MUR1620FCD thru MUR1660FCD Pb MUR1620FCD/MUR1640FCD/MUR1660FCD Pb Free Plating Product 16.0 Ampere Insulated Dual Doubler Ultra Fast Recovery Rectifiers ITO-220AB Unit : inch (mm) .189(4.8) .165(4.2) .272(6.9) .248(6.3) .406(10.3) .381(9.7) .134(3.4) .118(3.0) .130(3.3) .114(2.9) Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS and UPS Car Audio Amplifiers and Sound Device Systems .161(4.1)MAX .071(1.8) .055(1.4) .055(1.4) .039(1.0) .035(0.9) .011(0.3) Mechanical Data Case: ITO-220AB full plastic isolated package Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.0 gram approximately .1 .1 (2.55) (2.55) .543(13.8) .512(13.0) .606(15.4) .583(14.8) .112(2.85) .100(2.55) Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability .032(.8) MAX Case Case Case Negative Positive Common Cathode Common Anode Suffix "FCT" Suffix "FCA" .114(2.9) .098(2.5) Doubler Tandem Polarity Suffix "FCD" Case Series Tandem Polarity Suffix "FCS" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL MUR1620FCD MUR1640FCD MUR1660FCD UNIT Maximum Recurrent Peak Reverse Voltage VRRM 200 400 600 V Maximum RMS Voltage VRMS 140 280 420 V Maximum DC Blocking Voltage VDC 200 400 600 V Maximum Average Forward Rectified o Current TC=100 C (Total Device 2x8A=16A) 16.0 IF(AV) A Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load IFSM 175 VF 0.98 A 150 (JEDEC method) Maximum Instantaneous Forward Voltage @ 8.0 A (Per Diode/Per Leg) 1.3 o Maximum DC Reverse Current @TJ=25 C o At Rated DC Blocking Voltage @TJ=125 C V 100 μA μA 5.0 IR 1.7 Maximum Reverse Recovery Time (Note 1) Trr 35 nS Typical junction Capacitance (Note 2) CJ 90 pF Typical Thermal Resistance (Note 3) R JC 2.0 ℃/W TJ, TSTG -55 to + 150 ℃ Operating Junction and Storage Temperature Range NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. Rev.08T © 1995 Thinki Semiconductor Co., Ltd. Page 1/2 http://www.thinkisemi.com.tw/ MUR1620FCD thru MUR1660FCD FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.1 - FORWARD CURRENT DERATING CURVE 200 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 16 13 10 8 6 4 60 Hz Resistive or Inductive load Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 175 150 125 100 75 50 25 0 0 0 50 100 150 1 100 NUMBER OF CYCLES AT 60Hz o CASE TEMPERATURE, C FIG.4 - TYPICAL REVERSE CHARACTERISTICS FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1000 80 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 MUR1620FCD MUR1640FCD 8 MUR1660FCD 0.1 o TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 o TJ=125 C 100 10 o TJ=25 C 1 0.1 0 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 1000 o TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Rev.08T © 1995 Thinki Semiconductor Co., Ltd. Page 2/2 http://www.thinkisemi.com.tw/