Freescale MRF6S27050HSR3 Rf power field effect transistor Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF6S27050H
Rev. 1, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF6S27050HR3
MRF6S27050HSR3
Designed for CDMA base station applications with frequencies from 2500 to
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ =
500 mA, Pout = 7 Watts Avg., f = 2615 MHz, Channel Bandwidth =
3.84 MHz. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 22.5%
ACPR @ 5 MHz Offset — - 42.5 dBc @ 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2600 MHz, 50 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2500 - 2700 MHz, 7 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S27050HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S27050HSR3
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain - Source Voltage
Rating
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Unit
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 43 W CW
Case Temperature 72°C, 7 W CW
RθJC
0.85
0.98
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S27050HR3 MRF6S27050HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 250 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 500 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.2 Adc)
VDS(on)
—
0.21
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.83
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
232
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 7 W Avg. W - CDMA, f = 2615 MHz,
Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
15
16
18
dB
Drain Efficiency
ηD
20.5
22.5
—
%
ACPR
- 40
- 42.5
—
dBc
IRL
—
- 10
—
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
MRF6S27050HR3 MRF6S27050HSR3
2
RF Device Data
Freescale Semiconductor
R1
B1
B2
VBIAS
RF
INPUT
+
+
C7
C6
C5
C4
Z2
Z3
Z4
Z5
+
C8
C9
C10
C11
C12
Z12
Z13
Z14
Z15
Z16
C13
+
+
C14
C15
Z9
C3
Z8
Z10
Z1
+
Z6
Z11
Z7
C1
Z17
VSUPPLY
RF
OUTPUT
C2
DUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.748″
0.273″
0.055″
0.090″
0.195″
0.797″
0.082″
0.050″
0.070″
x 0.081″
x 0.081″
x 0.220″
x 0.440″
x 0.170″
x 0.490″
x 0.490″
x 0.476″
x 0.350″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
PCB
0.091″ x 0.753″ Microstrip
0.150″ x 0.753″ Microstrip
0.153″ x 0.543″ Microstrip
0.145″ x 0.384″ Microstrip
0.446″ x 0.148″ Microstrip
0.130″ x 0.425″ Microstrip
0.384″ x 0.081″ Microstrip
0.730″ x 0.081″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55
Figure 1. MRF6S27050HR3(SR3) Test Circuit Schematic
Table 5. MRF6S27050HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead
2508051107Y0
Fair - Rite
B2
Ferrite Bead, Short
2743019447
Fair - Rite
C1, C2
4.3 pF Chip Capacitors
ATC100B4R3BT500XT
ATC
C3, C8
3.6 pF Chip Capacitors
ATC100B3R6BT500XT
ATC
C4, C11
2.2 μF, 50 V Chip Capacitors
C1825C225J5RAC
Kemet
C5
0.01 μF, 100 V Chip Capacitor
C1825C103J1RAC
Kemet
C6
22 μF, 25 V Tantulum Capacitor
T491D226K025AT
Kemet
C7
47 μF, 16 V Tantalum Capacitor
T491D476K016AT
Kemet
C9, C10
10 μF, 50 V Tantalum Capacitors
T491D106K050AT
Kemet
C12, C13
1.0 μF, 50 V Chip Capacitors
GRM32RR71H105KA01B
Murata
C14
330 μF, 63 V Electrolytic Capacitor
EMVY630GTR331MMH0S
Nippon Chemi - Con
C15
47 μF, 50 V Electrolytic Capacitor
EMVK500ADA470MHA0G
United Chemi - Con
R1
2.7 Ω, 1/4 W Chip Resistor
CRCW12062R7FKEA
Vishay
MRF6S27050HR3 MRF6S27050HSR3
RF Device Data
Freescale Semiconductor
3
C11
C14
B1
B2
C3
C9 C10
C15
C8
R1
C7 C6
C4 Top
C5 Bottom
C12
C13
C2
CUT OUT AREA
C1
MRF6S27050
Rev. 1A
Figure 2. MRF6S27050HR3(SR3) Test Circuit Component Layout
MRF6S27050HR3 MRF6S27050HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Gps
16
15
23
22
VDD = 28 Vdc, Pout = 7 W (Avg.), IDQ = 500 mA
21
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 20
IRL
14
13
−40
ACPR
−50
12
−60
ALT1
11
−70
2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700
−5
−10
−15
−20
−25
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
17
ηD
ηD, DRAIN
EFFICIENCY (%)
18
24
ACPR (dBc), ALT1 (dBc)
19
f, FREQUENCY (MHz)
Figure 3. Single - Carrier W - CDMA Broadband Performance
@ Pout = 7 Watts Avg.
33
Gps, POWER GAIN (dB)
17
16
32
Gps
VDD = 28 Vdc, Pout = 14 W (Avg.)
31
IDQ = 500 mA, Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth
30
PAR = 8.5 dB @ 0.01% Probability (CCDF)
−30
15
IRL
14
13
ACPR
−40
12
−50
ALT1
11
−60
2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700
−5
−10
−15
−20
−25
IRL, INPUT RETURN LOSS (dB)
18
ηD, DRAIN
EFFICIENCY (%)
34
ηD
ACPR (dBc), ALT1 (dBc)
19
f, FREQUENCY (MHz)
Figure 4. Single - Carrier W - CDMA Broadband Performance
@ Pout = 14 Watts Avg.
20
−15
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 1000 mA
Gps, POWER GAIN (dB)
19
18
750 mA
17
500 mA
16
250 mA
15
14
125 mA
13
12
VDD = 28 Vdc
f1 = 2598.75 MHz, f2 = 2601.25 MHz
Two−Tone Measurements
1
10
−20
VDD = 28 Vdc, f1 = 2598.75 MHz, f2 = 2601.25 MHz
Two−Tone Measurements
−25
IDQ = 125 mA
−30
−35
250 mA
750 mA
−40
−45
−50
500 mA
1000 mA
−55
100
0.5
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S27050HR3 MRF6S27050HSR3
RF Device Data
Freescale Semiconductor
5
−10
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 500 mA
f1 = 2598.75 MHz, f2 = 2601.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
−20
−30
−40
3rd Order
−50
−60
5th Order
7th Order
−70
1
10
−5
VDD = 28 Vdc, Pout = 50 W (PEP), IDQ = 500 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2600 MHz
−10
−15
−20
IM3−U
−25
IM3−L
−30
−35
IM5−L
−40
IM5−U
IM7−U
−50
−55
0.1
100
IM7−L
−45
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
54
P6dB = 47.88 dBm (61.38 W)
Ideal
Pout, OUTPUT POWER (dBm)
53
52
51
P3dB = 47.44 dBm (55.46 W)
50
P1dB = 46.91 dBm (49.06 W)
49
48
Actual
47
46
VDD = 28 Vdc, IDQ = 500 mA
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 2600 MHz
45
44
27
28
29
30
31
32
33
34
35
36
37
Pin, INPUT POWER (dBm)
50
−15
VDD = 28 Vdc, IDQ = 500 mA, f = 2600 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
45
40
−20
−25
35
ACPR −30
30
−35
25
−40
20
−45
Gps
−50
15
ACPR (dBc), ALT1 (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dBc)
Figure 9. Pulsed CW Output Power versus
Input Power
−55
10
ALT1
ηD
5
−60
0
−65
0.2
1
10
40
Pout, OUTPUT POWER (WATTS) AVG. W−CDMA
Figure 10. Single - Carrier W - CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
MRF6S27050HR3 MRF6S27050HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Gps
TC = −30_C
18
56
25_C
85_C 48
25_C
40
17
85_C
16
32
15
24
14
16
13
VDD = 28 Vdc
IDQ = 500 mA
f = 2600 MHz
ηD
12
0.1
1
IDQ = 500 mA
f = 2600 MHz
Gps, POWER GAIN (dB)
−30_C
0
VDD = 24 V
14
0.3
100
10
10
20
30
28 V
40
50
32 V
60
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
Figure 12. Power Gain versus Output Power
6
5
25
4
20
3
ηD
15
EVM
2
1
10
35
36
37
38
39
40
41
Pout, OUTPUT POWER (dBm)
Figure 13. Drain Efficiency and Error Vector
Magnitude versus Output Power
42
70
109
MTTF (HOURS)
VDD = 28 Vdc, IDQ = 500 mA
WiMAX, 802.16, 64 QAM 3/4, 4 Bursts
7 MHz Channel Bandwidth, f = 2600 MHz
34
15
Pout, OUTPUT POWER (WATTS) CW
35
30
16
8
EVM, ERROR VECTOR MAGNITUDE (%)
Gps, POWER GAIN (dB)
19
ηD, DRAIN EFFICIENCY (%)
17
64
ηD, DRAIN EFFICIENCY (%)
20
108
107
106
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 7 W Avg., and ηD = 22.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 14. MTTF Factor versus Junction Temperature
MRF6S27050HR3 MRF6S27050HSR3
RF Device Data
Freescale Semiconductor
7
W - CDMA TEST SIGNAL
100
−10
3.84 MHz
Channel BW
−20
10
1
−40
−50
0.1
(dB)
PROBABILITY (%)
−30
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset
PAR = 8.5 dB @ 0.01% Probability on CCDF
0.01
−60
−70
0.001
−80
0.0001
−90
0
2
4
6
8
10
PEAK−TO−AVERAGE (dB)
Figure 15. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single - Carrier Test Signal
−ACPR in 3.84 MHz
Integrated BW
−ACPR in 3.84 MHz
Integrated BW
−100
−110
−9
−7.2 −5.4 −3.6 −1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 16. Single - Carrier W - CDMA Spectrum
MRF6S27050HR3 MRF6S27050HSR3
8
RF Device Data
Freescale Semiconductor
Zsource
f = 2700 MHz
f = 2500 MHz
Zo = 25 Ω
f = 2500 MHz
Zload
f = 2700 MHz
VDD = 28 Vdc, IDQ = 500 mA, Pout = 7 W Avg.
f
MHz
Zsource
W
Zload
W
2500
6.897 + j6.212
11.524 - j6.193
2525
7.062 + j6.412
11.325 - j6.396
2550
7.239 + j6.611
11.110 - j6.594
2575
7.428 + j6.808
10.880 - j6.783
2600
7.630 + j7.002
10.634 - j6.962
2625
7.846 + j7.193
10.373 - j7.130
2650
8.075 + j7.380
10.098 - j7.283
2675
8.320 + j7.561
9.810 - j7.420
2700
8.579 + j7.737
9.511 - j7.541
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 17. Series Equivalent Source and Load Impedance
MRF6S27050HR3 MRF6S27050HSR3
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
B
G
2X
1
Q
bbb
M
T A
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
M
T A
B
M
M
M
bbb
N
R
(INSULATOR)
M
T A
B
M
M
M
ccc
M
T A
M
aaa
M
T A
M
ccc
H
(LID)
B
S
(LID)
M
T A
B
M
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
M
(INSULATOR)
B
M
C
F
E
A
T
A
SEATING
PLANE
(FLANGE)
CASE 465 - 06
ISSUE G
NI - 780
MRF6S27050HR3
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
4X U
(FLANGE)
4X Z
(LID)
B
1
K
2X
2
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
bbb
M
T A
M
B
M
N
ccc
M
R
(LID)
M
T A
M
B
M
ccc
M
T A
S
(INSULATOR)
bbb
M
T A
M
M
B
M
aaa
M
T A
M
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
F
T
SEATING
PLANE
(FLANGE)
CASE 465A - 06
ISSUE H
NI - 780S
MRF6S27050HSR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−− 0.040
−−− 0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MRF6S27050HR3 MRF6S27050HSR3
10
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Nov. 2006
• Initial Release of Data Sheet
1
Dec. 2008
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2
• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
• Replaced Fig. 14, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
MRF6S27050HR3 MRF6S27050HSR3
RF Device Data
Freescale Semiconductor
11
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MRF6S27050HR3 MRF6S27050HSR3
Document Number: MRF6S27050H
Rev. 1, 12/2008
12
RF Device Data
Freescale Semiconductor