INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD70R950CE,IIPD70R950CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Very high commutation ruggedness ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 700 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 7.4 A IDM Drain Current-Single Pulsed 12 A PD Total Dissipation @TC=25℃ 68 W Tj Max. Operating Junction Temperature 150 ℃ -40~150 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 1.85 ℃/W 62 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD70R950CE,IIPD70R950CE ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=1mA 700 VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.15mA 2.5 RDS(on) Drain-Source On-Resistance IGSS TYP MAX UNIT V 3.5 V VGS=10V; ID=1.5A 0.95 Ω Gate-Source Leakage Current VGS=20V; VDS=0V 0.1 μA IDSS Drain-Source Leakage Current VDS=700V; VGS= 0V 1 μA VSD Diode forward voltage IF=2.2A, VGS = 0V isc website：www.iscsemi.cn 2 0.9 V isc & iscsemi is registered trademark