EC733626 30V,6.9A,N-Channel MOSFET Description The EC733626 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Features and Benefits: SSF3626 ◆ VDS = 30V,ID =6.9A RDS(ON) < 51mΩ @ VGS=4.5V RDS(ON) < 35mΩ @ VGS=10V ◆ High Power and current handing capability ◆ Lead free product is acquired ◆ Surface Mount Package Application ◆ PWM applications ◆ Load switch ◆ Power management Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V ID(25℃) 6.9 A ID(70℃) 5.5 A IDM 30 A PD 2.8 W TJ,TSTG -55 To 150 ℃ Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance E-CMOS Corp. (www.ecmos.com.tw) Page 1 of 4 4J01N-Rev.F002 EC733626 30V,6.9A,N-Channel MOSFET Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 30 Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 3 V Drain-Source On-State Resistance RDS(ON) OFF CHARACTERISTICS V ON CHARACTERISTICS (Note 3) Forward Transconductance gFS 1.5 VGS=4.5V, ID=4.9A 41 51 mΩ VGS=10V, ID=5.9A 25 35 mΩ VDS=10V,ID=5.9A 5 S 550 PF 100 PF DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=15V,VGS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 50 PF Turn-on Delay Time td(on) 5 nS Turn-on Rise Time tr VDS=15V,VGS=10V,RGEN=3..2Ω 25 nS td(off) ID=4.7A 12 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf 10 nS Total Gate Charge Qg 9 nC Gate-Source Charge Qgs 1.8 nC Gate-Drain Charge Qgd 1.7 nC Body Diode Reverse Recovery Time Trr 20 nS Body Diode Reverse Recovery Charge Qrr 12 nC VDS=15V,ID=5.9A,VGS=10V IF=4.7A, dI/dt=100A/µs DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=4.7A 1 1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2 2. Surface Mounted on 1in FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. E-CMOS Corp. (www.ecmos.com.tw) Page 2 of 4 4J01N-Rev.F002 EC733626 30V,6.9A,N-Channel MOSFET Typical electrical and thermal characteristics Ordering and Marking Information EC733626 XX X R：Tape & Reel M1＝SOP 8L E-CMOS Corp. (www.ecmos.com.tw) Part Number Package Marking EC733626M1R SOP 8L SSF3626 Page 3 of 4 4J01N-Rev.F002 30V,6.9A,N-Channel MOSFET EC733626 SOP 8L Package Outline Dimension E-CMOS Corp. (www.ecmos.com.tw) Page 4 of 4 4J01N-Rev.F002