Preliminary data IXGP12N60U1 VCES Low VCE(sat) IGBT with Diode IC VCE(sat) Combi Pack Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 24 A I C90 TC = 90°C 12 A I CM TC = 25°C, 1 ms 48 A SSOA (RBSOA) VGE = 15 V, T VJ = 125°C, RG = 150 Ω Clamped inductive load, L = 300 µH ICM = 20 @ 0.8 VCES A PC TC = 25°C 100 W Maximum Ratings -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md = = = Mounting torque with screw M3 Mounting torque with screw M3.5 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 4 g 300 °C 600 V 24 A 2.5 V TO-220 AB G C E G = Gate, E = Emitter, C = Collector, TAB = Collector Features International standard package JEDEC TO-220 AB IGBT with antiparallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode FRED) - soft recovery with low IRM l l l l l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = 750 µA, VGE = 0 V 600 VGE(th) IC = 250 µA, VGE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V VCE = 0 V, VGE = ±20 V VCE(sat) IC = ICE90, VGE = 15 V l l l l BVCES I GES Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies TJ = 25°C TJ = 125°C V l 5.5 V 250 2.5 µA mA ±100 nA l 2.5 V l Advantages Easy to mount with 1 screw Space savings (two devices in one package) Reduces assembly time and cost High power density l l © 1996 IXYS All rights reserved 92792D (9/96) IXGP12N60U1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs I C = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Cies Coes Cres VCE = 25 V, VGE = 0 V, f = 1 MHz Qg Qge Qgc IC = IC90, VGE = 15 V, VCE = 0.5 VCES td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff 4 Inductive load, TJ = 25°°C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 • VCES , RG = Roff = 150 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 • VCES , RG = Roff = 150 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG RthJC RthCK 8 S 750 125 30 pF pF pF 50 15 25 100 200 500 300 1.2 100 200 1 600 400 2 0.25 Reverse Diode (FRED) 70 25 45 nC nC nC ns ns ns ns mJ 700 500 2.0 ns ns mJ ns ns mJ 800 700 TO-220 AB Outline 1.25 K/W K/W Dim. A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 14.93 14.23 16.50 9.66 10.66 3.54 4.08 5.85 6.85 2.29 2.79 1.15 1.77 2.79 6.35 0.64 0.89 2.54 BSC 4.32 4.82 0.64 1.39 0.51 0.76 2.04 2.49 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 0.230 0.270 0.090 0.110 0.045 0.070 0.110 0.250 0.025 0.035 0.100 BSC 0.170 0.190 0.025 0.055 0.020 0.030 0.080 0.115 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90, VGE = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % I RM trr IF = IC90, VGE = 0 V, -diF/dt = 64 A/µs VR = 360 V TJ = 100°C IF = 1 A; -di/dt = 50 A/µs; VR = 30 V TJ = 25°C RthJC 1.75 2.5 150 35 V A ns 50 ns 2.5 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGP12N60U1 Fig. 1 Saturation Characteristics 20 18 80 9V IC - Amperes 14 12 10 8 7V 6 60 40 10 0 0 3 4 11V 30 2 2 13V 50 20 1 V GE = 15V 70 4 0 Output Characterstics T J = 25°C 90 11V 16 IC - Amperes 100 13V VGE=15V TJ = 25°C Fig. 2 5 9V 7V 0 2 4 6 8 VCE - Volts Fig. 4 1.4 VCE(sat) - Normalized 8 7 VCE - Volts Temperature Dependence of Output Saturation Voltage 1.5 T J = 25°C 9 6 5 4 IC = 20A 3 IC = 10A 2 IC = 5A 1 VGE = 15V IC = 20A 1.3 1.2 1.1 IC = 10A 1.0 0.9 0.8 IC = 5A 0.7 0 0.6 5 6 7 8 9 10 11 12 13 14 15 -50 -25 0 25 VGE - Volts Fig. 6 1.2 20 18 BV / VGE(th) - Normalized VCE = 10 V 16 14 12 10 8 T J = 25°C 6 T J = 125°C 4 TJ = - 40°C 2 0 0 1 2 3 4 5 6 7 8 9 1.1 75 100 125 150 Temperature Dependence of Breakdown and Threshold Voltage VGE(th) IC = 250µA 1.0 0.9 BV CES IC = 250µA 0.8 0.7 0.6 -50 10 VGE - Volts -25 0 25 50 75 TJ - Degrees C G © 1996 IXYS All rights reserved 50 TJ - Degrees C Fig. 5 Input Admittance IC - Amperes 18 20 VCE - Volts Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 10 10 12 14 16 N JNB 100 125 150 IXGP12N60U1 Fig.7 Gate Charge Fig.8 Turn-Off Safe Operating Area 15 100 V CE = 480V 13 IG = 10mA T J = 125°C 10 IC = 10A dV/dt < 3V/ns IC - Amperes VGE - Volts 11 9 7 5 1 0.1 3 1 0.01 0 10 20 30 40 50 0 100 Total Gate Charge - (nC) 200 300 400 500 600 VCE - Volts Fig.9 Capacitance Curves 800 Capacitance - pF 700 Cies f = 1MHz 600 500 400 300 200 Coes 100 Cres 0 0 5 10 15 20 25 V CE - Volts Thermal Response - K/W Fig.10 Transient Thermal Impedance 1.00 D=0.5 D=0.2 D=0.1 0.10 D=0.05 D=0.02 D=0.01 Single Pulse 0.01 10 -5 10 -4 10-3 10-2 10-1 10 0 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGP12N60U1 Fig.11 Maximum Forward Voltage Drop Fig.12 40 25 1000 TJ = 125°C IF = 8A 20 30 800 VFR 20 VFR - Volts 25 TJ = 100°C 15 10 TJ = 150°C 0 0.0 600 10 400 tfr 5 TJ = 25°C 5 15 0 0.5 1.0 1.5 2.0 2.5 0 50 100 Voltage Drop - Volts 150 200 250 200 0 300 diF/dt - A/µs Fig.13 Junction Temperature Dependence off IRM and Qr Fig.14 1.4 Reverse Recovery Charge 1.0 TJ = 100°C Qr - nanocoulombs Normalized IRM / Qr 1.2 1.0 0.8 IRM 0.6 Qr 0.4 VR = 350V 0.8 IF = 8A max 0.6 0.4 0.2 0.2 0.0 0.0 0 40 80 120 160 1 10 TJ - Degrees C 1000 diF /dt - A/µs Fig.15 Peak Reverse Recovery Current Fig.16 25 Reverse Recovery Time 400 T J = 100°C VR = 350V IF = 8A TJ = 100°C trr - nanoseconds 20 IRM - Amperes 100 max 15 10 5 0 VR = 350V 300 IF = 8A 200 100 0 0 100 200 diF /dt - A/µs © 1996 IXYS All rights reserved 300 400 0 100 200 diF /dt - A/µs 300 400 tfr - nanoseconds 35 Current - Amperes Peak Forward Voltage V FR and Forward Recovery Time t FR IXGP12N60U1 Fig.17 Diode Transient Thermal resistance junction to case 3.0 RthJC - K/W 2.0 1.0 0.1 0.001 0.01 0.1 1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025