ATP108 Ordering number : ENA1604A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP108 General-Purpose Switching Device Applications Features • • • Low ON-resistance Slim package Halogen free compliance • • • Large current 4.5V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --40 V ±20 V --70 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch 150 Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 95 mJ --35 A Drain Current (PW≤10μs) Avalanche Current *2 PW≤10μs, duty cycle≤1% Tc=25°C --210 A 60 W °C Note : *1 VDD=--15V, L=100μH, IAV=--35A *2 L≤100μH, Single pulse Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP108-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP108 6.05 4.6 9.5 7.3 LOT No. TL Electrical Connection 0.8 2.3 0.6 2.3 0.55 0.7 3 0.1 0.5 1 1.7 4,2 2 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain 1 3 SANYO : ATPAK http://semicon.sanyo.com/en/network 61312 TKIM/N1109PA TKIM TC-00002147 No.A1604-1/7 ATP108 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions ID=--1mA, VGS=0V VDS=--40V, VGS=0V Ratings min typ Unit max --40 V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--35A RDS(on)1 ID=--35A, VGS=--10V 8 10.4 mΩ RDS(on)2 ID=--18A, VGS=--4.5V 11.5 16.5 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance --1.5 --1 μA ±10 μA --2.6 65 V S 3850 pF 560 pF Crss 390 pF Turn-ON Delay Time td(on) 19 ns Rise Time tr 340 ns Turn-OFF Delay Time td(off) 340 ns Fall Time tf 290 ns Total Gate Charge Qg 79.5 nC Gate-to-Source Charge Qgs 20 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--20V, f=1MHz See specified Test Circuit. VDS=--20V, VGS=--10V, ID=--70A 15 IS=--70A, VGS=0V --1.05 nC --1.5 V Switching Time Test Circuit 0V --10V VDD= --20V VIN ID= --35A RL=0.57Ω VIN D PW=10μs D.C.≤1% VOUT G ATP108 P.G 50Ω S Ordering Information Device ATP108-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No.A1604-2/7 ATP108 --40 --20 --40 --30 --1.0 --1.2 --1.4 --1.6 --1.8 Tc=25°C Single pulse ID= --18A 20 18 --35A 16 14 12 10 8 6 4 --2 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V °C 25 3 C 5° 2 = Tc 10 --2 7 75 °C 5 3 2 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A 5 7 --100 VDD= --20V VGS= --10V 1000 tf 2 100 tr 7 5 3 td(on) 2 25° C Tc= --3.5 --4.0 --4.5 IT15181 8A 15 = --1 , ID 4.5V = -A VGS = --35 V, I D 0 1 -= VGS 10 5 --25 0 25 50 75 100 Case Temperature, Tc -- °C 2 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.001 125 150 IT15183 IS -- VSD VGS=0V Single pulse 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 10000 --1.4 IT15185 f=1MHz 7 Ciss, Coss, Crss -- pF 3 --3.0 20 5 td(off) 5 --2.5 Single pulse 0 --50 7 10 7 --0.1 --2.0 RDS(on) -- Tc IT15184 SW Time -- ID 2 --1.5 25 Source Current, IS -- A 7 5 --1.0 Gate-to-Source Voltage, VGS -- V --16 VDS= --10V Single pulse 100 --0.5 IT15182 | yfs | -- ID 2 0 IT15180 RDS(on) -- VGS 22 0 --2.0 C --0.8 --25° --0.6 5°C 25°C --0.4 Tc= 7 --0.2 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 24 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --50 --10 Drain-to-Source Voltage, VDS -- V Forward Transfer Admittance, | yfs | -- S --60 --20 --10 Switching Time, SW Time -- ns --70 25° C .5V VGS= --3 --30 0 Tc= -- --80 75° C --2 5°C --50 VDS= --10V Single pulse --90 Drain Current, ID -- A --60 5V --4.0V --16 .0 Drain Current, ID -- A --70 ID -- VGS --100 . --4 --6 .0 -V 10.0V --8.0 V --80 V Tc=25°C Single pulse 25°C 75°C ID -- VDS --90 Ciss 3 2 1000 7 Coss 5 Crss 3 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 3 5 7 --100 IT15186 2 0 --5 --10 --15 --20 --25 --30 Drain-to-Source Voltage, VDS -- V --35 --40 IT15187 No.A1604-3/7 ATP108 VGS -- Qg --10 3 2 --7 --6 --5 3 2 10 20 30 40 50 60 Total Gate Charge, Qg -- nC PD -- Tc 80 40 30 20 10 0 20 40 60 80 100 3 120 Case Temperature, Tc -- °C 140 160 IT15190 0μ s s 5 7 --1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 IT15189 EAS -- Ta 120 50 0 2 IT15188 60 1m Tc=25°C Single pulse --0.1 --0.1 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 70 70 Operation in this area is limited by RDS(on). 3 2 --1 0 m 0m s s --10 7 5 --1.0 7 5 10 10 3 2 --2 0 ID= --70A 10 μs n --3 10 io at er --4 --100 7 5 PW≤10μs op Drain Current, ID -- A --8 IDP= --210A C D Gate-to-Source Voltage, VGS -- V --9 ASO 5 VDS= --20V ID= --70A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT15179 No.A1604-4/7 ATP108 Taping Specification ATP108-TL-H No.A1604-5/7 ATP108 Outline Drawing ATP108-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No.A1604-6/7 ATP108 Note on usage : Since the ATP108 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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