Z ibo Seno Electronic Engineering Co., Ltd. EGF3A – EGF3M 3.0A SURFACE MOUNT ULTRAFAST DIODE Features ! ! ! ! ! ! B Ideally Suited for Automatic Assembly Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 1 0 0A Peak J A C Low Power Loss Ultra-Fast Recovery Time G H E Plastic Case Material has UL Flammability Classification Rating 94V-O SMB Mechanical Data ! ! ! ! ! ! Case: SMB/DO-214AA,SMC/DO-214AB, Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: SMB Weight: 0.093 grams (approx.) SMC Weight: 0.20 grams (approx.) Lead Free: For RoHS / Lead Free Version D SMC Dim Min Max Min Max A 3.30 3.94 5.59 6.22 B 4.06 4.57 6.60 7.11 C 1.96 2.21 2.75 3.18 D 0.15 0.31 0.15 0.31 E 5.00 5.59 7.75 8.13 G 0.10 0.20 0.10 0.20 H 0.76 1.52 0.76 1.52 2.00 2.62 2.00 2.62 J All Dimensions in mm Maximum Ratings and Electrical Characteristics Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TL = 100°C EGF3A EGF3B EGF3D EGF3G EGF3J EGF3K EGF3M Unit VRRM VRWM VR 50 100 200 400 600 800 1000 V VR(RMS) 35 70 140 280 420 560 800 V IO Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM Forward Voltage @IF = 3.0A VFM @TA = 25°C @TA = 100°C IRM Peak Reverse Current At Rated DC Blocking Voltage @TA=25°C unless otherwise specified 1.0 3.0 A 100 A 1.3 1.7 V 10 500 µA Reverse Recovery Time (Note 1) trr Typical Junction Capacitance (Note 2) Cj 25 pF RJL 30 °C/W Tj, TSTG -65 to +150 °C Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range 50 75 nS Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on P.C. Board with 8.0mm2 land area. EGF3A – EGF3M 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. 4 IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FWD RECTIFIED CURRENT (A) EGF3A – EGF3M Single phase half wave Resistive or Inductive load 3 2 1 0 0 25 50 75 100 125 150 175 IR, INSTANTANEOUS REVERSE CURRENT (mA) TA, AMBIENT TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve IFSM, PEAK FORWARD SURGE CURRENT (A) 200 8.3ms single half sine-wave 100 EGF3A – EGF3D 10 EGF3G EGF3J – EGF3M 1.0 0.1 0.01 0.6 1 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Peak Forward Surge Current 100 1.0 1.4 1.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 1000 100 Tj = 100°C 10 1.0 Tj = 25°C 0.1 0.01 0 10 Tj = 25°C Pulse width = 300µs 2% duty cycle 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics trr +0.5A 50Ω NI (Non-inductive) 10Ω NI Device Under Test (-) 0A (+) Pulse Generator (Note 2) 50V DC Approx (-) 1.0Ω NI Oscilloscope (Note 1) -0.25A (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 5/10ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit EGF3A – EGF3M 2 of 2 www.senocn.com Alldatasheet