Semitech ESD5B5.0 Bi-directional configuration Datasheet

SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD
ESD5B5.0
Bi-dirctional Micro-Packaged
Transient Voltage Suppressor
Features
z
z
z
z
z
z
z
z
z
z
Small SOD-523 Package
Bi-directional Configurations
Peak Power Dissipation 50W @8 x 20 us Pulse
Low Leakage
Fast Response Time < 1 ns
Protects One Power or I/O Port
ESD Rating of Class 3 (>16KV) per Human Body Model
ESD Protection to IEC 61000-4-2 Level 4
ESD Protection to IEC 61000-4-2 Level 4
RoHS Compliant in Lead-Free Versions
Applications
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z
z
z
Communication Systems & Cellular Phones
Personal Digital Assistant (PDA)
Digital Cameras
Power Supplies
Absolute Maximum Ratings
Parameter
Symbol
Value
Units
PPK
50
W
Air
±30
KV
CONTACT
±30
KV
Per Human Body Model
16
KV
Per Machine Model
400
V
TSTG
-55 to 150
°C
TJ
-55 to 150
°C
Peak Power Dissipation (Note 1.) @TL = 25°C
IEC 61000-4-2 (ESD)
ESD Voltage
Storage Temperature Range
Operating Junction Temperature Range
1. 8 X 20 us, non–repetitive
ESD5B5.0
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
IT
Test Current
VBR
Breakdown Voltage @ IT
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
VRWM
(V)
IR(uA)
VBR (V)@ IT
@ VRWM
(Note 1)
Device
Max
Max
Min
Max
mA
Typ
ESD5B5.0
5.0
1.0
5.8
7.8
1.0
32
IT
*Surge current waveform per Figure 1.
1.
VBR is measured with a pluse test current IT at an ambient temperature of 25℃.
Fig1. Pulse Waveform
C(pF) @VR=0V
F = 1 MHz
ESD5B5.0
Fig2. Power Derating
Package Dimensions
SOD-523
Dim
Millimeters
Inches
MIN
NOM
MAX
MIN
NOM
MAX
A
1.10
1.20
1.30
0.043
0.047
0.051
B
0.70
0.80
0.90
0.028
0.032
0.035
C
0.50
0.60
0.70
0.020
0.024
0.028
D
0.25
0.30
0.35
0.010
0.012
0.014
J
0.07
0.14
0.20
0.0028
0.0055
0.0079
K
0.15
0.20
0.25
0.006
0.008
0.010
S
1.50
1.60
1.70
0.059
0.063
0.067
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