Spec. No. : C740I3 Issued Date : 2010.06.24 Revised Date : 2011.11.10 Page No. : 1/11 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN5N50I3 BVDSS : 500V RDS(ON) max. : 1.6Ω ID : 4.5A Description The MTN5N50I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Applications • Open Framed Power Supply • Adapter • STB Symbol Outline MTN5N50I3 G：Gate D：Drain S：Source MTN5N50I3 TO-251AB G D S TO-251AA G D S CYStek Product Specification Spec. No. : C740I3 Issued Date : 2010.06.24 Revised Date : 2011.11.10 Page No. : 2/11 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Total Power Dissipation (TA=25℃) Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature VDS VGS ID ID IDM EAS IAR EAR dv/dt 500 ±30 4.5 2.7 18 90 4.5 4.8 4.5 V V A A A mJ A mJ V/ns TL 300 °C 1.14 48 0.38 -55~+150 W W W/°C °C PD Tj, Tstg Note : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=4.5A, VDD=50V, L=8mH, RG=25Ω, starting TJ=+25℃. 3. ISD≤4.5A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max MTN5N50I3 Symbol Rth,j-c Rth,j-a Value 2.6 110 Unit °C/W °C/W CYStek Product Specification CYStech Electronics Corp. Spec. No. : C740I3 Issued Date : 2010.06.24 Revised Date : 2011.11.10 Page No. : 3/11 Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions 500 2.0 - 0.4 2 - 4.0 ±100 1 10 1.6 V V/°C V S nA μA μA Ω VGS=0, ID=250μA, Tj=25℃ Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =15V, ID=2.25A VGS=±30 VDS =500V, VGS =0 VDS =400V, VGS =0, TC=125°C VGS =10V, ID=2.25A 20 3.8 10.6 18 21 33 20 738 74 8 - nC ID=4.5A, VDD=400V, VGS=10V ns VDD=250V, ID=4.5A, VGS=10V, RG=25Ω pF VGS=0V, VDS=25V, f=1MHz 280 2 1.5 4.5 18 - V IS=4.5A, VGS=0V Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD *IS *ISM *trr *Qrr - A ns μC VGS=0, IF=4.5A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN5N50I3 MTN5N50I3 Package TO-251 (RoHS compliant) Shipping Marking 80 pcs / tube, 50 tubes / box 5N50 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C740I3 Issued Date : 2010.06.24 Revised Date : 2011.11.10 Page No. : 4/11 Typical Characteristics Static Drain-Source On-resistance vs Ambient Temperature Typical Output Characteristics 3.5 15V 10V 9V Drain Current - ID(A) 8 Static Drain-Source On-state Resistance-RDS(on) (Ω) 10 7V 6 4 6V 5.5V 2 3 2.5 2 1.5 1 0 -100 0 0 5 10 15 20 25 Drain-Source Voltage -VDS(V) 30 ID=2.25A, VGS=10V 0.5 5V VGS=4.5V 35 -50 200 10 2.5 VDS=30V Ta=25°C VGS=10V Drain Current-I D(on)(A) Static Drain-Source On-State Resistance-R DS(on)(Ω) 150 Drain Current vs Gate-Source Voltage Static Drain-Source On-State resistance vs Drain Current 2 1.5 8 6 VDS=10V 4 2 0 1 0.1 1 Drain Current-ID(A) 0 10 5 10 15 Gate-Source Voltage-VGS(V) 20 Forward Drain Current vs Source-Drain Voltage Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 15 Ta=25°C VGS=0V 12 Forward Current-I F(A) Static Drain-Source On-State Resistance-RDS(ON) (Ω) 0 50 100 Ambient Temperature-Ta(°C) 9 6 10 Ta=150°C Ta=25°C 1 ID=2.25A 3 0.1 0 0 MTN5N50I3 2 4 6 8 Gate-Source Voltage-VGS(V) 10 12 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Source Drain Voltage -VSD(V) CYStek Product Specification Spec. No. : C740I3 Issued Date : 2010.06.24 Revised Date : 2011.11.10 Page No. : 5/11 CYStech Electronics Corp. Typical Characteristics(Cont.) Brekdown Voltage vs Ambient Temperature Capacitance vs Reverse Voltage 10000 Drain-Source Breakdown Voltage BVDSS(V) 650 Ciss Capacitance-(pF) 1000 Coss 100 10 f=1MHz 5 550 500 ID=250μA, VGS=0V Crss 1 0 600 10 15 20 25 Drain-to-Source Voltage-VDS(V) 450 -100 30 -50 50 100 150 200 Gate Charge Characteristics Maximum Safe Operating Area 12 100 VDS=100V Gate-Source Voltage---VGS(V) 10μs Drain Current --- ID(A) 0 Ambient Temperature-Tj(°C) 100μs 1ms 10 10ms 1 100ms Operation in this area is limited by RDS(ON) DC 0.1 10 VDS=250V 8 VDS=400V 6 4 2 ID=4.5A 0 0.01 1 10 100 Drain-Source Voltage -VDS(V) 1000 0 4 8 12 16 20 Total Gate Charge---Qg(nC) Maximum Drain Current vs Case Temperature 5 Maximum Drain Current---I D(A) 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 25 50 75 100 125 150 175 Case Temperature---TC (°C) MTN5N50I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C740I3 Issued Date : 2010.06.24 Revised Date : 2011.11.10 Page No. : 6/11 Typical Characteristics(Cont.) Transient Thermal Response Curves 10 D=0.5 ZθJC(t), Thermal Response 1 0.2 0.1 1.ZθJC(t)=2.6 °C/W max. 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*ZθJC(t) 0.05 0.1 0.02 0.01 0.01 Single P l 0.001 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) MTN5N50I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C740I3 Issued Date : 2010.06.24 Revised Date : 2011.11.10 Page No. : 7/11 Test Circuit and Waveforms MTN5N50I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C740I3 Issued Date : 2010.06.24 Revised Date : 2011.11.10 Page No. : 8/11 Test Circuit and Waveforms(Cont.) MTN5N50I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C740I3 Issued Date : 2010.06.24 Revised Date : 2011.11.10 Page No. : 9/11 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN5N50I3 CYStek Product Specification Spec. No. : C740I3 Issued Date : 2010.06.24 Revised Date : 2011.11.10 Page No. : 10/11 CYStech Electronics Corp. TO-251AB Dimension Marking: Product Name Date Code CYS 5N50 □□□□ Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-251 Plastic Package CYStek Package Code: I3 Inches Min. Max. 0.2500 0.2618 0.2047 0.2126 0.5709 0.5866 0.0276 0.0354 0.0199 0.0276 0.0886 0.0925 0.0886 0.0925 0.0169 0.0228 DIM A B C D E F G H Millimeters Min. Max. 6.35 6.65 5.20 5.40 14.50 14.90 0.70 0.90 0.50 0.70 2.25 2.35 2.25 2.35 0.43 0.58 DIM I J K L M N S T Inches Min. Max. 0.0866 0.0945 0.2126 0.2244 0.2992 0.3071 0.0453 0.0492 0.0169 0.0228 0.1181 REF 0.1969 REF 0.1496 REF Millimeters Min. Max. 2.20 2.40 5.40 5.70 7.60 7.80 1.15 1.25 0.43 0.58 3.00 REF 5.00 REF 3.80 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. MTN5N50I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C740I3 Issued Date : 2010.06.24 Revised Date : 2011.11.10 Page No. : 11/11 TO-251AA Dimension Marking : Device Name Date Code 3-Lead TO-251AA Plastic Package CYStek Package Code: I3 Style : Pin 1. Gate 2. Drain 3. Source *: Typical Inches Min. Max. 0.2559 0.2638 0.2020 0.2126 0.4094 0.4331 0.0280 0.0319 0.0858 0.0941 0.0858 0.0941 0.0181 0.0220 0.0902 0.0937 DIM A B C E F G H I Millimeters Min. Max. 6.50 6.70 5.13 5.46 10.40 11.00 0.71 0.81 2.18 2.39 2.18 2.39 0.46 0.56 2.29 2.38 DIM J K L M S T U V Inches Min. Max. 0.2362 0.2441 0.1299 0.1457 0.0358 0.0437 0.0181 0.0220 0.1902 REF 0.2106 REF 0.0701 REF 0.0299 REF Millimeters Min. Max. 6.00 6.20 3.30 3.70 0.91 1.11 0.46 0.56 4.83 REF 5.35 REF 1.78 REF 0.76 REF Notes: 1.Controlling dimension: inch. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN5N50I3 CYStek Product Specification