IXYS IXGP12N60U1 Low vce(sat) igbt with diode combi pack Datasheet

Preliminary data
IXGP12N60U1 VCES
Low VCE(sat)
IGBT with Diode
IC
VCE(sat)
Combi Pack
Symbol
Test Conditions
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
I C25
TC = 25°C
24
A
I C90
TC = 90°C
12
A
I CM
TC = 25°C, 1 ms
48
A
SSOA
(RBSOA)
VGE = 15 V, T VJ = 125°C, RG = 150 Ω
Clamped inductive load, L = 300 µH
ICM = 20
@ 0.8 VCES
A
PC
TC = 25°C
100
W
Maximum Ratings
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
Md
=
=
=
Mounting torque with screw M3
Mounting torque with screw M3.5
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
4
g
300
°C
600 V
24 A
2.5 V
TO-220 AB
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
International standard package
JEDEC TO-220 AB
IGBT with antiparallel FRED in one
package
2nd generation HDMOSTM process
Low VCE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode FRED)
- soft recovery with low IRM
l
l
l
l
l
l
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC
= 750 µA, VGE = 0 V
600
VGE(th)
IC
= 250 µA, VGE = VGE
2.5
ICES
VCE = 0.8 • VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
= ICE90, VGE = 15 V
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l
l
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BVCES
I GES
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
TJ = 25°C
TJ = 125°C
V
l
5.5
V
250
2.5
µA
mA
±100
nA
l
2.5
V
l
Advantages
Easy to mount with 1 screw
Space savings (two devices in one
package)
Reduces assembly time and cost
High power density
l
l
© 1996 IXYS All rights reserved
92792D (9/96)
IXGP12N60U1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
I C = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
4
Inductive load, TJ = 25°°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 • VCES , RG = Roff = 150 Ω
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive load, TJ = 125°°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 • VCES , RG = Roff = 150 Ω
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
RthJC
RthCK
8
S
750
125
30
pF
pF
pF
50
15
25
100
200
500
300
1.2
100
200
1
600
400
2
0.25
Reverse Diode (FRED)
70
25
45
nC
nC
nC
ns
ns
ns
ns
mJ
700
500
2.0
ns
ns
mJ
ns
ns
mJ
800
700
TO-220 AB Outline
1.25 K/W
K/W
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Millimeter
Min. Max.
12.70 14.93
14.23 16.50
9.66 10.66
3.54
4.08
5.85
6.85
2.29
2.79
1.15
1.77
2.79
6.35
0.64
0.89
2.54
BSC
4.32
4.82
0.64
1.39
0.51
0.76
2.04
2.49
Inches
Min. Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
0.230 0.270
0.090 0.110
0.045 0.070
0.110 0.250
0.025 0.035
0.100
BSC
0.170 0.190
0.025 0.055
0.020 0.030
0.080 0.115
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
VF
IF = IC90, VGE = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I RM
trr
IF = IC90, VGE = 0 V, -diF/dt = 64 A/µs
VR = 360 V
TJ = 100°C
IF = 1 A; -di/dt = 50 A/µs; VR = 30 V TJ = 25°C
RthJC
1.75
2.5
150
35
V
A
ns
50 ns
2.5 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXGP12N60U1
Fig. 1 Saturation Characteristics
20
18
80
9V
IC - Amperes
14
12
10
8
7V
6
60
40
10
0
0
3
4
11V
30
2
2
13V
50
20
1
V GE = 15V
70
4
0
Output Characterstics
T J = 25°C
90
11V
16
IC - Amperes
100
13V
VGE=15V
TJ = 25°C
Fig. 2
5
9V
7V
0
2
4
6
8
VCE - Volts
Fig. 4
1.4
VCE(sat) - Normalized
8
7
VCE - Volts
Temperature Dependence
of Output Saturation Voltage
1.5
T J = 25°C
9
6
5
4
IC = 20A
3
IC = 10A
2
IC = 5A
1
VGE = 15V
IC = 20A
1.3
1.2
1.1
IC = 10A
1.0
0.9
0.8
IC = 5A
0.7
0
0.6
5
6
7
8
9
10 11 12 13 14 15
-50
-25
0
25
VGE - Volts
Fig. 6
1.2
20
18
BV / VGE(th) - Normalized
VCE = 10 V
16
14
12
10
8
T J = 25°C
6
T J = 125°C
4
TJ = - 40°C
2
0
0
1
2
3
4
5
6
7
8
9
1.1
75
100 125 150
Temperature Dependence of
Breakdown and Threshold Voltage
VGE(th)
IC = 250µA
1.0
0.9
BV CES
IC = 250µA
0.8
0.7
0.6
-50
10
VGE - Volts
-25
0
25
50
75
TJ - Degrees C
G
© 1996 IXYS All rights reserved
50
TJ - Degrees C
Fig. 5 Input Admittance
IC - Amperes
18 20
VCE - Volts
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
10
10 12 14 16
N
JNB
100 125 150
IXGP12N60U1
Fig.7 Gate Charge
Fig.8 Turn-Off Safe Operating Area
15
100
V CE = 480V
13
IG = 10mA
T J = 125°C
10
IC = 10A
dV/dt < 3V/ns
IC - Amperes
VGE - Volts
11
9
7
5
1
0.1
3
1
0.01
0
10
20
30
40
50
0
100
Total Gate Charge - (nC)
200
300
400
500
600
VCE - Volts
Fig.9 Capacitance Curves
800
Capacitance - pF
700
Cies
f = 1MHz
600
500
400
300
200
Coes
100
Cres
0
0
5
10
15
20
25
V CE - Volts
Thermal Response - K/W
Fig.10 Transient Thermal Impedance
1.00
D=0.5
D=0.2
D=0.1
0.10 D=0.05
D=0.02
D=0.01
Single Pulse
0.01
10 -5
10 -4
10-3
10-2
10-1
10 0
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXGP12N60U1
Fig.11 Maximum Forward Voltage Drop
Fig.12
40
25
1000
TJ = 125°C
IF = 8A
20
30
800
VFR
20
VFR - Volts
25
TJ = 100°C
15
10
TJ = 150°C
0
0.0
600
10
400
tfr
5
TJ = 25°C
5
15
0
0.5
1.0
1.5
2.0
2.5
0
50
100
Voltage Drop - Volts
150
200
250
200
0
300
diF/dt - A/µs
Fig.13 Junction Temperature Dependence
off IRM and Qr
Fig.14
1.4
Reverse Recovery Charge
1.0
TJ = 100°C
Qr - nanocoulombs
Normalized IRM / Qr
1.2
1.0
0.8
IRM
0.6
Qr
0.4
VR = 350V
0.8
IF = 8A
max
0.6
0.4
0.2
0.2
0.0
0.0
0
40
80
120
160
1
10
TJ - Degrees C
1000
diF /dt - A/µs
Fig.15 Peak Reverse Recovery Current
Fig.16
25
Reverse Recovery Time
400
T J = 100°C
VR = 350V
IF = 8A
TJ = 100°C
trr - nanoseconds
20
IRM - Amperes
100
max
15
10
5
0
VR = 350V
300
IF = 8A
200
100
0
0
100
200
diF /dt - A/µs
© 1996 IXYS All rights reserved
300
400
0
100
200
diF /dt - A/µs
300
400
tfr - nanoseconds
35
Current - Amperes
Peak Forward Voltage V FR and
Forward Recovery Time t FR
IXGP12N60U1
Fig.17 Diode Transient Thermal resistance junction to case
3.0
RthJC - K/W
2.0
1.0
0.1
0.001
0.01
0.1
1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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