DTM4953 Dual P-Channel 30 V (D-S) MOSFET www.din-tek.jp FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedc - 30 VDS (V) RDS(on) () at VGS = - 10 V 0.046 RDS(on) () at VGS = - 4.5 V 0.078 ID (A) per leg -5.4 Configuration Dual • 100 % Rg and UIS Tested S1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View S2 G2 D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) SYMBOL LIMIT Drain-Source Voltage PARAMETER VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C ID TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Currenta Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa L = 0.1 mH TC = 25 °C Operating Junction and Storage Temperature Range - 3.8 IS -3 - 26 IAS - 17 PD TC = 125 °C V - 5.4 IDM EAS UNIT 14 3.3 1.1 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 110 RthJF 45 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mountb Junction-to-Foot (Drain) Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. 1 °C/W DTM4953 www.din-tek.jp SPECIFICATIONS (TC = 25 °C, unless otherwise noted) SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0 V, ID = - 250 μA - 30 - - VGS(th) VDS = VGS, ID = - 250 μA - 1.5 - 2.0 - 2.5 VDS = 0 V, VGS = ± 20 V IGSS - - ± 100 VGS = 0 V VDS = - 30 V - - -1 - - - 50 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = - 30 V, TJ = 125 °C VGS = 0 V VDS = - 30 V, TJ = 175 °C - - - 150 On-State Drain Currenta ID(on) VGS = - 10 V VDS- 5 V - 20 - - Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) gfs VGS = - 10 V ID = - 4.9 A - 0.035 0.045 VGS = - 10 V ID = - 4.9 A, TJ = 125 °C - - 0.066 VGS = - 10 V ID = - 4.9 A, TJ = 175 °C - - 0.076 VGS = - 4.5 V ID = - 3.7 A VDS = - 15 V, ID = - 4.9 A - 0.065 0.078 - 9 - - 557 670 - 126 190 V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 90 115 Total Gate Chargec Qg - 15 22 Gate-Source Chargec Qgs - 2.1 Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec VGS = 0 V VGS = - 10 V VDS = - 25 V, f = 1 MHz VDS = - 15 V, ID = - 4.9 A Qgd pF nC - 3.5 - f = 1 MHz 2.60 5.26 8.50 td(on) - 3 5 tr VDD = - 15 V, RL = 6.8 ID - 1 A, VGEN = - 10 V, Rg = 1 - 9 14 - 20 30 - 9 14 - - - 26 A - - 0.8 - 1.2 V Rg td(off) tf ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = - 2 A, VGS = 0 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 DTM4953 www.din-tek.jp TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 30 30 TC = 25 °C VGS = 10 V thru 6 V 24 VGS = 5 V ID - Drain Current (A) ID - Drain Current (A) 24 18 12 VGS = 4 V 6 18 12 6 TC = 125 °C VGS = 3 V TC = - 55 °C 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 10 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 10 0.15 8 0.12 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) Output Characteristics 6 TC = 25 °C 4 10 VGS = 4.5 V 0.09 0.06 0.03 2 VGS = 10 V TC = 125 °C TC = - 55 °C 0.00 0 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) 0 5 24 30 On-Resistance vs. Drain Current 1000 10 800 8 VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) Transfer Characteristics 12 18 ID - Drain Current (A) 6 Ciss 600 400 Coss 200 Crss ID = 4.9 A VDS = 15 V 6 4 2 0 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) 30 0 Capacitance 3 6 9 12 Qg - Total Gate Charge (nC) Gate Charge 3 15 DTM4953 www.din-tek.jp TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 ID = 4.9 A 10 1.7 VGS = 10 V IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.0 1.4 VGS = 4.5 V 1.1 TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 0.8 0.5 - 50 - 25 0.001 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 0.0 175 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 Source Drain Diode Forward Voltage On-Resistance vs. Junction Temperature 1.0 0.20 0.7 VGS(th) Variance (V) 0.25 0.15 0.10 TJ = 150 °C ID = 250 μA 0.4 ID = 5 mA 0.1 - 0.2 0.05 TJ = 25 °C - 0.5 - 50 - 25 0.00 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 0 50 75 100 Threshold Voltage - 30 - 32 25 TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage VDS - Drain-to-Source Voltage (V) RDS(on) - On-Resistance (Ω) 0.2 ID = 1 mA - 34 - 36 - 38 - 40 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 Drain Source Breakdown vs. Junction Temperature 4 125 150 175 DTM4953 www.din-tek.jp THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 IDM Limited ID - Drain Current (A) 10 100 μs 1 ms 1 Limited by RDS(on)* 0.1 0.01 0.01 10 ms BVDSS Limited TC = 25 °C Single Pulse 100 ms 1s 10 s, DC 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10- 4 10- 3 4. Surface Mounted 10- 2 10- 1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 5 100 600 DTM4953 www.din-tek.jp THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -1 10 -2 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 6 Package Information www.din-tek.jp SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 1 Application Note www.din-tek.jp RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index 1 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Legal Disclaimer Notice Disclaimer www.din-tek.jp ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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