DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP65-01 Silicon PIN diode Preliminary specification 2001 Nov 01 Philips Semiconductors Preliminary specification Silicon PIN diode BAP65-01 PINNING FEATURES • High voltage, current controlled PIN DESCRIPTION • RF resistor for RF switches 1 cathode • Low diode capacitance 2 anode • Low diode forward resistance (low loss) • Very low series inductance. APPLICATIONS handbook, halfpage • RF attenuators and switches • Bandswitch for TV tuners ; 1 2 Top view • Series diode for mobile communication transmit/receive switch. MAM405 Marking code: K6. DESCRIPTION Fig.1 Simplified outline (SOD723A) and symbol. Planar PIN diode in a SOD723A ultra small SMD plastic package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 30 V IF continuous forward current − 100 mA Ptot total power dissipation − 315 mW Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C 2001 Nov 01 Ts ≤ 90 °C 2 Philips Semiconductors Preliminary specification Silicon PIN diode BAP65-01 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF forward voltage IF = 50 mA 0.9 1.1 V IR reverse leakage current VR = 20 V − 20 nA Cd diode capacitance VR = 0 V; f = 1 MHz 0.61 − pF VR = 1 V; f = 1 MHz 0.48 0.9 pF VR = 3 V; f = 1 MHz 0.43 0.8 pF VR = 20 V; f = 1 MHz 0.375 − pF rD |s21 |s21 |s21 |s21 |s21 diode forward resistance |2 |2 |2 |2 |2 isolation insertion loss insertion loss insertion loss insertion loss IF = 1 mA; f = 100 MHz 1.0 − Ω IF = 5 mA; f = 100 MHz; note 1 0.6 0.95 Ω IF = 10 mA; f = 100 MHz; note 1 0.5 0.9 Ω IF = 100 mA; f = 100 MHz 0.3 − Ω VR = 0; f = 900 MHz 9.4 − dB VR = 0; f = 1800 MHz 5.5 − dB VR = 0; f = 2450 MHz 4.1 − dB IF = 1 mA; f = 900 MHz 0.10 − dB IF = 1 mA; f = 1800 MHz 0.12 − dB IF = 1 mA; f = 2450 MHz 0.15 − dB IF = 5 mA; f = 900 MHz 0.08 − dB IF = 5 mA; f = 1800 MHz 0.10 − dB IF = 5 mA; f = 2450 MHz 0.12 − dB IF = 10 mA; f = 900 MHz 0.06 − dB IF = 10 mA; f = 1800 MHz 0.09 − dB IF = 10 mA; f = 2450 MHz 0.11 − dB IF = 100 mA; f = 900 MHz 0.05 − dB IF = 100 mA; f = 1800 MHz 0.08 − dB IF = 100 mA; f = 2450 MHz 0.10 − dB τL charge carrier life time when switched from IF = 10 mA to 0.17 IR = 6 mA; RL = 100 Ω; measured at IR = 3 mA − µs LS series inductance IF = 100 mA; f = 100 MHz − nH 0.6 Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s 2001 Nov 01 PARAMETER thermal resistance from junction to soldering point 3 VALUE UNIT 190 K/W Philips Semiconductors Preliminary specification Silicon PIN diode BAP65-01 GRAPHICAL DATA 10 rD (Ω) 700 Cd (pF) 600 500 400 1 300 200 100 0.1 0 0.1 1 10 100 IF (mA) 0 4 8 12 16 20 VR (V) f = 100 MHz; T j = 25 °C. f = 1 MHz; T j = 25 °C. Fig.2 Fig.3 Forward resistance as a function of forward current; typical values. 0 Diode capacitance as a function of reverse voltage; typical values. 0 2 |s21| (dB) (4) (5) (2) (3) 2 |s21| (dB) -0.1 -10 (1) -0.2 -20 -0.3 -30 -0.4 -0.5 -40 0 1 2 3 0 f (GHz) (1) I F = 0.5 mA. (4) I F = 10 mA. (2) I F = 1 mA. (5) I F = 100 mA. 1 2 3 f (GHz) (3) I F = 5 mA. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. T amb = 25 °C. Fig.4 Diode zero biased and inserted in series with a 50 Ω stripline circuit. T amb = 25 °C. Insertion loss (|s21|2) of the diode as a function of frequency; typical values. 2001 Nov 01 Fig.5 4 Isolation (|s21|2) of the diode as a function of frequency; typical values. Philips Semiconductors Preliminary specification Silicon PIN diode BAP65-01 PACKAGE OUTLINE SOD723A Fig.6 R DE UN 2001 Nov 01 NT ME OP L VE DE 5 Philips Semiconductors Preliminary specification Silicon PIN diode BAP65-01 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2001 Nov 01 6 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. © Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613512/02/pp7 Date of release: 2001 Nov 01 Document order number: 9397 750 08974