HGTP10N40F1D, HGTP10N50F1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • Latch Free Operation EMITTER • Typical Fall Time < 1.4µs COLLECTOR GATE • High Input Impedance • Low Conduction Loss COLLECTOR (FLANGE) • Anti-Parallel Diode • tRR < 60ns Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic. Terminal Diagram N-CHANNEL ENHANCEMENT MODE C IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. G E PACKAGING AVAILABILITY PART NUMBER PACKAGE BRAND HGTP10N40F1D TO-220AB 10N40F1D HGTP10N50F1D TO-220AB 10N50F1D NOTE: When ordering, use the entire part number Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCGR Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . IC25 at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . IC90 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Diode Forward Current at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF25 at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF90 Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL NOTE: HGTP10N40F1D 400 400 12 10 12 ±20 16 10 75 0.6 -55 to +150 260 HGTP10N50F1D 500 500 12 10 12 ±20 16 10 75 0.6 -55 to +150 260 UNITS V V A A A V A A W W/oC oC oC 1. TJ = +150oC, Min. RGE = 25Ω without latch. INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 3-25 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 File Number 2751.2 Specifications HGTP10N40F1D, HGTP10N50F1D Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS HGTP10N40F1D PARAMETERS SYMBOL TEST CONDITIONS MAX MIN MAX UNITS - 500 - V Collector-Emitter Breakdown Voltage BVCES IC = 1.25mA, VGE = 0V 400 Gate Threshold Voltage VGE(TH) VGE = VCE, IC = 1mA Zero Gate Voltage Collector Current ICES Gate-Emitter Leakage Current Collector-Emitter On-Voltage IGES VCE(ON) HGTP10N50F1D MIN 2.0 4.5 2.0 4.5 V TJ = +150oC, VCE = 400V - 1.25 - - mA TJ = +150oC, VCE = 500V - - - 1.25 mA VGE = ±20V, VCE = 0V - 100 - 100 nA TJ = +150oC, IC = 5A, VGE = 10V - 2.5 - 2.5 V TJ = +150oC, - 2.2 - 2.2 V TJ = +25oC, IC = 5A, VGE = 10V IC = 5A, VGE = 15V - 2.5 - 2.5 V TJ = +25oC, IC = 5A, VGE = 15V - 2.2 - 2.2 V VGEP IC = 5A, VCE = 10V 5.3 (Typ) V On-State Gate Charge QG(ON) IC = 5A, VCE = 10V 13.4 (Typ) nC Turn-On Delay Time tD(ON) Resistive Load, IC = 5A, VCE = 400V, RL = 80Ω, TJ = +150oC, VGE = 10V, RG = 25Ω Gate-Emitter Plateau Voltage Rise Time tRI Turn-Off Delay Time Turn-Off Energy Loss Per Cycle (Off Switching Dissipation = WOFF x Frequency) Turn-Off Delay Time 130 (Typ) ns 1400 (Typ) ns WOFF 0.64 (Typ) mJ tD(OFF)I Fall Time ns ns tFI tD(OFF) Fall Time 45 (Typ) 35 (Typ) tFI Inductive Load (See Figure 13), IC = 5A, VCE(CLP) = 400V, RL = 80Ω, L = 50µH, TJ = +150oC, VGE = 10V, RG = 25Ω - 375 - 375 ns - 1200 - 1200 ns - 1.2 - 1.2 mJ Turn-Off Energy Loss Per Cycle (Off Switching Dissipation = WOFF x Frequency) WOFF Thermal Resistance Junction-toCase (IGBT) RθJC - 1.67 - 1.67 Thermal Resistance of Diode RθJC - 2.0 - 2.0 oC/W Diode Forward Voltage VEC IEC = 10A - 1.7 - 1.7 V Diode Reverse Recovery Time tRR IEC = 10A, dIEC/dt = 100A/µs - 60 - 60 ns o C/W Typical Performance Curves 10 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) PULSE TEST, VCE = 10V PULSE DURATION = 250µs DUTY CYCLE < 2% TC = -55oC 8 6 4 TC = -55oC TC = +25oC 2 TC = +150oC VGE = 15V 10 12 8 VGE = 6.0V VGE = 10V PULSE DURATION = 250µs DUTY CYCLE < 0.5% TC = +25oC 6 VGE = 5.5V VGE = 5.0V 4 VGE = 4.5V 2 VGE = 4.0V 0 0 0 2 4 6 8 0 10 2 4 6 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE , GATE-TO-EMITTER VOLTAGE (V) FIGURE 1. TYPICAL TRANSFER CHARACTERISTICS FIGURE 2. TYPICAL SATURATION CHARACTERISTICS 3-26 10 HGTP10N40F1D, HGTP10N50F1D Typical Performance Curves (Continued) 18 o TJ = +150 C 3 ICE, DC COLLECTOR CURRENT (A) VCE(ON), SATURATION VOLTAGE (V) 4 VGE = 10V 2 VGE = 15V 1 16 VGE = 15V 14 12 10 VGE = 10V 8 6 4 2 0 0 1 10 +25 100 FIGURE 3. SATURATION VOLTAGE vs COLLECTOR-EMITTER CURRENT (TYPICAL) 0.5 tD(OFF)I , TURN-OFF DELAY (µs) C, CAPACITANCE (pF) +125 +150 L = 50µH 800 600 CISS 400 200 COSS CRSS 0.4 0.3 VGE = 15V, RG = 50Ω 0.2 VGE = 10V, RG = 50Ω VGE = 15V, RG = 25Ω VGE = 10V, RG = 25Ω 0.1 0.0 5 10 15 20 25 1 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 10 ICE, COLLECTOR-EMITTER CURRENT (A) FIGURE 5. CAPACITANCE vs COLLECTOR-TO-EMITTER VOLTAGE (TYPICAL) FIGURE 6. TURN-OFF DELAY vs COLLECTOR-TO-EMITTER CURRENT (TYPICAL) 2 WOFF , TURN-OFF SWITCHING LOSS (mJ) 10 TJ = +150oC, VGE = 10V RG = 25Ω, L = 50µH tFI, FALL TIME (µs) +100 TJ +150oC, VCE = 400V f = 1MHz 0 +75 FIGURE 4. DC COLLECTOR CURRENT vs CASE TEMPERATURE 1000 0 +50 TC , CASE TEMPERATURE (oC) ICE, COLLECTOR-EMITTER CURRENT (A) 1 VCE = 400V 0 TJ = +150oC, VGE = 10V RG = 25Ω, L = 50µH VCE = 400V 1.0 VCE = 200V 0.1 1 10 100 1 10 100 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) FIGURE 7. FALL TIME vs COLLECTOR-TO-EMITTER CURRENT (TYPICAL) 3-27 FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOREMITTER CURRENT (TYPICAL) HGTP10N40F1D, HGTP10N50F1D TJ = +150oC, TC = +100oC, VGE = 10V RG = 25Ω, PT = 75W, L = 50µH VCE = 200V 100 fMAX1 = 0.05/tD(OFF)I fMAX2 = (PD - PC)/WOFF VCE = 400V 10 1 1 10 100 ICE, COLLECTOR-EMITTER CURRENT (A) NOTE: PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION 500 RL = 100Ω IG(REF) = 0.33mA GATEEMITTER VOLTAGE VGE = 10V VCC = BVCES 375 VCC = BVCES 250 5 0.75 BVCES 0.75 BVCES 125 0.50 BVCES 0.50 BVCES 0.25 BVCES 0.25 BVCES COLLECTOR-EMITTER VOLTAGE 0 0 IG(REF) 20 FIGURE 9. MAXIMUM OPERATING FREQUENCY vs COLLECTOR CURRENT AND VOLTAGE (TYPICAL) IG(REF) 80 TIME (µs) IG(ACT) IG(ACT) FIGURE 10. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT tRR, REVERSE RECOVERY TIME (ns) IEC , EMITTER-COLLECTOR CURRENT (A) 100 TJ = +150oC TJ = +100oC 10 1.0 TJ = +25oC TJ = -50oC 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 dIEC/dt ≥ 100A/µs VR = 30V, TJ = +25oC 60 50 40 30 20 10 2.0 0 2 4 6 8 10 12 14 16 IEC , EMITTER-COLLECTOR CURRENT (A) VEC , EMITTER-COLLECTOR VOLTAGE (V) FIGURE 11. TYPICAL FORWARD VOLTAGE FIGURE 12. TYPICAL REVERSE RECOVERY TIME Test Circuit RL L = 50µH 1/RG = 1/RGEN + 1/RGE VCC 400V RGEN = 50Ω 20V 0V RGE = 50Ω FIGURE 13. INDUCTIVE SWITCHING TEST CIRCUIT 3-28 10 + - VGE, GATE-EMITTER VOLTAGE (V) 1000 VCE, COLLECTOR-EMITTER VOLTAGE (V) fOP , MAXIMUM OPERATING FREQUENCY (KHz) Typical Performance Curves (Continued) HGTP10N40F1D, HGTP10N50F1D All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. 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