IPZ40N04S5-8R4 OptiMOS™-5 Power-Transistor Product Summary VDS 40 V RDS(on),max 8.4 mW ID 40 A Features • OptiMOS™ - power MOSFET for automotive applications PG-TSDSON-8 • N-channel - Enhancement mode - Normal Level • AEC Q101 qualified 1 • MSL1 up to 260°C peak reflow • 175°C operating temperature 1 • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPZ40N04S5-8R4 PG-TSDSON-8 5N0484 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions Value T C=25°C, V GS=10V1) 40 T C=100°C, V GS=10V2) 33 Unit A Pulsed drain current2) I D,pulse T C=25°C 160 Avalanche energy, single pulse2) E AS I D=20A 24 mJ Avalanche current, single pulse I AS - 40 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25°C 34 W Operating and storage temperature T j, T stg - -55 ... +175 °C Rev. 1.0 page 1 2015-05-06 IPZ40N04S5-8R4 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 4.4 Thermal resistance, junction ambient R thJA 6 cm2 cooling area3) - - 60 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 40 - - Gate threshold voltage V GS(th) V DS=V GS, I D=10µA 2.2 2.8 3.4 Zero gate voltage drain current I DSS V DS=40V, V GS=0V, T j=25°C - - 1 T j=125°C2) - - 100 V DS=40V, V GS=0V, V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=7V, I D=20A - 8.5 9.9 mW V GS=10V, I D=20A - 7.0 8.4 Rev. 1.0 page 2 2015-05-06 IPZ40N04S5-8R4 Parameter Symbol Values Conditions Unit min. typ. max. - 580 771 - 162 215 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 11 20 Turn-on delay time t d(on) - 3 - Rise time tr - 2 - Turn-off delay time t d(off) - 3 - Fall time tf - 2 - Gate to source charge Q gs - 2.8 3.7 Gate to drain charge Q gd - 2.4 3.6 Gate charge total Qg - 10.3 13.7 Gate plateau voltage V plateau - 4.9 - V - - 40 A - - 160 V GS=0V, V DS=25V, f =1MHz V DD=20V, V GS=10V, I D=40A, R G=3.5W pF ns Gate Charge Characteristics2) V DD=32V, I D=40A, V GS=0 to 10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current1) I S,pulse Diode forward voltage V SD V GS=0V, I F=20A, T j=25°C - 0.8 1.1 V Reverse recovery time1) t rr V R=20V, I F=40A, di F/dt =100A/µs - 30 - ns Reverse recovery charge1) Q rr - 20 - nC T C=25°C 1) Current is limited by package; with an R thJC = 4.4K/W the chip is able to carry 46A at 25°C. 2) The parameter is not subject to production test- verified by design/characterization. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2015-05-06 IPZ40N04S5-8R4 1 Power dissipation 2 Drain current P tot = f(T C); V GS = 10 V I D = f(T C); V GS = 10 V 50 40 40 30 30 ID [A] Ptot [W] 50 20 20 10 10 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 0.5 100 1 µs 100 0.1 0.05 ZthJC [K/W] ID [A] 10 µs 100 µs 0.01 10-1 single pulse 150 µs 10 10-2 1 10-3 0.1 1 10 100 VDS [V] Rev. 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2015-05-06 IPZ40N04S5-8R4 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 160 35 10 V 7V 4.5 V 30 5V 120 80 RDS(on) [mW] ID [A] 25 5.5 V 5.5 V 20 15 40 5V 10 7V 4.5 V 10 V 0 0 1 2 5 3 0 40 80 VDS [V] 120 160 ID [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 20 A; V GS = 10 V parameter: T j 160 14 12 120 RDS(on) [mW] ID [A] 10 80 8 6 40 4 175 °C 25 °C -55 °C 0 3 4 5 6 VGS [V] Rev. 1.0 2 -60 -20 20 60 100 140 180 Tj [°C] page 5 2015-05-06 IPZ40N04S5-8R4 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 3.5 3 VGS(th) [V] 2.5 C [pF] 100 µA 10 µA 103 Ciss Coss 2 1.5 102 1 Crss 0.5 101 0 -60 -20 20 60 100 140 0 180 10 20 30 VDS [V] Tj [°C] 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 100 103 IF [A] IAV [A] 102 25 °C 10 100 °C 175 °C 101 25 °C 150 °C 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.0 1 1 10 100 1000 tAV [µs] page 6 2015-05-06 IPZ40N04S5-8R4 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA 46 60 50 44 10 A VBR(DSS) [V] EAS [mJ] 40 30 42 40 20 A 20 38 40 A 10 36 0 25 75 125 -60 175 -20 Tj [°C] 20 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 40 A pulsed parameter: V DD 10 V GS 8V 32 V 9 Qg 8 7 VGS [V] 6 5 V g s(th) 4 3 2 Q g (th) Q sw Q gate 1 Q gs 0 0 2 4 6 8 10 Q gd 12 Qgate [nC] Rev. 1.0 page 7 2015-05-06 IPZ40N04S5-8R4 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2015 All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2015-05-06 IPZ40N04S5-8R4 Revision History Version Revision 1.0 Rev. 1.0 Date Changes 2015-05-06 Final Data Sheet page 9 2015-05-06