® GBJ3506 thru GBJ3510 Pb GBJ3506 thru GBJ3510 Pb Free Plating Product 35.0 AMPERE GLASS PASSIVATED FLAT BRIDGE RECTIFIERS Features Dimensions in inches and (millimeters) GBJ • Glass passivated chip junction 1.193(30.3) 1.169(29.7) • Low forward voltage drop .189(4.8) .173(4.4) HOLE FOR NO. 6 SCREW .119 (0.5) .800(20.3) .697(17.7) .441(11.2) • High surge overload rating of 350 A peak • Ideal for printed circuit board .106(2.7) .096(2.3) .094(2.4) .078(2.0) .043(1.1) .035(0.9) Mechanical Data .402(1.1) .386(0.9) • Case: Molded plastic,GBJ(5S/6KBJ) .425(10.8) + ~ ~ - .114(2.9) .165(4.2) .708(18.0) .098(2.5) .150(3.8) .669(17.0) .303(7.7) .287(7.3) .150(3.8) .134(3.4) .184(3.4) .122(3.1) .031(0.8) .023(0.6) .303(7.7) .287(7.3) • Epoxy: UL 94V-0 rate flame retardant • Terminals: Leads solderable per JESD22-B102, Meet JESD 201 class 2 whisker test • Mounting position: Any Absolute Maximum Ratings and Characteristics Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL GBJ3506 GBJ3508 GBJ3510 UNIT Maximum repetitive peak reverse voltage VRRM 600 800 1000 V Maximum RMS voltage VRMS 420 560 700 V Maximum DC blocking voltage VDC 600 800 1000 V Maximum average forward rectified current IF(AV) 35 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 350 A Rating for fusing (t<8.3ms) I2t 508 A2s Maximum instantaneous forward voltage (Note 1) @ 17.5 A VF PARAMETER Maximum reverse current @ rated VR TJ=25°C TJ=125°C Typical thermal resistance (Note 2) Operating junction temperature range Storage temperature range V 1.1 10 500 μA RθJC 0.6 °C/W TJ - 55 to +150 °C TSTG - 55 to +150 °C IR Note 1: Pulse test with PW=300μs, 1% duty cycle Note 2: With idea heatsink Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 1/2 http://www.thinkisemi.com/ ® GBJ3506 thru GBJ3510 RATINGS AND CHARACTERISTICS CURVES FIG.1 FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT (A) 40 35 30 25 20 15 10 RESISTIVE OR INDUCTIVE LOAD WITH HEATSINK 5 0 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT (A) (TA=25°C unless otherwise noted) FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 350 8.3ms Single Half Sine Wave 300 250 200 150 100 50 1 10 CASE TEMPERATURE (°C) FIG. 3 TYPICAL REVERSE CHARACTERISTICS FIG. 4 TYPICAL FORWARD CHARACTERISTICS 100 10 INSTANTANEOUS FORWARD A CURRENT (A) 100 INSTANTANEOUS REVERSE A CURRENT (μA) 100 NUMBER OF CYCLES AT 60 Hz TJ=125°C 1 0.1 TJ=25°C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 TJ=125°C 1 TJ=25°C 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE (V) FIG. 5 TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE (pF) A 1000 100 f=1.0MHz Vsig=50mVp-p 10 0.1 1 10 100 REVERSE VOLTAGE (V) Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 2/2 http://www.thinkisemi.com/