Diode Semiconductor Korea BYT52A(Z)---BYT52M(Z) VOLT AGE RANGE: 50 --- 1000 V CURRENT: 1.4 A FAST RECOVERY RECT IFIERS FEATURES Low cos t Diffus ed junction Low leakage DO - 15 Low forward voltage drop High current capability Eas ily cleaned with Freon, Alcohol,Is opropanol and s im ilar s olvents MECHANICAL DATA Cas e:JEDEC DO--15,m olded plas tic Term inals : Axial lead ,s olderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces ,0.39 gram s Mounting pos ition: Any Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20%. BYT 52A BYT 52B BYT 52D BYT 52G BYT 52J BYT 52K BYT 52M UNITS 1000 V Maximum recurrent peak reverse voltage VRR M 50 100 200 400 600 800 Maximum RMS voltage V R MS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 10 200 400 600 800 1000 V Maximum average f orw ard rectif ied current 9.5mm lead length, @TA =75 IF(AV) 1.4 A IFSM 50.0 A VF 1.3 V Peak f orw ard surge current 10ms single half -sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous f orw ard voltage ( @ 1.0A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =100 IR 5.0 Maximum reverse recovery time (Note1) t rr 100.0 200 Typical junction capacitance (Note2) CJ 18 Typical thermal resistance (Note3) RqJA 45 TJ -55 ---- + 150 TSTG -55 ---- + 150 Operating junction temperature range Storage temperature range A ns pF /W N OTE:1. Meas ured with I F =0.5A, I R=1A, I rr =0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V D C . 3. Therm al resistance f rom junction to am bient. www.diode.kr Diode Semiconductor Korea BYT52A(Z)---BYT52M(Z) FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM t rr 10 N.1. 50 N.1. +0.5A D.U.T. ( - ) 0 PULSE GENERATOR (NOTE2) (+) 50VDC (APPROX) (-) OSCILLOSCOPE (NOTE 1) 1 N.1. -0.25A ( + ) -1.0A NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1M .22pF 2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O FIG.3 --PEAK FORWARD SURGE CURRENT Single Phase Half Wave 60HZ Resistive or Inductive Load 1.5 1.0 0.5 0.1 0.05 0.001 0 20 40 60 80 100 120 180 PEAK FORWARD SURGE CURRENT AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.2 --FORWARD DERATING CURVE 2.0 90 70 50 T J=125 8.3ms Single Half Sine-Wave 30 10 0 1 10 AMBIENT TEMPERATURE, 100 NUMBER OF CYCLES AT 60 Hz FIG.5--TYPICAL JUNCTION CAPACITANCE FIG.4--TYPICAL FORWARD CHARACTERISTIC 100 JUNCTION CAPACITANCE,pF INSTANTANEOUS FORWARD CURRENT AMPERES 1cm SET TIMEBASEFOR 50/100 ns /cm 10 TJ =25 Pulse Width=300 µS 4 2 1.0 0 .4 0 .2 0 .1 0 .0 6 0.0 4 0 .0 2 100 60 40 20 10 4 TJ=25 f=1MHz 2 1 .1 0 .0 1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 .2 .4 1.0 2 4 10 20 40 100 2.0 INSTANTANEOUS FORWARD VOLTAGE,VOLTS REVERSE VOLTAGE,VOLTS www.diode.kr