BFG10; BFG10/X NPN 2 GHz RF power transistor Rev. 05 — 22 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) [email protected] use [email protected] (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via [email protected]). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification NPN 2 GHz RF power transistor FEATURES BFG10; BFG10/X PINNING • High power gain PIN • High efficiency DESCRIPTION BFG10 (see Fig.1) • Small size discrete power amplifier 1 collector • 1.9 GHz operating area 2 base • Gold metallization ensures excellent reliability. 3 emitter 4 emitter handbook, 2 columns 4 1 1 collector • Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz. 2 emitter 3 base 4 emitter DESCRIPTION 2 Top view BFG10/X (see Fig.1) APPLICATIONS 3 MSB014 Fig.1 SOT143. MARKING NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package. TYPE NUMBER CODE BFG10 %MS BFG10/X %MT QUICK REFERENCE DATA RF performance at Tamb = 25 °C in a common-emitter test circuit (see Fig.7). MODE OF OPERATION Pulsed, class-AB, duty cycle: < 1 : 8 f (GHz) VCE (V) PL (mW) Gp (dB) ηc (%) 1.9 3.6 200 ≥5 ≥50 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 8 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 250 mA IC(AV) average collector current − 250 mA Ptot total power dissipation − 400 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C up to Ts = 60 °C; see Fig.2; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. Rev. 05 - 22 November 2007 2 of 11 NXP Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS thermal resistance from junction to soldering point Rth j-s VALUE UNIT 290 K/W up to Ts = 60 °C; note 1; Ptot = 400 mW Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. V(BR)CBO collector-base breakdown voltage open emitter; IC = 0.1 mA 20 MAX. − UNIT V V(BR)CEO collector-emitter breakdown voltage open base; IC = 5 mA 8 − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.1 mA 2.5 − V ICES collector leakage current VCE = 5 V; VBE = 0 − 100 µA hFE DC current gain IC = 50 mA; VCE = 5 V 25 − Cc collector capacitance IE = ie = 0; VCB = 3.6 V; f = 1 MHz − 3 pF Cre feedback capacitance IC = 0; VCE = 3.6 V; f = 1 MHz − 2 pF MLC818 500 handbook, halfpage MLC819 2.0 handbook, halfpage P tot (mW) Cc (pF) 400 1.5 300 1.0 200 0.5 100 0 0 0 50 100 150 o 200 0 2 Ts ( C) 4 6 8 10 V CB (V) IC = 0; f = 1 MHz. Fig.3 Fig.2 Power derating curve Rev. 05 - 22 November 2007 Collector capacitance as a function of collector-base voltage; typical values. 3 of 11 NXP Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X APPLICATION INFORMATION RF performance at Tamb = 25 °C in a common-emitter test circuit (see Fig.7). MODE OF OPERATION f (GHz) VCE (V) ICQ (mA) PL (mW) Pulsed, class-AB, duty cycle: < 1 : 8 1.9 3.6 1 200 Gp (dB) ηc (%) >5 >50 typ. 7 typ. 60 Ruggedness in class-AB operation The BFG10 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated output power under pulsed conditions up to a supply voltage of 7 V, f = 1.9 GHz and a duty cycle of 1 : 8. MLC820 10 handbook, halfpage Gp (dB) 8 ηc MLC821 100 ηc (%) 500 handbook, halfpage PL (mW) 80 400 60 300 4 40 200 2 20 100 Gp 6 0 0 100 200 300 0 400 500 P L (mW) Pulsed, class-AB operation. VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8. Circuit optimized for PL = 200 mW. Fig.4 0 0 50 100 PD (mW) 150 Pulsed, class-AB operation. VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8. Circuit optimized for PL = 200 mW. Power gain and efficiency as functions of load power; typical values. Fig.5 Rev. 05 - 22 November 2007 Load power as a function of drive power; typical values. 4 of 11 NXP Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X SPICE parameters for the BFG10 crystal SEQUENCE No. PARAMETER VALUE UNIT 1 IS 2.714 fA 2 BF 102.8 − 3 NF 0.998 − 4 VAF 28.12 V 5 IKF 6.009 A 6 ISE 403.2 pA 7 NE 2.937 − 8 BR 31.01 − 9 NR 0.999 − 10 VAR 2.889 V 11 IKR 0.284 A 12 ISC 1.487 fA 13 NC 1.100 − 14 RB 3.500 Ω 15 IRB 1.000 µA 16 RBM 3.500 Ω 17 RE 0.217 Ω 18 RC 0.196 Ω 19(1) XTB 0.000 − 20(1) EG 1.110 eV 21(1) XTI 3.000 − 22 CJE 5.125 pF 23 VJE 0.600 V 24 MJE 0.367 − 25 TF 12.07 ps C cb handbook, halfpage L1 LB B L2 B' C be C' E' C Cce LE MBC964 L3 E QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc); fc = scaling frequency = 100 MHz. Fig.6 Package equivalent circuit SOT143. List of components (see Fig.6) DESIGNATION VALUE UNIT Cbe 84 fF Ccb 17 fF Cce 191 fF L1 0.12 nH L2 0.21 nH 0.06 nH 26 XTF 99.40 − L3 27 VTF 7.220 V LB 0.95 nH 28 ITF 3.950 A LE 0.40 nH 29 PTF 0.000 deg 30 CJC 2.327 pF 31 VJC 0.668 V 32 MJC 0.398 − 33 XCJC 0.160 − 34(1) TR 0.000 ns 35(1) CJS 0.000 F 36(1) VJS 750.0 mV 37(1) MJS 0.000 − 38 FC 0.652 − Note 1. These parameters have not been extracted, the default values are shown. Rev. 05 - 22 November 2007 5 of 11 NXP Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X Test circuit information handbook, full pagewidth V bias R2 VS R1 T1 ,, ,, ,, ,, ,, ,,,, C12 ,,, , , ,,,, L10 C14, C15, C16 L9 L7 C11 C10 L8 50 Ω input L2 C1 C13 L6 DUT L1 C2, C3, C4, C5 L4 L3 L5 C6, C7, C8 50 Ω output C9 MLC822 Fig.7 Common-emitter test circuit for class-AB operation at 1.9 GHz. Rev. 05 - 22 November 2007 6 of 11 NXP Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X List of components used in test circuit (see Fig.7) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1, C9, C10, C11 multilayer ceramic chip capacitor; note 1 24 pF C2, C3, C4, C5, C6, C7 multilayer ceramic chip capacitor; note 1 0.86 pF C8 multilayer ceramic chip capacitor; note 1 1.1 pF C12, C13 electrolytic capacitor 470 µF; 10 V C14, C15, C16 multilayer ceramic chip capacitor; note 1 10 nF L1 stripline; note 2 length 28.5 mm width 0.93 mm L2 stripline; note 2 length 2.3 mm width 0.93 mm L3 stripline; note 2 length 3.1 mm width 0.93 mm L4 stripline; note 2 length 3.3 mm width 0.93 mm L5 stripline; note 2 length 16.3 mm width 0.93 mm L6 stripline; note 2 length 10 mm width 0.93 mm L7 stripline; note 2 length 4.4 mm width 0.4 mm L8 stripline; note 2 length 19.3 mm width 0.93 mm L9 stripline; note 2 length 19.7 mm width 0.4 mm L10 micro choke T1 BD228 R1 metal film resistor 20 Ω; 0.4 W 2322 157 10209 R2 metal film resistor 530 Ω; 0.4 W 2322 157 15301 2222 031 34471 Notes 1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 2. The striplines are on a 1⁄32 inch double copper-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 6). Rev. 05 - 22 November 2007 7 of 11 NXP Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X handbook, full pagewidth 60 Collector Base 70 V bias R2 T1 R1 L10 C12 L9 C15 C14 C11 C13 VS C16 L8 L7 C10 C3 C4 C5 L6 C6 C2 C1 L5 L1 Base L2 L3 L4 C7 C8 Collector C9 MLC823 Dimensions in mm. The components are situated on one side of the copper-clad PTFE microfibre-glass board, the other side is not etched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.8 Printed-circuit board and component lay-out for common-emitter test circuit in Fig.7. Rev. 05 - 22 November 2007 8 of 11 NXP Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X PACKAGE OUTLINE handbook, full pagewidth 0.75 0.60 3.0 2.8 0.150 0.090 B 1.9 4 3 0.1 max o 10 max 0.2 M A B A 1.4 1.2 2.5 max o 10 max 1 1.1 max o 30 max 0.88 2 0 0.1 0.48 0 0.1 0.1 M A B MBC845 1.7 TOP VIEW Dimensions in mm. Fig.9 SOT143. Rev. 05 - 22 November 2007 9 of 11 BFG10; BFG10/X NXP Semiconductors NPN 2 GHz RF power transistor Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] Rev. 05 - 22 November 2007 10 of 11 BFG10; BFG10/X NXP Semiconductors NPN 2 GHz RF power transistor Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BFG10X_N_5 20071122 Product data sheet - BFG10X_4 • Modifications: Marking table on page 2; changed code BFG10X_4 19950831 Product specification - BFG10X_3 BFG10X_3 19950307 - - BFG10X_2 BFG10X_2 - - - BFG10X_1 BFG10X_1 - - - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 22 November 2007 Document identifier: BFG10X_N_5