HSM83 Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0172-0500Z (Previous: ADE-208-091D) Rev.5.00 Jan.13.2004 Features • High reverse voltage. (VR = 250V) • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HSM83 F7 MPAK Pin Arrangement 3 2 1 (Top View) Rev.5.00, Jan.13.2004, page 1 of 4 1. NC 2. Anode 3. Cathode HSM83 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Peak reverse voltage VRM 300 V Reverse voltage VR 250 V Peak forward current IFM 300 mA 1 Non-Repetitive peak forward surge current IFSM * 2 A Average rectified current IO 100 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 1. Value at duration of 10 ms. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage Reverse current VF — — 1.2 V IF = 100 mA IR1 — — 0.2 µA VR = 250 V IR2 — — 100 Capacitance C — 1.5 3.0 pF VR = 0 V, f = 1 MHz Reverse recovery time trr — — 100 ns IF = IR = 30 mA, Irr = 3 mA, RL = 100 Ω Rev.5.00, Jan.13.2004, page 2 of 4 VR = 300 V HSM83 Main Characteristics 10–2 10–5 10–4 Reverse current IR (A) Forward current IF (A) 10–3 10–5 –6 10 10–7 10–6 10–7 10–8 10–8 10–9 0 0.2 0.4 0.6 0.8 1.0 0 50 100 150 200 250 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage f = 1MHz 10 Capacitance C (pF) 10–9 1.0 0.1 0.1 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage Rev.5.00, Jan.13.2004, page 3 of 4 HSM83 Package Dimensions As of January, 2003 1.9 ± 0.2 2.8 + 0.2 – 0.6 + 0.2 1.1 – 0.1 0.3 2.8 +– 0.1 0 – 0.1 (0.3) (0.95) (0.95) + 0.10 0.16 – 0.06 (0.65) 1.5 ± 0.15 0.10 3–0.4 +– 0.05 (0.65) Unit: mm Package Code JEDEC JEITA Mass (reference value) Rev.5.00, Jan.13.2004, page 4 of 4 MPAK — Conforms 0.011 g Sales Strategic Planning Div. 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