To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30SM-12 GENERAL INVERTER • UPS USE CT30SM-12 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr ¡VCES ................................................................................ 600V ¡IC ......................................................................................... 30A ¡High Speed Switching ¡Low VCE Saturation Voltage q GATE w COLLECTOR e EMITTER r COLLECTOR q e TO-3P APPLICATION AC & DC motor controls, General purpose inverters, UPS, Power supply switching, Servo controls, etc. MAXIMUM RATINGS Symbol VCES VGES VGEM IC ICM PC Tj Tstg — (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Conditions 600 ±20 Unit V V VCE = 0V ±30 30 60 250 –40 ~ +150 V A A W °C –40 ~ +150 4.8 °C g Collector current Collector current (Pulsed) Maximum power dissipation Junction temperature Storage temperature Weight Ratings VGE = 0V VCE = 0V Typical value Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30SM-12 GENERAL INVERTER • UPS USE ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol Parameter V (BR) CES Collector-emitter breakdown voltage Collector-emitter leakage current IC = 1mA, VGE = 0V VGE = ±30V, VCE = 0V Gate-emitter leakage current Gate-emitter threshold voltage VCE = 600V, VGE = 0V IC = 3.0mA, VCE = 10V IC = 30A, VGE = 15V IGES ICES VGE(th) VCE(sat) Cies Coes Cres td (on) tr td (off) tf Rth (j-c) Limits Test conditions Unit Min. 600 — — Typ. — — — Max. — ±0.5 1 VCE = 25V, VGE = 0V, f = 1MHz 4.5 — — — 6.0 2.5 1480 180 7.5 3.0 — — V V pF pF Turn-on delay time Rise time Turn-off delay time Fall time VCC = 300V, Resistance load, IC = 30A, VGE = 15V, RGE = 20Ω — — — — 54 30 135 135 — — — — pF ns ns ns Thermal resistance Junction to case — — 250 — — 0.50 ns °C/W Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance V µA mA PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) 15V COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VGE = 20V 50 Tj = 25°C 12V 11V 40 30 10V 20 9V 10 0 8V 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE (V) 10 Tj = 25°C 8 6 4 IC = 60A 30A 2 10A 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30SM-12 GENERAL INVERTER • UPS USE 5 VGE = 15V Tj = 25°C 4 3 2 1 0 0 10 20 30 40 COLLECTOR CURRENT VS. GATE EMITTER VOLTAGE CHARACTERISTIC (TYPICAL) 50 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VCE = 10V Tj = 25°C 40 30 20 10 0 50 CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE CHARACTERISTIC (TYPICAL) 104 7 5 3 2 Cies 103 7 5 3 2 102 7 5 3 Tj = 25°C 2 VGE = 0V 101 Coes 16 300V 12 8 4 80 GATE CHARGE Qg (nc) tf 2 td(off) 102 7 5 tr 3 td(on) 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 TRANSIENT THERMAL IMPEDANCE Zth (j–c) GATE-EMITTER VOLTAGE VGE (V) VCC = 200V 60 20 Tj = 25°C VCC = 300V VGE = 15V RG = 20Ω 3 101 0 10 GATE-EMITTER VOLTAGE VS. GATE CHARGE CHARACTERISTIC (TYPICAL) 20 40 16 2 Cres f = 1MHZ 20 12 103 7 5 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 0 8 SWITCHING TIME-COLLECTOR CURRENT CHARACTERISTIC (TYPICAL) COLLECTOR-EMITTER VOLTAGE VCE (V) 0 4 GATE-EMITTER VOLTAGE VGE (V) SWITCHING TIME (ns) CAPACITANCE Cies, Coes, Cres (pF) COLLECTOR CURRENT IC (A) 0 7 5 3 2 10–1 7 5 7 5 3 2 3 2 10–2 10–2 7 5 7 5 3 2 3 2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 710–3 PULSE WIDTH tw (s) Feb.1999