PHILIPS BLV2045N Uhf power transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D171
BLV2045N
UHF power transistor
Preliminary specification
Supersedes data of 1999 May 01
2000 Feb 21
Philips Semiconductors
Preliminary specification
UHF power transistor
BLV2045N
FEATURES
PINNING - SOT390A
• Emitter ballasting resistors for optimum temperature
profile
PIN
• Gold metallization ensures excellent reliability
• Internal input and output matching for an easy design of
wideband circuits.
APPLICATIONS
SYMBOL
DESCRIPTION
1
c
collector
2
b
base
3
e
emitter, connected to flange
handbook, halfpage
1
• Common emitter class-AB operation in PCN and PCS
applications in the 1800 to 2000 MHz frequency range.
3
DESCRIPTION
2
NPN silicon planar UHF power transistor in a 2-lead
SOT390A flange package with a ceramic cap. The emitter
is connected to the flange.
Top view
MSA470
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter test circuit.
MODE OF
OPERATION
PL
(W)
Gp
(dB)
ηC
(%)
26
35
typ. 9.5
typ. 43
−
26
35 (PEP)
≥9.5
≥33
≤−30
f
(MHz)
VCE
(V)
CW, class-AB
1990
2-tone, class-AB
f1 = 1990.0; f2 = 1990.1
dim
(dBc)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
65
V
VCEO
collector-emitter voltage
open base
−
27
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
4
A
IC(AV)
average collector current
−
4
A
Ptot
total power dissipation
−
125
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
200
°C
Tmb = 25 °C
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
2000 Feb 21
2
Philips Semiconductors
Preliminary specification
UHF power transistor
BLV2045N
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-mb
thermal resistance from junction to
mounting base
Rth mb-h
thermal resistance from mounting
base to heatsink
CONDITIONS
PL = 35 W; ηC = 40%; Tmb = 25 °C
VALUE
UNIT
1.4
K/W
0.4
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
65
−
−
V
V(BR)CEO
collector-emitter breakdown voltage open base; IC = 60 mA
27
−
−
V
V(BR)EBO
emitter-base breakdown voltage
3
−
−
V
mA
open emitter; IC = 20 mA
open collector; IE = 40 mA
ICES
collector leakage current
VCE = 26 V; VBE = 0
−
−
4
hFE
DC current gain
VCE = 10 V; IC = 2 A
45
−
100
Cc
collector capacitance
VCB = 26 V; IE = ie = 0;
f = 1 MHz; note 1
−
t.b.f.
−
pF
Cre
feedback capacitance
VCE = 26 V; IC = 0;
f = 1 MHz
−
t.b.f.
−
pF
Note
1. Capacitance of die only.
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common emitter test circuit.
MODE OF
OPERATION
f
(MHz)
VCE
(V)
ICQ
(mA)
PL
(W)
Gp
(dB)
ηC
(%)
dim
(dBc)
CW, class-AB
1990
26
150
35
typ. 9.5
typ. 43
−
2-tone, class-AB
f1 = 1990.0; f2 = 1990.1
26
150
35 (PEP)
≥9.5
typ. 10.2
≥33
typ. 35
≤−30
typ. −32
Ruggedness in class-AB operation
The BLV2045N is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 through all phases under the
following conditions: f1 = 1990.0 MHz; f2 = 1990.1 MHz; VCE = 26 V; ICQ = 150 mA; PL = 35 W (PEP); Tmb = 25 °C.
2000 Feb 21
3
Philips Semiconductors
Preliminary specification
UHF power transistor
BLV2045N
MCD881
12
handbook, halfpage
Gp
60
ηC
(%)
50
Gp
(dB)
ηC
Gp
60
ηC
(%)
50
Gp
(dB)
40
8
MCD882
12
handbook, halfpage
40
8
30
30
ηC
20
4
20
4
10
10
0
0
0
10
20
30
PL (W)
0
0
40
0
10
20
30
40
PL (PEP) (W)
VCE = 26 V; ICQ = 150 mA; f1 = 1990 MHz; f2 = 1990.1 MHz
VCE = 26 V; ICQ = 150 mA; f = 1990 MHz.
Fig.3
Fig.2
Power gain and collector efficiency as
functions of load power; typical values.
MCD883
0
handbook, halfpage
dim
(dBc)
−20
d3
d5
−40
−60
0
10
20
30
40
PL (PEP) (W)
VCE = 26 V; ICQ = 150 mA; f1 = 1990 MHz; f2 = 1990.1 MHz.
Fig.4
Intermodulation distortion as a function of
peak envelope load power; typical values.
2000 Feb 21
4
Power gain and collector efficiency as
functions of peak envelope load power;
typical values.
Philips Semiconductors
Preliminary specification
UHF power transistor
BLV2045N
R1
handbook, full pagewidth
C8
L13
L7
Vbb
VCC
C9
C10
C11
C14
C13
C15
C16
L12
C12
L9
L6
L4
L2
L1
50 Ω
input
C2
L8
L5
L11
L3
L10
C7
C1
C3
C6
C4
C5
MCD884
Dimensions in mm.
The components are situated on one side of the copper-clad board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.5 Class-AB test circuit for 1990 MHz.
2000 Feb 21
5
50 Ω
output
Philips Semiconductors
Preliminary specification
UHF power transistor
BLV2045N
List of components (see Figs 5 and 6)
COMPONENT
DESCRIPTION
VALUE
C1
C2, C7
C3
Tekelec variable capacitor; type AT37281
multilayer ceramic chip capacitor; note1
multilayer ceramic chip capacitor; note 2
0.4 to 2.5 pF
30 pF
2.4 pF
C4
C5
C6
multilayer ceramic chip capacitor; note 2
Tekelec variable capacitor; type AT37271
multilayer ceramic chip capacitor; note 2
1.8 pF
0.6 to 4.5 pF
1.3 pF
C8, C14
C9, C10, C11,
C15, C16
tantalum SMD capacitor
multilayer ceramic chip capacitor
35 V; 10 µF
100 nF
C12, C13
L1
L2
L3
L4
L5
L6
multilayer ceramic chip capacitor; note 2
stripline; note 3
stripline; note 3
stripline; note 3
stripline; note 3
stripline; note 3
5 turns enamelled 1 mm copper wire
20 pF
50 Ω
20.5 Ω
29.8 Ω
11 Ω
13.2 Ω
L7
L8
L9
L10
L11
L12
EMI filter; type NFM61RH20T332
stripline; note 3
stripline; note 3
stripline; note 3
stripline; note 3
2 turns enamelled 1 mm copper wire
3300 pF
11.5 Ω
6.9 Ω
35.8 Ω
14.4 Ω
L13
R1
EMI filter; type NFM60RH20T152
chip resistor
1500 pF
2.2 Ω
DIMENSIONS
8 x 1 mm
2.5 x 3.5 mm
5.6 x 2.1 mm
2.0 x 7.4 mm
7.2 x 6.0 mm
int. dia. = 3.3 mm;
length = 6 mm
6.6 x 7.1 mm
6.4 x 12.6 mm
9.9 x 1.6 mm
2.7 x 5.4 mm
int. dia. = 3.3 mm;
length = 2.5 mm
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 100B or capacitor of same quality.
3. The striplines are on a double copper-clad printed-circuit board: εr = 6.15; thickness 0.64mm.
2000 Feb 21
6
Philips Semiconductors
Preliminary specification
UHF power transistor
BLV2045N
30
handbook, full pagewidth
30
40
PH98058-inp
PH98058-out
VC
Vb
C10
C16
C11
C9
C15
L6
R1
L12
C13
C12
C8
C14
L5
C4
L11
C3
C7
C1
C6
C2
C5
PH98058-inp
PH98058-out
MCD885
Dimensions in mm.
The components are situated on one side of the copper-clad board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.6 Printed-circuit board and component layout for class-AB broadband test circuit.
2000 Feb 21
7
Philips Semiconductors
Preliminary specification
UHF power transistor
BLV2045N
MCD886
4
MCD887
6
handbook, halfpage
handbook, halfpage
Zi
(Ω)
ZL
(Ω)
ri
3
4
ZL
2
2
xi
1
0
0
1800
1850
1900
−2
1800
2000
1950
XL
1850
1900
2000
1950
f (MHz)
f (MHz)
VCE = 26 V; ICQ = 150 mA; PL = 35 W; Tmb = 25 °C.
VCE = 26 V; ICQ = 150 mA; PL = 35 W; Tmb = 25 °C.
Fig.7
Fig.8
Input impedance as a function of frequency
(series components); typical values.
MCD888
12
handbook, halfpage
60
ηC
(%)
50
Gp
Gp
Load impedance as a function of frequency
(series components); typical values.
(dB)
ηC
40
8
30
dbook, halfpage
20
4
10
Zi
ZL
0
1800
1850
1900
MBA451
0
2000
1950
f (MHz)
VCE = 26 V; ICQ = 150 mA; PL = 35 W; Tmb = 25 °C.
Fig.9
Power gain and collector efficiency as
functions of frequency; typical values.
2000 Feb 21
Fig.10 Definition of transistor impedance.
8
Philips Semiconductors
Preliminary specification
UHF power transistor
BLV2045N
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 2 leads
SOT390A
D
A
F
3
D1
U1
B
q
C
c
1
L
U2
E
E1
A
L
w1 M A M B M
p
2
w2 M C M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
E
E1
F
L
p
Q
q
U1
U2
w1
w2
mm
5.03
4.22
5.72
5.46
0.16
0.10
8.18
8.08
8.26
8.00
6.40
6.30
6.43
6.17
1.66
1.39
6.10
5.33
3.43
3.17
2.32
2.00
14.22
19.03
18.77
6.43
6.17
0.25
0.51
0.198 0.225 0.006
0.166 0.215 0.004
0.322
0.318
0.325 0.252 0.253 0.065
0.315 0.248 0.243 0.055
0.24
0.21
0.135 0.091
0.560
0.125 0.079
0.749
0.739
0.253
0.010 0.020
0.243
inches
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
SOT390A
2000 Feb 21
EUROPEAN
PROJECTION
ISSUE DATE
99-03-29
9
Philips Semiconductors
Preliminary specification
UHF power transistor
BLV2045N
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
2000 Feb 21
10
Philips Semiconductors
Preliminary specification
UHF power transistor
BLV2045N
NOTES
2000 Feb 21
11
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SCA 69
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603516/08/pp12
Date of release: 2000
Feb 21
Document order number:
9397 750 06763