emitter configuration) VCE = 5V (common emitter configuration) 10 3 10 1 mA mA 10 2 IC IC 10 0 10 1 10 0 10 -1 10 -1 10 -2 -1 10 10 0 10 1 V 10 10 -2 0.0 2 Vi(on) 0.5 1.0 V 2.0 Vi(off) 3 Dec-13-2001 BCR533 Total power dissipation Ptot = f (TS ) 400 mW Ptot 300 250 200 150 100 50 0 0 20 40 60 80 120 °C 100 150 TS Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax / PtotDC = f (tp) 10 3 10 4 Ptotmax / PtotDC K/W RthJS 10 2 10 1 10 3 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 - 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Dec-13-2001