Cypress CY7C1352G-250AXI 4-mbit (256kx18) pipelined sram with nobl architecture Datasheet

CY7C1352G
PRELIMINARY
4-Mbit (256Kx18) Pipelined SRAM
with NoBL™ Architecture
Functional Description[1]
Features
• Pin compatible and functionally equivalent to ZBT™
devices
• Internally self-timed output buffer control to eliminate
the need to use OE
• Byte Write capability
• 256K x 18 common I/O architecture
• Single 3.3V power supply
• 2.5V / 3.3V I/O Operation
The CY7C1352G is a 3.3V, 256K x 18 synchronous-pipelined
Burst SRAM designed specifically to support unlimited true
back-to-back Read/Write operations without the insertion of
wait states. The CY7C1352G is equipped with the advanced
No Bus Latency™ (NoBL™) logic required to enable consecutive Read/Write operations with data being transferred on
every clock cycle. This feature dramatically improves the
throughput of the SRAM, especially in systems that require
frequent Write/Read transitions.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. The
clock input is qualified by the Clock Enable (CEN) signal,
which, when deasserted, suspends operation and extends the
previous clock cycle. Maximum access delay from the clock
rise is 2.6 ns (250-MHz device).
• Fast clock-to-output times
• 2.6 ns (for 250-MHz device)
• 2.8 ns (for 200-MHz device)
• 3.5 ns (for 166-MHz device)
• 4.0 ns (for 133-MHz device)
• Clock Enable (CEN) pin to suspend operation
• Synchronous self-timed writes
• Asynchronous output enable (OE)
• Pb-Free 100 TQFP package
• Burst Capability—linear or interleaved burst order
• ZZ” Sleep Mode Option and Stop Clock option
Write operations are controlled by the two Byte Write Select
(BW[A:B]) and a Write Enable (WE) input. All writes are
conducted with on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE1, CE2, CE3) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tri-stated
during the data portion of a write sequence.
Logic Block Diagram
A0, A1, A
ADDRESS
REGISTER 0
A1
A1'
D1
Q1
A0
A0'
BURST
D0
Q0
LOGIC
MODE
CLK
CEN
ADV/LD
C
C
WRITE ADDRESS
REGISTER 1
WRITE ADDRESS
REGISTER 2
S
E
N
S
E
ADV/LD
BWA
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
MEMORY
ARRAY
WRITE
DRIVERS
A
M
P
S
BWB
WE
O
U
T
P
U
T
R
E
G
I
S
T
E
R
S
O
U
T
P
U
T
D
A
T
A
B
U
F
F
E
R
S
S
T
E
E
R
I
N
G
E
INPUT
REGISTER 1
OE
CE1
CE2
CE3
ZZ
E
DQs
DQPA
DQPB
E
INPUT
REGISTER 0
E
READ LOGIC
Sleep
Control
Notes:
1. For best–practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05514 Rev. *A
•
3901 North First Street
•
San Jose, CA 95134
•
408-943-2600
Revised November 10, 2004
CY7C1352G
PRELIMINARY
Selection Guide
250 MHz
2.6
325
40
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
200 MHz
2.8
265
40
166 MHz
3.5
240
40
133 MHz
4.0
225
40
Unit
ns
mA
mA
Shaded area contains advance information. Please contact your local Cypress sales representative for availability of these parts.
Pin Configuration
A
81
87
A
CEN
88
82
WE
89
NC
CLK
90
83
VSS
91
NC
VDD
92
84
CE3
93
OE
BWA
94
ADV/LD
BWB
95
85
NC
96
86
CE2
CE1
98
NC
A
97
A
99
NC
1
80
A
NC
2
79
NC
NC
3
78
NC
VDDQ
4
77
VDDQ
VSS
5
76
VSS
NC
NC
6
75
NC
7
74
DQB
DQPA
8
73
DQB
9
72
DQA
DQA
VSS
10
71
VDDQ
VSS
11
70
VDDQ
DQB
12
69
DQA
DQB
NC
13
68
DQA
14
67
VDD
NC
15
66
16
65
VSS
DQB
DQB
17
64
VDD
ZZ
18
63
DQA
19
62
VDDQ
DQA
20
61
VSS
VDDQ
21
60
VSS
DQB
22
59
CY7C1352G
VSS
NC
41
42
43
44
45
46
47
48
49
50
NC
NC
A
A
A
A
A
A
A
MODE
Document #: 38-05514 Rev. *A
40
NC
VSS
NC
51
VDD
52
30
39
29
38
NC
NC
NC
VDDQ
NC
NC
53
37
28
A0
54
A1
27
36
VSS
VDDQ
NC
35
55
A
26
34
NC
VSS
33
NC
56
A
57
25
A
58
24
32
23
DQPB
NC
A
DQB
DQA
DQA
31
BYTE B
100
100-Pin TQFP
BYTE A
Page 2 of 13
PRELIMINARY
CY7C1352G
Pin Definitions
Name
I/O
Description
A0, A1, A
InputSynchronous
Address Inputs used to select one of the 256K address locations. Sampled at the rising
edge of the CLK. A[1:0] are fed to the two-bit burst counter.
BW[A:B]
InputSynchronous
Byte Write Inputs, active LOW. Qualified with WE to conduct writes to the SRAM. Sampled
on the rising edge of CLK.
WE
InputSynchronous
Write Enable Input, active LOW. Sampled on the rising edge of CLK if CEN is active LOW.
This signal must be asserted LOW to initiate a write sequence.
ADV/LD
InputSynchronous
Advance/Load Input. Used to advance the on-chip address counter or load a new address.
When HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW,
a new address can be loaded into the device for an access. After being deselected, ADV/LD
should be driven LOW in order to load a new address.
CLK
Input-Clock
Clock Input. Used to capture all synchronous inputs to the device. CLK is qualified with CEN.
CLK is only recognized if CEN is active LOW.
CE1
InputSynchronous
Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction
with CE2 and CE3 to select/deselect the device.
CE2
InputSynchronous
Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction
with CE1 and CE3 to select/deselect the device.
CE3
InputSynchronous
Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction
with CE1 and CE2 to select/deselect the device.
OE
InputAsynchronous
Output Enable, asynchronous input, active LOW. Combined with the synchronous logic
block inside the device to control the direction of the I/O pins. When LOW, the DQ pins are
allowed to behave as outputs. When deasserted HIGH, DQ pins are tri-stated, and act as input
data pins. OE is masked during the data portion of a write sequence, during the first clock when
emerging from a deselected state, when the device has been deselected.
CEN
InputSynchronous
Clock Enable Input, active LOW. When asserted LOW the Clock signal is recognized by the
SRAM. When deasserted HIGH the Clock signal is masked. Since deasserting CEN does not
deselect the device, CEN can be used to extend the previous cycle when required.
ZZ
InputAsynchronous
ZZ “sleep” Input. This active HIGH input places the device in a non-time-critical “sleep”
condition with data integrity preserved. For normal operation, this pin has to be LOW or left
floating. ZZ pin has an internal pull-down.
DQs
I/OSynchronous
Bidirectional Data I/O Lines. As inputs, they feed into an on-chip data register that is triggered
by the rising edge of CLK. As outputs, they deliver the data contained in the memory location
specified by the address during the clock rise of the read cycle. The direction of the pins is
controlled by OE and the internal control logic. When OE is asserted LOW, the pins can behave
as outputs. When HIGH, DQs and DQP[A:B] are placed in a tri-state condition. The outputs are
automatically tri-stated during the data portion of a write sequence, during the first clock when
emerging from a deselected state, and when the device is deselected, regardless of the state
of OE.
DQP[A:B]
I/OSynchronous
Bidirectional Data Parity I/O Lines. Functionally, these signals are identical to DQs. During
write sequences, DQP[A:B] is controlled by BW[A:B] correspondingly.
MODE
VDD
VDDQ
VSS
Input Strap Pin Mode Input. Selects the burst order of the device.
When tied to Gnd selects linear burst sequence. When tied to VDD or left floating selects
interleaved burst sequence.
Power Supply
Power supply inputs to the core of the device.
I/O Power Supply Power supply for the I/O circuitry.
Ground
NC
Document #: 38-05514 Rev. *A
Ground for the device.
No Connects. Not internally connected to the die.
Page 3 of 13
PRELIMINARY
Functional Overview
The CY7C1352G is a synchronous-pipelined Burst SRAM
designed specifically to eliminate wait states during
Write/Read transitions. All synchronous inputs pass through
input registers controlled by the rising edge of the clock. The
clock signal is qualified with the Clock Enable input signal
(CEN). If CEN is HIGH, the clock signal is not recognized and
all internal states are maintained. All synchronous operations
are qualified with CEN. All data outputs pass through output
registers controlled by the rising edge of the clock. Maximum
access delay from the clock rise (tCO) is 2.6 ns (250-MHz
device).
Accesses can be initiated by asserting all three Chip Enables
(CE1, CE2, CE3) active at the rising edge of the clock. If Clock
Enable (CEN) is active LOW and ADV/LD is asserted LOW,
the address presented to the device will be latched. The
access can either be a read or write operation, depending on
the status of the Write Enable (WE). BW[A:B] can be used to
conduct byte write operations.
Write operations are qualified by the Write Enable (WE). All
writes are simplified with on-chip synchronous self-timed write
circuitry.
Three synchronous Chip Enables (CE1, CE2, CE3) and an
asynchronous Output Enable (OE) simplify depth expansion.
All operations (Reads, Writes, and Deselects) are pipelined.
ADV/LD should be driven LOW once the device has been
deselected in order to load a new address for the next
operation.
Single Read Accesses
A read access is initiated when the following conditions are
satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2,
and CE3 are ALL asserted active, (3) the Write Enable input
signal WE is deasserted HIGH, and (4) ADV/LD is asserted
LOW. The address presented to the address inputs is latched
into the Address Register and presented to the memory core
and control logic. The control logic determines that a read
access is in progress and allows the requested data to
propagate to the input of the output register. At the rising edge
of the next clock the requested data is allowed to propagate
through the output register and onto the data bus, provided OE
is active LOW. After the first clock of the read access the output
buffers are controlled by OE and the internal control logic. OE
must be driven LOW in order for the device to drive out the
requested data. During the second clock, a subsequent
operation (Read/Write/Deselect) can be initiated. Deselecting
the device is also pipelined. Therefore, when the SRAM is
deselected at clock rise by one of the chip enable signals, its
output will tri-state following the next clock rise.
Burst Read Accesses
The CY7C1352G has an on-chip burst counter that allows the
user the ability to supply a single address and conduct up to
four Reads without reasserting the address inputs. ADV/LD
must be driven LOW in order to load a new address into the
SRAM, as described in the Single Read Access section above.
The sequence of the burst counter is determined by the MODE
Document #: 38-05514 Rev. *A
CY7C1352G
input signal. A LOW input on MODE selects a linear burst
mode, a HIGH selects an interleaved burst sequence. Both
burst counters use A0 and A1 in the burst sequence, and will
wrap-around when incremented sufficiently. A HIGH input on
ADV/LD will increment the internal burst counter regardless of
the state of chip enables inputs or WE. WE is latched at the
beginning of a burst cycle. Therefore, the type of access (Read
or Write) is maintained throughout the burst sequence.
Single Write Accesses
Write accesses are initiated when the following conditions are
satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2,
and CE3 are ALL asserted active, and (3) the write signal WE
is asserted LOW. The address presented to the address inputs
is loaded into the Address Register. The write signals are
latched into the Control Logic block.
On the subsequent clock rise the data lines are automatically
tri-stated regardless of the state of the OE input signal. This
allows the external logic to present the data on DQs and
DQP[A:B]. In addition, the address for the subsequent access
(Read/Write/Deselect) is latched into the Address Register
(provided the appropriate control signals are asserted).
On the next clock rise the data presented to DQs and
DQP[A:B] (or a subset for byte write operations, see Write
Cycle Description table for details) inputs is latched into the
device and the write is complete.
The data written during the Write operation is controlled by
BW[A:B] signals. The CY7C1352G provides byte write
capability that is described in the Write Cycle Description table.
Asserting the Write Enable input (WE) with the selected Byte
Write Select (BW[A:B]) input will selectively write to only the
desired bytes. Bytes not selected during a byte write operation
will remain unaltered. A synchronous self-timed write
mechanism has been provided to simplify the write operations.
Byte write capability has been included in order to greatly
simplify Read/Modify/Write sequences, which can be reduced
to simple byte write operations.
Because the CY7C1352G is a common I/O device, data
should not be driven into the device while the outputs are
active. The Output Enable (OE) can be deasserted HIGH
before presenting data to the DQs and DQP[A:B] inputs. Doing
so will tri-state the output drivers. As a safety precaution, DQs
and DQP[A:B] are automatically tri-stated during the data
portion of a write cycle, regardless of the state of OE.
Burst Write Accesses
The CY7C1352G has an on-chip burst counter that allows the
user the ability to supply a single address and conduct up to
four Write operations without reasserting the address inputs.
ADV/LD must be driven LOW in order to load the initial
address, as described in the Single Write Access section
above. When ADV/LD is driven HIGH on the subsequent clock
rise, the chip enables (CE1, CE2, and CE3) and WE inputs are
ignored and the burst counter is incremented. The correct
BW[A:B] inputs must be driven in each cycle of the burst write
in order to write the correct bytes of data.
Page 4 of 13
CY7C1352G
PRELIMINARY
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ
places the SRAM in a power conservation “sleep” mode. Two
clock cycles are required to enter into or exit from this “sleep”
mode. While in this mode, data integrity is guaranteed.
Accesses pending when entering the “sleep” mode are not
considered valid nor is the completion of the operation
guaranteed. The device must be deselected prior to entering
the “sleep” mode. CE1, CE2, and CE3, must remain inactive for
the duration of tZZREC after the ZZ input returns LOW.
Interleaved Burst Address Table
(MODE = Floating or VDD)
First
Address
A1, A0
Second
Address
A1, A0
Third
Address
A1, A0
Fourth
Address
A1, A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Linear Burst Address Table (MODE = GND)
First
Address
A1, A0
Second
Address
A1, A0
Third
Address
A1, A0
Fourth
Address
A1, A0
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
Truth Table [2, 3, 4, 5, 6, 7, 8]
Operation
Address
Used
CE
ZZ
ADV/LD
WE
BWx
OE
CEN
CLK
None
H
L
L
X
X
X
L
L-H
Continue Deselect Cycle
None
X
L
H
X
X
X
L
L-H
tri-state
Read Cycle (Begin Burst)
External
L
L
L
H
X
L
L
L-H
Data Out (Q)
Read Cycle (Continue Burst)
Next
X
L
H
X
X
L
L
L-H
Data Out (Q)
NOP/Dummy Read (Begin Burst)
External
L
L
L
H
X
H
L
L-H
tri-state
Dummy Read (Continue Burst)
Next
X
L
H
X
X
H
L
L-H
tri-state
Write Cycle (Begin Burst)
External
L
L
L
L
L
X
L
L-H
Data In (D)
Write Cycle (Continue Burst)
Next
X
L
H
X
L
X
L
L-H
Data In (D)
NOP/WRITE ABORT (Begin Burst)
None
L
L
L
L
H
X
L
L-H
tri-state
Deselect Cycle
DQ
tri-state
WRITE ABORT (Continue Burst)
Next
X
L
H
X
H
X
L
L-H
tri-state
IGNORE CLOCK EDGE (Stall)
Current
X
L
X
X
X
X
H
L-H
–
SNOOZE MODE
None
X
H
X
X
X
X
X
X
tri-state
Notes:
2. X=”Don't Care.” H= Logic HIGH, L =Logic LOW. CE stands for ALL Chip Enables active. BWX = L signifies at least one Byte Write Select is active, BWX = Valid
signifies that the desired byte write selects are asserted, see Write Cycle Description table for details.
3. Write is defined by BW[A:B], and WE. See Write Cycle Descriptions table.
4. When a write cycle is detected, all I/Os are tri-stated, even during byte writes.
5. The DQ and DQP pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
6. CEN = H, inserts wait states.
7. Device will power-up deselected and the I/Os in a tri-state condition, regardless of OE.
8. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle DQs and DQP[A:B] = tri-state when OE
is inactive or when the device is deselected, and DQs and DQP[A:B] = data when OE is active.
Document #: 38-05514 Rev. *A
Page 5 of 13
CY7C1352G
PRELIMINARY
Truth Table for Read/Write [ 2, 3]
Function
WE
H
BWB
X
BWA
X
Write − No bytes written
L
H
H
Read
Write Byte A − (DQA and DQPA)
L
H
L
Write Byte B − (DQB and DQPB)
L
L
H
Write All Bytes
L
L
L
ZZ Mode Electrical Characteristics
Parameter
Description
Test Conditions
Min.
Max.
Unit
IDDZZ
Snooze mode standby current
ZZ > VDD − 0.2V
40
mA
tZZS
Device operation to ZZ
ZZ > VDD − 0.2V
2tCYC
ns
tZZREC
ZZ recovery time
ZZ < 0.2V
tZZI
ZZ active to snooze current
This parameter is sampled
tRZZI
ZZ inactive to exit snooze current
This parameter is sampled
Document #: 38-05514 Rev. *A
2tCYC
ns
2tCYC
0
ns
ns
Page 6 of 13
CY7C1352G
PRELIMINARY
Maximum Ratings
Current into Outputs (LOW)......................................... 20 mA
(Above which the useful life may be impaired. For user guidelines, not tested.)
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Storage Temperature ..................................... −65°C to +150°C
Latch-up Current.................................................... > 200 mA
Ambient Temperature with
Power Applied.................................................. −55°C to +125°C
Operating Range
Supply Voltage on VDD Relative to GND.........−0.5V to +4.6V
Range
DC Voltage Applied to Outputs
in tri-state ..................................................−0.5V to VDDQ + 0.5V
Ambient
Temperature (TA)
Com’l
Ind’l
DC Input Voltage ...................................... −0.5V to VDD + 0.5V
0°C to +70°C
–40°C to +85°C
VDD
VDDQ
3.3V – 5%/+10% 2.5V –5%
to VDD
Electrical Characteristics Over the Operating Range [9, 10]
Parameter
VDD
Description
Test Conditions
Min.
Max.
Unit
Power Supply Voltage
3.135
3.6
V
VDDQ
I/O Supply Voltage
2.375
VDD
V
VOH
Output HIGH Voltage
VOL
VIH
VIL
IX
Output LOW Voltage
Input HIGH
Voltage[9]
VDDQ = 3.3V, VDD = Min., IOH = –4.0 mA
2.4
V
VDDQ = 2.5V, VDD = Min., IOH = –1.0 mA
2.0
V
VDDQ = 3.3V, VDD = Min., IOL = 8.0 mA
0.4
V
VDDQ = 2.5V, VDD = Min., IOL = 1.0 mA
0.4
V
VDDQ = 3.3V
2.0
VDD + 0.3V
V
VDDQ = 2.5V
1.7
VDD + 0.3V
V
VDDQ = 3.3V
–0.3
0.8
V
VDDQ = 2.5V
–0.3
0.7
V
Input Load Current except ZZ GND ≤ VI ≤ VDDQ
and MODE
−5
5
µA
Input Current of MODE
−30
Input LOW
Voltage[9]
Input = VSS
Input = VDD
Input Current of ZZ
IOZ
Output Leakage Current
GND ≤ VI ≤ VDDQ, Output Disabled
IDD
VDD Operating Supply
Current
VDD = Max., IOUT = 0 mA,
f = fMAX = 1/tCYC
Automatic CE
Power-Down
Current—TTL Inputs
Automatic CE
Power-down
Current—CMOS Inputs
30
µA
5
µA
325
mA
5-ns cycle, 200 MHz
265
mA
6-ns cycle, 166 MHz
240
mA
7.5-ns cycle, 133
MHz
225
mA
120
mA
110
mA
100
mA
90
mA
40
mA
VDD = Max, Device Deselected, 4-ns cycle, 250 MHz
VIN ≥ VIH or VIN ≤ VIL
5-ns cycle, 200 MHz
f = fMAX = 1/tCYC
6-ns cycle, 166 MHz
VDD = Max, Device Deselected, All speeds
VIN ≤ 0.3V or VIN > VDDQ –
0.3V, f = 0
−5
µA
4-ns cycle, 250 MHz
7.5-ns cycle, 133
MHz
ISB2
µA
−5
Input = VSS
Input = VDD
ISB1
µA
5
Shaded areas contain advance information.
Notes:
9. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC)> -2V (Pulse width less than tCYC/2).
10. TPower-up: Assumes a linear ramp from 0V to VDD (min.) within 200ms. During this time VIH < VDD and VDDQ < VDD.
Document #: 38-05514 Rev. *A
Page 7 of 13
CY7C1352G
PRELIMINARY
Electrical Characteristics Over the Operating Range [9, 10] (continued)
Parameter
ISB3
Description
Test Conditions
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—TTL Inputs
ISB4
Max.
Unit
VDD = Max, Device Deselected, 4-ns cycle, 250 MHz
or VIN ≤ 0.3V or VIN > VDDQ – 5-ns cycle, 200 MHz
0.3V
6-ns cycle, 166 MHz
f = fMAX = 1/tCYC
7.5-ns cycle, 133
MHz
Min.
105
mA
95
mA
85
mA
75
mA
VDD = Max, Device Deselected, All speeds
VIN ≥ VIH or VIN ≤ VIL, f = 0
45
mA
Thermal Resistance[11]
Parameter
Description
ΘJA
Thermal Resistance
(Junction to Ambient)
ΘJC
Thermal Resistance
(Junction to Case)
Test Conditions
TQFP Package
Unit
Test conditions follow standard test methods and
procedures for measuring thermal impedance, per
EIA / JESD51.
TBD
°C/W
TBD
°C/W
Capacitance[11]
Parameter
Description
Test Conditions
CIN
Input Capacitance
CCLK
Clock Input Capacitance
CI/O
Input/Output Capacitance
Max.
TA = 25°C, f = 1 MHz,
VDD = 3.3V,
VDDQ = 3.3V
Unit
5
pF
5
pF
5
pF
AC Test Loads and Waveforms
3.3V I/O Test Load
ALL INPUT PULSES
VDDQ
OUTPUT
RL = 50Ω
Z0 = 50Ω
1ns
R = 317Ω
3.3V
OUTPUT
10%
90%
10%
90%
GND
5 pF
R = 351Ω
≤ 1 ns
≤ 1 ns
VT = 1.5V
INCLUDING
JIG AND
SCOPE
(a)
2.5V I/O Test Load
2.5V
OUTPUT
(c)
(b)
R = 1667Ω
VT = 1.25V
(a)
5 pF
INCLUDING
JIG AND
SCOPE
ALL INPUT PULSES
VDDQ
OUTPUT
RL = 50Ω
Z0 = 50Ω
10%
90%
10%
90%
GND
R =1538Ω
(b)
≤ 1 ns
≤ 1 ns
(c)
Note:
11. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05514 Rev. *A
Page 8 of 13
CY7C1352G
PRELIMINARY
Switching Characteristics Over the Operating Range [16, 17]
250 MHz
Parameter
tPOWER
Description
VDD (typical) to the first Access[12]
Min.
Max
200 MHz
Min.
Max
166 MHz
Min.
Max
133 MHz
Min.
Max
Unit
1
1
1
1
ms
Clock
tCYC
Clock Cycle Time
4.0
5.0
6.0
7.5
ns
tCH
Clock HIGH
1.7
2.0
2.5
3.0
ns
tCL
Clock LOW
1.7
2.0
2.5
3.0
ns
Output Times
tCO
Data Output Valid After CLK Rise
tDOH
Data Output Hold After CLK Rise
tCLZ
Clock to Low-Z[13, 14, 15]
tCHZ
Clock to
High-Z[13, 14, 15]
2.6
2.8
3.5
4.0
ns
tOEV
OE LOW to Output Valid
2.6
2.8
3.5
4.0
ns
4.0
ns
tOELZ
tOEHZ
OE LOW to Output
Low-Z[13, 14, 15]
OE HIGH to Output
High-Z[13, 14, 15]
2.6
2.8
3.5
4.0
ns
1.0
1.0
1.5
1.5
ns
0
0
0
0
ns
0
0
2.6
0
2.8
0
3.5
ns
Set-up Times
tAS
Address Set-up Before CLK Rise
1.2
1.2
1.5
1.5
ns
tALS
ADV/LD Set-up Before CLK Rise
1.2
1.2
1.5
1.5
ns
tWES
GW, BW[A:B] Set-Up Before CLK Rise
1.2
1.2
1.5
1.5
ns
tCENS
CEN Set-up Before CLK Rise
Data Input Set-up Before CLK Rise
1.2
1.2
1.5
1.5
ns
tDS
1.2
1.2
1.5
1.5
ns
tCES
Chip Enable Set-up Before CLK Rise
1.2
1.2
1.5
1.5
ns
Address Hold After CLK Rise
0.3
0.5
0.5
0.5
ns
ADV/LD Hold after CLK Rise
GW, BW[A:B] Hold After CLK Rise
0.3
0.5
0.5
0.5
ns
0.3
0.5
0.5
0.5
ns
0.5
0.5
0.5
ns
tDH
CEN Hold After CLK Rise
Data Input Hold After CLK Rise
0.3
0.3
0.5
0.5
0.5
ns
tCEH
Chip Enable Hold After CLK Rise
0.3
0.5
0.5
0.5
ns
Hold Times
tAH
tALH
tWEH
tCENH
Shaded areas contain advance information.
Notes:
12. This part has a voltage regulator internally; tpower is the time that the power needs to be supplied above VDD minimum initially before a read or write operation
can be initiated.
13. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.
14. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve tri-state prior to Low-Z under the same system conditions.
15. This parameter is sampled and not 100% tested.
16. Timing reference level is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V.
17. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
Document #: 38-05514 Rev. *A
Page 9 of 13
CY7C1352G
PRELIMINARY
Switching Waveforms
Read/Write Timing[18, 19, 20]
1
2
3
t CYC
4
5
6
A3
A4
7
8
9
A5
A6
A7
10
CLK
tCENS
tCENH
tCH
tCL
CEN
tCES
tCEH
CE
ADV/LD
WE
BW[A:B]
A1
ADDRESS
A2
tCO
tAS
tDS
tAH
Data
tDH
D(A1)
tCLZ
D(A2)
D(A2+1)
tDOH
Q(A3)
tOEV
Q(A4)
tCHZ
Q(A4+1)
D(A5)
Q(A6)
In-Out (DQ)
tOEHZ
tDOH
tOELZ
OE
WRITE
D(A1)
WRITE
D(A2)
BURST
WRITE
D(A2+1)
READ
Q(A3)
READ
Q(A4)
DON’T CARE
Document #: 38-05514 Rev. *A
BURST
READ
Q(A4+1)
WRITE
D(A5)
READ
Q(A6)
WRITE
D(A7)
DESELECT
UNDEFINED
Page 10 of 13
CY7C1352G
PRELIMINARY
Switching Waveforms (continued)
NOP, STALL, and DESELECT Cycles[18, 19, 21]
1
2
A1
A2
3
4
5
A3
A4
6
7
8
9
10
CLK
CEN
CE
ADV/LD
WE
BW[A:B]
ADDRESS
A5
tCHZ
D(A1)
Data
Q(A2)
D(A4)
Q(A3)
Q(A5)
In-Out (DQ)
WRITE
D(A1)
READ
Q(A2)
STALL
READ
Q(A3)
DON’T CARE
WRITE
D(A4)
STALL
NOP
READ
Q(A5)
DESELECT
CONTINUE
DESELECT
UNDEFINED
ZZ Mode Timing[22, 23]
CLK
t ZZ
ZZ
I
t
t ZZREC
ZZI
SUPPLY
I DDZZ
ALL INPUTS
t RZZI
DESELECT or READ Only
(except ZZ)
Notes:
18. For this waveform ZZ is tied low.
19. When CE is LOW: CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH: CE1 is HIGH or CE2 is LOW or CE3 is HIGH.
20. Order of the Burst sequence is determined by the status of the MODE (0= Linear, 1= Interleaved). Burst operations are optional.
21. The IGNORE CLOCK EDGE or STALL cycle (Clock 3) illustrated CEN being used to create a pause. A write is not performed during this cycle.
22. Device must be deselected when entering ZZ mode. See cycle description table for all possible signal conditions to deselect the device.
23. DQs are in high-Z when exiting ZZ sleep mode.
Document #: 38-05514 Rev. *A
Page 11 of 13
PRELIMINARY
CY7C1352G
Ordering Information
Speed
(MHz)
250
200
166
133
Package
Name
Ordering Code
Operating
Range
Package Type
CY7C1352G-250AXC
A101
Lead-Free 100-Lead Thin Quad Flat Pack(14 x 20 x 1.4mm)
Commercial
CY7C1352G-250AXI
A101
Lead-Free 100-Lead Thin Quad Flat Pack(14 x 20 x 1.4mm)
Industrial
CY7C1352G-200AXC
A101
Lead-Free 100-Lead Thin Quad Flat Pack(14 x 20 x 1.4mm)
Commercial
CY7C1352G-200AXI
A101
Lead-Free 100-Lead Thin Quad Flat Pack(14 x 20 x 1.4mm)
Industrial
CY7C1352G-166AXC
A101
Lead-Free 100-Lead Thin Quad Flat Pack(14 x 20 x 1.4mm)
Commercial
CY7C1352G-166AXI
A101
Lead-Free 100-Lead Thin Quad Flat Pack(14 x 20 x 1.4mm)
Industrial
CY7C1352G-133AXC
A101
Lead-Free 100-Lead Thin Quad Flat Pack(14 x 20 x 1.4mm)
Commercial
CY7C1352G-133AXI
A101
Lead-Free 100-Lead Thin Quad Flat Pack(14 x 20 x 1.4mm)
Industrial
Shaded areas contain advance information. Please contact your local cypress sales representative to order parts that are not listed in the ordering information table.
Package Diagram
100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) A101
51-85050-*A
51-85050-*A
ZBT is a trademark of Integrated Device Technology. NoBL and No Bus Latency are trademarks of Cypress Semiconductor
Corporation. All product and company names mentioned in this document are trademarks of their respective holders.
Document #: 38-05514 Rev. *A
Page 12 of 13
© Cypress Semiconductor Corporation, 2004. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
CY7C1352G
PRELIMINARY
Document History Page
Document Title: CY7C1352G 4-Mbit (256Kx18) Pipelined SRAM with NoBL™ Architecture
Document Number: 38-05514
REV.
ECN NO. Issue Date
Orig. of
Change
Description of Change
**
224362
See ECN
RKF
New data sheet
*A
288431
See ECN
VBL
Deleted 100 MHz and 225 MHz
Changed TQFP package in Ordering Information section to lead-free TQFP
Document #: 38-05514 Rev. *A
Page 13 of 13