Freescale MRF5S19150HR3 Rf power field effect transistors n-channel enhancement-mode lateral mosfet Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF5S19150H
Rev. 2, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ =
1400 mA, Avg., Pout = 32 Watts Avg., Full Frequency Band, IS - 95 CDMA
(Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 26%
IM3 @ 2.5 MHz Offset — - 36.5 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — - 50 dB in 30 kHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF5S19150HR3
MRF5S19150HSR3
1930- 1990 MHz, 32 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF5S19150HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF5S19150HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
427
2.44
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
CW
120
0.76
W
W/°C
Symbol
Value (1,2)
Unit
CW Operation @ TC = 25°C
Derate above 25°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 75°C, 32 W CW
RθJC
0.41
0.44
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S19150HR3 MRF5S19150HSR3
1
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 360 μAdc)
VGS(th)
2.5
2.8
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1400 mAdc)
VGS(Q)
—
3.8
—
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 3.6 Adc)
VDS(on)
—
0.24
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3.6 Adc)
gfs
—
9
—
S
Crss
—
3.1
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 32 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain
Gps
13
14
—
dB
Drain Efficiency
ηD
24
26
—
%
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
IM3
—
- 36.5
- 35
dBc
ACPR
—
- 50
- 48
dBc
IRL
—
- 17
-9
dB
1. Part internally matched both on input and output.
MRF5S19150HR3 MRF5S19150HSR3
2
RF Device Data
Freescale Semiconductor
+
C9
B1
C17
+
C18
C19
+
C20
R1
VBIAS
R3
+
R2
C8
C7
C15
C6
+
C21
C16
RF
OUTPUT
Z11
Z8
Z1
Z3
Z2
Z4 C4
Z5
Z6
VSUPPLY
+
C23
C14
C5
RF
INPUT
+
C22
DUT
Z13
Z10
Z14
C24
Z15
Z7
Z12
C1
C2
C3
Z9
C26
B2
R4
+
C10
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
C27
C13
C11
C25
C28
C29
+
C32
+
C30
+
C33
+
C31
C12
1.023″ x 0.082″ Microstrip
0.398″ x 0.082″ Microstrip
0.203″ x 0.082″ Microstrip
0.074″ x 0.082″ Microstrip
0.630″ x 0.084″ Microstrip
0.557″ x 1.030″ x 0.237″ Microstrip Taper
0.103″ x 1.030″ Microstrip
1.280″ x 0.046″ Microstrip
Z9
Z10
Z11
Z12
Z13
Z14
Z15
PCB
1.280″ x 0.046″ Microstrip
0.090″ x 1.055″ Microstrip
1.125″ x 0.068″ Microstrip
1.125″ x 0.068″ Microstrip
0.505″ x 1.055″ Microstrip
0.898″ x 0.105″ Microstrip
1.133″ x 0.082″ Microstrip
Arlon GX0300 - 55- 22, 0.03″, εr = 2.55
Figure 1. MRF5S19150HR3(SR3) Test Circuit Schematic
Table 5. MRF5S19150HR3(SR3) Test Circuit Component Designations and Values
Part
Description
B1, B2
Short RF Beads
C1, C2
0.6 – 4.5 Variable Capacitors, Gigatrim
C3
0.8 pF Chip Capacitor
C4, C5, C13, C14, C24, C25
9.1 pF Chip Capacitors
C8, C10
1.0 μF, 50 V SMT Tantalum Capacitors
C6, C12, C16, C17, C18, C27, C28, C29
0.1 μF Chip Capacitors
C7, C11, C15, C26
1000 pF Chip Capacitors
C9
100 μF, 50 V Electrolytic Capacitor
C23
470 μF, 63 V Electrolytic Capacitor
C19, C20, C21, C22, C30, C31, C32, C33
22 μF, 35 V Tantalum Capacitors
R1
1 kW Chip Resistor
R2
560 kW Chip Resistor
R3, R4
12 W Chip Resistors
MRF5S19150HR3 MRF5S19150HSR3
RF Device Data
Freescale Semiconductor
3
C17 C18
C19 C20 C23
C14
C9
B1 R3
C5
R1
VGG
VDD
C15
R2
C7
C8
C16
C6
C21 C22
C24
C1
C3
C2
C10
B2
MRF5S19150
Rev 4
C11
R4
C12
CUT OUT AREA
C4
C32 C33
C26
C27
C13
C25
C30 C31
C28 C29
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5S19150HR3(SR3) Test Circuit Component Layout
MRF5S19150HR3 MRF5S19150HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Gps
35
13
ηD
30
12
25
VDD = 28 Vdc, Pout = 32 W (Avg.), IDQ = 1400 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
11
10
20
−30
IRL
9
8
−35
IM3
7
6
ACPR
5
1900
−40
1.228 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
−45
−50
1920
1940
1960
1980
−55
2020
2000
−10
−20
−30
−40
−50
−60
IRL, INPUT RETURN LOSS (dB)
14
ηD, DRAIN
EFFICIENCY (%)
40
IM3 (dBc), ACPR (dBc)
G ps , POWER GAIN (dB)
15
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance
@ Pout = 32 Watts Avg.
−15
IDQ = 2100 mA
1700 mA
1400 mA
14
1050 mA
13
700 mA
12
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
11
IMD, INTERMODULATION DISTORTION (dBc)
1
10
−20
−25
−40
700 mA
−45
1050 mA
10
1
100
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation versus
Output Power
−25
3rd Order
−35
5th Order
−45
7th Order
VDD = 28 Vdc, Pout = 150 W (PEP), IDQ = 1400 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
−55
1400 mA
−50
59
−50
1700 mA
−35
58
−40
IDQ = 2100 mA
−30
−20
−30
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
−55
−60
0.1
1
10
Pout , OUTPUT POWER (dBm)
G ps , POWER GAIN (dB)
15
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
16
P3dB = 53.71 dBm (234.96 W)
57
56
55
P1dB = 53.01 dBm (199.99 W)
54
53
52
51
VDD = 28 Vdc, IDQ = 1400 mA
Pulsed CW, 8 μsec (on), 1 msec (off)
f = 1960 MHz
50
49
35
36
37
38
39
40
41
42
43
44
TWO−TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
45
MRF5S19150HR3 MRF5S19150HSR3
RF Device Data
Freescale Semiconductor
5
40
35
109
−25
IM3
VDD = 28 Vdc, IDQ = 1400 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2 x N−CDMA, 2.5 MHz @ 1.2288 MHz Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
ηD
−30
−35
30
−40
25
−45
20
ACPR
15
−50
−55
Gps
10
5
−60
−65
0
MTTF FACTOR (HOURS X AMPS2)
45
IM3 (dBc), ACPR (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS
107
106
100
−70
10
1
108
120
Pout, OUTPUT POWER (WATTS) AVG., N−CDMA
140
160
180
200
220
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. 2 - Carrier N - CDMA ACPR, IM3, Power
Gain, Drain Efficiency versus Output Power
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 9. MTTF Factor versus Junction Temperature
N - CDMA TEST SIGNAL
0
1.2288 MHz
Channel BW
−10
−20
−IM3 in
1.2288 MHz
Integrated BW
−30
+IM3 in
1.2288 MHz
Integrated BW
(dB)
−40
−50
−60
−70
−ACPR in 30 kHz
Integrated BW
+ACPR in 30 kHz
Integrated BW
−80
−90
−100
−7.5
−6
−4.5
−3
−1.5
0
1.5
3
4.5
6
7.5
f, FREQUENCY (MHz)
Figure 10. 2 - Carrier N - CDMA Spectrum
MRF5S19150HR3 MRF5S19150HSR3
6
RF Device Data
Freescale Semiconductor
Zo = 10 Ω
f = 1990 MHz
Zload
f = 1930 MHz
f = 1930 MHz
Zsource
f = 1990 MHz
VDD = 28 V, IDQ = 1400 mA, Pout = 32 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
1930
1.89 - j5.24
1.06 - j1.58
1960
1.64 - j5.29
0.88 - j1.37
1990
1.3 - j5.49
0.90 - j1.21
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 11. Series Equivalent Source and Load Impedance
MRF5S19150HR3 MRF5S19150HSR3
RF Device Data
Freescale Semiconductor
7
NOTES
MRF5S19150HR3 MRF5S19150HSR3
8
RF Device Data
Freescale Semiconductor
NOTES
MRF5S19150HR3 MRF5S19150HSR3
RF Device Data
Freescale Semiconductor
9
NOTES
MRF5S19150HR3 MRF5S19150HSR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
M
T A
M
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. DELETED
M
B
(FLANGE)
3
K
2
bbb
D
T A
M
B
M
M
M
bbb
M
T A
M
B
M
ccc
M
T A
M
B
M
N
R
(INSULATOR)
ccc
M
T A
M
aaa
M
T A
M
(LID)
B
S
(LID)
M
(INSULATOR)
B
M
H
C
F
E
T
A
A
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.335
1.345
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
.118
.138
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
13.6
13.8
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
3.00
3.51
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
SEATING
PLANE
(FLANGE)
CASE 465B - 03
ISSUE D
NI - 880
MRF5S19150HR3
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
B
(FLANGE)
K
2
bbb
M
D
T A
M
B
M
bbb
M
T A
M
B
M
T A
M
B
R
(INSULATOR)
ccc
M
N
ccc
M
M
T A
M
S
(LID)
M
(LID)
B
aaa
M
T A
M
B
M
(INSULATOR)
M
H
C
F
E
T
A
A
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.905
0.915
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
22.99
23.24
13.60
13.80
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
SEATING
PLANE
(FLANGE)
CASE 465C - 02
ISSUE D
NI - 880S
MRF5S19150HSR3
MRF5S19150HR3 MRF5S19150HSR3
RF Device Data
Freescale Semiconductor
11
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© Freescale Semiconductor, Inc. 2006. All rights reserved.
MRF5S19150HR3 MRF5S19150HSR3
Document Number: MRF5S19150H
Rev. 2, 5/2006
12
RF Device Data
Freescale Semiconductor
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