Advance Technical Information IXYH30N65B3D1 IXYQ30N65B3D1 XPTTM 650V IGBT GenX3TM w/ Diode VCES = IC110 = VCE(sat) tfi(typ) = Extreme Light Punch Through IGBT for 5-30kHz Switching 650V 30A 2.1V 33ns TO-247 (IXYH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 70 30 50 160 A A A A IA EAS TC = 25°C TC = 25°C 10 300 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load ICM = 60 @VCE VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 5 μs PC TC = 25°C 270 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in 6.0 5.5 g g = 25°C = 110°C = 110°C = 25°C, 1ms Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight TO-247 TO-3P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES 650 = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V G C E G = Gate E = Emitter VCE = 0V, VGE = 20V VCE(sat) IC 3.5 = 30A, VGE = 15V, Note 1 TJ = 150C © 2014 IXYS CORPORATION, All Rights Reserved Tab C = Collector Tab = Collector 6.0 V 10 A 1.5 mA 100 1.8 2.2 2.1 Optimized for Low 5-30kHz Switching Square RBSOA Anti-Parallel Fast Diode Avalanche Rated Short Circuit Capability Advantages High Power Density Extremely Rugged Low Gate Drive Requirement Applications V TJ = 150C IGES Tab E TO-3P (IXYQ) IC C Features TJ TJM Tstg TL TSOLD G nA V V Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100637(11/14) IXYH30N65B3D1 IXYQ30N65B3D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 11 IC = 30A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 30A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 30A, VGE = 15V VCE = 400V, RG = 10 Note 2 Inductive load, TJ = 150°C IC = 30A, VGE = 15V VCE = 400V, RG = 10 Note 2 RthJC RthCS TO-247 Outline 19 S 1240 172 30 pF pF pF 45 8 23 nC nC nC 17 38 0.83 87 33 0.64 ns ns mJ ns ns mJ 1.20 17 40 1.63 106 93 1.00 ns ns mJ ns ns mJ 0.25 0.55 °C/W °C/W 1 2 P 3 e Terminals: 1 - Gate 3 - Emitted Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-3P Outline Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 30A, VGE = 0V, Note 1 Irr trr IF = 30A, VGE = 0V, -diF/dt = 500A/μs, VR = 400V Characteristic Values Min. Typ. Max. TJ = 150°C 1.4 2.5 V V TJ = 150°C TJ = 150°C 23 133 A ns RthJC 0.60 °C/W 1 = Gate 3 = Emitter Notes: 2,4 = Collector 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH30N65B3D1 IXYQ30N65B3D1 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 60 180 VGE = 15V 13V 12V 50 11V VGE = 15V 160 140 14V 10V 40 120 I C (A) I C (A) 13V 30 9V 100 12V 80 11V 20 60 10V 8V 40 10 9V 20 7V 0 8V 7V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 15 VCE (V) 60 2.0 VGE = 15V 13V 12V 11V VGE = 15V I C (A) VCE(sat) - Normalized I C =60A 10V 30 9V 20 8V 6V 1 1.5 2 2.5 3 3.5 1.4 I C = 30A 1.2 1.0 0.8 7V 0 1.6 I C = 15A 10 0.5 0.6 -50 4 -25 0 25 50 VCE (V) 75 100 125 150 175 TJ (ºC) Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 6 30 1.8 40 0 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 50 20 VCE (V) Fig. 6. Input Admittance 50 TJ = 25ºC 40 5 30 I C (A) VCE (V) 4 I C = 60A TJ = 150ºC 25ºC - 40ºC 20 3 30A 10 2 15A 1 0 8 9 10 11 12 VGE (V) © 2014 IXYS CORPORATION, All Rights Reserved 13 14 15 3 4 5 6 7 VGE (V) 8 9 10 11 IXYH30N65B3D1 IXYQ30N65B3D1 Fig. 8. Gate Charge Fig. 7. Transconductance 16 28 VCE = 10V 24 TJ = - 40ºC VCE = 325V 14 I C = 30A I G = 10mA 12 20 25ºC 150ºC V GE (V) g f s (S) 10 16 12 8 6 8 4 4 2 0 0 0 5 10 15 20 25 30 35 40 45 50 0 55 5 10 15 20 I C (A) 30 35 40 45 50 Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 70 10,000 f = 1 MHz 60 Cies 50 1,000 40 I C (A) Capacitance (pF) 25 QG (nC) Coes 30 100 20 TJ = 150ºC Cres RG = 10Ω dv / dt < 10V / ns 10 10 0 0 5 10 15 20 25 30 35 40 100 200 300 400 VCE (V) 500 600 700 VCE (V) Fig. 12. Maximum Transient Thermal Impedance (IGBT) Fig. 11. Forward-Bias Safe Operating Area 1000 1 VCE(sat) Limit 25µs 10 100µs 1 TJ = 175ºC Z (th)JC (ºC / W) I D (A) 100 1ms TC = 25ºC Single Pulse 10ms DC 0.1 1 0.1 10 100 1000 VDS (V) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.00001 0.0001 0.001 0.01 Pulse Width (s) 0.1 1 IXYH30N65B3D1 IXYQ30N65B3D1 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 2.8 Eoff Eon - 2.4 10 --- Eoff TJ = 150ºC , VGE = 15V 2.4 Fig. 14. Inductive Switching Energy Loss vs. Collector Current I C = 60A 2.0 8 VCE = 400V Eon 6 ---5 RG = 10Ω , VGE = 15V VCE = 400V TJ = 150ºC E off (mJ) 4 4 1.2 3 TJ = 25ºC 0.8 2 0.4 1 Eon (mJ) 1.6 Eon (mJ) 6 E off (mJ) 1.6 2.0 I C = 30A 1.2 2 0.8 0 10 2.8 20 30 50 60 70 0 15 20 25 30 35 40 45 50 55 I C (A) Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance Eon ---- RG = 10Ω , VGE = 15V VCE = 400V 2.0 0.0 80 RG (Ω) Eoff 2.4 40 7 140 6 130 tfi 60 640 td(off) - - - - 560 TJ = 150ºC, VGE = 15V VCE = 400V 120 5 480 0.8 2 t f i (ns) 3 (mJ) 1.2 50 75 100 125 320 160 1 70 80 0 150 60 0 10 20 30 40 TJ (ºC) tfi 140 td(off) - - - - 200 160 180 140 tfi 100 110 80 100 TJ = 25ºC 20 0 30 35 40 45 I C (A) © 2014 IXYS CORPORATION, All Rights Reserved 50 55 60 t f i (ns) 140 100 25 130 120 120 60 20 td(off) - - - - 140 120 VCE = 400V 60 90 I C = 30A, 60A 80 40 80 60 20 70 40 0 25 50 75 100 TJ (ºC) 125 60 150 t d(off) (ns) TJ = 150ºC 15 80 160 t d(off) (ns) t f i (ns) 100 40 70 RG = 10Ω , VGE = 15V VCE = 400V 80 60 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature RG = 10Ω , VGE = 15V 120 50 RG (Ω) Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 160 240 I C = 60A 80 0.4 25 100 90 I C = 30A 0.0 400 I C = 30A t d(off) (ns) I C = 60A on 4 E Eoff (mJ) 110 1.6 IXYH30N65B3D1 IXYQ30N65B3D1 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 280 tri 240 160 140 td(on) - - - - Fig. 20. Inductive Turn-on Switching Times vs. Collector Current tri 140 120 TJ = 150ºC, VGE = 15V I C = 30A 80 t r i (ns) 60 40 0 40 50 60 70 19 80 18 TJ = 25ºC 60 40 30 20 VCE = 400V 17 40 20 20 0 0 15 14 20 25 30 Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature tri 55 60 80 70 22 80 20 60 60 I C (A) I C = 60A t d(on) (ns) t r i (ns) 50 90 24 100 18 40 16 20 75 100 Triangular Wave 50 TJ = 150ºC 40 TC = 75ºC VCE = 400V 30 125 14 150 TJ (ºC) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Square Wave VGE = 15V 20 RG = 10Ω D = 0.5 10 I C = 30A 50 45 100 VCE = 400V 25 40 Fig. 22. Maximum Peak Load Current vs. Frequency 26 td(on) - - - - RG = 10Ω , VGE = 15V 120 35 I C (A) RG (Ω) 140 16 TJ = 150ºC 15 80 t d(on (ns) 80 120 20 21 100 I C = 60A t d(on) (ns) t r i (ns) 120 100 160 10 td(on) - - - - RG = 10Ω , VGE = 15V VCE = 400V 200 22 0 1 10 100 fmax (kH) 1000 IXYH30N65B3D1 IXYQ30N65B3D1 Fig. 24. Reverse Recovery Charge vs. -diF/dt Fig. 23. Diode Forward Characteristics 2.0 90 TJ = 150ºC 80 1.8 IF = 60A VR = 400V 70 1.6 50 QRR (µC) I F (A) 60 TJ = 150ºC TJ = 25ºC 40 30 30A 1.4 1.2 15A 20 1.0 10 0 0.8 0 0.5 1 1.5 2 2.5 3 200 300 400 500 900 TJ = 150ºC VR = 400V 30A 25 15A 180 tRR (ns) I RR (A) 800 220 200 IF = 60A VR = 400V 700 Fig. 26. Reverse Recovery Time vs. -diF/dt Fig. 25 Reverse Recovery Current vs. -diF/dt 30 TJ = 150ºC 600 -diF/ dt (A/µs) VF (V) 20 160 IF = 60A 140 30A 120 15 15A 100 80 10 200 300 400 500 600 700 200 800 300 400 Fig. 27. Dynamic Parameters QRR, IRR vs. Junction Temperature 1.1 1 500 600 700 800 -diF/dt (A/µs) diF/dt (A/µs) Fig. 28. Maximum Transient Thermal Impedance (Diode) 1 VR = 400V IF = 30A -diF /dt = 500A/µs 0.9 Z (th)JC (ºC / W) 0.8 KF 0.7 0.6 0.5 0.1 KF IRR 0.4 0.3 KF QRR 0.2 0.1 0 20 40 60 80 100 TJ (ºC) © 2014 IXYS CORPORATION, All Rights Reserved 120 140 160 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) IXYS REF: IXY_30N65B3D1(4D-Y42) 11-19-14