THYRISTOR MODULE AK55HB120/160 UL;E76102 （M） Power ThyristorModule AK55HB series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 1600V are available, and electrically isolated mounting base make your mechanical design easy. 93.5max 80 2-φ6.5 2 1 K2 G2 3 K1 G1 13 26max （Applications） AC/DC motor drives Heater controls Light dimmers Static switches 16.5 23 23 3-M5 Internal Configurations G2 K2 21 110TAB 30max Isolated mounting base ● IT（AV）55A, IT（RMS）122A, ITSM 1100A ● di/dt 150 A/μs ● dv/dt 500V/μs A2･K1 3 1 A1K2 K1 G1 2 Unit：A ■Maximum Ratings （Tj＝25℃ unless otherwise specified） Symbol Item VDRM Repetitive Peak Off-State Voltage Symbol IT（AV） Ratings AK55HB120 1200 Item Conditions Average On-State Current Single phase, half wave, 180°conduction, Tc：85℃ IT（RMS） R.M.S. On-State Current Tc：85℃ ITSM Surge On-State Current 1／cycle, 2 It Value for one cycle of surge current It 2 2 Unit AK55HB160 1600 50Hz/60Hz, peak value, non-reqetitive V Ratings Unit 55 A 122 A 1000/1100 5000 A A2S PGM Peak Gate Power Dissipation 10 W PG（AV） Average Gate Power Dissipation 3 W IFGM Peak Gate Current 3 A VFGM Peak Gate Voltage（Forwad） 10 V Peak Gate Voltage（Reverse） 5 V VRGM di/dt VISO Critical Rate of Rise of On-State Current IG＝100mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝0.1A/μs Isolation Breakdown Voltage （R.M.S.） A.C. 1 minute 2500 V Tj Operating Junction Temperature −40 to ＋125 ℃ Storage Temperature Tstg Mounting Torque 150 A/μs −40 to ＋125 ℃ Mounting（M6） Recommended Value 2.5-3.9（25-40） 4.7（48） Terminal（M5） 2.7（28） N･ｍ （㎏f･B） 170 g Ratings Unit Mass Recommended Value 1.5-2.5（15-25） Typical Value ■Electrical Characteristics Symbol Item Conditions IDRM Repetitive Peak Off-State Current, max. at VDRM, Single phase, half wave, Tj＝125℃ VTM Peak On-State Voltage max. On-State Current 165A, Tj＝125℃Inst. measurement IGT/VGT VGD Gate Trigger Current/Voltage, max. Non-Trigger Gate, Voltage. min. Tj＝25℃，IT＝1A，VD＝6V Turn On Time, max. IT＝55A，IG＝100mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝0.1A/μs Critical Rate of Rise of Off-State Voltage, min. Tj＝125℃，VD＝2／3VDRM，Exponential Holding Current, typ. Tj＝25℃ Lutching Current, typ. tgt dv/dt IH IL Rth（j-c） Thermal Impedance, max. SanRex Tj＝125℃，VD＝1／2VDRM 20 mA 1.50 V 100/2 0.25 mA/V V 10 μs 500 V/μs 50 mA Tj＝25℃ 100 mA Junction to case, per 1／2 Module 0.50 Junction to case, per 1 Module 0.25 wave. ℃/W ® 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] ;; ;; AK55HB120/160 Gate Characteristics Ga te ２ Po we （ r 3W ） １００ ５ 25℃ 125℃ ２ −30℃ ２ １０２ ５ ２ １０１ ５ Maximum Gate Voltage that will not trigger any unit（0.25V） ー１ １０ １０１ ２ ５ １０２ ２ １０３ ５ Tj＝125℃ ２ ２ ５ ０． ５ １． ０ Average On-State Current Vs Power Dissipation （Single phase half wave） Per one element Allowable Case Temperature（℃） １２０ １４０ D.C. Power Dissipation（W） ２． ５ ３． ０ Average On-State Current Vs Maximum Allowable Case Temperature（Single phase half wave） Per one element 2 θ＝120゜ θ＝90゜ θ＝60゜ ６０ θ＝30゜ 2 ４０ 。 360 ２０ : Conduction Angle １０ ２０ ３０ ４０ ５０ 。 360 １００ θ＝180゜ ８０ ０ ０ ６０ ７０ ８０ ６０ θ＝90゜ θ＝30゜ θ＝60゜ ４０ D.C. θ＝180゜ θ＝120゜ ２０ ９０ １００ ０ １０ ２０ ３０ ４０ ５０ ６０ ７０ ８０ ９０ １００ Average On-State Current（A） Transient Thermal Impedance θj-c（℃/W） Surge On-State Current Rating （Non-Repetitive） Transient Thermal Impedance ０． ６ Per one element Tj＝25℃ start １０００ : Conduction Angle ８０ Average On-State Current（A） Surge On-State Current（A） ２． ０ １２０ １００ ０． ５ １００ ２ ５ １０１ Junction to Case Per one element ０． ４ ８００ 60Hz ６００ ０． ３ 50Hz ０． ２ ４００ ０． １ ２００ ０ １ ２ ５ １０ ２０ ５０ １００ Total Power Dissipation（W） Output Current W１；Bidirectional connection W3 Conduction Angle 180° Id（RMS） ld(Ar.m.s) ４００ Rth:0.8C/W Rth:0.6C/W Rth:0.4C/W Rth:0.2C/W Rth:0.1C/W ３００ ２００ W1 １００ ０ ０ ５０ １００ １５０ Output Current（A） ９０ １００ １１０ １２０ １２５ ０ ２５ ５０ ７５ １００１２５ Ambient Temperature（℃） Allowable Case Temperature（℃） Time（cycles） ５００ １． ５ On-State Voltage（V） Gate Current（mA） ０ １０ー３ ２ ５ １０ー２ ２ Ｗ３；Three phase bidiretional connection ９０ ５ １０ー１ ２ Time t（sec） ５ １００ RMS On-State Current Vs Allowable Case Temperature Rth:0.8C/W Rth:0.6C/W Rth:0.4C/W Rth:0.2C/W Rth:0.1C/W １２０ １１０ θ＝30゜ １００ θ＝60゜ θ＝90゜ ９０ θ＝120゜ θ＝180゜ １００ ８０ １１０ Id（Ar.m.s.） ７０ ６０ １２０ １２５ １３０ ０ ２５ ５０ ７５ １００１２５ ５０ ０ ２０ ４０ ６０ ８０ １００１２０１４０ Ambient Temperature（℃） RMS On-State Current（A） Allowable Case Temperature（℃） Gate Voltage（V） ５ P Po eak we Ga （ t r 10 e W ） On-State Current（A） Peak Forward Gate Voltag（10V） Av er ag e １０１ On-State Voltage max ５ Peak Gate Current（3A） ２