PD- 96423A
AUTOMOTIVE GRADE
AUIRF7478Q
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
l
l
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
A
A
D
V(BR)DSS
7
D
RDS(on) typ.
3
6
D
4
5
D
S
1
8
S
2
S
G
Top View
60V
20mΩ
max. 26mΩ
ID
7.0A
Description
Specifically designed for Automotive applications, this
Cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety
of other applications.
SO-8
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
EAS
IAR
dv/dt
TJ
TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
c
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
f
c
d
h
Max.
Units
60
7.0
5.6
56
2.5
0.02
± 20
140
4.2
3.7
V
-55 to + 150
A
W
W/°C
V
mJ
A
V/ns
°C
300 (1.6mm from case)
Thermal Resistance
Parameter
RθJL
RθJA
Junction-to-Drain Lead
Junction-to-Ambient
f
Max.
Units
20
50
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
01/13/12
AUIRF7478Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
60
–––
–––
–––
1.0
17
–––
–––
–––
–––
––– –––
0.065 –––
20
26
23
30
–––
3.0
––– –––
–––
20
––– 100
––– 100
––– -100
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 4.2A
mΩ
VGS = 4.5V, ID = 3.5A
V VDS = VGS, ID = 250μA
S VDS = 50V, ID = 4.2A
VDS = 48V, VGS = 0V
μA
VDS = 48V, VGS = 0V, TJ = 125°C
VGS = 20V
nA
VGS = -20V
e
e
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Output Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
21
4.3
9.6
7.7
2.6
44
13
1740
300
37
1590
220
410
31
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
ns
pF
Conditions
ID = 4.2A
VDS = 48V
VGS = 4.5V
VDD = 30V
ID = 4.2A
RG = 6.2Ω
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, f =1.0MHz
VGS = 0V, VDS = 48V, f =1.0MHz
VGS = 0V, VDS = 0V to 48V
e
g
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISM
c
VSD
trr
Qrr
Min. Typ. Max. Units
–––
–––
2.3
–––
–––
56
–––
–––
–––
–––
52
100
1.3
78
150
Conditions
MOSFET symbol
A
V
ns
nC
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 4.2A, VGS = 0V
TJ = 25°C,IF = 4.2A
di/dt = 100A/μs
S
e
e
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 16mH
RG = 25Ω, IAS = 4.2A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
When mounted on 1 inch square copper board
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
ISD ≤ 4.2A, di/dt ≤ 160A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
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AUIRF7478Q
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
††
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
SO-8
MSL1
Class M3(+/- 300V )†††
(per AEC-Q101-002)
Human Body Model
ESD
Class H1C(+/- 2000V )†††
(per AEC-Q101-001)
Charged Device Model
Class C5(+/- 2000V )†††
(per AEC-Q101-005)
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
††
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
†††
Highest passing voltage
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3
AUIRF7478Q
100
100
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
10
2.7V
1
0.1
20μs PULSE WIDTH
TJ = 25 °C
1
10
10
2.5
10
T J = 25°C
VDS = 25V
20μs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (Α)
T J = 150°C
3.5
1
10
100
Fig 2. Typical Output Characteristics
100
3.0
20μs PULSE WIDTH
TJ = 150 °C
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
2.7V
1
0.1
100
VDS , Drain-to-Source Voltage (V)
2.5
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
TOP
4.0
ID = 7.0A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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AUIRF7478Q
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance(pF)
10000
Ciss
1000
Coss
100
Crss
10
VGS , Gate-to-Source Voltage (V)
100000
10
1
10
6
4
2
0
10
20
30
40
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150 ° C
100
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
VDS = 48V
VDS = 30V
VDS = 12V
8
0
100
ID = 4.2A
10
1
TJ = 25 ° C
0.1
0.2
V GS = 0 V
0.6
1.0
1.4
1.8
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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2.2
10us
10
100us
1ms
1
0.1
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRF7478Q
ID , Drain Current (A)
8.0
RD
V DS
6.0
V GS
D.U.T.
RG
+
-V DD
4.0
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
0.0
Fig 10a. Switching Time Test Circuit
25
50
75
100
125
150
TC , Case Temperature ( ° C)
VDS
90%
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
10%
VGS
tr
td(on)
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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0.028
RDS(on) , Drain-to -Source On Resistance ( Ω)
RDS (on) , Drain-to-Source On Resistance ( Ω)
AUIRF7478Q
0.026
0.024
VGS = 4.5V
0.022
0.020
0.018
VGS = 10V
0.016
0
10
20
30
40
50
0.04
0.03
ID = 7.0A
0.02
0.01
60
0.0
ID , Drain Current (A)
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
VGS, Gate -to -Source Voltage (V)
Fig 13. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
QG
.2μF
QGS
.3μF
D.U.T.
+
V
- DS
QGD
VG
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
400
TOP
BOTTOM
300
ID
1.9A
3.4A
4.2A
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
0.01Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
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A
EAS , Single Pulse Avalanche Energy (mJ)
VGS
50KΩ
12V
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
7
AUIRF7478Q
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
DIM
B
5
A
8
6
7
6
H
E
1
2
3
0.25 [.010]
4
A
MIN
.0532
.0688
1.35
1.75
A1 .0040
e
e1
8X b
0.25 [.010]
A
A1
MAX
0.25
.0098
0.10
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 B ASIC
e1
6X
MILLIMETERS
MAX
A
5
INCHES
MIN
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
y
0.10 [.004]
C A B
8X L
8X c
7
F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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AUIRF7478Q
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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9
AUIRF7478Q
Ordering Information
Base part
AUIRF7478Q
10
Package Type
SO-8
Standard Pack
Form
Tube
Tape and Reel
Complete Part Number
Quantity
95
4000
AUIRF7478Q
AUIRF7478QTR
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AUIRF7478Q
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated
with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product
discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale
supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration
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Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that
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and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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11