NSC NM93C06LZEMT8 256-/1024-/2048-/4096-bit serial eeprom with zero power and extended voltage (2.7v to 5.5v) Datasheet

NM93C06LZ/C46LZ/C56LZ/C66LZ
256-/1024-/2048-/4096-Bit Serial EEPROM with Zero
Power and Extended Voltage (2.7V to 5.5V)
(MICROWIRE TM Bus Interface)
General Description
Features
The NM93C06LZ/C46LZ/C56LZ/C66LZ devices are 256/
1024/2048/4096 bits respectively, of CMOS non-volatile
electrically erasable memory divided into 16/64/128/256
16-bit registers. They are fabricated using National Semiconductor’s floating-gate CMOS process for high reliability
and low power consumption. These memory devices are
available in both SO and TSSOP packages for small space
considerations.
The serial interface that operates these EEPROMs is MICROWIRE compatible for simple interface to standard microcontrollers and microprocessors. There are 7 instructions that control these devices: Read, Erase/Write Enable,
Erase, Erase All, Write, Write All, and Erase/Write Disable.
The ready/busy status is available on the DO pin to indicate
the completion of a programming cycle.
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Less than 1.0 mA standby current
2.7V – 5.5V operation in all modes
Typical active current of 100 mA
Direct write: no erase before program
Reliable CMOS floating gate technology
MICROWIRE compatible serial I/O
Self-timed programming cycle
Device status indication during programming mode
40 years data retention
Endurance: 106 data changes
Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP
Block Diagram
TL/D/11778 – 1
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.
MICROWIRETM is a trademark of National Semiconductor Corporation.
C1996 National Semiconductor Corporation
TL/D/11778
RRD-B30M96/Printed in U. S. A.
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NM93C06LZ/C46LZ/C56LZ/C66LZ 256-/1024-/2048-/4096-Bit Serial EEPROM with Zero Power
and Extended Voltage (2.7V to 5.5V) (MICROWIRE Bus Interface)
September 1996
Connection Diagram
Pin Names
Dual-in-Line Package (N)
8-Pin SO (M8) and 8-Pin TSSOP (MT8)
Pin
TL/D/11778–2
Top View
See NS Package Number
N08E and M08A
Chip Select
SK
Serial Data Clock
DI
Serial Data Input
DO
Serial Data Output
GND
Ground
VCC
Power Supply
Ordering Information
Commercial Temperature Range (0§ C to a 70§ C)
Order Number
NM93C06LZN/NM93C46LZN
NM93C56LZN/NM93C66LZN
NM93C06LZM8/NM93C46LZM8
NM93C56LZM8/NM93C66LZM8
NM93C06LZMT8/NM93C46LZMT8
NM93C56LZMT8/NM93C66LZMT8
Extended Temperature Range (b40§ C to a 85§ C)
Order Number
NM93C06LZEN/NM93C46LZEN
NM93C56LZEN/NM93C66LZEN
NM93C06LZEM8/NM93C46LZEM8
NM93C56LZEM8/NM93C66LZEM8
NM93C06LZEMT8/NM93C46LZEMT8
NM93C56LZEMT8/NM93C66LZEMT8
Automotive Temperature Range (b40§ C to a 125§ C)
Order Number
NM93C06LZVN/NM93C46LZVN
NM93C56LZVN/NM93C66LZVN
NM93C06LZVM8/NM93C46LZVM8
NM93C56LZVM8/NM93C66LZVM8
NM93C06LZVMT8/NM93C46LZVMT8
NM93C56LZVMT8/NM93C66LZVMT8
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2
Description
CS
LOW VOLTAGE (2.7V s 4.5V) SPECIFICATIONS
Absolute Maximum Ratings (Note 1)
Operating Conditions
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
b 65§ C to a 150§ C
Ambient Storage Temperature
Ambient Operating Temperature
NM93C06LZ/46LZ/56LZ/66LZ
0§ C to a 70§ C
NM93C06LZE/46LZE/56LZE/66LZE b40§ C to a 85§ C
NM93C06LZV/46LZV/56LZV/66LZV b40§ C to a 125§ C
All Input or Output Voltage
with Respect to Ground
Power Supply (VCC) Range
Lead Temperature (Soldering, 10 sec.)
ESD Rating
2.7V to 4.5V
VCC a 1 to b0.3V
a 300§ C
2000V
DC and AC Electrical Characteristics
Part Number
Conditions
Max
Units
ICC1
Symbol
Operating Current
CMOS Input Levels
Parameter
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
CS e VIH, SK e 250 kHz
1
1
mA
ICC3
Standby Current
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
CS e 0V
1
1
mA
IIL
Input Leakage
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
VIN e 0V to VCC
b 100
a 100
nA
IOL
Output Leakage
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
VIN e 0V to VCC
b 100
a 100
nA
VIL2
Input Low Voltage
2V s VCC s 4.5V
b 0.1
0.15 VCC
V
VIH2
Input High Voltage
2V s VCC s 4.5V
0.8 VCC
VCC a 1
V
VOL2
Output Low Voltage
IOL e 10 mA
VOH2
Output High Voltage
IOH e b10 mA
fSK
SK Clock Frequency
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
tSKH
SK High Time
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
(Note 2)
1
1
ms
tSKL
SK Low Time
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
(Note 2)
1
1
ms
tSKS
SK Setup Time
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
Relative to CS
50
50
ms
tCS
Minimum CS Low Time
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
(Note 3)
1
1
ms
tCSS
CS Setup Time
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
Relative to SK
0.2
0.2
ms
tDH
DO Hold Time
Relative to SK
70
ns
tDIS
DI Setup Time
Relative to SK
0.4
0.4
ms
tCSH
CS Hold Time
Relative to SK
0
ms
tDIH
DI Hold Time
Relative to SK
0.4
tPD1
Output Delay to ‘‘1’’
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
AC Test
2
2
ms
tPD0
Output Delay to ‘‘0’’
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
AC Test
2
2
ms
tSV
CS to Status Valid
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
AC Test
1
1
ms
tDF
CS to DO
in TRI-STATEÉ
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
AC Test
CS e VIL
0.4
0.4
ms
tWP
Write Cycle Time
NM93C06/46/56/66LZ
VCC e 2.7V
15
ms
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
3
Min
0.2
0.9 VCC
0
0
V
V
250
250
kHz
ms
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STANDARD VOLTAGE (4.5V s VCC s 5.5V) SPECIFICATIONS
Absolute Maximum Ratings (Note 1)
Operating Conditions
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
b 65§ C to a 150§ C
Ambient Storage Temperature
Ambient Operating Temperature
NM93C06LZ/46LZ/56LZ/66LZ
0§ C to a 70§ C
NM93C06LZE/46LZE/56LZE/66LZE b40§ C to a 85§ C
NM93C06LZV/46LZV/56LZV/66LZV b40§ C to a 125§ C
All Input or Output Voltage
with Respect to Ground
Power Supply (VCC) Range
Lead Temperature (Soldering, 10 sec.)
ESD Rating
4.5V to 5.5V
VCC a 1 to b0.3V
a 300§ C
2000V
DC and AC Electrical Characteristics: 4.5V s VCC s 5.5V
Part Number
Conditions
Max
Units
ICC1
Symbol
Operating Current
CMOS Input Levels
Parameter
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
CS e VIH, SK e 1 MHz
SK e 1 MHz
2
2
mA
ICC2
Operating Current
TTL Input Levels
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
CS e VIH, SK e 1 MHz
3
3
mA
ICC3
Standby Current
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
CS e 0V
50
50
mA
IIL
Input Leakage
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
VIN e 0V to VCC
b 2.5
b 10
2.5
10
nA
IOL
Output Leakage
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
VIN e 0V to VCC
b 2.5
b 10
2.5
10
nA
VIL
Input Low Voltage
b 0.1
0.8
V
VIH
Input High Voltage
2
VCC a 1
V
VOL1
Output Low Voltage
0.4
0.4
V
VOH1
Output High Voltage
VOL2
Output Low Voltage
VOH2
Output High Voltage
fSK
SK Clock Frequency
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
0
0
tSKH
SK High Time
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
250
300
ns
tSKL
SK Low Time
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
250
250
ns
tCS
Minimum CS Low Time
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
(Note 3)
250
250
ns
tCSS
CS Setup Time
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
Relative to SK
50
50
ns
tDH
DO Hold Time
Relative to SK
70
ns
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NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
IOL e 2.1 mA
IOH e 2.1 mA
IOL e b400 mA
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
2.4
IOL e 10 mA
IOH e b10 mA
4
Min
V
0.2
0.9 VCC
V
V
1
1
MHz
STANDARD VOLTAGE (4.5V s VCC s 5.5V) SPECIFICATIONS (Continued)
DC and AC Electrical Characteristics VCC e 5.0V g 10% unless otherwise specified (Continued)
Symbol
Parameter
Part Number
Conditions
Min
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
Relative to SK
100
200
Max
Units
ns
Relative to SK
0
ns
Relative to SK
20
tDIS
DI Setup Time
tCSH
CS Hold Time
tDIH
DI Hold Time
tPD1
Output Delay to ‘‘1’’
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
AC Test
500
500
ns
tPD0
Output Delay to ‘‘0’’
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
AC Test
500
500
ns
tSV
CS to Status Valid
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
AC Test
500
500
ns
tDF
CS to DO in TRI-STATE
NM93C06/46/56/66LZ
NM93C06/46/56/66LZE/V
AC Test
CS e VIL
100
100
ns
tWP
Write Cycle Time
10
ms
ns
AC Test Conditions
Output Load: 1 TTL Gate and CL e 100 pF
VCC Range
AC Test Conditions
4.5V k VCC k 5.5V
Input Pulse Levels
0.8V and 2.0V
Timing Measurement Level (VIL/VIH)
0.9V and 1.9V
Timing Measurement Level (VOL/VOH) 0.8V and 2.0V
(TTL Load Condition:
IOL e 2.1 mA, IOH e b0.4 mA)
2.7V k VCC k 4.5V
Input Pulse Levels
0.3V and 0.8 VCC
Timing Measurement Level (VIL/VIH)
0.4V and 1.6V
Timing Measurement Level (VOL/VOH) 0.8V and 1.6V
(CMOS Load Condition:
IOL e 10 mA, IOH e b10 mA)
Capacitance TA e 25§ C, f e 1 MHz
Test
Max
Units
COUT
Symbol
Output Capacitance
5
pF
CIN
Input Capacitance
5
pF
Note 1: Stress above those listed under ‘‘Absolute Maximum Ratings’’ may cause permanent damage to the device. This is a stress rating only, and functional
operation of the device at these or any other conditions above those indicated in the operational sections of the specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note 2: Minimum VCC requirements: All functional modes are guaranteed to full operation at VCC t 2V except the bulk programming op-codes ERAL and WRAL.
These are regarded as test mode commands and are only guaranteed to VCC t 2.5V.
Note 3: CS must be brought low for a minimum of 1 tCS between consecutive instruction cycles.
5
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Functional Description
Write (WRITE): The WRITE instruction is followed by 16
bits of data to be written into the specified address. After the
last bit of data is put on the data-in (DI) pin, CS must be
brought low before the next rising edge of the SK clock.
This falling edge of CS initiates the self-timed programming
cycle. The DO pin indicates the READY/BUSY status of the
chip if CS is brought high after a minimum of 250 ns (tCS).
DO e logical 0 indicates that programming is still in progress. DO e 1 indicates that the register at the address
specified in the instruction has been written with the data
pattern specified in the instruction and the part is ready for
another instruction.
Erase All (ERAL): The ERAL instruction will simultaneously
program all registers in the memory array and set each bit to
the logical ‘‘1’’ state. The Erase All cycle is identical to the
ERASE cycle except for the different op code. As in the
ERASE mode, the DO pin indicates the READY/BUSY
status of the chip. The ERASE ALL instruction is not required, see note below.
Write All (WRAL): The WRAL instruction will simultaneously program all registers with the data pattern specified in the
instruction. As in the WRITE mode, the DO pin indicates the
READY/BUSY status of the chip.
Erase/Write Disable (EWDS): To protect against accidental data disturb, the (EWDS) instruction disables all programming modes and should follow all programming operations. Execution of a READ instruction is independent of
both the EWEN and EWDS instructions.
The NM93C06/C46/C56/C66LZ devices have 7 instructions as described below. Note that the MSB of any instruction is a ‘‘1’’ and is viewed as a start bit in the interface
sequence. For the C06LZ and C46LZ the next 8 bits carry
the op code and the 6-bit address for register selection. For
the C56LZ and C66LZ the next 10 bits carry the op code
and the 8-bit address for register selection.
Read (READ): The READ instruction outputs serial data on
the DO pin. After the READ instruction is received, the instruction and address are decoded, followed by data transfer from the selected memory register into a serial-out shift
register. A dummy bit (logical 0) precedes the 16-bit data
output string. Output data changes are initiated by a low to
high transition of the SK clock.
Erase/Write Enable (EWEN): When VCC is applied to the
part, it powers up in the Erase/Write Disable (EWDS) state.
Therefore, all programming modes must be preceded by an
Erase/Write Enable (EWEN) instruction. Once an Erase/
Write Enable instruction is executed, programming remains
enabled until an Erase/Write Disable (EWDS) instruction is
executed or until VCC is removed from the part.
Erase (ERASE): The ERASE instruction will program all bits
in the specified register to the logical ‘‘1’’ state. CS is
brought low following the loading of the last address bit.
This falling edge of the CS pin initiates the self-timed programming cycle.
The DO pin indicates the READY/BUSY status of the chip.
DO e logical ‘‘0’’ indicates that programming is still in progress. DO e logical ‘‘1’’ indicates that the register, at the
address specified in the instruction, has been erased, and
the part is ready for another instruction.
Note: The NM93C06/C46/C56/C66LZ devices do not require an ‘‘ERASE’’
or ‘‘ERASE ALL’’ prior to the ‘‘WRITE’’ or ‘‘WRITE ALL’’ instructions.
Instruction Set for the NM93C06LZ and NM93C46LZ
Instruction
SB
Op Code
Address
Data
Comments
READ
1
10
A5–A0
Read data stored in memory, at specified address
EWEN
1
00
11XXXX
Write enable must precede all programming modes
EWDS
1
11
A5–A0
WRITE
1
01
A5–A0
ERAL
1
00
10XXXX
WRAL
1
00
01XXXX
EWDS
1
00
00XXXX
Erase register A5, A4, A3, A2, A1, A0
D15 – D0
Writes register
Erases all registers
D15 – D0
Writes all registers
Disables all programming instructions
Instruction Set for the NM93C56LZ and NM93C66LZ
Instruction
READ
SB
Op Code
Address
1
10
A7–A0
Data
Comments
Read data stored in memory, at specified address
EWEN
1
00
11XXXXXX
EWDS
1
11
A7–A0
ERAL
1
00
10XXXXXX
WRITE
1
01
A7–A0
D15 – D0
Write register if address is unprotected
WRAL
1
00
01XXXXXX
D15 – D0
Writes all registers
EWDS
1
00
00XXXXXX
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Write enable must precede all programming modes
Erase selected register
Erases all registers
Disables all programming instructions
6
Timing Diagrams
Synchronous Data Timing
TL/D/11778 – 3
² tSKS is not needed if DI e VIL when CS is going active (HIGH).
READ
TL/D/11778 – 4
*Address bits A5 and A4 become ‘‘don’t care’’ for NM93C06LZ.
Address bit A7 becomes a ‘‘don’t care’’ for NM93C56LZ.
EWEN
TL/D/11778 – 5
*The NM93C56LZ and NM93C66LZ require a minimum of 11 clock cycles. The NM93C06LZ and NM93C46LZ require a minimum of 9 clock cycles.
7
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Timing Diagrams (Continued)
EWDS
TL/D/11778 – 6
*The NM93C56LZ and NM93C66LZ require a minimum of 11 clock cycles. The NM93C06LZ and NM93C46LZ require a minimum of 9 clock cycles.
WRITE
TL/D/11778 – 7
*Address bits A5 and A4 become ‘‘don’t care’’ for NM93C06LZ.
Address bit A7 becomes a ‘‘don’t care’’ for NM93C56LZ.
WRAL
TL/D/11778 – 8
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8
Timing Diagrams (Continued)
ERASE
TL/D/11778 – 9
*Address bits A5 and A4 become ‘‘don’t care’’ for NM93C06LZ.
Address bit A7 becomes a ‘‘don’t care’’ for NM93C56LZ.
ERAL
TL/D/11778 – 10
9
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Physical Dimensions inches (millimeters) unless otherwise noted
Molded Small Out-Line Package (M8)
NS Package Number M08A
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10
Physical Dimensions inches (millimeters) unless otherwise noted (Continued)
Note: Unless otherwise specified
1. Reference JEDEC Registration M0-153, Variation AA, Dated 7/93
8-Pin Molded TSSOP, JEDEC (MT8)
NS Package Number MTC08
11
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NM93C06LZ/C46LZ/C56LZ/C66LZ 256-/1024-/2048-/4096-Bit Serial EEPROM with Zero Power
and Extended Voltage (2.7V to 5.5V) (MICROWIRE Bus Interface)
Physical Dimensions inches (millimeters) unless otherwise noted (Continued)
8-Lead Molded Dual-In-Line Package (N)
NS Package Number N08E
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