EC746N60J C o n v e r t e r 600V,5.5A N-Channel Power MOSFET Features ◆ 600V, 5.5A, RDS(ON)(Max.) = 2.0Ω @ VGS = 10V ◆ Low Crss ◆ Fast Switching ◆ 100 % Avalanche Tested Applications Charger STB Open Framed Power Supply Absolute Maximum Ratings (Tc = 25°C unless otherwise noted) Limit TO-220 TO-220F Unit Drain-Source Voltage a 600 V Gate-Source Voltage 30 5.5 V 3.3 A 22 A Symbol VDS VGS ID IDM Parameter Drain Current-Continuous, TC =25℃ Drain Current-Continuous, TC =100 ℃ Drain Current-Pulsed b EAS Maximum Power Dissipation @ TJ =25 ℃ Single Pulsed Avalanche Energy e TJ, TSTG Operating and Store Temperature Range PD 113 A 37 W 114 mJ -55 to 150 ℃ Thermal Characteristics Symbol R JC Parameter Thermal Resistance, Junction-Case Max. R JA Thermal Resistance, Junction-Ambient Max. E-CMOS Corp. (www.ecmos.com.tw) Page 1 of 5 Value 1.1 3.4 63 Unit ℃/W ℃/W 4J06N-Rev.F001 600V,5.5A N-Channel Power MOSFET Electrical Characteristics( TJ = 25°C unless otherwise noted) ■ Off Characteristics Symbol Test Condition Parameter BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA EC746N60J C o n v e r t Min. Typ. Max. Unit e 600 V r IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V - - 20 μ A IGSSF Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA IGSSR Reverse Gate Body Leakage Current VDS = 0V, VGS = -30V - - -100 nA VDS = VGS, ID = 250μA 2.0 2.93 4.0 1.6 2.0 ■ On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance gFS Forward Transconductance VGS = 10V, ID = 2.75A V Ω 2.5 10 S - 798 - pF - 114 - pF - 25 - pF - VDS = 10V, ID = 2.75A ■ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz ■ Switching Characteristics td(on) Turn-On Delay Time tr td(off) Turn-On Rise Time Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge E-CMOS Corp. (www.ecmos.com.tw) - 25 - ns VDD = 300V, ID = 5.5A - 8.1 - ns RG = 10Ω, VGS = 10V - 38 - ns - 7.8 - ns - 19 nC - 5.8 nC - 8 nC VDS = 300V, ID = 5.5A VGS = 10V Page 2 of 5 4J06N-Rev.F001 EC746N60J C o n v e 5.5 A r t 22 A e 0.93 1.5 Vr 600V,5.5A N-Channel Power MOSFET ■ Drain-Source Diode Characteristics IS Drain-Source Diode Forward Continuous Current VGS = 0V - ISM Miximum Pulsed Current VGS = 0V - VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 5.5A - trr Reverse Recovery time VGS = 0V, IS = 5.5A, di/dt = 100A/μs - 276 - ns Notes : a. TJ = +25 C to +150 C. b. Repetitive rating; pulse width limited by maximum junction temperature. c. ISD= 1.4A di/dt≦ 100 A/μs, VDD≦ BVDSS, TJ ≦ +150 C. d. Pulse width≦ 300 μs; duty cycle≦ 2%. e. L=10mH, VDD =50V, IAS =5A, RG =25Ω Starting TJ =25 ℃. Figure 1. Normalized Effective Transient Thermal Impedance With Pulse Duration E-CMOS Corp. (www.ecmos.com.tw) Page 3 of 5 4J06N-Rev.F001 600V,5.5A N-Channel Power MOSFET EC746N60J C o n v e r t e r Figure 3 Maximum Safe Operating Area Figure 2. Normalized On-Resistance Variation with Temperature Figure 4. Capacitance Characteristics Figure 5. Gate Charge Characteristics Figure 6. On-state Characteristics Figure 7. Body Diode Forward Voltage Variation with Source Current E-CMOS Corp. (www.ecmos.com.tw) Page 4 of 5 4J06N-Rev.F001 600V,5.5A N-Channel Power MOSFET Figure 8. Gate Threshold Variation With Temperature EC746N60J C o n v e r t e r Figure 9. Transfer Characteristics ORDERING INFORMATION Part Number Package EC746N60JAFR TO-220F-3L EC746N60JAR TO-220-3L E-CMOS Corp. (www.ecmos.com.tw) Marking 746N60J LLLLL YYWW Page 5 of 5 Marking Information 1. LLLLL：Lot No. 2. YY：Year code 3. WW：Week code 4J06N-Rev.F001