MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC2020/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc... RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip design makes it usable from 1600 to 2400 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and W - CDMA. Final Application Typical Two - Tone Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, Pout = 20 Watts PEP, Full Frequency Band Power Gain — 29 dB IMD — - 32 dBc Drain Efficiency — 26% (at 1805 MHz) and 20% (at 1990 MHz) Driver Applications Typical GSM EDGE Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA, Pout = 5 Watts Avg., Full Frequency Band Power Gain — 29 dB Spectral Regrowth @ 400 kHz Offset = - 66 dBc Spectral Regrowth @ 600 kHz Offset = - 77 dBc EVM — 1% rms Typical CDMA Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 240 mA, IDQ3 = 250 mA, Pout = 1 Watt Avg., Full Frequency Band, IS - 97 Pilot, Sync, Paging, Traffic Codes 8 through 13 Power Gain — 30 dB ACPR @ 885 kHz Offset = - 61 dBc @ 30 kHz Bandwidth ALT1 @ 1.25 MHz Offset = - 69 dBc @ 12.5 kHz Bandwidth ALT2 @ 2.25 MHz Offset = - 59 dBc @ 1 MHz Bandwidth • Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 8 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) • Integrated Temperature Compensation with Enable/Disable Function • On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) • Integrated ESD Protection • Also Available in Gull Wing for Surface Mount • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel MW4IC2020MBR1 MW4IC2020GMBR1 1805 - 1990 MHz, 20 W, 26 V GSM/GSM EDGE, CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW4IC2020MBR1 CASE 1329A - 03 TO - 272 WB - 16 GULL PLASTIC MW4IC2020GMBR1 PIN CONNECTIONS VRD1 VRG1 VDS2 VDS1 3 Stages IC RFin VGS1 VGS2 VGS3 GND VDS2 VRD1 VRG1 VDS1 1 2 3 4 5 16 15 RFin 6 14 VDS3/ RFout VGS1 VGS2 VGS3 GND 7 8 9 10 11 13 12 GND VDS3/RFout Quiescent Current Temperature Compensation GND (Top View) NOTE: Exposed backside flag is source Functional Block Diagram terminal for transistors. (1) Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1987. REV 4 MOTOROLA RF DEVICE DATA Motorola, Inc. 2004 MW4IC2020MBR1 MW4IC2020GMBR1 1 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. MAXIMUM RATINGS Symbol Value Unit Drain - Source Voltage Rating VDSS 65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Storage Temperature Range Tstg - 65 to +175 °C Operating Junction Temperature TJ 175 °C Input Power Pin 20 dBm Symbol Value (1) Unit THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case RθJC Stage 1 Stage 2 Stage 3 °C/W 10.5 5.1 2.3 Freescale Semiconductor, Inc... ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) Charge Device Model C5 (Minimum) MOISTURE SENSITIVITY LEVEL Test Methodology Rating Per JESD 22 - A113 3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Wideband 1805 - 1990 MHz Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, Pout = 20 W PEP, f1 = 1990 MHz, f2 = 1990.1 MHz and f1 = 1805 MHz, f2 = 1805.1 MHz, Two - Tone CW Power Gain Gps Drain Efficiency f1 = 1805 MHz, f2 = 1805.1 MHz f1 = 1990 MHz, f2 = 1990.1 MHz ηD 27 29 24 18 26 20 — dB — % Input Return Loss IRL — — - 10 dB Intermodulation Distortion IMD — - 32 - 27 dBc Stability (100 mW<Pout<8 W CW, Load VSWR = 3:1, All Phase Angles) No Spurious > - 60 dBc TYPICAL PERFORMANCES (In Motorola Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, 1805 MHz<Frequency<1990 MHz, 1 - Tone Saturated Pulsed Output Power (f = 1 kHz, Duty Cycle 10%) Psat — 33 — Watts Quiescent Current Accuracy over Temperature ( - 10 to 85°C) ∆IQT — ±5 — % Gain Flatness in 30 MHz Bandwidth @ Pout = 1 W CW GF — 0.15 — dB Deviation from Linear Phase in 30 MHz Bandwidth @ Pout = 1 W CW 1805 - 1880 MHz 1930 - 1990 MHz Φ — — ° Delay — 1.8 — ns Φ∆ — ±10 — ° Delay @ Pout = 1 W CW Including Output Matching Part to Part Phase Variation @ Pout = 1 W CW ±0.5 ±0.2 (1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. (continued) MW4IC2020MBR1 MW4IC2020GMBR1 MOTOROLA RF DEVICE DATA For More Information On This Product, 2 Go to: www.freescale.com Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit TYPICAL CDMA PERFORMANCES (In Modified CDMA Test Fixture, 50 ohm system) VDD = 26 Vdc, DQ1 = 80 mA, IDQ2 = 240 mA, IDQ3 = 250 mA, Pout = 1 W Avg., I1930 MHz<Frequency<1990 MHz, 1 - Tone, 9 Channel Forward Model (Pilot, Paging, Sync, Traffic Codes 8 through 13). Peak/Avg. Ratio 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps — 30 — dB Drain Efficiency ηD — 5 — % Adjacent Channel Power Ratio (±885 kHz @ 30 kHz Bandwidth) ACPR — - 61 — dBc Alternate 1 Channel Power Ratio (±1.25 MHz @ 12.5 kHz Bandwidth) ALT1 — - 69 — dBc Alternate 2 Channel Power Ratio (±2.25 MHz @ 1 MHz Bandwidth) ALT2 — - 59 — dBc Freescale Semiconductor, Inc... TYPICAL GSM EDGE PERFORMANCES (In Modified GSM EDGE Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA, Pout = 5 W Avg., 1805 MHz<Frequency<1990 MHz Power Gain Gps — 29 — dB Drain Efficiency ηD — 15 — % Error Vector Magnitude EVM — 1 — % rms Spectral Regrowth at 400 kHz Offset SR1 — - 66 — dBc Spectral Regrowth at 600 kHz Offset SR2 — - 77 — dBc MOTOROLA RF DEVICE DATA MW4IC2020MBR1 MW4IC2020GMBR1 3 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. VD3 VD2 + VD1 C2 1 2 3 NC 4 NC 5 C5 + C1 RF INPUT C6 Z1 DUT + 16 C8 NC 15 Z2 14 C3 Z9 Z3 C9 Z4 Z5 Z6 C10 C11 C12 Z7 Z8 RF OUTPUT 6 C7 VG1 R1 VG2 R2 7 NC 8 9 10 11 Quiescent Current Temperature Compensation C13 C14 NC 13 12 C4 Freescale Semiconductor, Inc... VG3 R3 Z1 Z2 Z3 Z4 Z5 1.820″ 0.245″ 0.345″ 0.327″ 0.271″ x 0.087″ Microstrip x 0.087″ Microstrip x 0.236″ Microstrip x 0.087″ Microstrip x 0.087″ Microstrip Z6 Z7 Z8 Z9 PCB 0.303″ x 0.087″ Microstrip 0.640″ x 0.087″ Microstrip 0.334″ x 0.087″ Microstrip 1.231″ x 0.043″ Microstrip Taconic TLX8 - 0300, 0.030″, εr = 2.55 Figure 1. MW4IC2020MBR1(GMBR1) Test Circuit Schematic Table 1. MW4IC2020MBR1(GMBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C3 10 µF, 35 V Tantalum Capacitors TAJE226M035 AVX C4 220 nF Chip Capacitor (1206) 12065C224K28 AVX C5, C6, C8 6.8 pF 100B Chip Capacitors 100B6R8CW ATC C7 0.5 pF 100B Chip Capacitor 100B0R5BW ATC C9, C11 1.8 pF 100B Chip Capacitors 100B1R8BW ATC C10 2.2 pF 100B Chip Capacitor 100B2R2BW ATC C12 1 pF 100B Chip Capacitor 100B1R0BW ATC C13 0.3 pF 100B Chip Capacitor 100B0R3BW ATC C14 10 pF 100B Chip Capacitor 100B100GW ATC R1, R2, R3 1.8 kW Chip Resistors (1206) MW4IC2020MBR1 MW4IC2020GMBR1 MOTOROLA RF DEVICE DATA For More Information On This Product, 4 Go to: www.freescale.com Freescale Semiconductor, Inc. C2 C3 VD2 MW4IC2020 Rev 1 VD1 VD3 C8 C5 C1 C6 C14 C7 C9 C10 C11 C12 C13 C4 VG1 R1 Freescale Semiconductor, Inc... R2 VG2 GND R3 VG3 Figure 2. MW4IC2020MBR1(GMBR1) Test Circuit Component Layout MOTOROLA RF DEVICE DATA MW4IC2020MBR1 MW4IC2020GMBR1 5 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. 32 0 Gps 30 −5 28 −10 26 −15 IRL 24 22 20 −20 ηD VDD = 26 Vdc, Pout = 20 W (PEP) IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA 100 kHz Tone Spacing −25 −30 IMD 18 −35 16 1800 1850 1900 IMD, INTERMODULATION DISTORTION (dBc) IRL, INPUT RETURN LOSS (dB) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS −40 2000 1950 −10 VDD = 26 Vdc IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA f = 1840 MHz, 100 kHz Tone Spacing 3rd Order −30 5th Order −40 7th Order −50 −60 −70 −80 0.1 −20 VDD = 26 Vdc IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA f = 1960 MHz, 100 kHz Tone Spacing 10 5th Order −40 7th Order −50 −60 −70 100 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. Pout, OUTPUT POWER (WATTS) AVG. Figure 4. Intermodulation Distortion Products versus Output Power Figure 5. Intermodulation Distortion Products versus Output Power 36 35 Gps 31 30 TC = −30_C 29 24 18 ηD 25_C 27 18 TC = −30_C 12 25 6 15 0 10 100 25_C −30_C 31 12 25_C ηD 29 9 85_C 27 6 85_C VDD = 26 Vdc, IDQ1 = 80 mA 3 IDQ2 = 240 mA, IDQ3 = 250 mA f = 1960 MHz, 1−Carrier N−CDMA 0 1 10 25 85_C 1 Gps 33 ηD, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) VDD = 26 Vdc IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA f = 1960 MHz (CW) 23 0.1 3rd Order −30 −80 1 35 33 −10 23 0.1 Pout, OUTPUT POWER (WATTS) AVG. Pout, OUTPUT POWER (WATTS) AVG. Figure 6. Power Gain and Drain Efficiency versus Output Power Figure 7. Power Gain and Drain Efficiency versus Output Power ηD, DRAIN EFFICIENCY (%) −20 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Two - Tone Wideband Performance G ps , POWER GAIN (dB) Freescale Semiconductor, Inc... f, FREQUENCY (MHz) MW4IC2020MBR1 MW4IC2020GMBR1 MOTOROLA RF DEVICE DATA For More Information On This Product, 6 Go to: www.freescale.com Freescale Semiconductor, Inc. 85_C VDD = 26 Vdc, IDQ1 = 80 mA I = 240 mA, IDQ3 = 250 mA −50 DQ2 f = 1960 MHz, Single−Carrier N−CDMA TC = 25_C −30_C −55 −30_C 25_C −60 85_C ACPR −65 ALT2 −30_C −70 ALT1 85_C −75 0.1 34 TC = −30_C 32 G ps , POWER GAIN (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT 1 & 2, ALTERNATE 1 & 2 CHANNEL POWER RATIO (dB 25_C 30 28 85_C 26 VDD = 26 Vdc Pout = 20 W (PEP) IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA 24 25_C 1 22 1800 10 1850 1900 1950 2000 Pout, OUTPUT POWER (WATTS) AVG. f, FREQUENCY (MHz) Figure 8. Alternate Channel Power Ratio, Alternate 1 and 2 Channel Power Ratio versus Output Power Figure 9. Power Gain versus Frequency 4 VDD = 26 Vdc 3.5 IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA EDGE Modulation, f = 1840 MHz 3 EVM, ERROR VECTOR MAGNITUDE (% rms) EVM, ERROR VECTOR MAGNITUDE (% rms) −45 TC = 85_C 25_C −30_C 2.5 2 1.5 1 0.5 0 4 3.5 VDD = 26 Vdc IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA EDGE Modulation, f = 1960 MHz 3 TC = 85_C 25_C −30_C 2.5 2 1.5 1 0.5 0 0.1 1 10 100 100 Figure 11. Error Vector Magnitude versus Output Power 85_C VDD = 26 Vdc IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA EDGE Modulation, f = 1840 MHz −65 −30_C 85_C SR 400 kHz 25_C −70 −30_C −75 SR 600 kHz −80 −85 0.1 10 Figure 10. Error Vector Magnitude versus Output Power TC = 25_C −60 1 Pout, OUTPUT POWER (WATTS) AVG. −50 −55 0.1 Pout, OUTPUT POWER (WATTS) AVG. 1 10 100 SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) Freescale Semiconductor, Inc... TYPICAL CHARACTERISTICS −50 VDD = 26 Vdc −55 IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA EDGE Modulation, f = 1960 MHz −60 −30_C TC = 25_C −65 85_C SR 400 kHz −70 85_C 25_C −75 −30_C SR 600 kHz −80 −85 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. Pout, OUTPUT POWER (WATTS) AVG. Figure 12. Spectral Regrowth at 400 and 600 kHz versus Output Power Figure 13. Spectral Regrowth at 400 and 600 kHz versus Output Power MOTOROLA RF DEVICE DATA MW4IC2020MBR1 MW4IC2020GMBR1 7 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS MTTF FACTOR (HOURS X AMPS 2 ) 1.E+09 1.E+08 1.E+07 1st Stage 1.E+06 1.E+05 1.E+04 90 Freescale Semiconductor, Inc... 3rd Stage 2nd Stage 100 110 120 130 140 150 160 170 180 190 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 14. MTTF Factor versus Junction Temperature MW4IC2020MBR1 MW4IC2020GMBR1 MOTOROLA RF DEVICE DATA For More Information On This Product, 8 Go to: www.freescale.com Freescale Semiconductor, Inc. f = 1805 MHz f = 1990 MHz f = 1805 MHz f = 1990 MHz Zload* Zin Freescale Semiconductor, Inc... Zo = 50 Ω VDD = 26 V, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ1 = 300 mA, Pout = 20 W PEP Two−Tone CW Zin f MHz Zin Ω Zload Ω 1805 40.00 + j6.50 8.75 - j1.42 1842 40.00 + j2.00 7.00 - j2.70 1880 40.00 - j1.50 5.90 - j2.97 1930 40.00 - j1.80 5.46 - j3.20 1960 40.00 - j2.10 4.30 - j3.35 1990 40.00 - j2.60 4.45 - j3.30 = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Z in Z load Figure 15. Series Equivalent Output Impedance MOTOROLA RF DEVICE DATA MW4IC2020MBR1 MW4IC2020GMBR1 9 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. PACKAGE DIMENSIONS r1 C A B 2X E1 B aaa A NOTE 6 M PIN ONE INDEX 4X aaa M b1 C A 6X e1 4X Freescale Semiconductor, Inc... e2 2X e3 e D1 aaa b3 aaa M C A b2 C A D M M 10X b aaa M C A ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ N E VIEW Y - Y DATUM PLANE H A c1 C SEATING PLANE F Y ZONE "J" E2 Y A1 7 A2 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H−. 5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 (0.13) TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3" DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. 7. DIM A2 APPLIES WITHIN ZONE "J" ONLY. CASE 1329 - 09 ISSUE J TO - 272 WB - 16 PLASTIC MW4IC2020MBR1 DIM A A1 A2 D D1 E E1 E2 F M N b b1 b2 b3 c1 e e1 e2 e3 r1 aaa INCHES MIN MAX .100 .104 .038 .044 .040 .042 .928 .932 .810 BSC .551 .559 .353 .357 .346 .350 .025 BSC .600 −−− .270 −−− .011 .017 .037 .043 .037 .043 .225 .231 .007 .011 .054 BSC .040 BSC .224 BSC .150 BSC .063 .068 .004 MILLIMETERS MIN MAX 2.54 2.64 0.96 1.12 1.02 1.07 23.57 23.67 20.57 BSC 14.00 14.20 8.97 9.07 8.79 8.89 0.64 BSC 15.24 −−− 6.86 −−− 0.28 0.43 0.94 1.09 0.94 1.09 5.72 5.87 .18 .28 1.37 BSC 1.02 BSC 5.69 BSC 3.81 BSC 1.6 1.73 .10 MW4IC2020MBR1 MW4IC2020GMBR1 MOTOROLA RF DEVICE DATA For More Information On This Product, 10 Go to: www.freescale.com Freescale Semiconductor, Inc. E1 r1 C A B 2X aaa A B M 4X PIN ONE INDEX aaa M b1 C A ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ 6X e1 4X e2 2X e3 b3 aaa M C A e D1 Freescale Semiconductor, Inc... aaa M D M b2 C A b C A 10X aaa M NOTE 6 N E2 VIEW Y - Y E DETAIL Y DATUM PLANE H A2 A c1 E2 Y Y L1 t L GAGE PLANE A1 DETAIL Y C SEATING PLANE NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H−. 5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 (0.13) TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3" DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SINK. DIM A A1 A2 D D1 E E1 E2 L L1 M N b b1 b2 b3 c1 e e1 e2 e3 r1 t aaa INCHES MIN MAX .100 .104 .001 .004 .099 .110 .928 .932 .810 BSC .429 .437 .353 .357 .346 .350 .018 .024 .01 BSC .600 −−− .270 −−− .011 .017 .037 .043 .037 .043 .225 .231 .007 .011 .054 BSC .040 BSC .224 BSC .150 BSC .063 .068 2° 8° .004 MILLIMETERS MIN MAX 2.54 2.64 0.02 0.10 2.51 2.79 23.57 23.67 20.57 BSC 10.90 11.10 8.97 9.07 8.79 8.89 4.90 5.06 0.25 BSC 15.24 −−− 6.86 −−− 0.28 0.43 0.94 1.09 0.94 1.09 5.72 5.87 .18 .28 1.37 BSC 1.02 BSC 5.69 BSC 3.81 BSC 1.6 1.73 2° 8° .10 CASE 1329A - 03 ISSUE B TO - 272 WB - 16 GULL PLASTIC MW4IC2020GMBR1 MOTOROLA RF DEVICE DATA MW4IC2020MBR1 MW4IC2020GMBR1 11 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. 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Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MW4IC2020MBR1 MW4IC2020GMBR1 MOTOROLA RF DEVICE DATA ◊For More Information On This Product, MW4IC2020/D 12 Go to: www.freescale.com