MBRJ2060CTG Product Preview SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency switching power supplies, free wheeling diodes and polarity protection diodes. Features • • • • • • • • • • Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Matched Dual Die Construction High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection Epoxy Meets UL 94 V−0 @ 0.125 in Electrically Isolated. No Isolation Hardware Required. This is a Pb−Free Device http://onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 60 VOLTS 1 2 3 TO−220 FULLPAK] CASE 221AH CT SUFFIX 1 Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • 2 3 MARKING DIAGRAM Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds AYWW B2060G AKA This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. A Y WW B2060 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Polarity Designator ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 November, 2012 − Rev. P0 1 Device Package Shipping MBRJ2060CTG TO−220 (Pb−Free) 50 Units/Rail Publication Order Number: MBRJ2060CT/D MBRJ2060CTG MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit VRRM VRWM VR 60 V IF(AV) 10 20 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz), TC = 133°C IFRM 20 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 0.5 A TJ, Tstg − 65 to +175 °C dv/dt 10000 V/ms Viso1 4500 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR), TC = 133°C Total Device Operating Junction and Storage Temperature Range (Note 1) Voltage Rate of Change (Rated VR) RMS Isolation Voltage (t = 0.3 second, R.H. ≤ 30%, TA = 25°C) (Note 2) Per Figure 4 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS (Per Leg) Rating Maximum Thermal Resistance Junction−to−Case Junction−to−Ambient Lead Temperature for Soldering Purposes: 1/8 in from Case for 5 Seconds Symbol Value Unit RqJC RqJA 4.0 105 °C/W TL 260 °C Symbol Max Unit ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 3) (iF = 10 Amp, TC = 25°C) (iF = 10 Amp, TC = 125°C) (iF = 20 Amp, TC = 25°C) (iF = 20 Amp, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 3) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR V 0.85 0.75 0.95 0.85 mA 0.15 150 50 TJ = 150°C 150°C 20 I R, REVERSE CURRENT (mA) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Proper strike and creepage distance must be provided. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0% 100°C 10 5.0 TJ = 25°C 3.0 1.0 10 TJ = 125°C TJ = 100°C 1.0 0.1 0.01 0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0.9 1.0 TJ = 25°C 0 Figure 1. Typical Forward Voltage Per Diode 20 40 60 80 100 VR, REVERSE VOLTAGE (VOLTS) 120 Figure 2. Typical Reverse Current Per Diode http://onsemi.com 2 MBRJ2060CTG R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 10 D = 0.5 1 0.1 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, PULSE TIME (sec) Figure 3. Typical Transient Thermal Response, Junction−to−Case TEST CONDITION FOR ISOLATION TEST* FULLY ISOLATED PACKAGE LEADS HEATSINK 0.110, MIN Figure 4. Mounting Position *Measurement made between leads and heatsink with all leads shorted together. MOUNTING INFORMATION CLIP HEATSINK Clip−Mounted Figure 5. Typical Mounting Technique http://onsemi.com 3 100 1000 MBRJ2060CTG PACKAGE DIMENSIONS TO−220 FULLPACK, 3−LEAD CASE 221AH ISSUE C A E B P E/2 0.14 Q D M B A M A H1 A1 C NOTE 3 1 2 3 L b2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. L1 3X 3X SEATING PLANE c b 0.25 M B A M C A2 e DIM A A1 A2 b b2 c D E e H1 L L1 P Q MILLIMETERS MIN MAX 4.30 4.70 2.50 2.90 2.50 2.70 0.54 0.84 1.10 1.40 0.49 0.79 14.70 15.30 9.70 10.30 2.54 BSC 6.70 7.10 12.70 14.73 --2.80 3.00 3.40 2.80 3.20 FULLPAK is a trademark of Semiconductor Components Industries, LLC. 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