Luguang BY448 Standard avalanche sinterglass diode Datasheet

BY448/BY458
Standard Avalanche Sinterglass Diode
Features
•
•
•
•
Glass passivated junction
Hermetically sealed package
e2
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
High voltage rectification diode
Efficiency diode in horizontal deflection circuits
949539
Mechanical Data
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 369 mg
Case: SOD-57 Sintered glass case
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Parts Table
Part
Type differentiation
Package
BY448
VR = 1500 V; IFAV = 2 A
SOD-57
BY458
VR = 1200 V; IFAV = 2 A
SOD-57
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Reverse voltage
Peak forward surge current
Test condition
see electrical characteristics
Part
Symbol
Value
Unit
BY448
VR = VRRM
1500
V
BY458
VR = VRRM
1200
V
IFSM
30
A
tp = 10 ms, half sinewave
Average forward current
Junction temperature
Storage temperature range
Non repetitive reverse
avalanche energy
I(BR)R = 0.4 A
IFAV
2
A
Tj
140
°C
Tstg
- 55 to + 175
°C
ER
10
mJ
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Junction ambient
Symbol
Value
Unit
l = 10 mm, TL = constant
Test condition
RthJA
45
K/W
on PC board with spacing
25 mm
RthJA
100
K/W
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BY448/BY458
Standard Avalanche Sinterglass Diode
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = 3 A
VF
1.6
V
Reverse current
VR = VRRM
IR
3
µA
VR = VRRM, Tj = 140 °C
IR
140
µA
Total reverse recovery time
IF = 1 A, - diF/dt = 0.05 A/µs
trr
20
µs
Reverse recovery time
IF = 0.5 A, IR = 1 A, iR = 0,25 A
trr
2
µs
RthJA Therm. Resist. Junction/Ambient (K/W)
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
120
l
2.5
I FA - Average Forward Current ( A )
l
100
80
TL= constant
60
40
20
0
0
5
10
15
20
25
2.0
1.5
1.0
0.5
RthJA = 100 K/W
PCB: d = 25 mm
0
30
l - Lead Length ( mm )
94 9101
V R = VRRM
half sinewave
R thJA = 45 K/W
l = 10 mm
Figure 1. Typ. Thermal Resistance vs. Lead Length
0
25
50
75
100
125
150
Tamb - Ambient Temperature ( ° C )
16418
Figure 3. Max. Average Forward Current vs. Ambient Temperature
1000
100
Tj = 150 ° C
1
Tj =25 °C
0.1
0.01
I R - Reverse Current ( µA )
I F - Forward Current ( A )
V R = VRRM
10
0.001
10
1
25
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
16417
100
V F - Forward V oltage ( V )
Figure 2. Forward Current vs. Forward Voltage
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16419
50
75
100
125
150
Tj - Junction T emperature ( ° C )
Figure 4. Reverse Current vs. Junction Temperature
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BY448/BY458
Standard Avalanche Sinterglass Diode
35
V R = VRRM
350
CD - Diode Capacitance ( pF )
PR - Reverse Power Dissipation ( mW )
400
300
PR -Limit
@100 % VR
250
200
150
PR -Limit
@80 % VR
100
50
25
20
15
10
5
0
25
16420
50
75
100
125
Tj - Junction Temperature ( °C )
0
0.1
150
1
10
Figure 6. Diode Capacitance vs. Reverse Voltage
Package Dimensions in mm (Inches)
Sintered Glass Case
SOD-57
3.6 (0.140)max.
94 9538
Cathode Identification
ISO Method E
0.82 (0.032) max.
26(1.014) min.
4.0 (0.156) max.
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100
V R - Reverse Voltage ( V )
16421
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
f= 1 MHz
30
26(1.014) min.
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