INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK4014，I2SK4014 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤2.0Ω. ·Enhancement mode: Vth = 2.0 to4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·DC-DC Converter, Relay Drive and Motor Drive Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 6 A IDM Drain Current-Single Pulsed 18 A PD Total Dissipation @TC=25℃ 45 W Tj Max. Operating Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(ch-c) Rth(ch-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 2.78 ℃/W 62.5 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK4014，I2SK4014 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA 900 VGS(th) Gate Threshold Voltage VDS= 10V; ID=1.0mA 2.0 RDS(on) Drain-Source On-Resistance VGS=10V; ID=3A IGSS Gate-Source Leakage Current IDSS VSDF TYP MAX UNIT V 4.0 V 2.0 Ω VGS= ±30V;VDS= 0V ±10 μA Drain-Source Leakage Current VDS=720V; VGS= 0V 100 μA Diode forward voltage IDR =6A, VGS = 0 V 1.7 V isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark