MOTOROLA MW4IC2020 Rf ldmos wideband integrated power amplifier Datasheet

MOTOROLA
Freescale Semiconductor, Inc.
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by MW4IC2020/D
SEMICONDUCTOR TECHNICAL DATA
The Wideband IC Line
Freescale Semiconductor, Inc...
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC2020M wideband integrated circuit is designed for base station
applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC
technology and integrates a multi - stage structure. Its wideband On - Chip
design makes it usable from 1600 to 2400 MHz. The linearity performances
cover all modulations for cellular applications: GSM, GSM EDGE, TDMA,
CDMA and W - CDMA.
Final Application
Typical Two - Tone Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 =
200 mA, IDQ3 = 300 mA, Pout = 20 Watts PEP, Full Frequency Band
Power Gain — 29 dB
IMD — - 32 dBc
Drain Efficiency — 26% (at 1805 MHz) and 20% (at 1990 MHz)
Driver Applications
Typical GSM EDGE Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 =
230 mA, IDQ3 = 230 mA, Pout = 5 Watts Avg., Full Frequency Band
Power Gain — 29 dB
Spectral Regrowth @ 400 kHz Offset = - 66 dBc
Spectral Regrowth @ 600 kHz Offset = - 77 dBc
EVM — 1% rms
Typical CDMA Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 =
240 mA, IDQ3 = 250 mA, Pout = 1 Watt Avg., Full Frequency Band, IS - 97
Pilot, Sync, Paging, Traffic Codes 8 through 13
Power Gain — 30 dB
ACPR @ 885 kHz Offset = - 61 dBc @ 30 kHz Bandwidth
ALT1 @ 1.25 MHz Offset = - 69 dBc @ 12.5 kHz Bandwidth
ALT2 @ 2.25 MHz Offset = - 59 dBc @ 1 MHz Bandwidth
• Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 8 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
• Integrated Temperature Compensation with Enable/Disable Function
• On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• Also Available in Gull Wing for Surface Mount
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
MW4IC2020MBR1
MW4IC2020GMBR1
1805 - 1990 MHz, 20 W, 26 V
GSM/GSM EDGE, CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW4IC2020MBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW4IC2020GMBR1
PIN CONNECTIONS
VRD1
VRG1
VDS2
VDS1
3 Stages IC
RFin
VGS1
VGS2
VGS3
GND
VDS2
VRD1
VRG1
VDS1
1
2
3
4
5
16
15
RFin
6
14
VDS3/
RFout
VGS1
VGS2
VGS3
GND
7
8
9
10
11
13
12
GND
VDS3/RFout
Quiescent Current
Temperature Compensation
GND
(Top View)
NOTE: Exposed backside flag is source
Functional Block Diagram
terminal for transistors.
(1) Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1987.
REV 4
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2004
MW4IC2020MBR1 MW4IC2020GMBR1
1
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MAXIMUM RATINGS
Symbol
Value
Unit
Drain - Source Voltage
Rating
VDSS
65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Storage Temperature Range
Tstg
- 65 to +175
°C
Operating Junction Temperature
TJ
175
°C
Input Power
Pin
20
dBm
Symbol
Value (1)
Unit
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
RθJC
Stage 1
Stage 2
Stage 3
°C/W
10.5
5.1
2.3
Freescale Semiconductor, Inc...
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C5 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology
Rating
Per JESD 22 - A113
3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS (In Motorola Wideband 1805 - 1990 MHz Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 80 mA, IDQ2 = 200 mA,
IDQ3 = 300 mA, Pout = 20 W PEP, f1 = 1990 MHz, f2 = 1990.1 MHz and f1 = 1805 MHz, f2 = 1805.1 MHz, Two - Tone CW
Power Gain
Gps
Drain Efficiency
f1 = 1805 MHz, f2 = 1805.1 MHz
f1 = 1990 MHz, f2 = 1990.1 MHz
ηD
27
29
24
18
26
20
—
dB
—
%
Input Return Loss
IRL
—
—
- 10
dB
Intermodulation Distortion
IMD
—
- 32
- 27
dBc
Stability
(100 mW<Pout<8 W CW, Load VSWR = 3:1, All Phase Angles)
No Spurious > - 60 dBc
TYPICAL PERFORMANCES (In Motorola Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA,
1805 MHz<Frequency<1990 MHz, 1 - Tone
Saturated Pulsed Output Power
(f = 1 kHz, Duty Cycle 10%)
Psat
—
33
—
Watts
Quiescent Current Accuracy over Temperature ( - 10 to 85°C)
∆IQT
—
±5
—
%
Gain Flatness in 30 MHz Bandwidth @ Pout = 1 W CW
GF
—
0.15
—
dB
Deviation from Linear Phase in 30 MHz Bandwidth @ Pout = 1 W CW
1805 - 1880 MHz
1930 - 1990 MHz
Φ
—
—
°
Delay
—
1.8
—
ns
Φ∆
—
±10
—
°
Delay @ Pout = 1 W CW Including Output Matching
Part to Part Phase Variation @ Pout = 1 W CW
±0.5
±0.2
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
(continued)
MW4IC2020MBR1 MW4IC2020GMBR1
MOTOROLA RF DEVICE DATA
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ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
TYPICAL CDMA PERFORMANCES (In Modified CDMA Test Fixture, 50 ohm system) VDD = 26 Vdc, DQ1 = 80 mA, IDQ2 = 240 mA, IDQ3 =
250 mA, Pout = 1 W Avg., I1930 MHz<Frequency<1990 MHz, 1 - Tone, 9 Channel Forward Model (Pilot, Paging, Sync, Traffic Codes 8
through 13). Peak/Avg. Ratio 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
—
30
—
dB
Drain Efficiency
ηD
—
5
—
%
Adjacent Channel Power Ratio (±885 kHz @ 30 kHz Bandwidth)
ACPR
—
- 61
—
dBc
Alternate 1 Channel Power Ratio (±1.25 MHz @ 12.5 kHz Bandwidth)
ALT1
—
- 69
—
dBc
Alternate 2 Channel Power Ratio (±2.25 MHz @ 1 MHz Bandwidth)
ALT2
—
- 59
—
dBc
Freescale Semiconductor, Inc...
TYPICAL GSM EDGE PERFORMANCES (In Modified GSM EDGE Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 80 mA,
IDQ2 = 230 mA, IDQ3 = 230 mA, Pout = 5 W Avg., 1805 MHz<Frequency<1990 MHz
Power Gain
Gps
—
29
—
dB
Drain Efficiency
ηD
—
15
—
%
Error Vector Magnitude
EVM
—
1
—
% rms
Spectral Regrowth at 400 kHz Offset
SR1
—
- 66
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 77
—
dBc
MOTOROLA RF DEVICE DATA
MW4IC2020MBR1 MW4IC2020GMBR1
3
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VD3
VD2
+
VD1
C2
1
2
3 NC
4 NC
5
C5
+
C1
RF
INPUT
C6
Z1
DUT
+
16
C8
NC 15
Z2
14
C3
Z9
Z3
C9
Z4
Z5
Z6
C10
C11
C12
Z7
Z8
RF
OUTPUT
6
C7
VG1
R1
VG2
R2
7 NC
8
9
10
11
Quiescent Current
Temperature Compensation
C13 C14
NC 13
12
C4
Freescale Semiconductor, Inc...
VG3
R3
Z1
Z2
Z3
Z4
Z5
1.820″
0.245″
0.345″
0.327″
0.271″
x 0.087″ Microstrip
x 0.087″ Microstrip
x 0.236″ Microstrip
x 0.087″ Microstrip
x 0.087″ Microstrip
Z6
Z7
Z8
Z9
PCB
0.303″ x 0.087″ Microstrip
0.640″ x 0.087″ Microstrip
0.334″ x 0.087″ Microstrip
1.231″ x 0.043″ Microstrip
Taconic TLX8 - 0300, 0.030″, εr = 2.55
Figure 1. MW4IC2020MBR1(GMBR1) Test Circuit Schematic
Table 1. MW4IC2020MBR1(GMBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3
10 µF, 35 V Tantalum Capacitors
TAJE226M035
AVX
C4
220 nF Chip Capacitor (1206)
12065C224K28
AVX
C5, C6, C8
6.8 pF 100B Chip Capacitors
100B6R8CW
ATC
C7
0.5 pF 100B Chip Capacitor
100B0R5BW
ATC
C9, C11
1.8 pF 100B Chip Capacitors
100B1R8BW
ATC
C10
2.2 pF 100B Chip Capacitor
100B2R2BW
ATC
C12
1 pF 100B Chip Capacitor
100B1R0BW
ATC
C13
0.3 pF 100B Chip Capacitor
100B0R3BW
ATC
C14
10 pF 100B Chip Capacitor
100B100GW
ATC
R1, R2, R3
1.8 kW Chip Resistors (1206)
MW4IC2020MBR1 MW4IC2020GMBR1
MOTOROLA RF DEVICE DATA
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C2
C3
VD2
MW4IC2020
Rev 1
VD1
VD3
C8
C5
C1
C6
C14
C7
C9
C10
C11 C12
C13
C4
VG1
R1
Freescale Semiconductor, Inc...
R2
VG2
GND
R3
VG3
Figure 2. MW4IC2020MBR1(GMBR1) Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MW4IC2020MBR1 MW4IC2020GMBR1
5
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32
0
Gps
30
−5
28
−10
26
−15
IRL
24
22
20
−20
ηD
VDD = 26 Vdc, Pout = 20 W (PEP)
IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA
100 kHz Tone Spacing
−25
−30
IMD
18
−35
16
1800
1850
1900
IMD, INTERMODULATION DISTORTION (dBc)
IRL, INPUT RETURN LOSS (dB)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS
−40
2000
1950
−10
VDD = 26 Vdc
IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA
f = 1840 MHz, 100 kHz Tone Spacing
3rd Order
−30
5th Order
−40
7th Order
−50
−60
−70
−80
0.1
−20
VDD = 26 Vdc
IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA
f = 1960 MHz, 100 kHz Tone Spacing
10
5th Order
−40
7th Order
−50
−60
−70
100
0.1
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS) AVG.
Figure 4. Intermodulation Distortion Products
versus Output Power
Figure 5. Intermodulation Distortion Products
versus Output Power
36
35
Gps
31
30
TC = −30_C
29
24
18
ηD
25_C
27
18
TC = −30_C
12
25
6
15
0
10
100
25_C
−30_C
31
12
25_C
ηD
29
9
85_C
27
6
85_C
VDD = 26 Vdc, IDQ1 = 80 mA
3
IDQ2 = 240 mA, IDQ3 = 250 mA
f = 1960 MHz, 1−Carrier N−CDMA
0
1
10
25
85_C
1
Gps
33
ηD, DRAIN EFFICIENCY (%)
G ps , POWER GAIN (dB)
VDD = 26 Vdc
IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA
f = 1960 MHz (CW)
23
0.1
3rd Order
−30
−80
1
35
33
−10
23
0.1
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Power Gain and Drain Efficiency
versus Output Power
Figure 7. Power Gain and Drain Efficiency
versus Output Power
ηD, DRAIN EFFICIENCY (%)
−20
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Two - Tone Wideband Performance
G ps , POWER GAIN (dB)
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f, FREQUENCY (MHz)
MW4IC2020MBR1 MW4IC2020GMBR1
MOTOROLA RF DEVICE DATA
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85_C
VDD = 26 Vdc, IDQ1 = 80 mA
I
= 240 mA, IDQ3 = 250 mA
−50 DQ2
f = 1960 MHz, Single−Carrier N−CDMA
TC = 25_C
−30_C
−55
−30_C
25_C
−60
85_C
ACPR
−65
ALT2
−30_C
−70
ALT1
85_C
−75
0.1
34
TC = −30_C
32
G ps , POWER GAIN (dB)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT 1 & 2, ALTERNATE 1 & 2 CHANNEL POWER RATIO (dB
25_C
30
28
85_C
26
VDD = 26 Vdc
Pout = 20 W (PEP)
IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA
24
25_C
1
22
1800
10
1850
1900
1950
2000
Pout, OUTPUT POWER (WATTS) AVG.
f, FREQUENCY (MHz)
Figure 8. Alternate Channel Power Ratio,
Alternate 1 and 2 Channel Power Ratio
versus Output Power
Figure 9. Power Gain versus Frequency
4
VDD = 26 Vdc
3.5 IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA
EDGE Modulation, f = 1840 MHz
3
EVM, ERROR VECTOR MAGNITUDE (% rms)
EVM, ERROR VECTOR MAGNITUDE (% rms)
−45
TC = 85_C
25_C
−30_C
2.5
2
1.5
1
0.5
0
4
3.5
VDD = 26 Vdc
IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA
EDGE Modulation, f = 1960 MHz
3
TC = 85_C
25_C
−30_C
2.5
2
1.5
1
0.5
0
0.1
1
10
100
100
Figure 11. Error Vector Magnitude versus
Output Power
85_C
VDD = 26 Vdc
IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA
EDGE Modulation, f = 1840 MHz
−65
−30_C
85_C
SR 400 kHz
25_C
−70
−30_C
−75
SR 600 kHz
−80
−85
0.1
10
Figure 10. Error Vector Magnitude versus
Output Power
TC = 25_C
−60
1
Pout, OUTPUT POWER (WATTS) AVG.
−50
−55
0.1
Pout, OUTPUT POWER (WATTS) AVG.
1
10
100
SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc)
SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc)
Freescale Semiconductor, Inc...
TYPICAL CHARACTERISTICS
−50
VDD = 26 Vdc
−55 IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA
EDGE Modulation, f = 1960 MHz
−60
−30_C
TC = 25_C
−65
85_C
SR 400 kHz
−70
85_C
25_C
−75
−30_C
SR 600 kHz
−80
−85
0.1
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS) AVG.
Figure 12. Spectral Regrowth at 400 and 600 kHz
versus Output Power
Figure 13. Spectral Regrowth at 400 and 600 kHz
versus Output Power
MOTOROLA RF DEVICE DATA
MW4IC2020MBR1 MW4IC2020GMBR1
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TYPICAL CHARACTERISTICS
MTTF FACTOR (HOURS X AMPS 2 )
1.E+09
1.E+08
1.E+07
1st Stage
1.E+06
1.E+05
1.E+04
90
Freescale Semiconductor, Inc...
3rd Stage
2nd Stage
100
110
120
130
140
150
160
170
180 190
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 14. MTTF Factor versus Junction Temperature
MW4IC2020MBR1 MW4IC2020GMBR1
MOTOROLA RF DEVICE DATA
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f = 1805 MHz
f = 1990 MHz
f = 1805 MHz
f = 1990 MHz
Zload*
Zin
Freescale Semiconductor, Inc...
Zo = 50 Ω
VDD = 26 V, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ1 = 300 mA, Pout = 20 W PEP Two−Tone CW
Zin
f
MHz
Zin
Ω
Zload
Ω
1805
40.00 + j6.50
8.75 - j1.42
1842
40.00 + j2.00
7.00 - j2.70
1880
40.00 - j1.50
5.90 - j2.97
1930
40.00 - j1.80
5.46 - j3.20
1960
40.00 - j2.10
4.30 - j3.35
1990
40.00 - j2.60
4.45 - j3.30
= Device input impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 15. Series Equivalent Output Impedance
MOTOROLA RF DEVICE DATA
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PACKAGE DIMENSIONS
r1
C A B
2X
E1
B
aaa
A
NOTE 6
M
PIN ONE
INDEX
4X
aaa
M
b1
C A
6X
e1
4X
Freescale Semiconductor, Inc...
e2
2X
e3
e
D1
aaa
b3
aaa M C A
b2
C A
D M
M
10X
b
aaa
M
C A
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
N
E
VIEW Y - Y
DATUM
PLANE
H
A
c1
C
SEATING
PLANE
F
Y
ZONE "J"
E2
Y
A1
7 A2
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES PER
ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE THE
LEAD EXITS THE PLASTIC BODY AT THE TOP OF
THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1"
DO INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE .005 (0.13)
TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3"
DIMENSIONS AT MAXIMUM MATERIAL CONDITION.
6. HATCHING REPRESENTS THE EXPOSED AREA OF
THE HEAT SLUG.
7. DIM A2 APPLIES WITHIN ZONE "J" ONLY.
CASE 1329 - 09
ISSUE J
TO - 272 WB - 16
PLASTIC
MW4IC2020MBR1
DIM
A
A1
A2
D
D1
E
E1
E2
F
M
N
b
b1
b2
b3
c1
e
e1
e2
e3
r1
aaa
INCHES
MIN
MAX
.100
.104
.038
.044
.040
.042
.928
.932
.810 BSC
.551
.559
.353
.357
.346
.350
.025 BSC
.600
−−−
.270
−−−
.011
.017
.037
.043
.037
.043
.225
.231
.007
.011
.054 BSC
.040 BSC
.224 BSC
.150 BSC
.063
.068
.004
MILLIMETERS
MIN
MAX
2.54
2.64
0.96
1.12
1.02
1.07
23.57
23.67
20.57 BSC
14.00
14.20
8.97
9.07
8.79
8.89
0.64 BSC
15.24
−−−
6.86
−−−
0.28
0.43
0.94
1.09
0.94
1.09
5.72
5.87
.18
.28
1.37 BSC
1.02 BSC
5.69 BSC
3.81 BSC
1.6
1.73
.10
MW4IC2020MBR1 MW4IC2020GMBR1
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E1
r1
C A B
2X
aaa
A
B
M
4X
PIN ONE
INDEX
aaa
M
b1
C A
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
6X
e1
4X
e2
2X
e3
b3
aaa M C A
e
D1
Freescale Semiconductor, Inc...
aaa
M
D
M
b2
C A
b
C A
10X
aaa
M
NOTE 6
N
E2
VIEW Y - Y
E
DETAIL Y
DATUM
PLANE
H
A2
A
c1
E2
Y
Y
L1
t
L
GAGE
PLANE
A1
DETAIL Y
C
SEATING
PLANE
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES PER
ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE THE
LEAD EXITS THE PLASTIC BODY AT THE TOP OF
THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1"
DO INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE .005 (0.13)
TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3"
DIMENSIONS AT MAXIMUM MATERIAL CONDITION.
6. HATCHING REPRESENTS THE EXPOSED AREA OF
THE HEAT SINK.
DIM
A
A1
A2
D
D1
E
E1
E2
L
L1
M
N
b
b1
b2
b3
c1
e
e1
e2
e3
r1
t
aaa
INCHES
MIN
MAX
.100
.104
.001
.004
.099
.110
.928
.932
.810 BSC
.429
.437
.353
.357
.346
.350
.018
.024
.01 BSC
.600
−−−
.270
−−−
.011
.017
.037
.043
.037
.043
.225
.231
.007
.011
.054 BSC
.040 BSC
.224 BSC
.150 BSC
.063
.068
2°
8°
.004
MILLIMETERS
MIN
MAX
2.54
2.64
0.02
0.10
2.51
2.79
23.57
23.67
20.57 BSC
10.90
11.10
8.97
9.07
8.79
8.89
4.90
5.06
0.25 BSC
15.24
−−−
6.86
−−−
0.28
0.43
0.94
1.09
0.94
1.09
5.72
5.87
.18
.28
1.37 BSC
1.02 BSC
5.69 BSC
3.81 BSC
1.6
1.73
2°
8°
.10
CASE 1329A - 03
ISSUE B
TO - 272 WB - 16 GULL
PLASTIC
MW4IC2020GMBR1
MOTOROLA RF DEVICE DATA
MW4IC2020MBR1 MW4IC2020GMBR1
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