BY448/BY458 Standard Avalanche Sinterglass Diode Features • • • • Glass passivated junction Hermetically sealed package e2 Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications High voltage rectification diode Efficiency diode in horizontal deflection circuits 949539 Mechanical Data Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 369 mg Case: SOD-57 Sintered glass case Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Parts Table Part Type differentiation Package BY448 VR = 1500 V; IFAV = 2 A SOD-57 BY458 VR = 1200 V; IFAV = 2 A SOD-57 Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Peak forward surge current Test condition see electrical characteristics Part Symbol Value Unit BY448 VR = VRRM 1500 V BY458 VR = VRRM 1200 V IFSM 30 A tp = 10 ms, half sinewave Average forward current Junction temperature Storage temperature range Non repetitive reverse avalanche energy I(BR)R = 0.4 A IFAV 2 A Tj 140 °C Tstg - 55 to + 175 °C ER 10 mJ Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified Parameter Junction ambient Symbol Value Unit l = 10 mm, TL = constant Test condition RthJA 45 K/W on PC board with spacing 25 mm RthJA 100 K/W http://www.luguang.cn mail:[email protected] BY448/BY458 Standard Avalanche Sinterglass Diode Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 3 A VF 1.6 V Reverse current VR = VRRM IR 3 µA VR = VRRM, Tj = 140 °C IR 140 µA Total reverse recovery time IF = 1 A, - diF/dt = 0.05 A/µs trr 20 µs Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0,25 A trr 2 µs RthJA Therm. Resist. Junction/Ambient (K/W) Typical Characteristics (Tamb = 25 °C unless otherwise specified) 120 l 2.5 I FA - Average Forward Current ( A ) l 100 80 TL= constant 60 40 20 0 0 5 10 15 20 25 2.0 1.5 1.0 0.5 RthJA = 100 K/W PCB: d = 25 mm 0 30 l - Lead Length ( mm ) 94 9101 V R = VRRM half sinewave R thJA = 45 K/W l = 10 mm Figure 1. Typ. Thermal Resistance vs. Lead Length 0 25 50 75 100 125 150 Tamb - Ambient Temperature ( ° C ) 16418 Figure 3. Max. Average Forward Current vs. Ambient Temperature 1000 100 Tj = 150 ° C 1 Tj =25 °C 0.1 0.01 I R - Reverse Current ( µA ) I F - Forward Current ( A ) V R = VRRM 10 0.001 10 1 25 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 16417 100 V F - Forward V oltage ( V ) Figure 2. Forward Current vs. Forward Voltage http://www.luguang.cn 16419 50 75 100 125 150 Tj - Junction T emperature ( ° C ) Figure 4. Reverse Current vs. Junction Temperature mail:[email protected] BY448/BY458 Standard Avalanche Sinterglass Diode 35 V R = VRRM 350 CD - Diode Capacitance ( pF ) PR - Reverse Power Dissipation ( mW ) 400 300 PR -Limit @100 % VR 250 200 150 PR -Limit @80 % VR 100 50 25 20 15 10 5 0 25 16420 50 75 100 125 Tj - Junction Temperature ( °C ) 0 0.1 150 1 10 Figure 6. Diode Capacitance vs. Reverse Voltage Package Dimensions in mm (Inches) Sintered Glass Case SOD-57 3.6 (0.140)max. 94 9538 Cathode Identification ISO Method E 0.82 (0.032) max. 26(1.014) min. 4.0 (0.156) max. http://www.luguang.cn 100 V R - Reverse Voltage ( V ) 16421 Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature f= 1 MHz 30 26(1.014) min. mail:[email protected]