AM90N06-19B Analog Power N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management such as computers, printers, and power supplies. PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 19 @ VGS = 10V 60 24 @ VGS = 4.5V ID (A) a 90 D1 • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TO-263 saves board space Fast switching speed High performance trench technology G1 S1 N-Channel MOSFET o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units VDS Drain-Source Voltage 60 V ±20 Gate-Source Voltage VGS a o TC=25 C ID Continuous Drain Current Pulsed Drain Current b Continuous Source Current (Diode Conduction) a a 90 IDM 240 IS 90 o TC=25 C P D Power Dissipation THERMAL RESISTANCE RATINGS Parameter Symbol a A W 300 TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range RθJA RθJC MaximumJunction-to-Ambient MaximumJunction-to-Case A o C Maximum Units 62.5 0.5 o C/W C/W o Notes a. Package Limited b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM90N06-19B_A AM90N06-19B Analog Power o SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions VGS(th) IGSS VDS = VGS, ID = 250 uA Limits Unit Min Typ Max Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A ID(on) A Drain-Source On-Resistance Forward Tranconductance Diode Forward Voltage Dynamic IDSS A rDS(on) gfs VSD 1 VDS = 0 V, VGS = 20 V ±100 VDS = 48 V, VGS = 0 V 1 25 o VDS = 48 V, VGS = 0 V, T J = 55 C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 2 A VGS = 4.5 V, ID = 2 A VDS = 15 V, ID = 2 A IS = 2 A, VGS = 0 V 120 V nA uA A 19 25 30 1.1 mΩ S V b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Qg Qgs Qgd td(on) tr td(off) tf VDS = 15 V, VGS = 4.5 V, ID = 2 A VDD = 25 V, RL = 25 Ω , ID = 34 A, VGEN = 10 V 20 5 10 6 6 50 20 nC nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 PRELIMINARY Publication Order Number: DS-AM90N06-19B_A