ON BAS21LT1G High voltage switching diode Datasheet

BAS19LT1G, BAS20LT1G,
BAS21LT1G, BAS21DW5T1G
High Voltage
Switching Diode
Features
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• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
HIGH VOLTAGE
SWITCHING DIODE
MAXIMUM RATINGS
Rating
Symbol
Continuous Reverse Voltage
BAS19
BAS20
BAS21
Repetitive Peak Reverse Voltage
BAS19
BAS20
BAS21
VR
VRRM
Value
Unit
120
200
250
120
200
250
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
625
mAdc
TJ, Tstg
−55 to
+150
°C
PD
385
mW
ESD
HM < 500
V
MM < 400
V
Power Dissipation (Note 1)
Electrostatic Discharge
3
CATHODE
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
1
ANODE
SC−88A
5
1
CATHODE
ANODE
Vdc
Continuous Forward Current
Junction and Storage Temperature
Range
SOT−23
Vdc
4
CATHODE
3
ANODE
MARKING DIAGRAMS
3
3
Jx M G
G
1
2
SOT−23 (TO−236)
CASE 318
STYLE 8
1
2
5
Jx M G
G
3
1
SC−88A (SOT−353)
CASE 419A
4
1
2
3
x
= P, R, or S
P
= BAS19LT1
R
= BAS20LT1
S
= BAS21LT1 or BAS21DW5T1
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon the manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 12
1
Publication Order Number:
BAS19LT1/D
BAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G
THERMAL CHARACTERISTICS (SOT−23)
Characteristic
Total Device Dissipation FR−5 Board
(Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance
Junction−to−Ambient (SOT−23)
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
°C/W
−55 to +150
°C
Symbol
Max
Unit
PD
385
mW
328
3.0
°C/W
mW/°C
TJmax
150
°C
TJ, Tstg
−55 to +150
°C
RJA
Total Device Dissipation Alumina Substrate
(Note 3)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance Junction−to−Ambient
RJA
Junction and Storage
Temperature Range
TJ, Tstg
THERMAL CHARACTERISTICS (SC−88A)
Characteristic
Power Dissipation (Note 4)
Thermal Resistance −
Junction−to−Ambient
Derate Above 25°C
RJA
Maximum Junction Temperature
Operating Junction and Storage Temperature Range
2. FR−5 = 1.0
0.75
0.062 in.
3. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Voltage Leakage Current
(VR = 100 Vdc)
(VR = 150 Vdc)
(VR = 200 Vdc)
(VR = 100 Vdc, TJ = 150°C)
(VR = 150 Vdc, TJ = 150°C)
(VR = 200 Vdc, TJ = 150°C)
BAS19
BAS20
BAS21
BAS19
BAS20
BAS21
Reverse Breakdown Voltage
(IBR = 100 Adc)
(IBR = 100 Adc)
(IBR = 100 Adc)
BAS19
BAS20
BAS21
IR
V(BR)
Min
Max
−
−
−
−
−
−
0.1
0.1
0.1
100
100
100
120
200
250
−
−
−
−
−
1.0
1.25
Unit
Adc
Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
Diode Capacitance (VR = 0, f = 1.0 MHz)
CD
−
5.0
pF
Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100)
trr
−
50
ns
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2
Vdc
BAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G
820 +10 V
2.0 k
IF
100 H
tr
0.1 F
tp
IF
t
trr
10%
t
0.1 F
90%
D.U.T.
50 INPUT
SAMPLING
OSCILLOSCOPE
50 OUTPUT
PULSE
GENERATOR
IR(REC) = 3.0 mA
IR
VR
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at IR(REC) = 3.0 mA)
INPUT SIGNAL
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
10 150°C
100
IR , REVERSE CURRENT (μA)
125°C
85°C
10
55°C
25°C
1.0
-55°C
125°C
1.0
85°C
0.1
55°C
0.01
25°C
-40°C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VF, FORWARD VOLTAGE (V)
0.8
0.9
0.001
20
1.0
50
80
170
200
110
140
VR, REVERSE VOLTAGE (V)
Figure 2. VF vs. IF
Figure 3. IR vs. VR
1.6
Cap
CD, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
150°C
1.4
1.2
1.0
0.8
0.6
0.4
0
1
2
3
4
5
VR, REVERSE VOLTAGE (V)
Figure 4. Capacitance
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3
6
7
8
230
260
BAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G
ORDERING INFORMATION
Package
Shipping†
BAS19LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
BAS19LT3G
SOT−23
(Pb−Free)
10000 / Tape & Reel
BAS20LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
BAS21LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
BAS21LT3G
SOT−23
(Pb−Free)
10000 / Tape & Reel
BAS21DW5T1G
SC−88A
(Pb−Free)
3000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
BAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
DIM
A
A1
b
c
D
E
e
L
L1
HE
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
BAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G
PACKAGE DIMENSIONS
SC−88A, SOT−353, SC−70
CASE 419A−02
ISSUE J
A
G
5
4
−B−
S
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
DIM
A
B
C
D
G
H
J
K
N
S
3
D 5 PL
0.2 (0.008)
B
M
M
N
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
--0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
--0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
J
C
K
H
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BAS19LT1/D
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