CHENMKO ENTERPRISE CO.,LTD CHFMG4PT SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-74A) SC-74A * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Both the CHDTC114T in one package. Built in bias resistor(R1=10kΩ, Typ. ) (1) (5) 0.95 1.7~2.1 2.7~3.1 0.95 (2) (3) 0.25~0.5 1.4~1.8 0.935~1.3 0.08~0.2 0~0.15 0.3~0.6 CIRCUIT 3 4 R1 5 2.6~3.0 R1 2 1 SC-74A Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VCC Supply voltage VIN Input voltage CONDITIONS MIN. − IO DC Output current IC(Max.) Tamb ≤ 25 OC, Note 1 MAX. UNIT 50 V -5 V − 100 − 100 − 200 mW O C mA PTOT Total power dissipation TSTG Storage temperature −55 +150 TJ Junction temperature − 150 O C Thermal resistance − 625 O C/W RθJ-S junction - Ambient Air Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-04 RATING CHARACTERISTIC ( CHFMG4PT) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 50 − − V 50 − − V IE=50uA 5.0 − − V Collector cutoff current VCB=50V − − 0.5 uA Emitter cutoff current VEB=4V − − 0.5 uA VCE(sat) Collector-emitter saturation voltage IC/IB=1mA/0.1mA − − 0.3 V hFE DC current gain IC=1mA; VCE=5.0V 100 250 600 R1 fT Input resistor Transition frequency 7.0 − 10.0 250 13.0 − BVCBO Collector-base breakdown voltage BVCEO Collector-emitter breakdown voltage IC=1.0mA BVEBO Emitter-base breakdown voltage ICBO IEBO Note 1.Pulse test: tp≤300uS; δ≤0.02. IC=50uA IE=-5mA, VCE=10.0V f=100MHz KΩ MHz RATING CHARACTERISTIC CURVES ( CHFMG4PT) Typical Electrical Characteristics Fig.1 Input voltage vs. output current (ON characteristics) Ta =- 25OC O 25 = C 75OC 1 100m 100m VO=0.2V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 10 Fig.2 Output current vs. input voltage (OFF characteristics) 0 10m 20m 30m 40m Ta= 75OC 25OC -25 OC 10m 1m 100u 10u 1u 50m VCC=5V 0 Fig.3 DC current gain vs. output current 100 Ta= 75 OC 25OC -25OC 10m OUTPUT CURRENT : IO (A) 3 4 5 6 1 VO =10V 10 10 1m 2 7 8 9 10 Fig.4 Output voltage vs. output current OUTPUT VOLTAGE : VO(on) (V) DC CURRENT GAIN : GI 1k 1 INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A) 100m 100m lO/lI=10 Ta= 75 OC 25OC -25 OC 10m 1m 0 10m 20m 30m 40m OUTPUT CURRENT : IO (A) 50m