TGS MCR100-8 Sot-89 plastic-encapsulate transistors (sot-89) Datasheet

TIGER ELECTRONIC CO.,LTD
SOT-89 Plastic-Encapsulate Transistors
MCK 100- 6,- 8
SOT-89
Silicon
Planar PNPN
Thyristor
FEATURES
1.KATHODE
Current-IGT : 200 μA
ITRMS :
2.ANODE
0.8 A
3.GATE
VDRM :
MCK100-6:400 V
MCK100-8:600 V
Operating and storage junction temperature range
TJ,Tstg : -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
Symbol
unless
otherwise
Test
specified)
conditions
MIN
MAX
UNIT
*
VTM
ITM=1A
1.7
V
Gate trigger voltage
VGT
VAK=7V
0.8
V
On state voltage
Peak Repetitive forward and reverse
VDRM
blocking voltage
IDRM= 10 μA ,VMAX=1010 V
AND
MCK100-6
Peak forward or reverse blocking
IDRM
VAK= Rated
Current
IRRM
VDRM or VRRM
IH
IHL= 20 mA , Av =
Holding current
Gate trigger current
V
600
VRRM
MCK100-8
400
7V
10
µA
5
mA
A2
5
15
µA
A1
15
30
µA
A
30
80
µA
B
80
200
µA
VAK=7V
IGT
* Forward current applied for 1 ms maximum duration,duty cycle≤1%。
Typical Characteristics
MCK100-6,-8
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