MA-COM MAAM12032 Gaas mmic low noise amplifier soic-8 platform Datasheet

Application Note
M540
GaAs MMIC Low Noise Amplifier SOIC-8 Platform
Rev. V3
Introduction
Early in 1994, M/A-COM began offering a family of
plastic packaged GaAs MMIC low noise amplifiers
(LNAs) featuring single positive supply voltage, low noise
figure, high dynamic range, and low power consumption
for the high volume commercial wireless communications
market. These MMIC LNAs use M/A-COM’s 0.5-micron,
low noise GaAs MESFET process and are housed in low
cost, 8-lead SOIC packages. These LNAs are tested in
M/A-COM’s volume automated facility to achieve low
production cost. The LNAs share a common ‘platform,’ a
product concept explained in the first major section
below, enabling fast development and delivery cycles.
This application note will show the user how to achieve
the performance in the product data sheets, i.e., how to
“get what we get,” and will answer some commonly
asked questions such as how performance varies over
bias.
This note also expands on the data sheet
information to show some interesting properties of the
MMIC LNAs for use in other applications and at slightly
different frequencies than those in the product data
sheet.
To allow the reader to use only those sections that are of
interest, the following is a brief synopsis of the major
sections of this application note:
GaAs MMIC LNA SOIC-8 Product Family: This section
discusses the ‘platform’ concept and gives an overview
of the salient features for each MMIC LNA.
MMIC LNA Product Design and Performance
Features: This section is a detailed look inside the
design, manufacturing, and reliability issues for these
GaAs MMIC LNAs.
MMIC LNA Product Customer Use Considerations:
This section discusses the issues of importance to the
customer in order to “get what we get “ in the data sheet.
MMIC LNA Product Applications: This section shows
additional performance features of the MMIC LNAs for
their designed applications, as well as performance
characteristics for other applications such as power
amplifier driver amplifiers and using off-chip tuning
networks to shift the frequency range of performance.
Performance Data & Recommended Board Layouts:
This section discusses the measurement data that is
available, evaluation samples, and printed circuit boards.
Conclusion: This section summarizes the application
note and gives names, addresses, and phone numbers
for worldwide support.
1
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
Glossary: This section defines the abbreviated terms and
acronyms used in this application note.
GaAs MMIC LNA SOIC-8 Product Family
The MMIC LNA SOIC-8 product family establishes a
‘platform’ for M/A-COM’s Integrated Circuits Business
Unit. A ‘platform’ is a proven product concept and
manufacturing methodology that translates core
competencies into product families which fulfill the needs
of strategic markets. The MMIC LNA SOIC-8 platform
products share some common attributes, namely:
Standard Circuit Design: All internal design blocks such
as low noise stage, gain stage, and biasing schemes are
based on proven design topologies.
Standard IC Fabrication: Only one fixed production IC
process is used; it has proven yields and well defined
SPC parameters.
Standard Manufacturing: All chips are assembled on
the same ISO-9001 certified manufacturing line in the
same SOIC-8 package.
The methods for product
assembly, test, qualification, in-line quality monitoring,
and documentation are identical for each device in the
platform.
The advantages of a platform approach to GaAs MMIC
product development are several. Using a common
design topology and methodology for similar products
means that many such products can be designed in
parallel-essentially a batch process-enabling fast
development times. The entire development cycle from
inception to preliminary release for the original five LNAs
(MAAM12021, MAAM12022, MAAM12031, MAAM12032,
and MAAM22010) in this platform took six months.
Additionally, these five LNAs are housed in one style
package, the SOIC-8, with identical pin assignments.
This commonality greatly simplifies the assembly,
fixturing, test, and documentation requirements.
Another advantage to the platform approach is that
derivative products, such as those with a different
frequency range or gain level, can be developed quickly
in one single design and manufacturing cycle; it is not
unusual to make the transition from concept to full
production in three months. Both the AM50-0001
and AM50-0002 LNAs are derivative products which
have benefited from the platform approach. The AM500001 is a higher dynamic range LNA in a lower frequency
band which utilizes the SOIC-8 platform design
methodology and has identical pin assignments to the
original LNAs.
The AM50-0002 combines design
topologies from the original LNAs to produce a higher
gain LNA in the SOIC-8 platform.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.4155721
• China Tel: +86.21.2407.1588
Application Note
M540
GaAs MMIC Low Noise Amplifier SOIC-8 Platform
Rev. V3
The present MMIC LNA product family consists of the
following products:
Part #
Intended
Market
Features
GPS, PDC
Frequency:
1.575 GHz
Gain:
27 dB
Noise Figure:
1.15 dB
Bias: 3-5V @ 20 mA
MAAM12021 GPS, PDC
Frequency: 1.5-1.6 GHz
Gain:
21 dB
Noise Figure:
1.55 dB
Bias: 3-5V @ 8 mA
MAAM12022 GPS, PDC
Frequency: 1.5-1.6 GHz
Gain:
14 dB
Noise Figure:
1.85 dB
Bias: 3-5 V @ 5 mA
AM50-0002
MAAM12031 PCN, PCS, Frequency: 1.7-2.0 GHz
PHS, DECT
Gain:
20 dB
DCS-1800 Noise Figure:
1.65 dB
Bias: 3-5 V @ 8 mA
MAAM12032 PCN, PCS
Frequency: 1.7-2.0 GHz
PHS, DECT
Gain:
13 dB
DCS-1800 Noise Figure:
1.8 dB
Bias: 3-5 V @ 5 mA
MAAM22010 ISM, WLAN
AM50-0001
GSM,
AMPS,
TACS
Frequency: 2.4-2.5 GHz
Gain:
14 dB
Noise Figure:
1.9 dB
Bias: 3-5 V @ 5 mA
Frequency: 0.8-1.0 GHz
Gain:
14 dB
Noise Figure:
1.5 dB
Output IP3:
+30 dBm
Bias: 5 V @ 50 mA
All these products are offered in industry standard
(JEDEC) SOIC-8 narrow body plastic packages.
MMIC LNA Product Design and
Performance Features
The GaAs MMIC LNAs discussed in this application note
were carefully designed, considering not only the electrical specifications but also ease and cost of manufacturing as well as quality and reliability. The following three
subsections discuss in detail the inner workings of these
MMIC LNAs in terms of circuit design, manufacturing,
and quality.
2
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MMIC Electrical Design Considerations
The key to any IC design is a well modeled stable
process to predict circuit performance. The MMIC LNAs
are based on M/A-COM’s mature 0.5-micron (μm) low
noise GaAs MESFET process. The active layer of the
GaAs substrate is formed using ion-implantation for high
throughput and low cost. A “buried-p” doping layer
combined with 0.5-μm T-gates results in high
performance MESFET’s; the fT of the process is 30 GHz
and the Fmin and Gmax at 12 GHz are 1.3 and 13 dB,
respectively. Every wafer is characterized for DC and
RF performance. Process control parameters, as well as
MIM capacitance, thin film resistance, and FET RF
equivalent circuit, are stored in a database. From this
database, a statistical circuit model is derived for
designers to use in optimizing their design for maximum
yield.
Another critical aspect in the success of this MMIC LNA
product family is the ability to model all aspects of the
product performance in the plastic packaging
environment. Quantifying the impact of the plastic
encapsulant on the electrical performance of the die for
both the FETs and spiral inductors was a significant
challenge. No less a challenge was the electrical circuit
modeling of the SOIC-8 package itself in terms of the self
and mutual inductances of the leads, bond wires, and
split paddle lead frame.
This extensive modeling of the MMIC elements (FETs,
MIM capacitors, thin film resistors, and spiral inductors),
bond wires, and plastic package effects has allowed M/
A-COM to predict with high confidence the performance
of these and other designs. Utilizing these models with
our statistical design methodology has allowed us to
achieve high performance, unconditionally stable LNAs
with high yield and, therefore, low cost. Figures 1 and 2
show the statistical distribution of the gain and noise
figure, respectively, for the MAAM12021.
In this product platform there are essentially two circuit
design types, a low gain (LG) and a high gain (HG). The
LG design (MAAM12022, MAAM12032, MAAM22010,
and AM50-0001), shown in Figure 3, employs a single
stage cascade configuration with series feedback to
simultaneously achieve impedance match and minimum
noise figure.
The HG design (MAAM12021 and
MAAM12031), shown in Figure 4, uses two cascaded
common source stages biased in series to achieve the
high gain at low current consumption, and also employs
series feedback to simultaneously achieve impedance
match and minimum noise figure.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.4155721
• China Tel: +86.21.2407.1588
Application Note
M540
GaAs MMIC Low Noise Amplifier SOIC-8 Platform
Rev. V3
The AM50-0002 employs a combination of the LG and
HG designs to create a three stage, higher gain, LNA.
The AM50-0002, however, uses a simple external input
matching network to obtain minimum noise figure. A
detailed discussion of this external matching network is
contained in the section on customer use considerations.
In this product platform there are essentially two circuit
design types, a low gain (LG) and a high gain (HG). The
LG design (MAAM12022, MAAM12032, MAAM22010,
and AM50-0001), shown in Figure 3, employs a single
stage cascade configuration with series feedback to simultaneously achieve impedance match and minimum
noise figure.
The HG design (MAAM12021 and
MAAM12031), shown in Figure 4, uses two cascaded
common source stages biased in series to achieve the
high gain at low current consumption, and also employs
series feedback to simultaneously achieve impedance
match and minimum noise figure. The AM50-0002 employs a combination of the LG and HG designs to create
a three stage, higher gain, LNA. The AM50-0002, however, uses a simple external input matching network to
obtain minimum noise figure. A detailed discussion of
this external matching network is contained in the section
on customer use considerations.
The MMIC layout of Figure 5 is the MAAM12021, the
largest chip of the family; it measures 1 mm on a side.
Figure 6 illustrates the assembly of this MMIC into the
SOIC-8 package. Immediately one notices that the lead
frame is split and there is more than one chip in the plastic package. The amplifier employs a custom fused split
paddle lead frame to ensure unconditional stability when
used on a typical FR4 board application. The other chip
in the package is a metal-nitride-silicon (MNS) singlelayer capacitor used for internal RF by-passing to allow
biasing from a single positive 3-5 V supply. These MNS
capacitors, supplied by M/A-COM’s Semiconductor Business Unit, have almost ideal performance for very little
cost. After assembly, the MAAM12021 has the functional diagram as shown in Figure 7. Six of the seven
LNAs in this product platform share these assembly and
functional diagrams. The AM50-0002 utilizes a slightly
different lead frame and pin assignment to accommodate
the special requirements of its three stage, high gain
design.
3
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MMIC Manufacturing Considerations
The MMIC LNAs are automatically assembled onto custom designed, fused, split paddle lead frames as shown
previously in Figure 6. Careful consideration is given to
die placement, both for the GaAs MMIC LNA and the
MNS capacitor, to ensure repeatable bond wire inductance and good mechanical strength for reliability. The
ground leads are fused to ensure low inductance
grounds as well as low thermal impedance. These fused
ground leads also lower cost in volume production by
eliminating eight ground bonds (2 per lead). Once assembled onto the lead frames, the assembly is transfer
molded with a plastic which has both good moisture resistance properties for reliability and well controlled dielectric constant for repeatable RF performance. Fully
assembled MMIC LNAs are stored in antistatic tubes,
ready for automatic test.
Fully assembled MMIC LNAs are 100% RF tested for
compliance against the guaranteed data sheet performance of gain, nose figure, and DC current. Standard
automatic digital IC testers have been modified to make
rapid RF measurements. Accuracy is maintained by
establishing correlation coefficients between the high
speed automated production testers and the highly accurate engineering measurement system.
Quality and Reliability
The MMIC LNA products are subjected to a one-time
product qualification, either before product releases or
when there is a major process change. In the case of
the MMIC LNAs, the one-time qualification, according to
Table 1, has established the MMIC LNA product family to
be capable of serving the high volume global commercial
electronics market with a 400-FIT reliability rate (300
devices at an activation energy of 0.7 eV, normal operating temperature of 85˚C, and 90% confidence level).
The MMIC LNAs are also ESD classified as low level
class 1—as low as 350 volts can induce damage. Table
2 shows the on-going quality monitoring of plastic packaged devices in production to maintain the established
level of product quality.
This 400-FIT reliability level is established at a junction
temperature of 150˚C or less. This is the reason for the
maximum rating on the data sheet of 150˚C or less. The
junction temperature can be calculated from the product
of the thermal resistance and power dissipated. The
thermal resistance for the MMIC LNAs is 165˚C/W on all
LNA’s, except for the AM50-0001 where it is 125˚C/W.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.4155721
• China Tel: +86.21.2407.1588
Application Note
M540
GaAs MMIC Low Noise Amplifier SOIC-8 Platform
Rev. V3
Sub
Lot
Operation
Condition
Qty.
Visual Inspection
General
500
Electrical Test
ATP at +25°C
500
Sub Lot Split
A
Electrical Test
ATP at -40,25,80°C
40
A
Infrared Reflow
Simulation
35 seconds above
235°C max 245°C
total of 180 seconds
392
A
Electrical Test
ATP at +25°C
392
Sub Lot Split
B
High Temperature
Operation Bias
150°C for 600 hrs
300
B
Electrical Test
ATP at 25°C
-40,25,80°C
280
20
C
Autoclave
96 hrs 100% RH 15
psi
76
C
Electrical Test
ATP at +25°C
76
D
Temperature Cycle
200 cycles -55 to
+150°C 30 min dwell
at extremes
96
D
Electrical
ATP at 25°C
-40,25,80°C
76
20
E
ESD Classification
MIL-STD-3015
6
F
DPA
REL-002
4
G
Physical Dimensions
100% of dimensions
coplanarity < 4 mils
22
G
Resistance to
Solvents
MIL-STD-2015
22
Table 1. One-time Product Qualification
Procedure
MMIC LNA Product Customer Use
Considerations
Customer Electrical Considerations
These MMIC LNAs were designed to be used on low cost
FR4 printed circuit boards. Before discussing the proper
board layout, an understanding of each of the pins of the
LNA family is necessary. All the products of the MMIC
LNA family have the same pin assignments, shown
previously in Figure 7, except for the AM50-0002, which
will be discussed separately below. Pins 1, 4, 5, an 8 are
DC and RF ground. Pins 3 and 6 are RFIN and RFOUT,
respectively. Pin 7 is VDD, a positive voltage, and pin 2 is
an optional bias control pin.
For nominal current
operation, no external connection is made to pin 2.
An important consideration is the off-chip components
used for DC biasing, Pin 7, the VDD pin, must be bypassed with a 500-pF surface mount MLC capacitor
mounted as close as possible to the pin. RF decoupling
of the power supply with a chip inductor of at least 15 nH
is recommended. Pin 2 is a parallel connection to the first
stage FET source resistor and is normally left open.
Connecting a chip resistor from pin 2 to ground will
increase the current draw and extend the dynamic range
of the LNAs as shown on the data sheets and discussed
below in the product applications section. For the low
gain MAAM12022, MAAM12032, and MAAM22010,
connecting a 30-35 ohm resistor from pin 2 to ground will
increase the current 20 mA from nominal 5 mA. For the
high gain MAAM12021 and MAAM12031, connecting a
35-40 ohm resistor from pin 2 to ground will increase the
current to 20 mA from the nominal 8 mA. For the higher
current AM50-0001, a resistor ranging from 10-40 ohms
can be used. For each of these six LNAs, care must be
taken so the maximum current rating on the data sheet is
not exceeded.
The AM50-0002 has DC and RF ground pins everywhere
except for pin 2, RFIN, and pin 6, which is both the RFOUT
and VDD. To realize minimum noise performance, the
AM50-0002 requires a simple low loss external input
matching network. Figure 8 shows the functional diagram
of the AM50-0002 and details the requirements of the
matching network at 1.575 GHz.
If the system does not provide the bias (VDD) on the RF
output line, the bias can be coupled to the RF output line
using a simple bias tee network. Please note that the
AM50-0002 has no optional bias pin.
The SOIC-8 MMIC LNAs are fairly straightforward to use.
By following some basic design considerations, the
performance in the data sheet is easily achieved. The
following sections discuss the electrical (DC and RF),
manufacturing, and reliability considerations the
customer must keep in mind for proper use of these
MMIC LNAs.
4
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.4155721
• China Tel: +86.21.2407.1588
Application Note
M540
GaAs MMIC Low Noise Amplifier SOIC-8 Platform
Rev. V3
The recommended PCB layout for this MMIC LNA product family, except the AM50-0002, is shown in Figure 9;
the AM50-0002 layout is in Figure 10. The main point of
both PCB layouts is, first and foremost, proper low inductance grounding. The use of plated through holes close
to and under package is strongly recommended. Board
thickness is a trade-off between RF transmission line
losses on thin boards and ground inductance and
transmission line width on thick boards; M/A-COM has
used RF board thicknesses from 0.008 to 0.032 inches
without significant change in RF performance.
Customer Manufacturing
Considerations
Most commercial microwave high volume applications
use automated soldering techniques. M/A-COM provides guidelines for surface mount board layout, solder
selection and screening, and reflow soldering temperature versus time profile in the application note “Surface
Mounting Instructions.”
Another manufacturing consideration is getting the heat
out of the package. With all of the MMIC LNAs, except
for the AM50-0001, the typical temperature rise is less
than 20˚C even with the higher current optional bias installed. However, care must be taken when using the
AM50-0001 not to exceed the 150˚C junction temperature maximum rating; with a thermal resistance of 125˚C/
W and an operating temperature of 85˚C, the maximum
power dissipation is 0.5 W.
Customer Quality and Reliability
There are two main areas of concern for the long term
reliability of these MMIC LNAs: heat from exceeding the
junction temperature maximum ratings and ESD. Thermal effects are relatively straightforward to correctnamely, provide adequate heat sinking. For all the
LNAs, except for the AM50-0001, a good RF ground will
provide sufficient heat sinking. For the AM50-0001, care
must be taken to provide an adequate thermal path, also.
MMIC LNA Product Applications
M/A-COM’s GaAs MMIC LNAs are intended to be used
in the receive chain as the first gain stage of a low noise,
high dynamic range receiver. They provide the requisite
gain, very low noise figure, high dynamic range, and very
low bias current at low cost. While the receive chain
applications for the MMIC LNA family are relatively obvious, these MMIC LNAs can provide unique solutions for
LO buffering, transmitter driver amplifiers, and a wide
variety of applications in addition to those depicted in the
data sheet. The following subsections describe a few
alternative applications for these MMIC LNAs.
MAAM12022 As An LO Buffer Amplifier
The MAAM12022 was originally designed as a GPC or
JDC receive MMIC LNA. However, if you bias the device
at 8 volts on pin 7 (VDD) and 20 mA through the use of an
external resistor of approximately 30 ohms from pin 2 to
ground, it becomes an excellent LO buffer amplifier. It
exhibits 16 dB gain, better tan 40 dB of reverse isolation,
and produces +14 dBm of output power at –1 dB gain
compression. The noise figure performance remains
essentially unchanged. The performance graphs of this
amplifier over bias are shown in Figures 11 and 12 for
gain and P1dB, respectively.
Five other LNAs in this platform share the capability to
increase gain and dynamic range through the use of an
external resistor from pin 2 to ground and higher bias
voltage. The increase in performance for the AM50-0001
is discussed below in a separate subsection. The other
two low gain LNAs, the MAAM12032 and MAAM2010,
will exhibit performance gains similar to those shown
above for the MAAM12022. The two high gain LNAs,
MAAM12021 and MAAM12031, will exhibit a gain increase of 2 dB and produce better than +14 dBm at -1
dB gain compression when biased at 8 V and 20 mA.
ESD is a major issue for customers to take seriously to
ensure long term reliability. As stated before, M/ACOM’s GaAs MMIC LNAs low level class 1 EST devices.
What this means is that ESD voltage as low as 350 volts
can damage the ICs. Remember , static kills; please do
as much as possible to eliminate ESD from the manufacturing floor.
5
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.4155721
• China Tel: +86.21.2407.1588
Application Note
M540
GaAs MMIC Low Noise Amplifier SOIC-8 Platform
Rev. V3
MAAM12022 over the 1.2 - 1.6 GHz
Frequency Range
Both the MAAM12021 and MAAM12022 can be tuned to
cover the 1.2 - 1.6 GHz frequency range with the addition
of some external matching networks. The matching networks to accomplish this for both LNAs are shown schematically in Figure 13. Distributed matching is shown,
although an equivalent lumped element approach would
also suffice. The gain performance of the MAAM12022
when matched using the distributed topology of Figure
13 is shown in Figure 14; the nose figure performance is
shown in Figure 15. For this LNA, the external matching
has even improved the noise figure in the original frequency range, but at the expense of input match in that
range.
External matching networks can be used to extend the
frequency range of all the LNAs in this product platform.
In fact, the AM50-0002 has been designed to require an
external matching network to achieve a good match and
minimum noise figure performance at the intended frequency. In some instances, as shown above for the
MAAM12022, it may be possible to improve the noise
figure of the LNA at the expense of input match. It is
also possible to combine external tuning with the bias
options described in the previous subsection to create
additional performance possibilities with these LNAs.
Performance Data & Recommended
Board Layouts
To facilitate ease of evaluation by the customer for either
alternative matching networks or to simulate system performance directly, de-embedded S-parameter and noise
parameter data is available for all members of the GaAs
MMIC LNA family discussed in this application note.
These data files are in DOS ASCII Touchstone® format.
Please note that not all biases of each device are available; please consult the factory. Additional performance
data, which is discussed in the product applications sections, is also available.
Another avenue for evaluating these MMIC LNAs is by
mounting the SOIC-8 to an FR4 board. A typical sample
board layout is shown in Figure 17. This sample board
accommodates the AM50-0002 and includes the recommended external input matching network for 1.575 GHz
operation. A similar sample board layout accommodates
the other six LNAs in this product platform. The .dxf files
for these layouts are available from the factory. Additionally, these sample boards, as well as LNA samples, can
be ordered from the factory.
AM50-0001 as A Transmit Driver
Amplifier
The AM50-0001 was originally designed for the cellular
industry as a high dynamic range, base station receive
amplifier with a noise figure of 1.5 dB and output IP3 of
+30 dBm. However, if VDD (pin 7) is set to 8 volts with
the same current drain of 50 mA, the AM50-0001 can put
out more than +20 dBm of power as shown in the output
power versus input power curve of Figure 16.
6
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.4155721
• China Tel: +86.21.2407.1588
Application Note
M540
GaAs MMIC Low Noise Amplifier SOIC-8 Platform
Rev. V3
IC
Conclusion
This application note was written to show the user how to
achieve the performance in the product data sheets, i.e.,
how to “get what we get.” Hopefully, this note has
answered some commonly asked questions and
expanded on the data sheet information to show some
interesting properties of the MMIC LNAs for not only the
intended applications of the products but also other
applications not immediately obvious from the data
sheet.
Please feel free to contact your local sales support
center telephoning:
North America
Telephone:
Fax:
Europe
Telephone:
Fax:
Asia/Pacific
Telephone:
AMPS
ASCII
DCS-1800
DECT
DOS
ESD, class 1
FET
FIT
Fmin
FR4
fT
GaAs
Gmax
GPS
GSM
IR
ISM
ISO-9001
JDC
JEDEC
L1
1-800-366-2266
1-800-618-8883
L2
+44 (1344) 869 595
+44 (1344) 300 020
LNA
LO
MESFET
+81 (03) 3226 1671
Glossary
.dxf
IP3
Drawing Interchange File: a standard
format for graphics software
Advanced Mobile Phone Service: an
800-MHz analog cellular system
American Standard Code for
Information Interchange
Digital Communication System: an
1800-MHz mobile cordless system
Digital European Cordless
Telecommunications: a 1900 MHz
system
Disk Operating System
Electrostatic Discharge: class 1 ranges
from 250 to 2000 volts
Field Effect Transistor
Failures In Time: a figure of merit for
reliability
Minimum Noise Figure
An epoxy fiberglass dielectric material
used for printed circuit boards
Frequency at which current gain
equals unity: a figure of merit for field
effect
transistors
Gallium Arsenide
Maximum Available Gai
MIM
MLC
MMIC
MNS
PCB
PCN
PCS
PDC
PHS
RF
SOIC-8
SPC
TACS
WLAN
Integrated Circuit
Third Order Intercept Point: a figure
of merit for intermodulation distortion
performance
Infrared
Industrial, Scientific, and Medical: 900
MHz, 2.4 & 5.8 GHz spread spectrum
applications
International Standards Organization
Quality Specification 9001
Japanese Digital Cellular - now known
as PDC (Personal Digital Cellular)
Joint Electron Device Engineering
Council
Global Positioning System band
centered at 1.575 GHz
Global Positioning System band
centered at 1.227 GHz
Low Noise Amplifier
Local Oscillator
Metal Semiconductor Field Effect
Transistor
Metal-Insulator-Metal
Multilayer Capacitor
Microwave Monolithic Integrated Circuit
Metal-Nitride-Semiconductor
Printed Circuit Board
Personal Communications Network
Personal Communications Service
Personal Digital Cellular: 900 and
1500 MHz systems
Personal Handy-phone Service: a
1900 MHz digital cordless system
Radio Frequency
Small Outline Integrated Circuit 8-Lead
Plastic Package
Statistical Process Control
Total Access Communications
a 900 MHz analog cellular system
Wireless Local Area Network
Global Positioning System
Global System for Mobile
Communications: a 900 MHz digital
cellular system
7
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