NPN Silicon Planar Epitaxial Transistors 1. 0 BC846A, B BC847A, B, C BC848A, B, C 0. 95 2. 9 SOT-23 1. 9 2. 4 1. 3 0. 4 1. BASE 0. 95 2. EMITTER 3. COLLECTOR Unit: mm FEATURES Power dissipation P CM: 0.225W (Tamb=25℃) Note1 Collector current I CM: 0.1 A Collector-base voltage V CBO: BC846 80 V BC847 50 V BC848 30 V Operating and storage junction temperature range T J, Tstg: -55℃ to +150℃ Note1: Transistor mounted on an FR4 Printed-circuit board. ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage Test conditions VCBO Ic= 10µA, IE=0 VCEO Ic= 10mA, IB=0 VEBO Collector cut-off current ICBO ICEO DC current gain VCB= 50V, IE=0 IEBO VCE= 45V, IB=0 VEB= 5V, IC=0 BC846A,847A,848A BC846B,847B,848B 0.1 µA 0.1 µA 0.1 µA VCE= 30V, IB=0 BC848 Emitter cut-off current V VCE= 60V, IB=0 BC846 BC847 6 VCB= 30V, IE=0 BC848 Collector cut-off current IE= 10µA, IC=0 VCB= 70V, IE=0 BC846 BC847 V 45 30 BC848 Emitter-base breakdown voltage V 50 65 BC846 BC847 UNIT 30 BC848 Collector-emitter breakdown voltage MAX 80 BC846 BC847 MIN HFE(1) VCE= 5V, IC= 2mA BC847C/BC848C 110 220 200 450 420 800 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5 mA 0.5 V Base-emitter saturation voltage VBE(sat) IC= 100mA, IB= 5mA 1.1 V Transition frequency fT VCE= 5 V, IC= 10mA f=100MHz 100 DEVICE MARKING BC846A=1A; BC846B=1B; BC847A=1E;BC847B=1F;BC847C=1G; BC848A=1J; BC848B=1K ; BC848C=1L MHz