FRFET TM FQB5N50CF 500V N-Channel MOSFET Features Description • 5A, 500V, RDS(on) = 1.55 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18nC) • Low Crss ( typical 15pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. • Fast switching • 100% avalanche tested • Improved dv/dt capability D D G G D2-PAK S FQB Series S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) IDM Drain Current - Pulsed - Continuous (TC = 100°C) (Note 1) FQB5N50CF Units 500 V 5 A 3.2 A 20 A ± 30 V 300 mJ VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 5 A EAR Repetitive Avalanche Energy (Note 1) 9.6 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 96 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds - Derate above 25°C 0.76 W/°C -55 to +150 °C 300 °C Thermal Characteristics Symbol Parameter FQB5N50CF Units 1.3 °C/W Thermal Resistance, Junction-to-Ambient* 40 °C/W Thermal Resistance, Junction-to-Ambient 62.5 °C/W RθJC Thermal Resistance, Junction-to-Case RθJA RθJA * When mounted on the minimum pad size recommended (PCB Mount) ©2006 Fairchild Semiconductor Corporation FQB5N50CF Rev. A 1 www.fairchildsemi.com FQB5N50CF 500V N-Channel MOSFET May 2006 Device Marking Device Package Reel Size Tape Width Quantity FQB5N50CF FQB5N50CFTM D2-PAK 330mm 24mm 800 FQB5N50CF FQB5N50CFTF D2-PAK 330mm 24mm 800 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 500 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 10 µA VDS = 400 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 1.3 1.55 Ω -- 5.2 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.5A gFS Forward Transconductance VDS = 40 V, ID = 2.5 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 480 625 pF -- 80 105 pF -- 15 20 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 250 V, ID = 5A, RG = 25 Ω (Note 4, 5) VDS = 400 V, ID = 5A, VGS = 10 V (Note 4, 5) -- 12 35 ns -- 46 100 ns -- 50 110 ns -- 48 105 ns -- 18 24 nC -- 2.2 -- nC -- 9.7 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 5 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 20 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5 A -- -- 1.4 V trr Reverse Recovery Time -- 65 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 5 A, dIF / dt = 100 A/µs -- 110 -- nC (Note 4) NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 21.5mH, IAS = 5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 2 FQB5N50CF Rev. A www.fairchildsemi.com FQB5N50CF 500V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V ID, Drain Current [A] 10 1 10 ID, Drain Current [A] 1 0 10 -1 0 10 25°C -55°C 0 10 Notes : 1. VDS = 40V Notes : 1. 250µs Pulse Test 2. TC = 25°C -1 10 150°C 2. 250µs Pulse Test -1 10 2 1 10 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 4.5 1 10 3.5 IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 4.0 VGS = 10V 3.0 2.5 2.0 VGS = 20V 1.5 1.0 Note : TJ = 25°C 0 10 150? Notes : 1. VGS = 0V 25? 2. 250µs Pulse Test -1 0.5 0 5 10 10 15 0.2 0.4 0.6 ID, Drain Current [A] 0.8 1.0 1.2 1.4 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 1200 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 800 10 VGS, Gate-Source Voltage [V] Capacitance [pF] 1000 Ciss Coss 600 400 Notes ; 1. VGS = 0 V Crss 2. f = 1 MHz 200 VDS = 100V VDS = 250V 8 VDS = 400V 6 4 2 Note : ID = 5A 0 -1 10 0 0 10 0 1 10 10 15 20 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 FQB5N50CF Rev. A 5 www.fairchildsemi.com FQB5N50CF 500V N-Channel MOSFET Typical Performance Characteristics FQB5N50CF 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 Notes : 1. VGS = 0 V 0.9 2. ID = 250µA 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 0.5 2. ID = 2.5 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 50 100 150 200 TJ, Junction Temperature [°C] TJ, Junction Temperature [°C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 2 6 10 Operation in This Area is Limited by R DS(on) 5 ID, Drain Current [A] ID, Drain Current [A] 10 µs 100 µs 1 10 1ms 10ms 100ms DC 0 10 * Notes : o 1. TC = 25 C 4 3 2 1 o 2. TJ = 150 C 3. Single Pulse -1 10 0 10 1 2 10 0 25 3 10 10 50 75 100 125 150 175 o VDS, Drain-SourceVoltage[V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 0 10 Z? JC(t), Thermal Response D=0.5 0.2 0.1 -1 10 0.05 PDM 0.02 0.01 t1 t2 * Notes : 0 1. ZθJC(t) = 1.3 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) -2 10 single pulse -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Square Wave Pulse Duration [sec] 4 FQB5N50CF Rev. A www.fairchildsemi.com FQB5N50CF 500V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 FQB5N50CF Rev. A www.fairchildsemi.com FQB5N50CF 500V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 FQB5N50CF Rev. A www.fairchildsemi.com FQB5N50CF 500V N-Channel MOSFET Mechanical Dimensions D2-PAK Dimensions in Millimeters 7 FQB5N50CF Rev. A www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 8 FQB5N50CF Rev. A www.fairchildsemi.com FQB5N50CF 500V N-Channel MOSFET TRADEMARKS