Diodes MMDT3946 Complementary npn / pnp small signal surface mount transistor Datasheet

SPICE MODELS: MMDT3946
MMDT3946
Lead-free
COMPLEMENTARY NPN / PNP
SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
·
·
Complementary Pair
A
One 3904-Type NPN,
One 3906-Type PNP
C2
B1
SOT-363
E1
Epitaxial Planar Die Construction
B C
Ideal for Low Power Amplification and Switching
Ultra-Small Surface Mount Package
E2
Mechanical Data
K
·
·
J
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
·
·
·
·
Terminal Connections: See Diagram
M
D
C2
B1
F
L
E1
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
Marking (See Page 3): K46
E2
B2
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
C1
G
H
Lead Free/RoHS Compliant (Note 3)
·
·
·
B2
Dim
C1
F
0.30
0.40
H
1.80
2.20
J
¾
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
a
0°
8°
All Dimensions in mm
E1, B1, C1 = PNP3906 Section
E2, B2, C2 = NPN3904 Section
Ordering & Date Code Information: See Page 3
Weight: 0.006 grams (approximate)
Maximum Ratings, NPN 3904 Section
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
NPN 3904 Section
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current - Continuous (Note 1)
IC
200
mA
Power Dissipation (Note 1, 2)
Pd
200
mW
RqJA
625
°C/W
Thermal Resistance, Junction to Ambient (Note 1)
Maximum Ratings, PNP 3906 Section
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
PNP 3906 Section
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current - Continuous (Note 1)
IC
-200
mA
Power Dissipation (Note 1, 2)
Pd
200
mW
RqJA
625
°C/W
Thermal Resistance, Junction to Ambient (Note 1)
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
3. No purposefully added lead.
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Electrical Characteristics, NPN 3904 Section
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
60
¾
V
IC = 10mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
¾
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
5.0
6.0
V
IE = 10mA, IC = 0
ICEX
¾
50
nA
VCE = 30V, VEB(OFF) = 3.0V
IBL
¾
50
nA
VCE = 30V, VEB(OFF) = 3.0V
hFE
40
70
100
60
30
¾
¾
300
¾
¾
¾
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
0.20
0.30
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.65
¾
0.85
0.95
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Output Capacitance
Cobo
¾
4.0
pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
¾
8.0
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.0
10
kW
Voltage Feedback Ratio
hre
0.5
8.0
x 10-4
Small Signal Current Gain
hfe
100
400
¾
Output Admittance
hoe
1.0
40
mS
Current Gain-Bandwidth Product
fT
300
¾
MHz
VCE = 20V, IC = 20mA,
f = 100MHz
Noise Figure
NF
¾
5.0
dB
VCE = 5.0V, IC = 100mA,
RS = 1.0kW, f = 1.0kHz
Delay Time
td
¾
35
ns
Rise Time
tr
¾
35
ns
Storage Time
ts
¾
200
ns
Fall Time
tf
¾
50
ns
OFF CHARACTERISTICS (Note 4)
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
IC = 100µA, VCE =
IC = 1.0mA, VCE =
IC = 10mA, VCE =
IC = 50mA, VCE =
IC = 100mA, VCE =
1.0V
1.0V
1.0V
1.0V
1.0V
SMALL SIGNAL CHARACTERISTICS
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
SWITCHING CHARACTERISTICS
Note:
VCC = 3.0V, IC = 10mA,
VBE(off) = - 0.5V, IB1 = 1.0mA
VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA
4. Short duration pulse test used to minimize self-heating effect.
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Electrical Characteristics, PNP 3906 Section
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
-40
¾
V
IC = -10mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-40
¾
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
¾
V
IE = -10mA, IC = 0
ICEX
¾
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
IBL
¾
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
hFE
60
80
100
60
30
¾
¾
300
¾
¾
¾
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
-0.25
-0.40
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
-0.65
¾
-0.85
-0.95
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Output Capacitance
Cobo
¾
4.5
pF
VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
¾
10
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
2.0
12
kW
Voltage Feedback Ratio
hre
0.1
10
x 10-4
Small Signal Current Gain
hfe
100
400
¾
Output Admittance
hoe
3.0
60
mS
Current Gain-Bandwidth Product
fT
250
¾
MHz
VCE = -20V, IC = -10mA,
f = 100MHz
Noise Figure
NF
¾
4.0
dB
VCE = -5.0V, IC = -100mA,
RS = 1.0kW, f = 1.0kHz
Delay Time
td
¾
35
ns
Rise Time
tr
¾
35
ns
Storage Time
ts
¾
225
ns
Fall Time
tf
¾
75
ns
OFF CHARACTERISTICS (Note 4)
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
IC = -100µA, VCE =
IC = -1.0mA, VCE =
IC = -10mA, VCE =
IC = -50mA, VCE =
IC = -100mA, VCE =
-1.0V
-1.0V
-1.0V
-1.0V
-1.0V
SMALL SIGNAL CHARACTERISTICS
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
SWITCHING CHARACTERISTICS
Ordering Information
Notes:
VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
(Note 5)
Device
Packaging
Shipping
MMDT3946-7-F
SOT-363
3000/Tape & Reel
4. Short duration pulse test used to minimize self-heating effect.
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YM
K46 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K46
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
Code
J
K
L
M
N
P
R
S
T
U
V
W
X
Y
Z
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
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15
f = 1MHz
300
CIBO, INPUT CAPACITANCE (pF)
COBO, OUTPUT CAPACITANCE (pF)
PD, POWER DISSIPATION (mW)
350
Note 1
250
200
150
100
10
5
Cibo
50
Cobo
0
0.1
0
0
25
50
75
100
125
150
200
175
1
10
100
VCB, COLLECTOR-BASE VOLTAGE (V)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage (NPN-3904)
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature (Total Device)
1000
1
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
IC
IB = 10
TA = 125°C
100
TA = +25°C
TA = -25°C
10
0.1
VCE = 1.0V
0.01
1
1
0.1
10
100
0.1
1000
IC, COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs
Collector Current (NPN-3904)
10
1000
100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Typical Collector-Emitter
Saturation Voltage vs. Collector Current (NPN-3904)
100
10
IC
IB = 10
f = 1MHz
CIBO, INPUT CAPACITANCE (pF)
COBO, OUTPUT CAPACITANCE (pF)
VBE(SAT), BASE-EMITTER
SATURATION VOLTAGE (V)
1
1
0.1
0.1
Cibo
Cobo
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current (NPN-3904)
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1
0.1
1
100
10
VCB, COLLECTOR-BASE VOLTAGE (V)
Fig. 6, Input and Output Capacitance vs.
Collector-Base Voltage (PNP-3906)
MMDT3946
10
1000
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
IC
IB = 10
TA = 125°C
100
TA = +25°C
TA = -25°C
10
1
0.1
VCE = 1.0V
0.01
1
1
0.1
10
100
1
1000
IC, COLLECTOR CURRENT (mA)
Fig. 7, Typical DC Current Gain vs
Collector Current (PNP-3906)
10
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 8, Typical Collector-Emitter Saturation Voltage
vs. Collector Current (PNP-3906)
VBE(SAT), BASE-EMITTER
SATURATION VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
IC
IB = 10
0.5
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 9, Typical Base-Emitter
Saturation Voltage vs. Collector Current (PNP-3906)
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
President of Diodes Incorporated.
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MMDT3946
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