IGBT with Diode IXSN 80N60AU1 VCES IC25 VCE(sat) = 600 V = 160 A = 3V Short Circuit SOA Capability C G E Symbol Test Conditions VCES TJ = 25°C to 150°C E Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 160 A IC90 TC = 90°C 80 A ICM TC = 25°C, 1 ms 320 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH ICM = 160 @ 0.8 VCES A tSC (SCSOA) VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 W, non repetitive 10 ms PC TC = 25°C 500 W VISOL 50/60 Hz IISOL £ 1 mA 2500 3000 V~ V~ -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C Md Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight Symbol 30 Test Conditions IC = 3 mA, VGE = 0 V 600 VGE(th) IC = 8 mA, VCE = VGE 4 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC TJ = 25°C TJ = 125°C = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES E153432 V VCGR t = 1 min t=1s miniBLOC, SOT-227 B V 8 V 1 15 mA mA ±100 ns 3 V E G E C E = Emitter , C = Collector G = Gate, E = Emitter Either Emitter terminal can be used as Main or Kelvin Emitter Features l International standard package miniBLOC l Aluminium-nitride isolation - high power dissipation l Isolation voltage 3000 V~ l UL registered E 153432 l Low VCE(sat) - for minimum on-state conduction losses l Fast Recovery Epitaxial Diode - short trr and IRM l Low collector-to-case capacitance (< 60 pF) - reduced RFI l Low package inductance (< 10 nH) - easy to drive and to protect Applications l AC motor speed control l DC servo and robot drives l DC choppers l Uninterruptible power supplies (UPS) l Switch-mode and resonant-mode power supplies Advantages Space savings l Easy to mount with 2 screws l High power density l 94552E(7/00) 1-4 IXSN80N60AU1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = 60 A; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % C ies S 8500 pF 650 pF C res 120 pF Qg 335 nC 88 nC 158 nC Inductive load, TJ = 25°C 140 ns IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = 2.7 W 220 ns Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 46 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 300 600 ns 450 600 ns miniBLOC, SOT-227 B M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 10 mJ 140 ns 220 ns 8 mJ P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 520 ns R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 550 ns T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 13 mJ RthJC 0.25 K/W RthCK 0.05 Reverse Diode (FRED) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = 50 A, VGE = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % IRM t rr IF = 50 A, VGE = 0 V, -diF/dt = 480 A/ms VR = 360 V TJ = 125°C IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25°C RthJC © 2000 IXYS All rights reserved K/W 19 175 35 1.8 V 50 A ns ns 0.80 K/W IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXSN80N60AU1 Fig.1 Saturation Characteristics 160 400 13V VGE = 15V TJ = 25°C Fig.2 Output Characterstics VGE = 15V 320 120 11V Ic - Amperes IC - Amperes TJ=25OC 360 140 100 80 60 40 9V 280 13V 240 200 160 11V 120 80 20 9V 40 7V 7V 0 0 0 1 2 3 4 5 0 2 4 6 VCE - Volts 10 10 12 14 16 18 20 VCE - Volts Fig.3 Collector-Emitter Voltage vs. Gate-Emitter Voltage Fig.4 Temperature Dependence of Output Saturation Voltage 1.5 TJ = 25°C 9 IC = 160A VGE = 15V 1.4 VCE(sat) - Normalized 8 7 Vce - Volts 8 6 5 IC = 160A 4 IC = 80A 3 2 IC = 40A 1 9 10 1.2 1.1 IC = 80A 1.0 0.9 IC = 40A 0.8 0 8 1.3 11 12 13 14 0.7 -50 15 -25 0 VGE - Volts 25 50 75 100 125 150 TJ - Degrees C Fig.5 Input Admittance Fig.6 Temperature Dependence of Breakdown and Threshold Voltage 1.3 160 VCE = 10V BV / VGE(th) - Normalized 140 IC - Amperes 120 100 80 60 TJ = 25°C 40 TJ = 125°C TJ = - 40°C 20 0 4 5 6 7 8 9 VGE - Volts © 2000 IXYS All rights reserved 10 11 12 13 1.2 BVCES IC = 3mA 1.1 1.0 0.9 VGE(th) 0.8 0.7 -50 IC = 8mA -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXSN80N60AU1 Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current 1000 Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG 24 1000 20 TJ = 125°C RG = 10W 600 12 tfi 400 6 200 0 0 20 40 60 80 tfi - nanoseconds 18 Eoff IC = 80A 800 Eoff - millijoules tfi - nanoseconds 800 16 Eoff 600 12 400 8 tfi 200 0 100 120 140 160 Eoff - millijoules TJ = 125°C 4 0 0 10 20 IC - Amperes 30 40 0 50 RG - Ohms Fig.9 Gate Charge Characteristic Curve Fig.10 Turn-Off Safe Operating Area 1000 15 IC = 80A VCE = 480A 100 TJ = 125°C IC - Amperes VGE - Volts 12 9 6 RG = 22W 10 dV/dt < 6V/ns 1 0.1 3 0.01 0 0 100 200 300 400 500 0 Qg - nCoulombs 100 200 300 400 500 600 700 VCE - Volts Fig.11 Transient Thermal Impedance Thermal Response - K/W 1 Diode 0.1 IGBT Single Pulse 0.01 0.001 0.0001 0.001 0.01 0.1 1 Time - Seconds © 2000 IXYS All rights reserved 4-4