ON MTD1312 Nâ channel dpak power mosfet Datasheet

MTD1312
Advance Information
Power MOSFET
25 Amps, 30 Volts
N−Channel DPAK
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This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters, and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode Is Characterized for Use In Bridge Circuits
25 AMPERES
30 VOLTS
RDS(on) = 16 mΩ
N−Channel
D
G
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
Vdc
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
VDGR
30
Vdc
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 20
Vdc
Vpk
TJ, Tstg
− 55 to
150
°C
Operating and Storage Temperature Range
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
S
MARKING
DIAGRAM
4
1 2
3
YWW
MTD
1312
CASE 369A
DPAK
STYLE 2
Y
= Year
WW
= Work Week
MTD1312 = Device Code
PIN ASSIGNMENT
4
Drain
1
Gate
2
Drain
3
Source
ORDERING INFORMATION
Device
MTD1312T4
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
Package
Shipping
DPAK
2500 Tape & Reel
Publication Order Number:
MTD1312/D
MTD1312
POWER RATINGS (TC = 25°C unless otherwise specified)
Parameter
Drain Current − Continuous
Drain Current − Single Pulse (tp ≤ 10 ms)
Continuous Source Current (Diode Conduction)
Value
Unit
ID
IDM
25
75
Adc
Apk
IS
25
Adc
PD
72
Watts
RθJC
1.72
°C/W
Symbol
Value
Unit
ID
Adc
Apk
VGS = 10 Vdc
Total Power Dissipation @ TA = 25°C
Thermal Resistance
Symbol
Mounted on heat sink
TC = 25°C
Steady State
− Junction−to−Case
Parameter
Drain Current − Continuous
Drain Current − Single Pulse (tp ≤ 10 ms)
Mounted on minimum
recommended
FR−4 or G−10 board
IDM
6.0
18
IS
1.1
Adc
Total Power Dissipation @ TA = 25°C
VGS = 10 Vdc
PD
1.0
Watts
Thermal Resistance
Steady State
RθJA
118
°C/W
Continuous Source Current (Diode Conduction)
− Junction−to−Ambient
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Characteristics
Min
Typ
Max
30
−
(30)
−
−
−
−
−
1.0
(10)
−
−
500
1.0
−
1.4
(4.3)
2.0
−
−
−
10
14
16
20
−
5.4
−
Ciss
−
1110
1540
Coss
−
490
690
Crss
−
150
210
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Notes 1 & 3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate−Body Leakage Current
(VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/°C
μAdc
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (Notes 1 & 3)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Notes 1 & 3)
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
RDS(on)
Forward Transconductance
(VDS = 5.0 Vdc, ID = 1.0 Adc) (Note 1)
gFS
Vdc
mV/°C
mW
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Transfer Capacitance
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
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pF
MTD1312
ELECTRICAL CHARACTERISTICS − (continued) (TC = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
td(on)
−
8.0
16
ns
tr
−
45
90
td(off)
−
50
100
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 24 Vdc, ID = 20 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω) (Note 4)
Fall Time
Gate Charge
(VDS = 15 Vdc, ID = 10 Adc,
VGS = 10 Vdc) (Note 4)
tf
−
90
180
QT
−
35
50
Q1
−
3.5
−
Q2
−
10
−
Q3
−
−
−
−
−
0.81
(0.61)
1.0
−
trr
−
40
−
ta
−
20
−
tb
−
20
−
QRR
−
0.04
−
nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 10 Adc, VGS = 0 Vdc) (Note 4)
(IS = 10 Adc, VGS = 0 Vdc,
TJ = 125°C)
Reverse Recovery Time
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs) (Note 4)
Reverse Recovery Stored Charge
4. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
6. Reflects typical values.
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VSD
Vdc
ns
μC
MTD1312
TYPICAL ELECTRICAL CHARACTERISTICS
40
40
TJ = 25°C
10 V
VDS ≥ 10 V
35
6.0 V
3.3 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
35
30
25
4.5 V
20
3.7 V
15
VGS = 2.7 V
10
30
25
20
15
10
5.0
5.0
0
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
TJ = 125°C
−55 °C
0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.06
0.04
0.02
0
2.0
4.0
3.0
5.0
6.0
7.0
8.0
9.0
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE (OHMS)
R DS(on), DRAIN−TO−SOURCE RESISTANCE (OHMS)
ID = 10 A
TJ = 25°C
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.020
TJ = 25°C
VGS = 4.5 V
0.015
10 V
0.010
0.005
0
0
10
20
30
40
ID, DRAIN CURRENT (AMPS)
VGS, GATE−TO−SOURCE (VOLTS)
Figure 3. On−Resistance versus
Drain Current
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.0E−07
2.0
ID = 10 A
VGS = 10 V
TJ = 125°C
1.5
IDSS, LEAKAGE (AMPS)
R DS(on) , DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
1.0
Figure 2. Transfer Characteristics
0.10
0
0.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
0.08
25°C
1.0
0.5
100°C
1.0E−08
25°C
1.0E−09
VGS = 0 V
1.0E−10
0
−50
−25
0
25
50
75
100
125
0
150
TJ, JUNCTION TEMPERATURE (°C)
10
20
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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MTD1312
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge
controlled. The lengths of various switching intervals (Δt)
are determined by how fast the FET input capacitance can
be charged by current from the generator.
The published capacitance data is difficult to use for
calculating rise and fall because drain−gate capacitance
varies greatly with applied voltage. Accordingly, gate
charge data is used. In most cases, a satisfactory estimate of
average input current (IG(AV)) can be made from a
rudimentary analysis of the drive circuit so that
t = Q/IG(AV)
The capacitance (Ciss) is read from the capacitance curve at
a voltage corresponding to the off−state condition when
calculating td(on) and is read at a voltage corresponding to the
on−state when calculating td(off).
At high switching speeds, parasitic circuit elements
complicate the analysis. The inductance of the MOSFET
source lead, inside the package and in the circuit wiring
which is common to both the drain and gate current paths,
produces a voltage at the source which reduces the gate drive
current. The voltage is determined by Ldi/dt, but since di/dt
is a function of drain current, the mathematical solution is
complex. The MOSFET output capacitance also
complicates the mathematics. And finally, MOSFETs have
finite internal gate resistance which effectively adds to the
resistance of the driving source, but the internal resistance
is difficult to measure and, consequently, is not specified.
The resistive switching time variation versus gate
resistance (Figure 9) shows how typical switching
performance is affected by the parasitic circuit elements. If
the parasitics were not present, the slope of the curves would
maintain a value of unity regardless of the switching speed.
The circuit used to obtain the data is constructed to minimize
common inductance in the drain and gate circuit loops and
is believed readily achievable with board mounted
components. Most power electronic loads are inductive; the
data in the figure is taken with a resistive load, which
approximates an optimally snubbed inductive load. Power
MOSFETs may be safely operated into an inductive load;
however, snubbing reduces switching losses.
During the rise and fall time interval when switching a
resistive load, VGS remains virtually constant at a level
known as the plateau voltage, VSGP. Therefore, rise and fall
times may be approximated by the following:
tr = Q2 x RG/(VGG − VGSP)
tf = Q2 x RG/VGSP
where
VGG = the gate drive voltage, which varies from zero to VGG
RG = the gate drive resistance
and Q2 and VGSP are read from the gate charge curve.
During the turn−on and turn−off delay times, gate current is
not constant. The simplest calculation uses appropriate
values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
td(on) = RG Ciss In [VGG/(VGG − VGSP)]
td(off) = RG Ciss In (VGG/VGSP)
3500
VDS = 0 V
C, CAPACITANCE (pF)
3000
VGS = 0 V
Ciss
TJ = 25°C
2500
2000
Crss
1500
Ciss
1000
Coss
500
0
−10
Crss
−5.0
0
VGS
5.0
VDS
10
15
20
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
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25
30
12
1000
VDD = 24 V
ID = 20 A
VGS = 10 V
TJ = 25°C
QT
10
100
8.0
VGS
td(off)
t, TIME (ns)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
MTD1312
6.0
tr
10
4.0
Q1
Q2
tf
td(on)
ID = 10 A
TJ = 25°C
2.0
1.0
0
0
10
20
30
40
QG, TOTAL GATE CHARGE (nC)
1.0
10
RG, GATE RESISTANCE (OHMS)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
100
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
high di/dts. The diode’s negative di/dt during ta is directly
controlled by the device clearing the stored charge.
However, the positive di/dt during tb is an uncontrollable
diode characteristic and is usually the culprit that induces
current ringing. Therefore, when comparing diodes, the
ratio of tb/ta serves as a good indicator of recovery
abruptness and thus gives a comparative estimate of
probable noise generated. A ratio of 1 is considered ideal and
values less than 0.5 are considered snappy.
Compared to ON Semiconductor standard cell density
low voltage MOSFETs, high cell density MOSFET diodes
are faster (shorter trr), have less stored charge and a softer
reverse recovery characteristic. The softness advantage of
the high cell density diode means they can be forced through
reverse recovery at a higher di/dt than a standard cell
MOSFET diode without increasing the current ringing or the
noise generated. In addition, power dissipation incurred
from switching the diode will be less due to the shorter
recovery time and lower switching losses.
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse
recovery characteristics which play a major role in
determining switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier
device, therefore it has a finite reverse recovery time, trr, due
to the storage of minority carrier charge, QRR, as shown in
the typical reverse recovery wave form of Figure 14. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery
further increases switching losses. Therefore, one would
like a diode with short trr and low QRR specifications to
minimize these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current
ringing. The mechanisms at work are finite irremovable
circuit parasitic inductances and capacitances acted upon by
I S , SOURCE CURRENT (AMPS)
20
TJ = 25°C
VGS = 0 V
15
10
5.0
0
0
0.2
0.6
0.4
0.8
10
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
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MTD1312
100
ID , DRAIN CURRENT (AMPS)
Standard Cell Density
trr
I S , SOURCE CURRENT
High Cell Density
trr
tb
ta
100 ms
VGS = 10 V
SINGLE PULSE
TC = 25°C
10
1.0 ms
10 ms
dc
1.0
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
1.0
t, TIME
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Reverse Recovery Time (trr)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance −
General Data and Its Use.”
Switching between the off−state and the on−state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded, and that the
transition time (tr, tf) does not exceed 10 μs. In addition the
total power averaged over a complete switching cycle must
not exceed (TJ(MAX) − TC)/(RθJC).
A power MOSFET designated E−FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and must be adjusted for operating
conditions differing from those specified. Although industry
practice is to rate in terms of energy, avalanche energy
capability is not a constant. The energy rating decreases
non−linearly with an increase of peak current in avalanche
and peak junction temperature.
Although many E−FETs can withstand the stress of
drain−to−source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 13). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
EAS , SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
200
ID = 20 A
150
di/dt
IS
100
trr
ta
tb
TIME
50
0.25 IS
tp
0
25
50
75
100
125
TJ, STARTING JUNCTION TEMPERATURE (°C)
150
IS
Figure 14. Diode Reverse Recovery Waveform
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
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MTD1312
INFORMATION FOR USING THE DPAK SURFACE MOUNT PACKAGE
RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to ensure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.165
4.191
0.100
2.54
0.118
3.0
0.063
1.6
0.190
4.826
0.243
6.172
inches
mm
POWER DISSIPATION FOR A SURFACE MOUNT DEVICE
PD = 150°C − 25°C = 1.0 Watts
118°C/W
The power dissipation for a surface mount device is a
function of the drain pad size. These can vary from the
minimum pad size for soldering to a pad size given for
maximum power dissipation. Power dissipation for a
surface mount device is determined by TJ(max), the
maximum rated junction temperature of the die, RθJA, the
thermal resistance from the device junction to ambient, and
the operating temperature, TA. Using the values provided
on the data sheet, PD can be calculated as follows:
PD =
The 118°C/W for the DPAK package assumes the use of
the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 1.0 Watts. There are
other alternatives to achieving higher power dissipation
from the surface mount packages. One is to increase the
area of the drain pad. By increasing the area of the drain
pad, the power dissipation can be increased. Although one
can almost double the power dissipation with this method,
one will be giving up area on the printed circuit board
which can defeat the purpose of using surface mount
technology. For example, a graph of RθJA versus drain pad
area is shown in Figure 15.
TJ(max) − TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device. For a
DPAK device, PD is calculated as follows.
RθJA , THERMAL RESISTANCE, JUNCTION
TO AMBIENT (°C/W)
100
Board Material = 0.0625″
G−10/FR−4, 2 oz Copper
1.75 Watts
80
TA = 25°C
60
3.0 Watts
40
5.0 Watts
20
0
2
4
6
A, AREA (SQUARE INCHES)
8
10
Figure 15. Thermal Resistance versus Drain Pad
Area for the DPAK Package (Typical)
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MTD1312
Another alternative would be to use a ceramic substrate
or an aluminum core board such as Thermal Cladt. Using
a board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
SOLDER STENCIL GUIDELINES
pattern of the opening in the stencil for the drain pad is not
critical as long as it allows approximately 50% of the pad to
be covered with paste.
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads.
Solder stencils are used to screen the optimum amount.
These stencils are typically 0.008 inches thick and may be
made of brass or stainless steel. For packages such as the
SC−59, SC−70/SOT−323, SOD−123, SOT−23, SOT−143,
SOT−223, SO−8, SO−14, SO−16, and SMB/SMC diode
packages, the stencil opening should be the same as the pad
size or a 1:1 registration. This is not the case with the DPAK
and D2PAK packages. If one uses a 1:1 opening to screen
solder onto the drain pad, misalignment and/or
“tombstoning” may occur due to an excess of solder. For
these two packages, the opening in the stencil for the paste
should be approximately 50% of the tab area. The opening
for the leads is still a 1:1 registration. Figure 16 shows a
typical stencil for the DPAK and D2PAK packages. The
ÇÇ
ÇÇ
ÇÇ
ÇÇ
ÇÇÇÇÇÇ ÇÇ
ÇÇÇÇÇÇ ÇÇ
ÇÇÇ
ÇÇÇ
ÇÇÇÇÇÇ
SOLDER PASTE
OPENINGS
STENCIL
Figure 16. Typical Stencil for DPAK and
D2PAK Packages
SOLDERING PRECAUTIONS
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
* * Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
* * Due to shadowing and the inability to set the wave
height to incorporate other surface mount components, the
D2PAK is not recommended for wave soldering.
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MTD1312
TYPICAL SOLDER HEATING PROFILE
The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177−189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 17 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems but it is a good starting point. Factors that
can affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.
STEP 1
PREHEAT
ZONE 1
“RAMP”
200°C
STEP 2
STEP 3
VENT
HEATING
“SOAK” ZONES 2 & 5
“RAMP”
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
STEP 4
HEATING
ZONES 3 & 6
“SOAK”
160°C
STEP 5
STEP 6
STEP 7
HEATING
VENT
COOLING
ZONES 4 & 7
205° TO 219°C
“SPIKE”
PEAK AT
170°C
SOLDER
JOINT
150°C
150°C
100°C
140°C
100°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
5°C
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 17. Typical Solder Heating Profile
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MTD1312
PACKAGE DIMENSIONS
DPAK
CASE 369A−13
ISSUE AA
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
−T−
E
R
4
Z
A
S
1
2
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
INCHES
MIN
MAX
0.235
0.250
0.250
0.265
0.086
0.094
0.027
0.035
0.033
0.040
0.037
0.047
0.180 BSC
0.034
0.040
0.018
0.023
0.102
0.114
0.090 BSC
0.175
0.215
0.020
0.050
0.020
−−−
0.030
0.050
0.138
−−−
STYLE 2:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.84
1.01
0.94
1.19
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.45
5.46
0.51
1.27
0.51
−−−
0.77
1.27
3.51
−−−
GATE
DRAIN
SOURCE
DRAIN
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MTD1312/D