ON NCP5351D 4 a synchronous buck power mosfet driver Datasheet

NCP5351
4 A Synchronous Buck
Power MOSFET Driver
The NCP5351 is a dual MOSFET gate driver optimized to drive the
gates of both high−side and low−side Power MOSFETs in a
Synchronous Buck converter. The NCP5351 is an excellent
companion to multiphase controllers that do not have integrated gate
drivers, such as ON Semiconductor’s CS5323, CS5305 or CS5307.
This architecture provides a power supply designer the flexibility to
locate the gate drivers close to the MOSFETs.
The 4.0 A drive capability makes the NCP5351 ideal for minimizing
switching losses in MOSFETs with large input capacitance. Optimized
internal, adaptive nonoverlap circuitry further reduces switching
losses by preventing simultaneous conduction of both MOSFETs.
The floating top driver design can accommodate MOSFET drain
voltages as high as 25 V. Both gate outputs can be driven low, and
supply current reduced to less than 25 mA, by applying a low logic
level to the Enable (EN) pin. An undervoltage lockout function
ensures that both driver outputs are low when the supply voltage is
low, and a thermal shutdown function provides the IC with
overtemperature protection.
The NCP5351 is pin−to−pin compatible with the SC1205 and is
available in a standard SO−8 package and thermally enhanced
DFN10.
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MARKING
DIAGRAMS
8
SO−8
D SUFFIX
CASE 751
8
1
5351
ALYW
G
1
1
DFN10
MN SUFFIX
CASE 485C
1
A
L
Y
W
G
5351
ALYWG
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
Features
•
•
•
•
•
•
•
•
•
•
•
4.0 A Peak Drive Current
Rise and Fall Times < 15 ns Typical into 6000 pF
Propagation Delay from Inputs to Outputs < 20 ns
Adaptive Nonoverlap Time Optimized for Large Power MOSFETs
Floating Top Driver Accommodates Applications Up to 25 V
Undervoltage Lockout to Prevent Switching when the Input
Voltage is Low
Thermal Shutdown Protection Against Overtemperature
< 1.0 mA Quiescent Current − Enabled
25 mA Quiescent Current − Disabled
Internal TG to DRN Pulldown Resistor Prevents HV Supply−Induced
Turn On of High−Side MOSFET
Pb−Free Package is Available
PIN CONNECTIONS
DRN
1
SO−8
8
PGND
TG
BST
BG
VS
CO
EN
1
DRN
TG
N/C
BST
CO
DFN10
10
GND
BG
N/C
VS
EN
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
February, 2010 − Rev. 13
1
Publication Order Number:
NCP5351/D
NCP5351
BST
Level
Shifter
+
−
VS
+
−
TG
4.25 V
DRN
Delay
Nonoverlap
Control
+
−
EN
4.0 V
Delay
Thermal
Shutdown
VS
BG
CO
PGND
Figure 1. Block Diagram
Table 1. Input−Output Truth Table
EN
CO
DRN
TG
BG
L
X
X
L
L
H
L
< 3.0 V
L
H
H
H
< 3.0 V
H
L
H
L
> 5.0 V
L
L
H
H
> 5.0 V
H
L
VCO
tpdlTG
tpdlBG
VTG−VDRN
tfTG
trTG
tpdhTG
(Nonoverlap)
VBG
trBG
tfBG
tpdhBG
(Nonoverlap)
VDRN
4.0 V
Figure 2. Timing Diagram
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2
NCP5351
PACKAGE PIN DESCRIPTION
Pin Number
SO−8
DFN−10
Pin Symbol
1
1
DRN
2
2
TG
Driver output to the high−side MOSFET gate.
3
4
BST
Bootstrap supply voltage input. In conjunction with a Schottky diode to VS, a 0.1 mF to
1.0 mF ceramic capacitor connected between BST and DRN develops supply voltage
for the high−side driver (TG).
4
5
CO
Logic level control input produces complementary output states − no inversion at TG;
inversion at BG.
−
3, 8
N/C
Not Connected.
5
6
EN
Logic level enable input forces TG and BG low, and supply current to 10 mA when
EN is low.
6
7
VS
Power supply input. A 0.1 mF to 1.0 mF ceramic capacitor should be connected from
this pin to PGND.
7
9
BG
Driver output to the low−side (synchronous rectifier) MOSFET gate.
8
−
PGND
Ground.
−
10
GND
Ground.
Description
The switching node common to the high and low−side FETs. The high−side (TG)
driver and supply (BST) are referenced to this pin.
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NCP5351
MAXIMUM RATINGS − SO−8
Rating
Value
Unit
Operating Junction Temperature, TJ
Internally Limited
°C
Package Thermal Resistance: SO−8
Junction−to−Case, RqJC
Junction−to−Ambient, RqJA
45
165
°C/W
°C/W
−65 to 150
°C
230 peak
260 peak
°C
1
−
Storage Temperature Range, TS
Lead Temperature Soldering:
Reflow: (SMD styles only) (Note 1)
Pb−Free
MSL Rating
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE: This device is ESD sensitive. Use standard ESD precautions when handling.
1. 60 seconds maximum above 183°C.
MAXIMUM RATINGS − DFN−10
Rating
Symbol
Value
Unit
Thermal Resistance, Junction−to−Air
RJA
68.5
°C/W
Operating Ambient Temperature Range
TA
−30 to 85
°C
VESD
> 2500
> 150
V
Moisture Sensitivity
MSL
Level 1
Storage Temperature Range
Tstg
−55 to 150
°C
Junction Operating Temperature
TJ
−30 to 125
°C
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 2)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. This device series contains ESD protection and exceeds the following tests:
Human Body Model, 100 pF discharge through a 1.5 kW following specification JESD22/A114.
Machine Model, 200 pF discharged through all pins following specification JESD22/A115.
Latchup as per JESD78 Class II: > 100 mA.
MAXIMUM RATINGS
Pin Symbol
Pin Name
VMAX
VMIN
ISOURCE
ISINK
VS
Main Supply Voltage Input
6.3 V
−0.3 V
NA
4.0 A Peak (< 100 ms)
250 mA DC
BST
Bootstrap Supply Voltage
Input
25 V wrt/PGND
6.3 V wrt/DRN
−0.3 V wrt/DRN
NA
4.0 A Peak (< 100 ms)
250 mA DC
DRN
Switching Node
(Bootstrap Supply Return)
25 V
−1.0 V DC
−5.0 V for 100 ns
−6.0 V for 20 ns
4.0 A Peak (< 100 ms)
250 mA DC
NA
TG
High−Side Driver Output
(Top Gate)
25 V wrt/PGND
6.3 V wrt/DRN
−0.3 V wrt/DRN
4.0 A Peak (< 100 ms)
250 mA DC
4.0 A Peak (< 100 ms)
250 mA DC
BG
Low−Side Driver Output
(Bottom Gate)
6.3 V
−0.3 V
4.0 A Peak (< 100 ms)
250 mA DC
4.0 A Peak (< 100 ms)
250 mA DC
CO
TG & BG Control Input
6.3 V
−0.3 V
1.0 mA
1.0 mA
EN
Enable Input
6.3 V
−0.3 V
1.0 mA
1.0 mA
PGND
Ground
0V
0V
4.0 A Peak (< 100 ms)
250 mA DC
NA
NOTE:
All voltages are with respect to PGND except where noted.
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NCP5351
ELECTRICAL CHARACTERISTICS (0°C < TJ < 125°C; VS = 5.0 V; 4.0 V < VBST < 25 V; VEN = VS; unless otherwise noted)
Test Conditions
Parameter
Min
Typ
Max
Unit
DC OPERATING SPECIFICATIONS
POWER SUPPLY
VS Quiescent Current, Operating
VCO = 0 V, 4.5 V; No output switching
−
1.0
−
mA
VBST Quiescent Current, Operating
VCO = 0 V, 4.5 V; No output switching
−
50
−
mA
Quiescent Current, Non−Operating
VEN = 0 V; VCO = 0 V, 4.5 V
−
−
25
mA
Undervoltage Lockout
Start Threshold
CO = 0 V
4.05
4.25
4.48
V
Hysteresis
CO = 0 V
−
275
−
mV
CO INPUT CHARACTERISTICS
High Threshold
−
2.0
−
−
V
Low Threshold
−
−
−
0.8
V
−
0
1.0
mA
2.0
−
−
V
Input Bias Current
0 < VCO < VS
EN INPUT CHARACTERISTICS
High Threshold
Both outputs respond to CO
Low Threshold
Both outputs are low, independent of CO
−
−
0.8
V
Input Bias Current
0 < VEN < VS
−
0
10
mA
THERMAL SHUTDOWN
Overtemperature Trip Point
−
−
170
−
°C
Hysteresis
−
−
30
−
°C
−
−
4.0
−
A
HIGH−SIDE DRIVER
Peak Output Current
Output Resistance (Sourcing)
Duty Cycle < 2.0%, Pulse Width < 100 ms, TJ = 125°C,
VBST − VDRN = 4.5 V, VTG = 4.0 V + VDRN
−
0.5
−
W
Output Resistance (Sinking)
Duty Cycle < 2.0%, Pulse Width < 100 ms,
TJ = 125°C, VBST − VDRN = 4.5 V, VTG = 0.5 V + VDRN
−
0.42
−
W
−
4.0
−
A
LOW−SIDE DRIVER
Peak Output Current
−
Output Resistance (Sourcing)
Duty Cycle < 2.0%, Pulse Width < 100 ms, TJ = 125°C,
VS = 4.5 V, VBG = 4.0 V
−
0.6
−
W
Output Resistance (Sinking)
Duty Cycle < 2.0%, Pulse Width < 100 ms, TJ = 125°C,
VS = 4.5 V, VBG = 0.5 V
−
0.42
−
W
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NCP5351
ELECTRICAL CHARACTERISTICS (continued) (0°C < TJ < 125°C; VS = 5.0 V; 4.0 V < VBST < 25 V; VEN = VS, CLOAD = 5.7 nF;
unless otherwise noted.)
Parameter
Test Conditions
Min
Typ
Max
Unit
AC OPERATING SPECIFICATIONS
HIGH−SIDE DRIVER
Rise Time
VBST − VDRN = 5.0 V, TJ = 125°C
−
8.0
16
ns
Fall Time
VBST − VDRN = 5.0 V, TJ = 125°C
−
14
21
ns
Propagation Delay Time,
TG Going High (Nonoverlap Time)
VBST − VDRN = 5.0 V, TJ = 125°C
30
45
60
ns
Propagation Delay Time,
TG Going Low
VBST − VDRN = 5.0 V, TJ = 125°C
−
18
37
ns
Rise Time
TJ = 125°C
−
10
15
ns
Fall Time
TJ = 125°C
−
12
20
ns
Propagation Delay Time,
BG Going High (Non−Overlap
Time)
TJ = 125°C
25
55
80
ns
Propagation Delay Time,
BG Going Low
TJ = 125°C
−
10
18
ns
VS Rising
EN = VS, CO = 0 V, dVS/dt > 1.0 V/ms, from 4.0 V to
4.5 V, time to BG > 1.0 V, TJ = 125°C
−
30
−
ms
VS Falling
EN = VS, CO = 0 V, dVS/dt < −1.0 V/ms, from 4.5 V to
4.0 V, time to BG < 1.0 V, TJ = 125°C
−
500
−
ms
LOW−SIDE DRIVER
UNDERVOLTAGE LOCKOUT
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PWRGD
3.3 V
Figure 3. Application Diagram
VID2
VID3
VID4
PWRLS
VFFB
SS
PWRGD
DRVON
SGND Near
Socket
VFFB
Connection
8
7
6
5
4
3
2
1
32
9
VID2
VID3
VID4
31
10
VID5
VID0
VID1
30
NCP5314
11
ENABLE
29
12
3.3 V
28
13
12 V
27
14
5.0 V
25
26
NTC Near Inductor
17
18
19
20
21
22
23
ILIM 24
ROSC
VCC
GATE1
GATE2
GATE3
GATE4
GND
VID1
VID0
VID5
ENABLE
CS2N
CS2P
CS1N
CS1P
SGND
VDRP
VFB
COMP
CS4N
CS4P
CS3N
CS3P
7
15
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16
ATX 12 V
BST
TG
DRN
PGND BG
NCP5351
6
VS
4
CO
5
EN
8
BST
TG
DRN
PGND BG
NCP5351
6
VS
4
CO
5
EN
8
BST
TG
DRN
PGND BG
NCP5351
6
VS
4
CO
5
EN
8
BST
TG
DRN
PGND BG
NCP5351
6
VS
4
CO
5
EN
8
3
2
1
7
3
2
1
7
3
2
1
7
3
2
1
7
+
+
GND
VCORE
NCP5351
NCP5351
APPLICATIONS INFORMATION
Theory Of Operation
the drain (switch node) is sampled and the BG is disabled for
a fixed delay time (tpdhBG) after the drain drops below 4 V,
thus eliminating the possibility of shoot−through. When the
bottom MOSFET is turning off, TG is disabled for a fixed
delay (tpdhTG) after BG drops below 2.0 V. (See Figure 2 for
complete timing information).
Enable Pin
The Enable Pin (EN) is controlled by a logic level input.
With a logic level high on the EN pin, the output states of the
drivers are controlled by applying a logic level voltage to the
CO pin. With a logic level low both gates are forced low. By
bringing both gates low when disabling, the output voltage
is prevented from ringing below ground, which could
potentially cause damage to the microprocessor or the
device being powered.
Layout Guidelines
When designing any switching regulator, the layout is
very important for proper operation. The designer should
follow some simple layout guidelines when incorporating
gate drivers in their designs. Gate drives experience high
di/dt during switching and the inductance of gate drive
traces should be minimized. Gate drive traces should be kept
as short and wide as practical and should have a return path
directly below the gate trace. The use of a ground plane is a
desirable way to return ground signals. Also, component
location will make a difference. The boost and the VS
capacitor are the most critical and should be placed as close
as possible to the driver IC pins, as shown in Figure 4(a),
C21 and C17.
Undervoltage Lockout
The TG and BG are held low until VS reaches 4.25 V
during startup. The CO pin takes control of the gates’ states
when the VS threshold is exceeded. If VS decreases 300 mV
below threshold, the output gate will be forced low and
remain low until VS rises above startup threshold.
Adaptive Nonoverlap
The Adaptive Nonoverlap prevents a condition where the
top and bottom MOSFETs conduct at the same time and
short the input supply. When the top MOSFET is turning off,
5V
12 V
D32
BAT54
C21
1.0 mF
4
CO
3
BST
2
TG
1
DRN
GATE1
U3
Gate
Driver
Q7
80NO2
5
EN
6
VS
7
BG
8
PGND
NCP5351
DRVON
R33
C17
2.2
1.0 mF
(a)
(b)
Figure 4. Proper Layout (a), Component Selection (b)
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Q9
80NO2
NCP5351
TYPICAL PERFORMANCE CHARACTERISTICS
COM
EN
CO
HOT
BST
NCP5351
VS
Measurement
R1
1.0 k
TG
BG
C1
C2
C3
C4
1.0 mF 1.0 mF 100 nF 100 nF
PGND DRN
−5.0 V
R2*
0.108 W
*Applied after power up and input.
Conditions: BST − DRN = 5.0 V;
Room Temperature;
Oscilloscope referenced to VS (5.0 V).
Figure 5. Top Gate Sinking Current from 0.108 W
Input
Pulse
50 ns
0V
−5.0 V
0V
TG
−5.0 V
CO
0V
−5.0 V
COM
HOT
VS
EN
BST
C2
1.0 mF
Figure 7. Bottom Gate Sinking Current from 0.108 W
Input
Pulse
50 ns
−3.5 V
−4.5 V
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R2*
0.108 W
C1
1.0 mF
*Applied after power up and input.
Conditions: VS = 5.0 V;
Room Temperature;
CO = 0 V.
Figure 8. Bottom Gate Sinking
TG
BG
DRN
PGND CO
−5.0 V
DRN −3.5 V
−4.5 V
0V
BG
−0.5 V
NCP5351
R3
50
R1
1.0 k
Measurement
Figure 6. Top Gate Sinking
NCP5351
TYPICAL PERFORMANCE CHARACTERISTICS
+5.0 V
EN
CO
BST
NCP5351
VS
TG
BG
PGND DRN
+
−
C1
C2
C3
C4
1.0 mF 1.0 mF 100 nF 100 nF
Measurement
R1
1.0 k
R2*
0.108 W
*Applied after power up and input.
Conditions: VS = 5.0 V;
Room Temperature; DRN = 0 V.
Figure 9. Bottom Gate Sourcing Current into 0.108 W
CO
BG
Input
Pulse
50 ns
0
+5.0 V
0V
0
Figure 10. Bottom Gate Sourcing
+5.0 V
EN
CO
BST
NCP5351
VS
TG
BG
PGND DRN
+
−
C1
C2
C3
C4
1.0 mF 1.0 mF 100 nF 100 nF
Measurement
R1
1.0 k
R2*
0.108 W
*Applied after power up and input.
Conditions: BST − DRN = 5.0 V;
Room Temperature; DRN = 0 V.
Figure 11. Top Gate Sourcing Current into 0.108 W
CO
TG
Input
Pulse
50 ns
0
+5.0 V
0V
0
Figure 12. Top Gate Sourcing
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NCP5351
TYPICAL PERFORMANCE CHARACTERISTICS
+5.0 V
EN
CO
PGND
BST
TG
DRN
BG
C4
100 nF
Measurements
Gated
Pulse
Burst (2)
R2
50
VS
NCP5351
R1
1.0 k
+
−
Input
Pulse
C2
10 mF
C1
10 mF
C3
100 nF
+
−
tpdlBG
tpdlTG
4.0 V
DRN
CO
TG
BG
tpdhTG
(non−overlap)
tpdhBG
(non−overlap)
Figure 13. Nonoverlap Test Configuration
Conditions: VS = 5.0 V; BST − DRN = 5.0 V; CLOAD = 5.7 nF;
Room Temperature.
Conditions: VS = 5.0 V; BST − DRN = 5.0 V; CLOAD = 5.7 nF;
Room Temperature.
Figure 14. Top Gate Rise Time
Figure 15. Top Gate Fall Time
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NCP5351
TYPICAL PERFORMANCE CHARACTERISTICS
Conditions: VS = 5.0 V; BST − DRN = 5.0 V; CLOAD = 5.7 nF;
Room Temperature.
Conditions: VS = 5.0 V; BST − DRN = 5.0 V; CLOAD = 5.7 nF;
Room Temperature.
Figure 16. Bottom Gate Fall Time
Figure 17. Bottom Gate Rise Time
+5.0 V
+
−
TG
BG
PGND DRN
C3
5.7 nF
Measurements
+5.0 V
0V
EN
CO
BST
NCP5351
VS
Input
Pulse
60 ns
C4
5.7 nF
C1
100 nF
C2
100 nF
Figure 18. Bottom Gate and Top Gate Rise/Fall Time Test
ORDERING INFORMATION
Package
Shipping†
SOIC−8
98 Units / Rail
NCP5351DG
SOIC−8
(Pb−Free)
98 Units / Rail
NCP5351DR2
SOIC−8
2500 / Tape & Reel
NCP5351DR2G
SOIC−8
(Pb−Free)
2500 / Tape & Reel
NCP5351MNR2
DFN10
2500 / Tape & Reel
DFN10
(Pb−Free)
2500 / Tape & Reel
Device
NCP5351D
NCP5351MNR2G
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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NCP5351
PACKAGE DIMENSIONS
DFN10, 3x3, 0.5P
CASE 485C−01
ISSUE B
D
PIN 1
REFERENCE
2X
ÇÇÇ
ÇÇÇ
ÇÇÇ
ÇÇÇ
0.15 C
2X
EDGE OF PACKAGE
A
B
L1
E
DETAIL A
Bottom View
(Optional)
MOLD CMPD
(A3)
DETAIL B
A1
A
10X
SIDE VIEW
A1
D2
1
C
DETAIL A
e
L
A3
DETAIL B
Side View
(Optional)
SEATING
PLANE
0.08 C
10X
ÉÉÉ
ÉÉÉ
EXPOSED Cu
TOP VIEW
0.15 C
0.10 C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.25 AND 0.30 MM FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
5. TERMINAL b MAY HAVE MOLD COMPOUND
MATERIAL ALONG SIDE EDGE. MOLD
FLASHING MAY NOT EXCEED 30 MICRONS
ONTO BOTTOM SURFACE OF TERMINAL b.
6. DETAILS A AND B SHOW OPTIONAL VIEWS
FOR END OF TERMINAL LEAD AT EDGE OF
PACKAGE.
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
L1
MILLIMETERS
MIN
MAX
0.80
1.00
0.00
0.05
0.20 REF
0.18
0.30
3.00 BSC
2.40
2.60
3.00 BSC
1.70
1.90
0.50 BSC
0.19 TYP
0.35
0.45
0.00
0.03
SOLDERING FOOTPRINT*
5
2.6016
10X
E2
K
10
10X
0.10 C A B
0.05 C
6
2.1746
b
1.8508
3.3048
BOTTOM VIEW
NOTE 3
10X
0.5651
10X
0.3008
0.5000 PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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13
NCP5351
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AJ
−X−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
A
8
5
S
B
0.25 (0.010)
M
Y
M
1
4
−Y−
K
G
C
N
DIM
A
B
C
D
G
H
J
K
M
N
S
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
D
0.25 (0.010)
M
Z Y
S
X
M
J
S
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8_
0.25
0.50
5.80
6.20
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
SOLDERING FOOTPRINT*
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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