DinTek DTM4953 Dual p-channel 30 v (d-s) mosfet trenchfet power mosfet Datasheet

DTM4953
Dual P-Channel 30 V (D-S) MOSFET
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FEATURES
PRODUCT SUMMARY
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedc
- 30
VDS (V)
RDS(on) () at VGS = - 10 V
0.046
RDS(on) () at VGS = - 4.5 V
0.078
ID (A) per leg
-5.4
Configuration
Dual
• 100 % Rg and UIS Tested

S1
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
G1
Top View
S2
G2
D1
D2
P-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
SYMBOL
LIMIT
Drain-Source Voltage
PARAMETER
VDS
- 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °C
ID
TC = 125 °C
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationa
L = 0.1 mH
TC = 25 °C
Operating Junction and Storage Temperature Range
- 3.8
IS
-3
- 26
IAS
- 17
PD
TC = 125 °C
V
- 5.4
IDM
EAS
UNIT
14
3.3
1.1
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
110
RthJF
45
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
PCB Mountb
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
1
°C/W
DTM4953
www.din-tek.jp
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS = 0 V, ID = - 250 μA
- 30
-
-
VGS(th)
VDS = VGS, ID = - 250 μA
- 1.5
- 2.0
- 2.5
VDS = 0 V, VGS = ± 20 V
IGSS
-
-
± 100
VGS = 0 V
VDS = - 30 V
-
-
-1
-
-
- 50
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = - 30 V, TJ = 125 °C
VGS = 0 V
VDS = - 30 V, TJ = 175 °C
-
-
- 150
On-State Drain Currenta
ID(on)
VGS = - 10 V
VDS- 5 V
- 20
-
-
Drain-Source On-State Resistancea
Forward Transconductanceb
RDS(on)
gfs
VGS = - 10 V
ID = - 4.9 A
-
0.035
0.045
VGS = - 10 V
ID = - 4.9 A, TJ = 125 °C
-
-
0.066
VGS = - 10 V
ID = - 4.9 A, TJ = 175 °C
-
-
0.076
VGS = - 4.5 V
ID = - 3.7 A
VDS = - 15 V, ID = - 4.9 A
-
0.065
0.078
-
9
-
-
557
670
-
126
190
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
-
90
115
Total Gate Chargec
Qg
-
15
22
Gate-Source Chargec
Qgs
-
2.1
Gate-Drain
Chargec
Gate Resistance
Turn-On Delay
Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
VGS = 0 V
VGS = - 10 V
VDS = - 25 V, f = 1 MHz
VDS = - 15 V, ID = - 4.9 A
Qgd
pF
nC
-
3.5
-
f = 1 MHz
2.60
5.26
8.50
td(on)
-
3
5
tr
VDD = - 15 V, RL = 6.8 
ID  - 1 A, VGEN = - 10 V, Rg = 1 
-
9
14
-
20
30
-
9
14
-
-
- 26
A
-
- 0.8
- 1.2
V
Rg
td(off)
tf

ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = - 2 A, VGS = 0 V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.




Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DTM4953
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
30
30
TC = 25 °C
VGS = 10 V thru 6 V
24
VGS = 5 V
ID - Drain Current (A)
ID - Drain Current (A)
24
18
12
VGS = 4 V
6
18
12
6
TC = 125 °C
VGS = 3 V
TC = - 55 °C
0
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
10
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
10
0.15
8
0.12
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)
Output Characteristics
6
TC = 25 °C
4
10
VGS = 4.5 V
0.09
0.06
0.03
2
VGS = 10 V
TC = 125 °C
TC = - 55 °C
0.00
0
0
1
2
3
4
VGS - Gate-to-Source Voltage (V)
0
5
24
30
On-Resistance vs. Drain Current
1000
10
800
8
VGS - Gate-to-Source Voltage (V)
C - Capacitance (pF)
Transfer Characteristics
12
18
ID - Drain Current (A)
6
Ciss
600
400
Coss
200
Crss
ID = 4.9 A
VDS = 15 V
6
4
2
0
0
0
5
10
15
20
25
VDS - Drain-to-Source Voltage (V)
30
0
Capacitance
3
6
9
12
Qg - Total Gate Charge (nC)
Gate Charge
3
15
DTM4953
www.din-tek.jp
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
ID = 4.9 A
10
1.7
VGS = 10 V
IS - Source Current (A)
RDS(on) - On-Resistance (Normalized)
2.0
1.4
VGS = 4.5 V
1.1
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.8
0.5
- 50 - 25
0.001
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
0.0
175
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source Drain Diode Forward Voltage
On-Resistance vs. Junction Temperature
1.0
0.20
0.7
VGS(th) Variance (V)
0.25
0.15
0.10
TJ = 150 °C
ID = 250 μA
0.4
ID = 5 mA
0.1
- 0.2
0.05
TJ = 25 °C
- 0.5
- 50 - 25
0.00
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
0
50
75
100
Threshold Voltage
- 30
- 32
25
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
VDS - Drain-to-Source Voltage (V)
RDS(on) - On-Resistance (Ω)
0.2
ID = 1 mA
- 34
- 36
- 38
- 40
- 50 - 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
4
125
150
175
DTM4953
www.din-tek.jp
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
ID - Drain Current (A)
10
100 μs
1 ms
1
Limited by RDS(on)*
0.1
0.01
0.01
10 ms
BVDSS Limited
TC = 25 °C
Single Pulse
100 ms
1s
10 s, DC
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 110 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10- 4
10- 3
4. Surface Mounted
10- 2
10- 1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
5
100
600
DTM4953
www.din-tek.jp
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -1
10 -2
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
6
Package Information
www.din-tek.jp
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
1
Application Note
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RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
1
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
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