Inchange Semiconductor Product Specification BD240/A/B/C Silicon PNP Power Transistors · DESCRIPTION ·With TO-220C package ·Complement to type BD239/A/B/C APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS BD240 Collector-base voltage -70 Open emitter VEBO -90 BD240C -115 BD240 -45 Collector-emitter voltage Emitter-base voltage V BD240B BD240A VCEO UNIT -55 BD240A VCBO VALUE -60 Open base V BD240B -80 BD240C -100 Open collector -5 V IC Collector current -2 A ICM Collector current-peak -4 A IB Base current -0.6 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification BD240/A/B/C Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD240 VCEsat Collector-emitter sustaining voltage TYP. MAX UNIT -45 BD240A VCEO(SUS) MIN -60 IC=-30mA; IB=0 V BD240B -80 BD240C -100 Collector-emitter saturation voltage IC=-1 A;IB=-0.2 A -0.7 V VBE Base-emitter on voltage IC=-1A ; VCE=-4V -1.3 V ICEO Collector cut-off current -0.3 mA -0.2 mA -1 mA BD240/A ICES VCE=-30V; IB=0 BD240B/C VCE=-60V; IB=0 BD240 VCE=-45V; VBE=0 BD240A VCE=-60V; VBE=0 BD240B VCE=-80V; VBE=0 BD240C VCE=-100V; VBE=0 Collector cut-off current IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-0.2A ; VCE=-4V 40 hFE-2 DC current gain IC=-1A ; VCE=-4V 15 2 Inchange Semiconductor Product Specification BD240/A/B/C Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3