NTJS4405N, NVJS4405N Small Signal MOSFET 25 V, 1.2 A, Single, N−Channel, SC−88 Features • • • • Advance Planar Technology for Fast Switching, Low RDS(on) Higher Efficiency Extending Battery Life AEC−Q101 Qualified and PPAP Capable − NVJS4405N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(on) Typ ID Max 249 mW @ 4.5 V 25 V 1.2 A 299 mW @ 2.7 V Applications • Boost and Buck Converter • Load Switch • Battery Protection N−Channel Drain 1 2 5 6 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage Rating VDSS 25 V Gate−to−Source Voltage VGS "8.0 V Drain Current t<5s TA = 25°C ID 1.2 A Continuous Drain Current (Note 1) Steady State TA = 25°C ID 1.0 A TA = 75°C Steady State PD 0.63 W Power Dissipation (Note 1) tv5s PD 0.89 W tp = 10 ms IDM 3.7 A TJ, TSTG −55 to +150 °C Source Current (Body Diode) (Note 1) IS 0.8 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C 25 V Operating Junction and Storage Temperature Source 4 MARKING DIAGRAM & PIN ASSIGNMENT 0.80 Power Dissipation (Note 1) Pulsed Drain Current Gate 3 ESD Rating − Machine Model D D S 6 1 SC−88/SOT−363 CASE 419B TS M G G 1 D TS M G D G = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) THERMAL RESISTANCE RATINGS Rating Symbol Max Unit Junction−to−Lead – Steady State (Note 1) RqJL 102 °C/W Junction−to−Ambient – Steady State (Note 1) RqJA 200 Junction−to−Ambient − t v 5 s (Note 1) RqJA 140 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). © Semiconductor Components Industries, LLC, 2011 October, 2011 − Rev. 6 1 ORDERING INFORMATION Device Package Shipping† NTJS4405NT1G SC−88 3000 / Tape & Reel (Pb−Free) NVJS4405NT1G SC−88 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTJS4405N/D NTJS4405N, NVJS4405N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 25 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 30 VGS = 0 V, VDS = 20 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = 8.0 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS 0.65 1.5 −2.0 V mV/°C VGS = 4.5 V, ID = 0.6 A 249 350 VGS = 2.7 V, ID = 0.2 A 299 400 VGS = 4.5 V, ID = 1.2 A 260 VDS = 5.0 V, ID = 0.5 A 0.5 mW S CHARGES AND CAPACITANCES CISS Input Capacitance Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge VGS = 0 V, f = 1.0 MHz, VDS = 10 V VGS = 4.5 V, VDS = 5.0 V, ID = 0.95 A 49 60 22.4 30 8.0 12 0.75 1.5 pF nC 0.10 0.30 0.50 QGD 0.20 0.40 td(ON) 6.0 12 tr 4.7 8.0 25 35 41 60 0.82 1.20 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(OFF) VGS = 4.5 V, VDS = 6.0 V, ID = 0.5 A, RG = 50 W tf ns DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 0.6 A TJ = 25°C 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 V NTJS4405N, NVJS4405N TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 4 3.5 4V 3.5 V VGS = 2.5 V 3 2.5 2 VGS = 2 V 1.5 1 0.5 TJ = 25°C 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 2 VGS = 3 V ID, DRAIN CURRENT (AMPS) 7V 6V 5.5 V 4.5 V 1.0 0.5 1.5 1 2.5 2 3 3.5 4 4.5 1.5 TJ = 125°C 1 0.5 25°C VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1.5 0.5 1 2 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0 VGS = 4.5 V 0.8 0.6 TJ = 125°C 0.4 TJ = 25°C 0.2 TJ = −55°C 0 1.0 0 2.0 3.0 4.0 ID, DRAIN CURRENT (AMPS) 5.0 0.4 TJ = 25°C VGS = 2.7 V VGS = 4.5 V 0.2 0.1 0.2 0.4 1 0.6 0.8 1.2 1.4 1.6 ID, DRAIN CURRENT (AMPS) 1.8 2 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10000 ID = 0.6 A VGS = 4.5 V VGS = 0 V 1000 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.6 2.5 0.3 Figure 3. On−Resistance vs. Drain Current and Temperature 1.8 TJ = −55°C VDS ≥ 5 V 0 5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) 5 4.5 1.4 1.2 1 TJ = 150°C 100 TJ = 125°C 10 0.8 0.6 −50 −25 0 25 50 75 100 125 150 1 0 5 10 15 20 25 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTJS4405N, NVJS4405N 150 VDS = 0 V C, CAPACITANCE (pF) 125 VGS = 0 V VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) TJ = 25°C Ciss 100 Crss 75 50 Ciss 25 Coss 0 10 Crss 5 VGS 0 VDS 10 5 15 20 25 5 3 QGS 1 0 ID = 0.95 A TJ = 25°C 0 0.2 0.4 0.6 Qg, TOTAL GATE CHARGE (nC) 1.2 IS, SOURCE CURRENT (AMPS) t, TIME (ns) 0.8 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge VDD = 6.0 V ID = 0.5 A VGS = 4.5 V 100 tf td(off) td(on) tr 1 1 QGD 2 Figure 7. Capacitance Variation 10 VDS = 5.0 V 4 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1000 QG(TOT) VGS = 4.5 V 10 100 1.1 VGS = 0 V 1 0.9 TJ = 25°C 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.2 0.3 RG, GATE RESISTANCE (OHMS) 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 1 NTJS4405N, NVJS4405N PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. D e A3 6 5 4 HE C −E− 1 2 DIM A A1 A3 b C D E e L HE 3 L b 6 PL 0.2 (0.008) E M A MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 M SOLDERING FOOTPRINT* 0.50 0.0197 A1 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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