IXYS IXFC12N80P Polarhv hiperfet power mosfet isoplus220 Datasheet

Advance Technical Information
PolarHVTM HiPerFET
Power MOSFET
ISOPLUS220TM
IXFC 12N80P
VDSS
ID25
RDS(on)
trr
(Electrically Isolated Back Surface)
= 800 V
=
7 A
≤ 0.93 mΩ
Ω
≤ 250 ns
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Symbol
Test Conditions
VDSS
VDGR
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
VGS
VGSM
Maximum Ratings
Continuous
Transient
800
800
V
V
± 30
± 40
V
V
ID25
IDM
TC = 25° C
TC = 25° C, pulse width limited by TJM
7
36
A
A
IAR
EAR
EAS
TC = 25° C
TC = 25° C
TC = 25° C
6
30
1.0
A
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 10 Ω
10
V/ns
PD
TC = 25° C
120
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
2500
°C
°C
V~
11..65/2.5..15
N/lb
2
g
TJ
TJM
Tstg
TL
TSOLD
VISOL
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
50/60 Hz, RMS, t = 1, leads-to-tab
FC
Mounting Force
Weight
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0 V, ID = 250 µA
800
VGS(th)
VDS = VGS, ID = 2.5 mA
3.0
IGSS
VGS = ±30 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT, (Note 1)
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
TJ = 125° C
V
5.5
V
±100
nA
25
750
µA
µA
0.93 mΩ
ISOPLUS220TM (IXFC)
E153432
G
D
S
G = Gate
S = Source
Isolated back surface
D = Drain
Features
z
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z
Low drain to tab capacitance(<35pF)
z
Low RDS (on) HDMOSTM process
z
Rugged polysilicon gate cell structure
z
Unclamped Inductive Switching (UIS)
rated
z
Fast intrinsic Rectifier
Applications
z
DC-DC converters
z
Battery chargers
z
Switched-mode and resonant-mode
power supplies
z
DC choppers
z
AC motor control
Advantages
z
Easy assembly: no screws, or isolation
foils required
z
Space savings
z
High power density
z
Low collector capacitance to ground
(low EMI)
DS99603E(07/06)
IXFC 12N80P
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 20 V; ID = IT, pulse test
12
Ciss
Coss
18
S
2800
pF
210
pF
19
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
td(on)
21
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
22
ns
td(off)
RG = 10 Ω (External)
62
ns
tf
22
ns
Qg(on)
51
nC
13
nC
19
nC
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = IT
Qgd
ISOPLUS220TM (IXFC) Outline
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
1.05 ° C/W
RthJC
RthCS
° C/W
0.21
Source-Drain Diode
Characteristic Values
(TJ = 25° C unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
12
A
ISM
Repetitive
36
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
trr
IRM
IF = 12 A, -di/dt = 100 A/µs
VR = 100 V, VGS = 0 V
250
QRM
7
ns
A
0.7
µC
Ref: IXYS CO 0177 R0
Note 1: Test Current IT = 6 A
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and
experience, and constitute a "considered reflection" of the anticipated objective result. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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