MOTOROLA MHPM7A10E60DC3 Hybrid power module Datasheet

 Order this document
by MHPM7A10E60DC3/D
SEMICONDUCTOR TECHNICAL DATA
Integrated Power Stage
for 230 VAC Motor Drive
Motorola Preferred Device
This module integrates a 3–phase inverter, 3–phase rectifier,
brake, and temperature sense in a single convenient package. It is
designed for 1.0 hp general purpose 3–phase induction motor drive
applications. The inverter incorporates advanced insulated gate
bipolar transistors (IGBT) with integrated ESD protection Gate–
Emitter zener diodes and ultrafast soft (UFS) free–wheeling diodes
to give optimum performance. The solderable top connector pins
are designed for easy interfacing to the user’s control board.
• Short Circuit Rated 10 µs @ 125°C, 400 V
• Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)
• Compact Package Outline
• Access to Positive and Negative DC Bus
• Independent Brake Circuit Connections
• UL Recognition Pending
10 AMP, 600 VOLT
HYBRID POWER MODULE
ORDERING INFORMATION
Device
Voltage
Rating
Current
Rating
Equivalent
Horsepower
PHPM7A10E60DC3
600
10
1.0
CASE 464D–01
ISSUE O
MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Repetitive Peak Input Rectifier Reverse Voltage (TJ = 25°C to 150°C)
VRRM
900
V
IGBT Reverse Voltage
VCES
600
V
Gate-Emitter Voltage
VGES
± 20
V
Continuous IGBT Collector Current (TC = 80°C)
ICmax
10
A
Repetitive Peak IGBT Collector Current (1)
IC(pk)
20
A
Continuous Free–Wheeling Diode Current (TC = 25°C)
IFmax
10
A
Continuous Free–Wheeling Diode Current (TC = 80°C)
IF80
6.0
A
Repetitive Peak Free–Wheeling Diode Current (1)
IF(pk)
20
A
Average Converter Output Current (Peak–to–Average ratio of 10, TC = 95°C)
IOmax
20
A
IGBT Power Dissipation per die (TC = 95°C)
PD
17
W
Free–Wheeling Diode Power Dissipation per die (TC = 95°C)
PD
9.1
W
Junction Temperature Range
TJ
– 40 to +150
°C
Short Circuit Duration (VCE = 400 V, TJ = 125°C)
tsc
10
ms
VISO
2500
Vac
Operating Case Temperature Range
TC
– 40 to +95
°C
Storage Temperature Range
Tstg
– 40 to +150
°C
—
12
lb–in
Isolation Voltage, pin to baseplate
Mounting Torque — Heat Sink Mounting Holes
(1) 1.0 ms = 1.0% duty cycle
Preferred devices are Motorola recommended choices for future use and best overall value.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
IGBT
Device
Motorola
Motorola, Inc.
1998
Data
1
MHPM7A10E60DC3
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VF
—
0.92
1.1
V
Gate–Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V)
IGES
—
—
±20
mA
Collector–Emitter Leakage Current (VCE = 600 V, VGE = 0 V)
ICES
—
5.0
100
mA
DC AND SMALL SIGNAL CHARACTERISTICS
Input Rectifier Forward Voltage (IF = 10 A)
Gate–Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)
VGE(th)
4.0
6.0
8.0
V
Collector–Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V)
V(BR)CES
600
—
—
V
Collector–Emitter Saturation Voltage (IC = ICmax, VGE = 15 V)
VCE(sat)
—
2.0
2.4
V
Free–Wheeling Diode Forward Voltage (IF = IFmax, VGE = 0 V)
VF
1.7
2.0
2.3
V
Cies
—
1020
—
pF
QT
—
57
—
nC
Thermal Resistance — IGBT
RqJC
—
2.6
3.2
°C/W
Thermal Resistance — Free–Wheeling (Fast Soft) Diode
RqJC
—
4.8
6.0
°C/W
Thermal Resistance — Input Rectifier
RqJC
—
3.4
4.2
°C/W
VF
1.983
2.024
2.066
V
TCVF
—
–8.64
—
mV/°C
Input Capacitance (VGE = 0 V, VCE = 25 V, f = 1.0 MHz)
Input Gate Charge (VCE = 300 V, IC = ICmax, VGE = 15 V)
THERMAL CHARACTERISTICS, EACH DIE
TEMPERATURE SENSE DIODE
Forward Voltage (@ IF = 1.0 mA)
Forward Voltage Temperature Coefficient (@ IF = 1.0 mA)
2
Motorola IGBT Device Data
MHPM7A10E60DC3
TYPICAL CHARACTERISTICS
20
18
TJ = 125°C
IF, FORWARD CURRENT (AMPS)
IF, FORWARD CURRENT (AMPS)
20
15
25°C
10
5.0
TJ = 125°C
14
12
25°C
10
8.0
6.0
4.0
2.0
0
0
0
0.2
0.4
0.8
0.6
1.0
0
1.2
0.5
1.0
1.5
2.0
2.5
VF, FORWARD VOLTAGE (VOLTS)
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Forward Characteristics —
Input Rectifier
Figure 2. Forward Characteristics —
Free–Wheeling Diode
20
20
20 V
20 V
17.5 V
IC , COLLECTOR CURRENT (AMPS)
IC , COLLECTOR CURRENT (AMPS)
16
15 V
15
12.5 V
VGE = 10 V
10
0.5
TJ = 25°C
0
3.0
17.5 V
15 V
15
12.5 V
VGE = 10 V
10
0.5
TJ = 125°C
0
0
1.0
2.0
3.0
4.0
5.0
0
1.0
2.0
3.0
4.0
5.0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 3. Forward Characteristics, TJ = 25°C
Figure 4. Forward Characteristics, TJ = 125°C
+15 V
IG , GATE CLAMP DIODE CURRENT (mA)
5.0
MBRS1100T3
4.0
3.0
2.0
120 W
MC33153
RG(on)
1.0
20 W
0
–1.0
RG(off)
–2.0
TJ = 25°C
–3.0
–4.0
–5.0
–30
–20
–10
0
10
20
MBRS1100T3
MBRS1100T3
30
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Gate–Emitter Zener Diode
Clamp Characteristic
Motorola IGBT Device Data
Figure 6. Recommended Gate Drive Circuit
3
MHPM7A10E60DC3
TYPICAL CHARACTERISTICS
V F, FORWARD VOLTAGE @ 1 mA (VOLTS)
2.5
+15 V
R1
12.4 kW
A/D INPUT
14
MAXIMUM
TYPICAL
MINIMUM
2.0
1.5
1.0
TYPICAL
VF = 2.240 – 0.00864 T
MIN: 2.199 – 0.00864 T
MAX: 2.282 – 0.00864 T
0.5
0
20
0
15
40
60
80
100
140
120
160
T, TEMPERATURE (°C)
Figure 7. Recommended Temperature Sense
Bias Circuit
MOTOR OUTPUT
Figure 8. BAV99LT1 Temperature Sense Diode
Performance: VF = 2.59 – 7.31E–3 TC
BRAKE RESISTOR
U
R
V
S 3 PHASE INPUT
W
T
1
2
3
4
5
6
7
8
9
10
11
12
D7
D1
Q1
Q3
D3
D8
D10 D12
D9
D11 D13
Q5
D5
TEMP
SENSE
D14
Q2
D2
D4
24
R1
SENSE
RESISTOR
Q4
Q7
Q6
D6
23
22
R2
21
20
19
18
17
16
15
14
13
FILTER
R3
+
R NTC
C1
FILTER
Figure 9. Schematic of Module, Showing Pin–Out and
External Connections
4
Motorola IGBT Device Data
MHPM7A10E60DC3
KEEP–OUT ZONES (x4)
0.585
0.250
0.066
0.175
0.450
1.850
0.925
0.270
0.140
NON–PLATED
THRU–HOLE
PLATED THRU–HOLES (x24)
OPTIONAL NON–PLATED
THRU–HOLES FOR ACCESS
TO HEAT SINK MOUNTING
SCREWS (x2)
NOTES:
1. Package is symmetrical, except for a polarizing plastic post near pin 1,
indicated by a non–plated thru–hole in the footprint.
2. Dimension of plated thru–holes indicates finished hole size after plating.
3. Access holes for mounting screws may or may not be necessary depending on
assembly plan for finished product.
Figure 10. Package Footprint (Dimensions in Inches)
Motorola IGBT Device Data
5
MHPM7A10E60DC3
PACKAGE DIMENSIONS
A
AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. LEAD LOCATION DIMENSIONS (ie: P, Q, R, S...)
ARE TO THE CENTER OF THE LEAD.
Q 3 PL
U
Y 2 PL
1
B
2
3
4
5
6
7
8
9
10
11
MILLIMETERS
DIM MIN
MAX
A 111.51 112.52
B
50.93
51.94
C
12.32
13.59
D
0.89
1.65
E
8.64
9.65
F
0.13
0.64
G
5.97
6.73
H
46.48
47.50
J
0.41
1.22
K
16.26
17.27
L
3.71
4.72
M
5.46
6.48
N
10.92
11.94
P
37.60
38.60
Q
2.01
2.62
R
23.24
23.75
S
14.35
15.37
U
99.10 100.08
V
81.28
82.55
W
42.67
43.69
Y
5.15
5.77
X
11.30
12.07
AA
2.01
2.72
AB 16.26
17.27
12
H
P N
R
24
23
22
21
20
19
18
17
16
15
14
13
S
M
G 22 PL
4 PL
J
INCHES
MIN
MAX
4.390
4.430
2.005
2.045
0.485
0.535
0.035
0.065
0.340
0.380
0.005
0.025
0.235
0.265
1.830
1.870
0.016
0.048
0.640
0.680
0.146
0.186
0.215
0.255
0.430
0.470
1.480
1.520
0.079
0.103
0.915
0.935
0.565
0.605
3.900
3.940
3.200
3.240
1.680
1.720
0.203
0.227
0.445
0.475
0.079
0.107
0.640
0.680
F
DETAIL Z
DETAIL Z
24 PL
D 24 PL
AB
C
X
V
K
E
L
W
CASE 464D–01
ISSUE O
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6
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Motorola MHPM7A10E60DC3/D
IGBT Device Data
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