FQD17N08L N-Channel QFET® MOSFET 80 V, 12.9 A, 100 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. • 12.9 A, 80 V, RDS(on) = 100 mΩ (Max.) @ VGS = 10 V, ID = 6.45 A • Low Gate Charge (Typ. 8.8 nC) • Low Crss (Typ. 29 pF) • 100% Avalanche Tested D D G S G D-PAK S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD17N08LTM 80 Unit V 12.9 A 8.2 A - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * dv/dt PD TJ, TSTG TL - Pulsed 51.6 A ± 20 V (Note 2) 100 mJ (Note 1) 12.9 A (Note 1) 4.0 6.5 2.5 mJ V/ns W 40 0.32 -55 to +150 W W/°C °C 300 °C (Note 1) (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC RJA Parameter FQD17N08LTM Thermal Resistance, Junction to Case, Max. 3.13 Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. ©2000 Fairchild Semiconductor Corporation FQD17N08L Rev. C1 Unit 1 110 oC/W 50 www.fairchildsemi.com FQD17N08L — N-Channel QFET® MOSFET November 2013 Part Number FQD17N08LTM Electrical Characteristics Symbol Package DPAK Top Mark FQD17N08L Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 80 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.08 -- V/°C VDS = 80 V, VGS = 0 V -- -- 1 µA IDSS Zero Gate Voltage Drain Current VDS = 64 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.0 -- 2.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 6.45 A VGS = 5 V, ID = 6.45 A -- 0.076 0.090 0.100 0.115 Ω gFS Forward Transconductance VDS = 25 V, ID = 6.45 A -- 11.7 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 400 520 pF -- 120 155 pF -- 29 37 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 40 V, ID = 16.5 A, RG = 25 Ω (Note 4) VDS = 64 V, ID = 16.5 A, VGS = 5 V (Note 4) -- 7 25 ns -- 290 590 ns -- 20 50 ns -- 75 160 ns -- 8.8 11.5 nC -- 2.0 -- nC -- 5.4 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 12.9 A ISM -- -- 51.6 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 12.9 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 55 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 16.5 A, dIF / dt = 100 A/µs -- 85 -- nC Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 0.83 mH, IAS = 12.9 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 16.5 A, di/dt ≤ 300 A/µs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. ©2000 Fairchild Semiconductor Corporation FQD17N08L Rev. C1 2 www.fairchildsemi.com FQD17N08L — N-Channel QFET® MOSFET Package Marking and Ordering Information VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V 1 10 ID , Drain Current [A] ID, Drain Current [A] Top : 1 10 150℃ 0 10 25℃ -55℃ ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ 0 10 ※ Notes : 1. VDS = 25V 2. 250μ s Pulse Test -1 -1 0 10 10 1 10 10 0 2 6 4 10 8 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics IDR , Reverse Drain Current [A] RDS(on) [Ω], Drain-Source On-Resistance 0.4 0.3 VGS = 5V 0.2 VGS = 10V 0.1 1 10 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 25℃ ※ Note : TJ = 25℃ -1 0 10 20 30 40 10 50 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1100 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 900 800 Capacitance [pF] 0.2 ID , Drain Current [A] VGS, Gate-Source Voltage [V] 0.0 700 600 Ciss 500 Coss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 400 300 Crss 200 100 10 VDS = 40V 8 VDS = 64V 6 4 2 ※ Note : ID = 16.5A 0 -1 10 0 10 0 1 10 Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor Corporation FQD17N08L Rev. C1 0 2 4 6 8 10 12 14 16 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQD17N08L — N-Channel QFET® MOSFET Typical Characteristics (Continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 6.45 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 15 Operation in This Area is Limited by R DS(on) 2 10 ID, Drain Current [A] ID, Drain Current [A] 12 100 μs 1 ms 1 10 10 ms DC 0 10 ※ Notes : 9 6 3 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 Figure 9. Maximum Safe Operating Area ZJC(t), Thermal Response [oC/W] 75 100 125 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 0 ※ N o te s : 1 . Z θ J C ( t) = 3 .1 3 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .2 0 .1 0 .0 5 10 PDM 0 .0 2 -1 0 .0 1 t1 s in g le p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ©2000 Fairchild Semiconductor Corporation FQD17N08L Rev. C1 4 www.fairchildsemi.com FQD17N08L — N-Channel QFET® MOSFET Typical Characteristics FQD17N08L — N-Channel QFET® MOSFET 200nF 12V VGS Same Type as DUT 50KΩ Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp Time tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2000 Fairchild Semiconductor Corporation FQD17N08L Rev. C1 5 www.fairchildsemi.com + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2000 Fairchild Semiconductor Corporation FQD17N08L Rev. C1 6 www.fairchildsemi.com FQD17N08L — N-Channel QFET® MOSFET DUT FQD17N08L — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO-252 (D-PAK), Molded, 3-Lead, Jedec TO-252 VAR. AB, Surface Mount Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO252-003 ©2000 Fairchild Semiconductor Corporation FQD17N08L Rev. C1 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2000 Fairchild Semiconductor Corporation FQD17N08L Rev. 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