DSK BYT52D Fast recovery rectifier Datasheet

Diode Semiconductor Korea BYT52A(Z)---BYT52M(Z)
VOLT AGE RANGE: 50 --- 1000 V
CURRENT: 1.4 A
FAST RECOVERY RECT IFIERS
FEATURES
Low cos t
Diffus ed junction
Low leakage
DO - 15
Low forward voltage drop
High current capability
Eas ily cleaned with Freon, Alcohol,Is opropanol and
s im ilar s olvents
MECHANICAL DATA
Cas e:JEDEC DO--15,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces ,0.39 gram s
Mounting pos ition: Any
Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20%.
BYT
52A
BYT
52B
BYT
52D
BYT
52G
BYT
52J
BYT
52K
BYT
52M
UNITS
1000
V
Maximum recurrent peak reverse voltage
VRR M
50
100
200
400
600
800
Maximum RMS voltage
V R MS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
10
200
400
600
800
1000
V
Maximum average f orw ard rectif ied current
9.5mm lead length,
@TA =75
IF(AV)
1.4
A
IFSM
50.0
A
VF
1.3
V
Peak f orw ard surge current
10ms single half -sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous f orw ard voltage
(
@ 1.0A
Maximum reverse current
at rated DC blocking voltage
@TA =25
@TA =100
IR
5.0
Maximum reverse recovery time (Note1)
t rr
100.0
200
Typical junction capacitance
(Note2)
CJ
18
Typical thermal resistance
(Note3)
RqJA
45
TJ
-55 ---- + 150
TSTG
-55 ---- + 150
Operating junction temperature range
Storage temperature range
A
ns
pF
/W
N OTE:1. Meas ured with I F =0.5A, I R=1A, I rr =0.25A.
2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V D C .
3. Therm al resistance f rom junction to am bient.
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Diode Semiconductor Korea
BYT52A(Z)---BYT52M(Z)
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
t rr
10
N.1.
50
N.1.
+0.5A
D.U.T.
( - )
0
PULSE
GENERATOR
(NOTE2)
(+)
50VDC
(APPROX)
(-)
OSCILLOSCOPE
(NOTE 1)
1
N.1.
-0.25A
( + )
-1.0A
NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1M .22pF
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O
FIG.3 --PEAK FORWARD SURGE CURRENT
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
1.5
1.0
0.5
0.1
0.05
0.001
0
20
40
60 80
100
120
180
PEAK FORWARD SURGE CURRENT
AMPERES
AVERAGE FORWARD CURRENT
AMPERES
FIG.2 --FORWARD DERATING CURVE
2.0
90
70
50
T J=125
8.3ms Single Half
Sine-Wave
30
10
0
1
10
AMBIENT TEMPERATURE,
100
NUMBER OF CYCLES AT 60 Hz
FIG.5--TYPICAL JUNCTION CAPACITANCE
FIG.4--TYPICAL FORWARD CHARACTERISTIC
100
JUNCTION CAPACITANCE,pF
INSTANTANEOUS FORWARD CURRENT
AMPERES
1cm
SET TIMEBASEFOR 50/100 ns /cm
10
TJ =25
Pulse Width=300 µS
4
2
1.0
0 .4
0 .2
0 .1
0 .0 6
0.0 4
0 .0 2
100
60
40
20
10
4
TJ=25
f=1MHz
2
1
.1
0 .0 1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
.2
.4
1.0
2
4
10
20
40
100
2.0
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
REVERSE VOLTAGE,VOLTS
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