GT25Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q102 High Power Switching Applications Unit: mm · The 3rd Generation · Enhancement-Mode · High Speed: tf = 0.32 µs (max) · Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate-emitter voltage VGES ±20 V DC IC 25 1 ms ICP 50 PC 200 W Tj 150 °C Tstg -55~150 °C Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range A JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.) 1 2003-03-18 GT25Q102 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±20 V, VCE = 0 ¾ ¾ ±500 nA Collector cut-off current ICES VCE = 1200 V, VGE = 0 ¾ ¾ 1.0 mA VGE (OFF) IC = 2.5 mA, VCE = 5 V 4.0 ¾ 7.0 V Gate-emitter cut-off voltage Collector-emitter saturation voltage VCE (sat) Input capacitance Switching time Cies Rise time tr Turn-on time ton Fall time tf Turn-off time toff Thermal resistance IC = 25 A, VGE = 15 V ¾ 2.1 2.7 V VCE = 50 V, VGE = 0, f = 1 MHz ¾ 1360 ¾ pF Inductive Load ¾ 0.10 ¾ VCC = 600 V, IC = 25 A ¾ 0.30 ¾ VGG = ±15 V, RG = 43 W ¾ 0.16 0.32 ¾ 0.68 ¾ ¾ ¾ 0.625 (Note1) ¾ Rth (j-c) ms °C/W Note1: Switching time measurement circuit and input/output waveforms VGE GT25Q301 90% 10% 0 -VGE IC L RG IC VCC 90% VCE 0 VCE 10% 10% td (off) 90% 10% td (on) 10% tr tf toff ton Note2: Switching loss measurement waveforms VGE 90% 10% 0 IC 0 10% VCE Eoff Eon 2 2003-03-18 GT25Q102 IC – VCE VCE – VGE 50 20 Common emitter (V) Common emitter Tc = 25°C VCE 20 15 Collector-emitter voltage Collector current IC (A) 40 30 20 10 10 0 VGE = 9 V 0 1 2 3 Collector-emitter voltage 4 VCE Tc = -40°C 16 12 8 25 IC = 10 A 0 0 5 4 (V) 8 (V) (V) Common emitter Tc = 25°C VCE 16 Collector-emitter voltage VCE (V) 20 20 Common emitter Collector-emitter voltage 16 VCE – VGE VCE – VGE 12 8 50 IC = 10 A 4 0 4 8 25 12 Gate-emitter voltage VGE 16 Tc = 125°C 16 12 8 50 4 8 Common VCE = 5 V emitter Collector-emitter saturation voltage VCE (sat) (V) Common emitter (A) IC 30 25 0 0 Tc = 125°C 4 -40 8 12 Gate-emitter voltage VGE 16 20 (V) VCE (sat) – Tc 4 40 10 12 Gate-emitter voltage VGE (V) IC – VGE 20 25 IC = 10 A 4 0 0 20 50 Collector current 12 Gate-emitter voltage VGE 20 0 50 4 16 3 25 2 (V) IC = 10 A 1 0 -60 20 50 VGE = 15 V -20 20 60 Case temperature Tc 3 100 140 (°C) 2003-03-18 GT25Q102 Switching time ton, tr – RG Switching time ton, tr – IC 1 Common emitter VCC = 600 V VGG = ±15 V IC = 25 A : Tc = 25°C : Tc = 125°C 0.5 (ms) ton 0.1 Switching time 0.3 0.05 3 tr 5 10 ton 0.3 ton, tr (ms) 0.5 Switching time 1 ton, tr 3 30 50 Gate resistance RG 100 300 0.1 Common emitter VCC = 600 V VGG = ±15 V RG = 43 W : Tc = 25°C : Tc = 125°C 0.05 0.03 0.01 500 tr 0 5 (9) 20 0.3 tf toff, tf (ms) 0.5 0.1 0.05 Common emitter VCC = 600 V VGG = ±15 V RG = 43 W : Tc = 25°C : Tc = 125°C 0.03 0.1 30 50 Switching loss 300 0.01 500 Eon, Eoff – RG 15 Switching loss (mJ) Eon Eoff 3 1 10 10 20 IC 25 30 (A) Eon, Eoff – IC 10 Common emitter VCC = 600 V VGG = ±15 V IC = 25 A : Tc = 25°C : Tc = 125°C Note2 5 5 Collector current 5 0.5 3 0 (9) Switching loss (mJ) Eon, Eoff Switching loss 10 100 Eon, Eoff 10 Gate resistance RG 30 (A) toff toff tf 5 30 Switching time toff, tf – IC 0.3 0.05 3 IC 25 1 Common emitter VCC = 600 V VGG = ±15 V IC = 25 A : Tc = 25°C : Tc = 125°C Switching time (ms) toff, tf 0.5 Switching time 1 15 Collector current Switching time toff, tf – RG 3 10 30 50 Gate resistance RG 100 300 5 (9) Eoff 1 Common emitter VCC = 600 V VGG = ±15 V RG = 43 W : Tc = 25°C : Tc = 125°C Note2 0.5 0.3 0.1 500 Eon 3 0 5 10 15 Collector current 4 20 IC 25 30 (A) 2003-03-18 GT25Q102 VCE, VGE – QG (V) Cies 1000 300 Coes 100 Common emitter VGE = 0 f = 1 MHz Tc = 25°C 30 10 0.1 0.3 1 Cres 3 10 30 Collector-emitter voltage 100 VCE 300 800 VCE 3000 Collector-emitter voltage Capacitance C (pF) 10000 400 600 12 VCE = 200 V 400 4 40 80 Gate charge Safe operating area (A) 1 ms* Collector current 3 30 IC (A) IC Collector current (nC) 50 50 ms* 100 ms* DC operation 5 10 ms* *: Single nonrepetitive pulse Tc = 25°C Curves must be derated 0.3 linearly with increase in temperature. 0.1 1 3 10 10 5 3 1 0.5 Tj < = 125°C 0.3 VGE = ±15 V RG = 43 W 30 100 Collector-emitter voltage 10 QG 0 200 160 Reverse bias SOA IC max (pulsed)* 10 0.5 120 100 IC max 30 (continuous) 1 8 200 (V) 100 50 16 600 0 0 1000 20 Common emitter RL = 12 W Tc = 25°C (V) 1000 Gate-emitter voltage VGE C – VCE 300 VCE 1000 0.1 1 3000 (V) 3 10 30 100 Collector-emitter voltage 300 VCE 1000 3000 (V) Rth (t) – tw 2 Transient thermal impedance Rth (t) (°C/W) Tc = 25°C 10 10 10 10 10 10 1 0 -1 -2 -3 -4 10 -5 10 -4 10 -3 10 -2 Pulse width 10 -1 tw 10 0 10 1 10 2 (s) 5 2003-03-18 GT25Q102 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2003-03-18